P. L. Trouilloud

5.6k citations

71 papers · 4.3k indexed · 3 hit papers · h-index 26

Atomic and Molecular Physics, and Optics top 0.5%
Electronic, Optical and Magnetic Materials top 1%
Electrical and Electronic Engineering top 2%
Condensed Matter Physics top 1%
Materials Chemistry top 5%

Co-authors: D. C. Worledge J. Z. Sun David W. Abraham S. Brown E. J. O’Sullivan G. Hu Yu Lu S. Parkin
Topics: Magnetic properties of thin films (64 papers)Magnetic Properties and Applications (25 papers)Advanced Memory and Neural Computing (17 papers)
Cited by: Electronic, Optical and Magnetic Materials Condensed Matter Physics Atomic and Molecular Physics, and Optics
Journals: Physical Review Letters Nano Letters Physical review. B, Condensed matter
Partner nations: United States France

In The Last Decade

P. L. Trouilloud

71 papers receiving 4.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

1999 915 citations S. Parkin, E. J. O’Sullivan et al. Journal of Applied Physics profile →
Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

2011 560 citations D. C. Worledge, G. Hu et al. Applied Physics Letters profile →
Grain-boundary effects on the magnetoresistance properties of perovskite manganite films

1996 493 citations Alka Gupta, G. Q. Gong et al. profile →

Peers

Countries citing papers authored by P. L. Trouilloud

Since Specialization

Citations

This map shows the geographic impact of P. L. Trouilloud's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. L. Trouilloud with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. L. Trouilloud more than expected).

Fields of papers citing papers by P. L. Trouilloud

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. L. Trouilloud. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. L. Trouilloud. The network helps show where P. L. Trouilloud may publish in the future.

Co-authorship network of co-authors of P. L. Trouilloud

This figure shows the co-authorship network connecting the top 25 collaborators of P. L. Trouilloud. A scholar is included among the top collaborators of P. L. Trouilloud based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. L. Trouilloud. P. L. Trouilloud is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	First Demonstration of High Retention Energy Barriers and 2 ns Switching, Using Magnetic Ordered-Alloy-Based STT MRAM Devices 2024 ·M. Gottwald,G. Hu,P. L. Trouilloud,(unknown),Christopher Safranski,(unknown),S. Brown,J. Bruley,C. D’Emic,(unknown),Hoeryong Jung,C. Lavoie,(unknown),(unknown),M. Robbins,J. Z. Sun,Pouya Hashemi,D. C. Worledge	1
2	Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications 2022 ·IEEE Transactions on Electron Devices ·Christopher Safranski,G. Hu,J. Z. Sun,Pouya Hashemi,S. Brown,L. Buzi,C. D’Emic,Eric R. J. Edwards,E. Galligan,M. Gottwald,Oki Gunawan,(unknown),(unknown),Juhyun Kim,(unknown),P. L. Trouilloud,D. C. Worledge	13
3	Demonstration of Nanosecond Operation in Stochastic Magnetic Tunnel Junctions 2021 ·Nano Letters ·Christopher Safranski,J.H. Kaiser,P. L. Trouilloud,Pouya Hashemi,G. Hu,J. Z. Sun	70
4	Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory 2016 ·IEEE Magnetics Letters ·J. Nowak,(unknown),J. Z. Sun,G. Hu,(unknown),(unknown),Anthony Annunziata,G. Lauer,(unknown),E. J. O’Sullivan,P. L. Trouilloud,Younghyun Kim,D. C. Worledge	109
5	STT-MRAM with double magnetic tunnel junctions 2015 ·G. Hu,(unknown),J. Nowak,J. Z. Sun,(unknown),Anthony Annunziata,S. Brown,(unknown),(unknown),G. Lauer,(unknown),Nathan Marchack,(unknown),E. J. O’Sullivan,(unknown),M. C. Reuter,R. P. Robertazzi,P. L. Trouilloud,Yu Zhu,D. C. Worledge	64
6	Development of perpendicularly magnetized Ta\|CoFeB\|MgO-based tunnel junctions at IBM (invited) 2014 ·Journal of Applied Physics ·D. C. Worledge,G. Hu,David W. Abraham,P. L. Trouilloud,S. Brown	38
7	Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy 2012 ·Applied Physics Letters ·M. Gajek,J. Nowak,J. Z. Sun,P. L. Trouilloud,E. J. O’Sullivan,David W. Abraham,M. C. Gaidis,G. Hu,S. Brown,Yanyan Zhu,R. P. Robertazzi,W. J. Gallagher,D. C. Worledge	226
8	Recent Advances in Spin Torque MRAM 2012 ·D. C. Worledge,M. Gajek,David W. Abraham,S. Brown,M. C. Gaidis,G. Hu,J. Nowak,E. J. O’Sullivan,R. P. Robertazzi,J. Z. Sun,P. L. Trouilloud,W. J. Gallagher	3
9	Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy 2011 ·IEEE Magnetics Letters ·J. Nowak,R. P. Robertazzi,J. Z. Sun,G. Hu,David W. Abraham,P. L. Trouilloud,S. Brown,M. C. Gaidis,E. J. O’Sullivan,W. J. Gallagher,D. C. Worledge	66
10	Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctionsbreakdown → 2011 ·Applied Physics Letters ·D. C. Worledge,G. Hu,David W. Abraham,J. Z. Sun,P. L. Trouilloud,J. Nowak,S. Brown,M. C. Gaidis,E. J. O’Sullivan,R. P. Robertazzi	560
11	Effect of subvolume excitation and spin-torque efficiency on magnetic switching 2011 ·Physical Review B ·J. Z. Sun,R. P. Robertazzi,J. Nowak,P. L. Trouilloud,G. Hu,David W. Abraham,M. C. Gaidis,S. Brown,E. J. O’Sullivan,W. J. Gallagher,D. C. Worledge	128
12	A three-terminal spin-torque-driven magnetic switch 2009 ·Applied Physics Letters ·J. Z. Sun,M. C. Gaidis,E. J. O’Sullivan,Eric Joseph,G. Hu,David W. Abraham,J. Nowak,P. L. Trouilloud,Yu Lu,S. Brown,D. C. Worledge,W. J. Gallagher	58
13	Two-level BEOL processing for rapid iteration in MRAM development 2006 ·IBM Journal of Research and Development ·M. C. Gaidis,E. J. O’Sullivan,J. Nowak,Yuan Lü,S. Kanakasabapathy,P. L. Trouilloud,D. C. Worledge,S. Assefa,K. R. Milkove,(unknown),W. J. Gallagher	26
14	Materials and devices for reduced switching field toggle magnetic random access memory 2006 ·Journal of Applied Physics ·D. C. Worledge,P. L. Trouilloud,M. C. Gaidis,Yuan Lü,David W. Abraham,S. Assefa,S. Brown,E. Galligan,S. Kanakasabapathy,J. Nowak,E. J. O’Sullivan,R. P. Robertazzi,(unknown),W. J. Gallagher	13
15	Magnetic domain structures of La0.67Sr0.33MnO3 thin films with different morphologies 1997 ·Journal of Applied Physics ·P. Lecoeur,P. L. Trouilloud,Gang Xiao,Alka Gupta,G. Q. Gong,(unknown)	63
16	Shape-anisotropy-controlled magnetoresistive response in magnetic tunnel junctions 1997 ·Applied Physics Letters ·Yu Lu,R. A. Altman,A. C. Marley,S. A. Rishton,P. L. Trouilloud,Gang Xiao,W. J. Gallagher,S. Parkin	105
17	Methods for wide-field Kerr imaging of small magnetic devices 1994 ·IEEE Transactions on Magnetics ·P. L. Trouilloud,B. Petek,B. E. Argyle	9
18	A study of MIG head readout waveform asymmetry, using magnetic force and Kerr microscopy 1992 ·IEEE Transactions on Magnetics ·S. Takayama,(unknown),(unknown),(unknown),B. E. Argyle,P. L. Trouilloud	5
19	Domain studies in single-crystal ferrite MIG heads with image-enhanced, wide-field, Kerr microscopy 1992 ·(unknown),B. E. Argyle,P. L. Trouilloud	7
20	Domain conversion under high frequency excitation in inductive thin film heads 1989 ·IEEE Transactions on Magnetics ·P. L. Trouilloud,B. E. Argyle,B. Petek,D. Heřman	25

About P. L. Trouilloud

P. L. Trouilloud is a scholar working on Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Condensed Matter Physics, having authored 71 papers that have together received 4.3k indexed citations. Recurring topics across this work include Magnetic properties of thin films (64 papers), Magnetic Properties and Applications (25 papers) and Advanced Memory and Neural Computing (17 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (2.2k citations), Condensed Matter Physics (1.4k citations) and Atomic and Molecular Physics, and Optics (3.3k citations). P. L. Trouilloud has collaborated with scholars based in United States and France. Frequent co-authors include D. C. Worledge, J. Z. Sun, David W. Abraham, S. Brown, E. J. O’Sullivan, G. Hu, Yu Lu, S. Parkin, J. Nowak and M. C. Gaidis. Their work appears in journals such as Physical Review Letters, Nano Letters and Physical review. B, Condensed matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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