M. J. Tejwani

510 citations

24 papers · 344 indexed · h-index 10

Co-authors: O. E. Vilches Odair P. Ferreira C. W. Smith J. J. Rehr Swaminathan P. Iyer A. Powell Detlev Grützmacher T. O. Sedgwick
Topics: Semiconductor materials and interfaces (10 papers)Semiconductor materials and devices (8 papers)Quantum, superfluid, helium dynamics (5 papers)
Cited by: Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering
Journals: Physical Review Letters Physical review. B, Condensed matter Applied Physics Letters
Partner nations: United States

In The Last Decade

M. J. Tejwani

23 papers receiving 332 citations

Peers

Countries citing papers authored by M. J. Tejwani

Since Specialization

Citations

This map shows the geographic impact of M. J. Tejwani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. J. Tejwani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. J. Tejwani more than expected).

Fields of papers citing papers by M. J. Tejwani

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. J. Tejwani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. J. Tejwani. The network helps show where M. J. Tejwani may publish in the future.

Co-authorship network of co-authors of M. J. Tejwani

This figure shows the co-authorship network connecting the top 25 collaborators of M. J. Tejwani. A scholar is included among the top collaborators of M. J. Tejwani based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. J. Tejwani. M. J. Tejwani is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	High-performance CMOS fabricated on ultrathin BESOI with sub-10 nm ttv 2002 ·Shankar S. Iyer,M. J. Tejwani,(unknown),T. O. Sedgwick,G. Shahidi	0
2	High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation 2002 ·V. P. Kesan,(unknown),P.J. Restle,M. J. Tejwani,J. Aitken,Subramanian S. Iyer,J. A. Ott	8
3	Low temperature, low resistivity sub-half micron via/interconnect structure using reaction of Al-alloys and germane 2002 ·(unknown),M. J. Tejwani	2
4	Effect of matrix stopping power on sputter depth profile broadening 1994 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Paul Ronsheim,M. J. Tejwani	1
5	Comment on ‘‘Novel diffusion phenomenon of dopants in silicon at low temperatures’’ 1993 ·Physical Review Letters ·Paul Ronsheim,M. J. Tejwani	1
6	Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere 1993 ·Applied Physics Letters ·Detlev Grützmacher,T. O. Sedgwick,A. Powell,M. J. Tejwani,Swaminathan P. Iyer,J. Cotte,F. Cardone	48
7	Spectroscopic ellipsometric characterization of Si/Si1−xGex strained-layer supperlattices 1993 ·Applied Surface Science ·Heng Yao,John A. Woollam,(unknown),M. J. Tejwani,Samuel A. Alterovitz	12
8	Pt Reactions with Ge, SiGe, and Si/SiGe Superlattices 1992 ·MRS Proceedings ·(unknown),Chin‐An Chang,B.S. Meyerson,J. O. Chu,M. J. Tejwani	5
9	The Dependence of ETCH Pit Density on the Interfacial Oxygen Levels in Thin Silicon Layers Grown by Ultra High Vacuum Chemical Vapor Deposition 1992 ·MRS Proceedings ·M. J. Tejwani,Paul Ronsheim	3
10	Photoluminescence from pseudomorphically strained Si/Si 1-x Ge x multiple quantum wells grown on silicon 1992 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Stefan Zollner,R. T. Collins,Mark S. Goorsky,(unknown),M. J. Tejwani,J. O. Chu,B.S. Meyerson,F. K. LeGoues	2
11	Si/SiGe p-Channel MOSFETs 1991 ·S. Subbanna,V. P. Kesan,M. J. Tejwani,P.J. Restle,(unknown),Subramanian S. Iyer	14
12	Si/Si_1−xGe_x p-Channel Mosfets Fabricated Using a Gate Quality Dielectric Process 1991 ·MRS Proceedings ·V. P. Kesan,S. Subbanna,M. J. Tejwani,P.J. Restle,Subramanian S. Iyer	5
13	Characterization of Si/SiGe strained-layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique 1991 ·Applied Physics Letters ·(unknown),Mark S. Goorsky,B.S. Meyerson,F. K. LeGoues,M. J. Tejwani	23
14	Growth and diffusion of abrupt beryllium-doped profiles in gallium arsenide by organometallic vapor phase epitaxy 1988 ·Applied Physics Letters ·M. J. Tejwani,(unknown),B.M. Paine,J. M. Whelan	23
15	Monte Carlo simulation of recoil range distributions in multilayer GaAs targets 1987 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·M. J. Tejwani,(unknown)	2
16	Uniformity and crystalline quality of CoSi2/Si heterostructures grown by molecular beam epitaxy and reactive deposition epitaxy 1985 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·Y. C. Kao,M. J. Tejwani,Y. H. Xie,T. L. Lin,(unknown)	29
17	Characterization of Epitaxial CoSi₂ Films Grown on <111> Si 1984 ·MRS Proceedings ·Adel Hamdi,M‐A. Nicolet,Y. C. Kao,M. J. Tejwani,K. L. Wang	2
18	Fluctuations of a negative ion current in turbulent He-II 1984 ·Physics Letters A ·C. W. Smith,M. J. Tejwani	3
19	Possible Ising Transition in aHe4Monolayer Adsorbed on Kr-Plated Graphite 1980 ·Physical Review Letters ·M. J. Tejwani,Odair P. Ferreira,O. E. Vilches	96
20	Thermodynamics of two-dimensional helium films on textured substrates 1979 ·Physical review. B, Condensed matter ·J. J. Rehr,M. J. Tejwani	17

About M. J. Tejwani

M. J. Tejwani is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 24 papers that have together received 344 indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (10 papers), Semiconductor materials and devices (8 papers) and Quantum, superfluid, helium dynamics (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (224 citations), Condensed Matter Physics (75 citations) and Electrical and Electronic Engineering (160 citations). M. J. Tejwani has collaborated with scholars based in United States. Frequent co-authors include O. E. Vilches, Odair P. Ferreira, C. W. Smith, J. J. Rehr, Swaminathan P. Iyer, A. Powell, Detlev Grützmacher, T. O. Sedgwick, F. Cardone and V. P. Kesan. Their work appears in journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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