P. Agnello

1.6k total citations
50 papers, 498 citations indexed

About

P. Agnello is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, P. Agnello has authored 50 papers receiving a total of 498 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in P. Agnello's work include Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). P. Agnello is often cited by papers focused on Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). P. Agnello collaborates with scholars based in United States and Canada. P. Agnello's co-authors include T. O. Sedgwick, S. K. Ghandhi, L. A. Clevenger, F. White, R. Mann, E.F. Crabbé, H.‐S. Philip Wong, T. S. Kuan, J. Cotte and K.A. Jenkins and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

P. Agnello

46 papers receiving 452 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Agnello United States 14 425 176 93 76 42 50 498
Keith G. Lyon United States 7 205 0.5× 117 0.7× 123 1.3× 59 0.8× 36 0.9× 14 387
K. Moriwaki Japan 16 514 1.2× 106 0.6× 42 0.5× 34 0.4× 93 2.2× 39 669
G. E. Crook United States 11 271 0.6× 234 1.3× 107 1.2× 52 0.7× 17 0.4× 28 441
M.S. Leong Singapore 11 327 0.8× 157 0.9× 51 0.5× 47 0.6× 38 0.9× 49 393
T. Werner Germany 12 273 0.6× 154 0.9× 57 0.6× 80 1.1× 36 0.9× 44 463
Achyut K. Dutta United States 11 358 0.8× 110 0.6× 169 1.8× 129 1.7× 12 0.3× 80 483
Dave Kharas United States 11 283 0.7× 223 1.3× 70 0.8× 40 0.5× 35 0.8× 51 442
Chen S. Tsai United States 15 534 1.3× 338 1.9× 57 0.6× 203 2.7× 15 0.4× 61 696
Manuel Fendler France 10 199 0.5× 75 0.4× 28 0.3× 131 1.7× 23 0.5× 48 321
Roderick A. Hyde United States 7 127 0.3× 123 0.7× 30 0.3× 141 1.9× 29 0.7× 13 339

Countries citing papers authored by P. Agnello

Since Specialization
Citations

This map shows the geographic impact of P. Agnello's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Agnello with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Agnello more than expected).

Fields of papers citing papers by P. Agnello

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Agnello. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Agnello. The network helps show where P. Agnello may publish in the future.

Co-authorship network of co-authors of P. Agnello

This figure shows the co-authorship network connecting the top 25 collaborators of P. Agnello. A scholar is included among the top collaborators of P. Agnello based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Agnello. P. Agnello is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Freeman, G., Tosihide H. YOSIDA, Karen Nummy, et al.. (2015). Performance-optimized gate-first 22-nm SOI technology with embedded DRAM. IBM Journal of Research and Development. 59(1). 5:1–5:14. 3 indexed citations
2.
Iyer, Subramanian S., G. Freeman, A. Chou, et al.. (2011). 45-nm silicon-on-insulator CMOS technology integrating embedded DRAM for high-performance server and ASIC applications. IBM Journal of Research and Development. 55(3). 5:1–5:14. 13 indexed citations
3.
Yang, Bin, Min Yang, David Fried, et al.. (2007). CMOS Fabricated by Hybrid-Orientation Technology (HOT). 8–13. 1 indexed citations
4.
Agnello, P., Thomas H. Newman, E.F. Crabbé, et al.. (2002). Phase edge lithography for sub 0.1 μm electrical channel length in a 200 mm full CMOS process. 1927. 79–80. 2 indexed citations
5.
Agnello, P.. (2002). Process requirements for continued scaling of CMOS—the need and prospects for atomic-level manipulation. IBM Journal of Research and Development. 46(2.3). 317–338. 22 indexed citations
6.
Sedgwick, T. O., V. P. Kesan, P. Agnello, et al.. (2002). Characterization of devices fabricated in films grown at low temperature by atmospheric pressure CVD. 90 12. 451–454.
7.
Zhu, Weihang, et al.. (2002). Thickness measurement of ultra-thin gate dielectrics under inversion condition. 212–215. 4 indexed citations
8.
Agnello, P., et al.. (1996). <title>X-ray exposure in the manufacture of sub-150-nm gate lines</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2723. 237–248. 2 indexed citations
9.
Agnello, P., et al.. (1996). Anomalous short-channel effects in 0.1 μm MOSFETs. 571–574. 4 indexed citations
10.
Jenkins, K.A., Joachim N. Burghartz, & P. Agnello. (1996). Identification of gate electrode discontinuities in submicron CMOS technologies, and effect on circuit performance. IEEE Transactions on Electron Devices. 43(5). 759–765. 9 indexed citations
11.
Viswanathan, R., David E. Seeger, A. A. Bright, et al.. (1994). Fabrication of high performance 512Kb SRAMs in 0.25 μm CMOS technology using x-ray lithography. Microelectronic Engineering. 23(1-4). 247–252. 1 indexed citations
12.
Viswanathan, Ramya, David E. Seeger, A. A. Bright, et al.. (1993). Fabrication of high performance 512K static-random access memories in 0.25 μm complementary metal–oxide semiconductor technology using x-ray lithography. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(6). 2910–2919. 20 indexed citations
13.
Agnello, P., et al.. (1993). Improved control of momentary rapid thermal annnealing for silicidation. Journal of Electronic Materials. 22(6). 661–665. 9 indexed citations
14.
Sedgwick, T. O., P. Agnello, & Detlev Grützmacher. (1993). Effects of Trace Surface Oxidation in Low Temperature Epitaxy Grown from Dichlorosilane. Journal of The Electrochemical Society. 140(12). 3684–3688. 5 indexed citations
15.
Jenkins, K.A., P. Agnello, & A. A. Bright. (1992). Use of electron-beam charging for in-process inspection of silicide complementary metal-oxide-semiconductor gate electrode isolation. Applied Physics Letters. 61(3). 312–314. 2 indexed citations
16.
Agnello, P. & T. O. Sedgwick. (1992). Inhibition of Silicon Oxidation during Low Temperature Epitaxial Growth. Journal of The Electrochemical Society. 139(4). 1140–1146. 6 indexed citations
17.
Agnello, P., T. O. Sedgwick, Mark S. Goorsky, et al.. (1991). Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures. Applied Physics Letters. 59(12). 1479–1481. 11 indexed citations
18.
Sedgwick, T. O., P. Agnello, M. Berkenblit, & T. S. Kuan. (1991). Growth of Facet‐Free Selective Silicon Epitaxy at Low Temperature and Atmospheric Pressure. Journal of The Electrochemical Society. 138(10). 3042–3047. 18 indexed citations
19.
Agnello, P. & S. K. Ghandhi. (1989). The composition dependence of GaInAs grown by organometallic epitaxy. Journal of Crystal Growth. 97(3-4). 551–559. 6 indexed citations
20.
Agnello, P. & S. K. Ghandhi. (1988). A Mass Spectrometric Study of the Reaction of Triethylindium with Arsine Gas. Journal of The Electrochemical Society. 135(6). 1530–1534. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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