F. K. LeGoues

10.4k total citations · 2 hit papers
127 papers, 8.6k citations indexed

About

F. K. LeGoues is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, F. K. LeGoues has authored 127 papers receiving a total of 8.6k indexed citations (citations by other indexed papers that have themselves been cited), including 79 papers in Atomic and Molecular Physics, and Optics, 79 papers in Electrical and Electronic Engineering and 47 papers in Materials Chemistry. Recurrent topics in F. K. LeGoues's work include Semiconductor materials and interfaces (47 papers), Semiconductor materials and devices (39 papers) and Semiconductor Quantum Structures and Devices (30 papers). F. K. LeGoues is often cited by papers focused on Semiconductor materials and interfaces (47 papers), Semiconductor materials and devices (39 papers) and Semiconductor Quantum Structures and Devices (30 papers). F. K. LeGoues collaborates with scholars based in United States, Finland and Netherlands. F. K. LeGoues's co-authors include J. Tersoff, B.S. Meyerson, R. M. Tromp, P. Chaudhari, D. Dimos, J. Mannhart, Subramanian S. Iyer, M. Copel, P. M. Mooney and J. F. Morar and has published in prestigious journals such as Science, Physical Review Letters and Physical review. B, Condensed matter.

In The Last Decade

F. K. LeGoues

126 papers receiving 8.2k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Orientation Dependence of Grain-Boundary Critical Currents inYBa2Cu3O7−δBicrystals

1988 1.1k citations F. K. LeGoues et al. Physical Review Letters profile →
Competing relaxation mechanisms in strained layers

1994 651 citations J. Tersoff, F. K. LeGoues Physical Review Letters profile →

Peers

Countries citing papers authored by F. K. LeGoues

Since Specialization

Citations

This map shows the geographic impact of F. K. LeGoues's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. K. LeGoues with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. K. LeGoues more than expected).

Fields of papers citing papers by F. K. LeGoues

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. K. LeGoues. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. K. LeGoues. The network helps show where F. K. LeGoues may publish in the future.

Co-authorship network of co-authors of F. K. LeGoues

This figure shows the co-authorship network connecting the top 25 collaborators of F. K. LeGoues. A scholar is included among the top collaborators of F. K. LeGoues based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. K. LeGoues. F. K. LeGoues is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Influence of misfit dislocations on the surface morphology of Si1−xGex films 1995 ·Applied Physics Letters ·M. A. Lutz, R. M. Feenstra, F. K. LeGoues, P. M. Mooney, J. O. Chu	143
2	Strain relaxation in ultrathin epitaxial films of β-FeSi2 on unstrained and strained Si(100) surfaces 1995 ·Thin Solid Films ·D. R. Peale, Richard Haight, F. K. LeGoues	12
3	Roughness analysis of Si/SiGe heterostructures 1995 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·R. M. Feenstra, M. A. Lutz, Frank Stern, K. Ismail, P. M. Mooney, F. K. LeGoues, C. Stanis, J. O. Chu, B.S. Meyerson	49
4	Competing relaxation mechanisms in strained layers breakdown → 1994 ·Physical Review Letters ·J. Tersoff, F. K. LeGoues	651
5	Thermally Induced Precipitation of Silicon Carbide in a Semiconductor Matrix-Application to Nanoparticle Fabrication 1994 ·Japanese Journal of Applied Physics ·Adrian R. Powell, F. K. LeGoues, Subramanian S. Iyer, (unknown)	2
6	High Resolution X-ray Diffraction Measurements of Strain Relaxed SiGe/Si Structures 1994 ·Advances in X-ray Analysis ·P. M. Mooney, Jean Jordan‐Sweet, G. B. Stephenson, F. K. LeGoues, J. O. Chu	2
7	Strain Relief in Thin Films: Can we Control it? 1992 ·Materials science forum ·F. K. LeGoues	3
8	Raman spectroscopy of long-range order in epitaxialSi0.5Ge0.5alloys 1992 ·Physical review. B, Condensed matter ·J. C. Tsang, V. P. Kesan, J. L. Freeouf, F. K. LeGoues, Shankar S. Iyer	10
9	Growth mode and dislocation distribution in the ZnSe/GaAs (100) system 1992 ·Applied Physics Letters ·Supratik Guha, H. Munekata, F. K. LeGoues, L.L. Chang	50
10	The Synthesis and Stability of Si_1−yQ_y Alloys and Strained Layer Superlattices 1991 ·MRS Proceedings ·Subramanian S. Iyer, K. Eberl, Mark S. Goorsky, F. K. LeGoues, F. Cardone, B. A. Ek	9
11	Hydrogen segregation and trapping in the Al/Si(111) interface 1991 ·Physical review. B, Condensed matter ·Joyce C. Liu, A. D. Marwick, F. K. LeGoues	19
12	Surface-stress-induced order in SiGe alloy films 1990 ·Physical Review Letters ·F. K. LeGoues, V. P. Kesan, Subramanian S. Iyer, J. Tersoff, R. M. Tromp	135
13	Spectroscopic ellipsometry ofE1-like transitions in nanometer-thickness Ge layers 1990 ·Physical Review Letters ·J. L. Freeouf, J. C. Tsang, F. K. LeGoues, Subramanian S. Iyer	26
14	Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation 1989 ·Applied Physics Letters ·F. K. LeGoues, R. Rosenberg, B.S. Meyerson	131
15	Structural Characterization of the Si(111)-CaF2Interface by High-Resolution Transmission Electron Microscopy 1988 ·Physical Review Letters ·R. M. Tromp, F. K. LeGoues, William Krakow, (unknown)	14
16	Radiation Damage in Thin Films of High T_c Superconductors 1987 ·MRS Proceedings ·G. J. Clark, F. K. LeGoues, A. D. Marwick, R. B. Laibowitz, R. H. Koch	2
17	The Mechanisms of Relaxation in Strained Layer GeSi/Si Superlattices: Diffusion Vs. Dislocation Formation 1987 ·MRS Proceedings ·F. K. LeGoues, Subramanian S. Iyer, K. N. Tu, S.L. Delage	6
18	Dopant Diffusion in TiSi₂ 1986 ·MRS Proceedings ·F. M. d’Heurle, A. E. Michel, F. K. LeGoues, G. Scilla, J. T. Wetzel, P. Gaś	3
19	NiSi mixing: A new model for low temperature silicide formation 1985 ·Surface Science ·E. J. van Loenen, J. F. van der Veen, F. K. LeGoues	55
20	Influence of crystallography upon critical nucleus shapes and kinetics of homogeneous f.c.c.-f.c.c. nucleation—V. The origin of GP zones in AlAg and AlCu alloys 1984 ·Acta Metallurgica ·F. K. LeGoues, Richard N. Wright, (unknown), H.I. Aaronson	15

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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