G. Göltz

460 total citations
17 papers, 350 citations indexed

About

G. Göltz is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Mechanical Engineering. According to data from OpenAlex, G. Göltz has authored 17 papers receiving a total of 350 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Atomic and Molecular Physics, and Optics, 10 papers in Electrical and Electronic Engineering and 7 papers in Mechanical Engineering. Recurrent topics in G. Göltz's work include Semiconductor materials and interfaces (9 papers), Silicon and Solar Cell Technologies (6 papers) and Intermetallics and Advanced Alloy Properties (3 papers). G. Göltz is often cited by papers focused on Semiconductor materials and interfaces (9 papers), Silicon and Solar Cell Technologies (6 papers) and Intermetallics and Advanced Alloy Properties (3 papers). G. Göltz collaborates with scholars based in France, United States and Germany. G. Göltz's co-authors include M‐A. Nicolet, I. Suni, S. S. Lau, M. G. Grimaldi, J. Torrès, J. Lajzérowicz, A. Seeger, G. Bomchil, T. Lepistö and H. Mehrer and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and IEEE Transactions on Electron Devices.

In The Last Decade

G. Göltz

17 papers receiving 325 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. Göltz France	8	236	151	148	83	69	17	350
T. R. Cass United States	11	301 1.3×	121 0.8×	163 1.1×	35 0.4×	39 0.6×	20	365
R.M. Ware United Kingdom	11	252 1.1×	138 0.9×	275 1.9×	50 0.6×	20 0.3×	19	399
D. M. Scott United States	11	226 1.0×	83 0.5×	262 1.8×	62 0.7×	48 0.7×	25	335
A. W. Vere United Kingdom	14	252 1.1×	237 1.6×	193 1.3×	40 0.5×	25 0.4×	32	427
Shigetoshi Takayanagi Japan	12	389 1.6×	232 1.5×	185 1.3×	40 0.5×	44 0.6×	31	474
K. E. Strege United States	11	358 1.5×	116 0.8×	343 2.3×	42 0.5×	36 0.5×	18	508
Morio Inoue Japan	11	536 2.3×	252 1.7×	165 1.1×	30 0.4×	45 0.7×	55	620
R. K. Crouch United States	9	119 0.5×	131 0.9×	82 0.6×	34 0.4×	33 0.5×	32	240
P. D. Augustus United Kingdom	14	315 1.3×	135 0.9×	273 1.8×	14 0.2×	56 0.8×	27	450
Jean‐Louis Santailler France	13	227 1.0×	202 1.3×	61 0.4×	81 1.0×	56 0.8×	43	392

Countries citing papers authored by G. Göltz

Since Specialization

Citations

This map shows the geographic impact of G. Göltz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Göltz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Göltz more than expected).

Fields of papers citing papers by G. Göltz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Göltz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Göltz. The network helps show where G. Göltz may publish in the future.

Co-authorship network of co-authors of G. Göltz

This figure shows the co-authorship network connecting the top 25 collaborators of G. Göltz. A scholar is included among the top collaborators of G. Göltz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Göltz. G. Göltz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

d’Heurle, F. M., J. Cotte, P. Gaś, et al.. (1993). Diffusion of elements implanted in amorphous titanium disilicide. Applied Surface Science. 73. 167–174. 2 indexed citations

Thomas, Ο., G. Scilla, P. Gaś, et al.. (1991). Diffusion of dopants in tungsten disilicide: effects of diffusion paths. Applied Surface Science. 53. 165–170. 4 indexed citations

Göltz, G., et al.. (1991). Study of the diffusion path during the lateral growth in the salicide process. Applied Surface Science. 53. 391–395. 5 indexed citations

Nygren, S., et al.. (1989). Dual-type CMOS gate electrodes by dopant diffusion from silicide. IEEE Transactions on Electron Devices. 36(6). 1087–1093. 7 indexed citations

Göltz, G., et al.. (1989). Towards development of a salicide WSi2 process using RTA. Applied Surface Science. 38(1-4). 441–446. 2 indexed citations

Torrès, J., J.C. Oberlin, R. Stuck, et al.. (1989). Influence of boron on WSi2 formation by direct reaction between tungsten and silicon. Applied Surface Science. 38(1-4). 186–194. 8 indexed citations

Göltz, G., et al.. (1986). Investigation of the dislocation arrangements in plastically deformed Fe single crystals using magnetic small-angle scattering of neutrons. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 54(2). 213–235. 14 indexed citations

Lajzérowicz, J., J. Torrès, G. Göltz, & R. Pantel. (1986). Kinetics of WSi2 formation at low and high temperatures. Thin Solid Films. 140(1). 23–28. 21 indexed citations

Göltz, G., J. Torrès, J. Lajzérowicz, & G. Bomchil. (1985). Formation and characterization of tungsten silicide layers. Thin Solid Films. 124(1). 19–26. 24 indexed citations

10.

Suni, I., G. Göltz, M. G. Grimaldi, M‐A. Nicolet, & S. S. Lau. (1982). Compensating impurity effect on epitaxial regrowth rate of amorphized Si. Applied Physics Letters. 40(3). 269–271. 102 indexed citations

11.

Suni, I., G. Göltz, M‐A. Nicolet, & S. S. Lau. (1982). Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium. Thin Solid Films. 93(1-2). 171–178. 89 indexed citations

12.

Göltz, G., R. Fernandez, Marc‐A. Nicolet, & D. K. Sadana. (1981). Study of Metastable Fe-W Films. MRS Proceedings. 7. 2 indexed citations

13.

Kettunen, P., T. Lepistö, G. Kostorz, & G. Göltz. (1981). Voids produced by fatigue in copper single crystals of 〈111〉-orientation. Acta Metallurgica. 29(6). 969–972. 23 indexed citations

14.

Göltz, G., A. Heidemann, H. Mehrer, A. Seeger, & D. Wolf. (1980). Study of atomic jump processes in sodium crystals by quasi-elastic neutron scattering. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 41(5). 723–744. 32 indexed citations

15.

Göltz, G. & H. Kronmüller. (1980). Magnetic small-angle scattering of neutrons in amorphous ferromagnets. Physics Letters A. 77(1). 70–72. 5 indexed citations

16.

Lubitz, K. & G. Göltz. (1979). The preparation of large spherical iron single crystals. Applied Physics A. 19(2). 237–239. 5 indexed citations

17.

Stierstadt, Klaus, et al.. (1976). Stress-induced crossover phenomena in nickel above its Curie point. Solid State Communications. 20(6). 601–603. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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