H. Gan
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- Copper Interconnects and Reliability 4
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- 3D IC and TSV technologies 10
- Electronic Packaging and Soldering Technologies 9
- Semiconductor Lasers and Optical Devices 4
- Electrical and Thermal Properties of Materials 2
- Advanced MEMS and NEMS Technologies 1
- General Materials Science top 10%
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- Semiconductor materials and interfaces 2
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- Polymer Science and PVC 1
- Co-authors
- K. N. TuCornelia TsangS. L. WrightL.P. BuchwalterR. PolastreR. HortonPaul AndryJohn Knickerbocker
- Cited by
- Electronic, Optical and Magnetic MaterialsElectrical and Electronic EngineeringGeneral Materials Science
- Journals
- Journal of Electronic Materials (1 paper)Beilstein Journal of Nanotechnology (1 paper)IEEE Journal of Solid-State Circuits (1 paper)
- Partner nations
- United StatesChinaItaly
In The Last Decade
H. Gan
15 papers receiving 589 citations
Peers
Comparison fields: 5 of 35
- Electronic, Optical and Magnetic Materials 199
- Electrical and Electronic Engineering 583
- General Materials Science 19
- Mechanical Engineering 120
- Hardware and Architecture 21
Countries citing papers authored by H. Gan
This map shows the geographic impact of H. Gan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Gan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Gan more than expected).
Fields of papers citing papers by H. Gan
This network shows the impact of papers produced by H. Gan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Gan. The network helps show where H. Gan may publish in the future.
Co-authorship network
The 25 scholars most cited alongside H. Gan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2021 | 2 | |
| 2 | 2021 | 3 | |
| 3 | 2012 | 1 | |
| 4 | 2012 | 4 | |
| 5 | 2010 | 1 | |
| 6 | 2006 | 73 | |
| 7 | 2006 | 151 | |
| 8 | 2006 | 36 | |
| 9 | 2006 | 20 | |
| 10 | 2005 | 220 | |
| 11 | 2005 | 7 | |
| 12 | 2004 | 4 | |
| 13 | 2003 | 4 | |
| 14 | 2003 | 26 | |
| 15 | 2002 | 56 |
About H. Gan
H. Gan is a scholar working on General Materials Science, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 15 papers that have together received 608 indexed citations. Recurring topics across this work include 3D IC and TSV technologies (10 papers), Electronic Packaging and Soldering Technologies (9 papers), Copper Interconnects and Reliability (4 papers), Semiconductor Lasers and Optical Devices (4 papers), Semiconductor materials and interfaces (2 papers), Electrical and Thermal Properties of Materials (2 papers), Polymer Science and PVC (1 paper) and Advanced MEMS and NEMS Technologies (1 paper). The work is most often cited by research in Electronic, Optical and Magnetic Materials (199 citations), Electrical and Electronic Engineering (583 citations) and General Materials Science (19 citations). H. Gan has collaborated with scholars based in United States, China and Italy. Frequent co-authors include K. N. Tu, Cornelia Tsang, S. L. Wright, L.P. Buchwalter, R. Polastre, R. Horton, Paul Andry, John Knickerbocker, E. Sprogis and C.S. Patel. Their work appears in journals such as Journal of Electronic Materials, Beilstein Journal of Nanotechnology, IEEE Journal of Solid-State Circuits, Journal of Applied Physics and JOM.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.