P. Agnello

1.6k citations

50 papers · 498 indexed · h-index 14

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 30
- Advancements in Semiconductor Devices and Circuit Design 15
- Integrated Circuits and Semiconductor Failure Analysis 13
- Silicon and Solar Cell Technologies 12
- Thin-Film Transistor Technologies 8
- Advancements in Photolithography Techniques 6
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 6
Surfaces, Coatings and Films
Media Technology
Materials Chemistry
- Silicon Nanostructures and Photoluminescence 12

Co-authors: T. O. Sedgwick S. K. Ghandhi L. A. Clevenger F. White R. Mann E.F. Crabbé H.‐S. Philip Wong T. S. Kuan
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Surfaces, Coatings and Films
Journals: Journal of The Electrochemical Society (7 papers)Applied Physics Letters (5 papers)IBM Journal of Research and Development (5 papers)
Partner nations: United States Canada

In The Last Decade

P. Agnello

46 papers receiving 452 citations

Peers

Countries citing papers authored by P. Agnello

Since Specialization

Citations

This map shows the geographic impact of P. Agnello's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Agnello with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Agnello more than expected).

Fields of papers citing papers by P. Agnello

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Agnello. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Agnello. The network helps show where P. Agnello may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P. Agnello, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Agnello Line = papers co-authored together P. Agnello links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Performance-optimized gate-first 22-nm SOI technology with embedded DRAM IBM Journal of Research and Development ·G. Freeman,L. Verhoeven,Noemi M. Fernandez,J. L. S. Cardoso,Sajia Islam,З. Зокиров,I Loadoa,Anne Van Dusen,Tosihide H. YOSIDA,雄二熊谷,Karen Nummy,P. Parries,Taeko Nagareda,X. X. Chen,P. Agnello,R. Malik	2015	3
2	45-nm silicon-on-insulator CMOS technology integrating embedded DRAM for high-performance server and ASIC applications IBM Journal of Research and Development ·Subramanian S. Iyer,G. Freeman,Quentin Suzanne,A. Chou,Dan Corliss,Sedegh Taghiloo,N. Lustig,V. McGahay,Tosihide H. YOSIDA,雄二熊谷,Karen Nummy,P. Parries,S. Sankaran,C. Sheraw,Pushkara R. Varanasi,Taeko Nagareda,M. Weybright,X. Yu,E.F. Crabbé,P. Agnello	2011	13
3	CMOS Fabricated by Hybrid-Orientation Technology (HOT) Bin Yang,Min Yang,David Fried,C. Sheraw,A.M. Waite,Karen Nummy,Remziye Koç,Evânia Moreira de Almeida Melo,H. Yin,Salomon Gonzlez-Blanco Garrido,Tosihide H. YOSIDA,X. Chen,Mukesh Khare,S. Luning,P. Agnello	2007	1
4	Phase edge lithography for sub 0.1 μm electrical channel length in a 200 mm full CMOS process P. Agnello,Thomas H. Newman,E.F. Crabbé,S. Subbanna,E. Ganin,Lars W. Liebmann,J.H. Comfort,D.A. Sunderland	2002	2
5	Process requirements for continued scaling of CMOS—the need and prospects for atomic-level manipulation IBM Journal of Research and Development ·P. Agnello	2002	22
6	Characterization of devices fabricated in films grown at low temperature by atmospheric pressure CVD T. O. Sedgwick,V. P. Kesan,P. Agnello,Detlev Grützmacher,D. Nguyen-Ngoc,Subramanian S. Iyer,Nour Alkabbani,A. Ferro	2002	0
7	Thickness measurement of ultra-thin gate dielectrics under inversion condition Weihang Zhu,P. Chardenet,Prima Weight Loss,Ahmed Mazrouaa,K.A. Furunes,P. Agnello,邢丹敏,T.P. Ma	2002	4
8	<title>X-ray exposure in the manufacture of sub-150-nm gate lines</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·János Matuz,P. Agnello,E.F. Crabbé,Chih,James Oberschmidt,Z Weng,Zazueta	1996	2
9	Anomalous short-channel effects in 0.1 μm MOSFETs Daniela Salgado C.,Wang Zhao-yua,Prima Weight Loss,P. Agnello,Jie Sun	1996	4
10	Identification of gate electrode discontinuities in submicron CMOS technologies, and effect on circuit performance IEEE Transactions on Electron Devices ·K.A. Jenkins,Joachim N. Burghartz,P. Agnello	1996	9
11	Fabrication of high performance 512Kb SRAMs in 0.25 μm CMOS technology using x-ray lithography Microelectronic Engineering ·R. Viswanathan,David E. Seeger,A. A. Bright,T. Bucelot,Andrew Pomerene,Karen Petrillo,Patricia G. Blauner,P. Agnello,J. M. Warlaumont,Tatiana Lobastova,D. Patel	1994	1
12	Fabrication of high performance 512K static-random access memories in 0.25 μm complementary metal–oxide semiconductor technology using x-ray lithography Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Ramya Viswanathan,David E. Seeger,A. A. Bright,T. Bucelot,Andrew Pomerene,Karen Petrillo,Patricia G. Blauner,P. Agnello,J. M. Warlaumont,Tatiana Lobastova,D. Patel	1993	20
13	Improved control of momentary rapid thermal annnealing for silicidation Journal of Electronic Materials ·P. Agnello,Sanaty Mohamed	1993	9
14	Effects of Trace Surface Oxidation in Low Temperature Epitaxy Grown from Dichlorosilane Journal of The Electrochemical Society ·T. O. Sedgwick,P. Agnello,Detlev Grützmacher	1993	5
15	Use of electron-beam charging for in-process inspection of silicide complementary metal-oxide-semiconductor gate electrode isolation Applied Physics Letters ·K.A. Jenkins,P. Agnello,A. A. Bright	1992	2
16	Inhibition of Silicon Oxidation during Low Temperature Epitaxial Growth Journal of The Electrochemical Society ·P. Agnello,T. O. Sedgwick	1992	6
17	Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures Applied Physics Letters ·P. Agnello,T. O. Sedgwick,Mark S. Goorsky,J. A. Ott,T. S. Kuan,G. Scilla	1991	11
18	Growth of Facet‐Free Selective Silicon Epitaxy at Low Temperature and Atmospheric Pressure Journal of The Electrochemical Society ·T. O. Sedgwick,P. Agnello,M. Berkenblit,T. S. Kuan	1991	18
19	The composition dependence of GaInAs grown by organometallic epitaxy Journal of Crystal Growth ·P. Agnello,S. K. Ghandhi	1989	6
20	A Mass Spectrometric Study of the Reaction of Triethylindium with Arsine Gas Journal of The Electrochemical Society ·P. Agnello,S. K. Ghandhi	1988	10

About P. Agnello

P. Agnello is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films and Media Technology, having authored 50 papers that have together received 498 indexed citations. Recurring topics across this work include Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers), Silicon and Solar Cell Technologies (12 papers), Silicon Nanostructures and Photoluminescence (12 papers), Thin-Film Transistor Technologies (8 papers), Advancements in Photolithography Techniques (6 papers) and Semiconductor materials and interfaces (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (425 citations), Atomic and Molecular Physics, and Optics (176 citations), Surfaces, Coatings and Films (18 citations), Media Technology (19 citations) and Materials Chemistry (93 citations). P. Agnello has collaborated with scholars based in United States and Canada. Frequent co-authors include T. O. Sedgwick, S. K. Ghandhi, L. A. Clevenger, F. White, R. Mann, E.F. Crabbé, H.‐S. Philip Wong, T. S. Kuan, J. Cotte and K.A. Jenkins. Their work appears in journals such as Journal of The Electrochemical Society, Applied Physics Letters, IBM Journal of Research and Development, Journal of Crystal Growth and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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