S.L. Delage

3.8k total citations
161 papers, 2.8k citations indexed

About

S.L. Delage is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S.L. Delage has authored 161 papers receiving a total of 2.8k indexed citations (citations by other indexed papers that have themselves been cited), including 140 papers in Electrical and Electronic Engineering, 100 papers in Condensed Matter Physics and 75 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S.L. Delage's work include GaN-based semiconductor devices and materials (100 papers), Semiconductor materials and devices (67 papers) and Radio Frequency Integrated Circuit Design (60 papers). S.L. Delage is often cited by papers focused on GaN-based semiconductor devices and materials (100 papers), Semiconductor materials and devices (67 papers) and Radio Frequency Integrated Circuit Design (60 papers). S.L. Delage collaborates with scholars based in France, Germany and Slovakia. S.L. Delage's co-authors include Subramanian S. Iyer, F. Arnaud d’Avitaya, E. Rosencher, E. Morvan, G.L. Patton, F. M. d’Heurle, Christophe Gaquière, Ο. Thomas, S. Tiwari and J.M.C. Stork and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

S.L. Delage

160 papers receiving 2.6k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
S.L. Delage 2.2k 1.3k 1.2k 557 428 161 2.8k
J. A. Edmond 1.8k 0.8× 982 0.8× 786 0.6× 876 1.6× 670 1.6× 60 2.6k
Maarten Leys 2.0k 0.9× 1.7k 1.3× 1.1k 0.9× 628 1.1× 808 1.9× 141 2.8k
Stefan Degroote 1.3k 0.6× 1.3k 1.0× 693 0.6× 524 0.9× 771 1.8× 89 2.0k
Shigetaka Tomiya 1.1k 0.5× 919 0.7× 820 0.7× 978 1.8× 396 0.9× 94 2.1k
A. Ougazzaden 2.0k 0.9× 1.1k 0.9× 1.3k 1.1× 998 1.8× 503 1.2× 230 3.2k
E. N. Mokhov 1.6k 0.7× 890 0.7× 494 0.4× 1.0k 1.8× 537 1.3× 214 2.4k
E. Kamińska 1.3k 0.6× 522 0.4× 730 0.6× 947 1.7× 488 1.1× 189 2.0k
R. Beresford 1.4k 0.7× 834 0.6× 932 0.8× 871 1.6× 420 1.0× 78 2.3k
Tomoyoshi Mishima 2.3k 1.0× 2.0k 1.5× 1.1k 0.8× 925 1.7× 1.1k 2.6× 182 3.2k
G. E. Bulman 1.0k 0.5× 822 0.6× 684 0.6× 610 1.1× 381 0.9× 59 1.7k

Countries citing papers authored by S.L. Delage

Since Specialization
Citations

This map shows the geographic impact of S.L. Delage's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.L. Delage with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.L. Delage more than expected).

Fields of papers citing papers by S.L. Delage

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.L. Delage. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.L. Delage. The network helps show where S.L. Delage may publish in the future.

Co-authorship network of co-authors of S.L. Delage

This figure shows the co-authorship network connecting the top 25 collaborators of S.L. Delage. A scholar is included among the top collaborators of S.L. Delage based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.L. Delage. S.L. Delage is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lacam, C., N. Michel, M. Oualli, et al.. (2024). InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE. Applied Physics Letters. 125(1). 1 indexed citations
2.
Kováč, Jaroslav, et al.. (2021). Theoretical and Experimental Substractions of Device Temperature Determination Utilizing I-V Characterization Applied on AlGaN/GaN HEMT. Electronics. 10(22). 2738–2738. 1 indexed citations
3.
Kováč, Jaroslav, et al.. (2019). Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT. Semiconductor Science and Technology. 34(6). 65021–65021. 10 indexed citations
4.
Kováč, Jaroslav, et al.. (2019). AlGaN/GaN HEMT channel temperature determination utilizing external heater. Semiconductor Science and Technology. 35(2). 25006–25006. 4 indexed citations
5.
Delage, S.L., S. Piotrowicz, Piero Gamarra, et al.. (2018). InAlGaN/GaN HEMT technology for Ka band applications. 234–237. 2 indexed citations
6.
7.
Maier, David, M. Alomari, N. Grandjean, et al.. (2012). InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment. IEEE Electron Device Letters. 33(7). 985–987. 91 indexed citations
8.
Kuzmı́k, J., S. Vitanov, C. Dua, et al.. (2012). Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors. Japanese Journal of Applied Physics. 51(5R). 54102–54102. 10 indexed citations
9.
Alomari, M., Michele Dipalo, Stefano Rossi, et al.. (2011). Diamond overgrown InAlN/GaN HEMT. Diamond and Related Materials. 20(4). 604–608. 57 indexed citations
10.
Jardel, Olivier, et al.. (2010). GaN power MMICs for X-Band T/R modules. 17–20. 7 indexed citations
11.
Piotrowicz, S., Z. Ouarch, E. Chartier, et al.. (2010). 43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers. 2010 IEEE MTT-S International Microwave Symposium. 505–508. 42 indexed citations
12.
Sarazin, N., E. Morvan, M.A. Poisson, et al.. (2009). AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz. IEEE Electron Device Letters. 31(1). 11–13. 104 indexed citations
13.
Tessier, Pierre‐Yves, et al.. (2007). Magnetron Sputtering of Aluminium Nitride Thin Films for Thermal Management. Plasma Processes and Polymers. 4(S1). S1–S5. 13 indexed citations
14.
Krozer, Viktor, Martin Schüßler, C. Sydlo, et al.. (2002). Fast physics based wafer-level reliability characterisation. 171–174.
15.
Landesman, Jean-Pierre, et al.. (2002). Temperature distributions in III-V microwave power transistors using spatially resolved photoluminescence mapping. D1114/1–D1114/8. 3 indexed citations
16.
Blanck, H., S.L. Delage, S. Cassette, et al.. (2002). High efficiency InGaP/GaAs HBT power amplifiers. 33. 115–119. 1 indexed citations
17.
Cassette, S., S.L. Delage, E. Chartier, et al.. (2001). Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability. Materials Science and Engineering B. 80(1-3). 279–283. 7 indexed citations
18.
Maneux, Cristell, Nathalie Labat, A. Touboul, et al.. (1998). Simulation of Base Current Evolution in C-In doped GaInP/GaAs HBT Under Current Induced Stress. European Solid-State Device Research Conference. 220–223. 1 indexed citations
19.
Forte-Poisson, M.A. di, C. Brylinski, S.L. Delage, et al.. (1994). GaInP/GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposition for voltage-controlled oscillators and power amplifier microwave monolithic integrated circuits. Materials Science and Engineering B. 28(1-3). 242–247. 8 indexed citations
20.
Plana, R., J. Graffeuil, S.L. Delage, et al.. (1992). Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor. Electronics Letters. 28(25). 2354–2356. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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