T. O. Sedgwick

1.8k total citations
78 papers, 1.4k citations indexed

About

T. O. Sedgwick is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, T. O. Sedgwick has authored 78 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Electrical and Electronic Engineering, 35 papers in Atomic and Molecular Physics, and Optics and 33 papers in Materials Chemistry. Recurrent topics in T. O. Sedgwick's work include Silicon and Solar Cell Technologies (34 papers), Semiconductor materials and devices (28 papers) and Silicon Nanostructures and Photoluminescence (28 papers). T. O. Sedgwick is often cited by papers focused on Silicon and Solar Cell Technologies (34 papers), Semiconductor materials and devices (28 papers) and Silicon Nanostructures and Photoluminescence (28 papers). T. O. Sedgwick collaborates with scholars based in United States, France and Switzerland. T. O. Sedgwick's co-authors include S. A. Cohen, P. Agnello, Detlev Grützmacher, J.E. Smith, A. E. Michel, V. R. Deline, T. S. Kuan, J. B. Lasky, M. Berkenblit and G. S. Oehrlein and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

T. O. Sedgwick

74 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. O. Sedgwick United States 19 1.2k 626 435 159 146 78 1.4k
P. Fahey United States 9 1.5k 1.2× 935 1.5× 407 0.9× 225 1.4× 113 0.8× 13 1.6k
A. A. van Gorkum Netherlands 20 589 0.5× 417 0.7× 492 1.1× 207 1.3× 134 0.9× 44 1.0k
Seijiro Furukawa Japan 20 952 0.8× 618 1.0× 398 0.9× 254 1.6× 138 0.9× 99 1.3k
L. Jastrzȩbski United States 21 1.6k 1.4× 933 1.5× 622 1.4× 96 0.6× 212 1.5× 114 1.9k
B.J. Sealy United Kingdom 17 836 0.7× 424 0.7× 509 1.2× 236 1.5× 111 0.8× 111 1.1k
Satoshi Komiya Japan 16 617 0.5× 501 0.8× 312 0.7× 103 0.6× 86 0.6× 80 894
P. M. Amirtharaj United States 16 1.0k 0.9× 561 0.9× 681 1.6× 137 0.9× 231 1.6× 48 1.3k
T. Y. Tan United States 17 818 0.7× 950 1.5× 438 1.0× 112 0.7× 126 0.9× 47 1.4k
D.K. Schroder United States 20 1.7k 1.4× 780 1.2× 481 1.1× 75 0.5× 242 1.7× 62 1.8k
J. Barbolla Spain 23 1.8k 1.5× 709 1.1× 536 1.2× 537 3.4× 273 1.9× 132 2.1k

Countries citing papers authored by T. O. Sedgwick

Since Specialization
Citations

This map shows the geographic impact of T. O. Sedgwick's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. O. Sedgwick with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. O. Sedgwick more than expected).

Fields of papers citing papers by T. O. Sedgwick

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. O. Sedgwick. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. O. Sedgwick. The network helps show where T. O. Sedgwick may publish in the future.

Co-authorship network of co-authors of T. O. Sedgwick

This figure shows the co-authorship network connecting the top 25 collaborators of T. O. Sedgwick. A scholar is included among the top collaborators of T. O. Sedgwick based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. O. Sedgwick. T. O. Sedgwick is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Iyer, Shankar S., et al.. (2002). High-performance CMOS fabricated on ultrathin BESOI with sub-10 nm ttv. ed 36. 134–135.
2.
Robinson, H. G., et al.. (1995). Study of end of range loop interactions with B+ implant damage using a boron doped diffusion layer. Journal of Applied Physics. 78(4). 2298–2302. 4 indexed citations
3.
Cheng, J.-P., V. P. Kesan, Detlev Grützmacher, & T. O. Sedgwick. (1994). Cyclotron effective mass of holes in Si1−xGex/Si quantum wells: Strain and nonparabolicity effects. Applied Physics Letters. 64(13). 1681–1683. 14 indexed citations
4.
Zaslavsky, A., K. R. Milkove, K. Chan, et al.. (1994). Fabrication of three-terminal resonant tunneling devices in silicon-based material. Applied Physics Letters. 64(13). 1699–1701. 5 indexed citations
5.
Agnello, P. & T. O. Sedgwick. (1992). Inhibition of Silicon Oxidation during Low Temperature Epitaxial Growth. Journal of The Electrochemical Society. 139(4). 1140–1146. 6 indexed citations
6.
Sedgwick, T. O., P. Agnello, M. Berkenblit, & T. S. Kuan. (1991). Growth of Facet‐Free Selective Silicon Epitaxy at Low Temperature and Atmospheric Pressure. Journal of The Electrochemical Society. 138(10). 3042–3047. 18 indexed citations
7.
Hamilton, B., T. O. Sedgwick, & Jeffrey C. Gelpey. (1988). Characterisation of Ion Implanted and Thin Epitaxial Layer Structures Using Photoluminescence. MRS Proceedings. 100. 2 indexed citations
8.
Ganin, E., G.A. Sai-Halasz, & T. O. Sedgwick. (1987). Enhanced Diffusion During Rapid Thermal Annealing Of Indium And Boron In Double Implanted Silicon. MRS Proceedings. 92. 4 indexed citations
9.
Kalish, R., T. O. Sedgwick, Sebastian Mäder, & Steven C. Shatas. (1984). Transient enhanced diffusion in arsenic-implanted short time annealed silicon. Applied Physics Letters. 44(1). 107–109. 52 indexed citations
10.
Weinberg, Z. A., V. R. Deline, T. O. Sedgwick, et al.. (1983). Investigation of the silicon beading phenomena during zone-melting recrystallization. Applied Physics Letters. 43(12). 1105–1107. 8 indexed citations
11.
12.
13.
Suran, G., et al.. (1980). Magnetic properties of laser annealed garnet films as determined by FMR and bubble statics. IEEE Transactions on Magnetics. 16(5). 1035–1037. 5 indexed citations
14.
Schultz, L., E. A. Giess, R. T. Hodgson, & T. O. Sedgwick. (1979). Permanent local modification of the magnetic bubble properties of epitaxial garnet films by laser annealing. Journal of Applied Physics. 50(9). 5902–5905. 24 indexed citations
15.
Sedgwick, T. O., et al.. (1975). Inelastic light scattering studies of silicon chemical vapor deposition (CVD) systems. Journal of Crystal Growth. 31. 264–273. 41 indexed citations
16.
Sedgwick, T. O.. (1974). Field Effect Modulated Photoluminescence in ZnO. Journal of The Electrochemical Society. 121(3). 452–452. 3 indexed citations
17.
Osburn, C. M., et al.. (1974). The influence of silicon heat treatments on the minority carrier generation and the dielectric breakdown in MOS structures. Journal of Electronic Materials. 3(2). 579–599. 8 indexed citations
18.
Sedgwick, T. O., et al.. (1972). A Novel Method for Fabrication of Ultrafine Metal Lines by Electron Beams. Journal of The Electrochemical Society. 119(12). 1769–1769. 29 indexed citations
19.
Sedgwick, T. O.. (1965). Bourdon Gauge Determination of Chemical Equilibrium in the Ge-Cl[sub 2] System. Journal of The Electrochemical Society. 112(5). 496–496. 10 indexed citations
20.
Sedgwick, T. O.. (1964). Analysis of the Hydrogen Reduction of Silicon Tetrachloride Process on the Basis of a Quasi-Equilibrium Model. Journal of The Electrochemical Society. 111(12). 1381–1381. 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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