S.L. Delage

3.8k total citations
161 papers, 2.8k citations indexed

About

S.L. Delage is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S.L. Delage has authored 161 papers receiving a total of 2.8k indexed citations (citations by other indexed papers that have themselves been cited), including 140 papers in Electrical and Electronic Engineering, 100 papers in Condensed Matter Physics and 75 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S.L. Delage's work include GaN-based semiconductor devices and materials (100 papers), Semiconductor materials and devices (67 papers) and Radio Frequency Integrated Circuit Design (60 papers). S.L. Delage is often cited by papers focused on GaN-based semiconductor devices and materials (100 papers), Semiconductor materials and devices (67 papers) and Radio Frequency Integrated Circuit Design (60 papers). S.L. Delage collaborates with scholars based in France, Germany and Slovakia. S.L. Delage's co-authors include Subramanian S. Iyer, F. Arnaud d’Avitaya, E. Rosencher, E. Morvan, G.L. Patton, Christophe Gaquière, Ο. Thomas, F. M. d’Heurle, J.M.C. Stork and S. Tiwari and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

S.L. Delage

160 papers receiving 2.6k citations

Peers

Countries citing papers authored by S.L. Delage

Since Specialization

Citations

This map shows the geographic impact of S.L. Delage's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.L. Delage with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.L. Delage more than expected).

Fields of papers citing papers by S.L. Delage

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.L. Delage. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.L. Delage. The network helps show where S.L. Delage may publish in the future.

Co-authorship network of co-authors of S.L. Delage

This figure shows the co-authorship network connecting the top 25 collaborators of S.L. Delage. A scholar is included among the top collaborators of S.L. Delage based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.L. Delage. S.L. Delage is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE 2024 ·Applied Physics Letters ·(unknown), (unknown), (unknown), (unknown), C. Lacam, N. Michel, (unknown), M. Oualli, (unknown), (unknown), S. Piotrowicz, Christophe Gaquière, S.L. Delage	1
2	Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor 2020 ·Semiconductor Science and Technology ·(unknown), Jaroslav Kováč, Aleš Chvála, Martin Weis, (unknown), S.L. Delage	5
3	Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT 2019 ·Semiconductor Science and Technology ·(unknown), (unknown), Jaroslav Kováč, Aleš Chvála, (unknown), S.L. Delage	10
4	AlGaN/GaN HEMT channel temperature determination utilizing external heater 2019 ·Semiconductor Science and Technology ·(unknown), (unknown), Jaroslav Kováč, Aleš Chvála, (unknown), S.L. Delage	4
5	Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy 2017 ·physica status solidi (b) ·Albert Minj, (unknown), A. Cros, N. Garro, Piero Gamarra, S.L. Delage, P. Ruterana	2
6	Investigation of AlGaN/GaN Schottky structures by deep level fourier transient spectroscopy with optical excitation 2016 ·Ł. Stuchlíková, (unknown), (unknown), (unknown), L. Harmatha, S.L. Delage, (unknown)	1
7	Compact modelling of InAlN/GaN HEMT for low noise applications 2014 ·Semiconductor Science and Technology ·P. Sakalas, (unknown), S. Piotrowicz, Olivier Jardel, S.L. Delage, A. Mukherjee, A. Matulionis	5
8	Trap characterization of microwave GaN HEMTs based on frequency dispersion of the output-admittance 2014 ·(unknown), Anthony Martin, Michel Campovecchio, (unknown), Raymond Quéré, J. Jacquet, Olivier Jardel, (unknown), S.L. Delage	16
9	GaN power MMICs for X-Band T/R modules 2010 ·Olivier Jardel, (unknown), S. Piotrowicz, (unknown), E. Chartier, E. Morvan, (unknown), (unknown), S.L. Delage	7
10	43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers 2010 ·2010 IEEE MTT-S International Microwave Symposium ·S. Piotrowicz, Z. Ouarch, E. Chartier, R. Aubry, (unknown), D. Floriot, J. Jacquet, Olivier Jardel, E. Morvan, Tibault Reveyrand, N. Sarazin, S.L. Delage	42
11	AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources 2010 ·Journal of Applied Physics ·A. El Fatimy, N. Dyakonova, Yahya Moubarak Meziani, Taiichi Otsuji, W. Knap, (unknown), (unknown), D. Théron, Christophe Gaquière, M. A. Poisson, S.L. Delage, P. Prystawko, C. Skierbiszewski	113
12	GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application 2008 ·Journal of Crystal Growth ·M.A. Poisson, (unknown), M. Tordjman, J. Di Persio, R. Langer, L. Tóth, B. Pécz, M. Guziewicz, (unknown), R. Aubry, E. Morvan, N. Sarazin, Christophe Gaquière, Gaudenzio Meneghesso, Virginie Hoel, (unknown), S.L. Delage	3
13	Temperature distributions in III-V microwave power transistors using spatially resolved photoluminescence mapping 2002 ·Jean-Pierre Landesman, D. Floriot, (unknown), R. Bisaro, S.L. Delage, (unknown)	3
14	Fast physics based wafer-level reliability characterisation 2002 ·Viktor Krozer, Martin Schüßler, (unknown), (unknown), C. Sydlo, (unknown), S. Cassette, S.L. Delage, H.L. Hartnagel	0
15	High efficiency InGaP/GaAs HBT power amplifiers 2002 ·H. Blanck, S.L. Delage, S. Cassette, D. Floriot, E. Chartier, M.A. diForte-Poisson, (unknown), Paul Andrew Bourne	1
16	Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability 2001 ·Materials Science and Engineering B ·S. Cassette, S.L. Delage, E. Chartier, D. Floriot, M. A. Poisson, (unknown), C. Grattepain, (unknown), R. Plana, Stewart Bland	7
17	Simulation of Base Current Evolution in C-In doped GaInP/GaAs HBT Under Current Induced Stress 1998 ·European Solid-State Device Research Conference ·Cristell Maneux, Nathalie Labat, A. Touboul, Y. Danto, S.L. Delage, S. Cassette	1
18	Small-signal and noise model extraction technique for heterojunction bipolar transistor at microwave frequencies 1995 ·IEEE Transactions on Microwave Theory and Techniques ·(unknown), L. Escotte, R. Plana, J. Graffeuil, S.L. Delage, H. Blanck	33
19	Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor 1992 ·Electronics Letters ·R. Plana, J. Graffeuil, S.L. Delage, H. Blanck, M.A. di Forte-Poisson, C. Brylinski, E. Chartier	22
20	Electrical characterisation of epitaxially overgrown Si in Si<111>/CoSi ₂ /Si metal base transistor 1986 ·Electronics Letters ·S.L. Delage, P. A. Badoz, E. Rosencher, F. Arnaud d’Avitaya	7

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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