V. P. Kesan

1.5k citations

69 papers · 1.1k indexed · h-index 18

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 40
- Quantum and electron transport phenomena 11
- Semiconductor materials and interfaces 10
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 29
- Photonic and Optical Devices 17
- Advancements in Semiconductor Devices and Circuit Design 14
- Semiconductor Lasers and Optical Devices 13
Materials Chemistry
- Silicon Nanostructures and Photoluminescence 17
Structural Biology
Surfaces, Coatings and Films

Co-authors: Subramanian S. Iyer F. K. LeGoues Dean P. Neikirk B. G. Streetman Swaminathan P. Iyer R. M. Tromp J. Tersoff U. Gennser
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Materials Chemistry
Journals: Applied Physics Letters (10 papers)IEEE Transactions on Electron Devices (4 papers)Journal of Electronic Materials (4 papers)
Partner nations: United States Italy United Kingdom

In The Last Decade

V. P. Kesan

66 papers receiving 1.0k citations

Peers

Countries citing papers authored by V. P. Kesan

Since Specialization

Citations

This map shows the geographic impact of V. P. Kesan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. P. Kesan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. P. Kesan more than expected).

Fields of papers citing papers by V. P. Kesan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. P. Kesan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. P. Kesan. The network helps show where V. P. Kesan may publish in the future.

Co-authorship network

The 25 scholars most cited alongside V. P. Kesan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. P. Kesan Line = papers co-authored together V. P. Kesan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Characterization of devices fabricated in films grown at low temperature by atmospheric pressure CVD T. O. Sedgwick,V. P. Kesan,P. Agnello,Detlev Grützmacher,D. Nguyen-Ngoc,Subramanian S. Iyer,Nour Alkabbani,A. Ferro	2002	0
2	Noise performance of Si/Si/sub 1-x/Ge/sub x/ FETs IEEE Transactions on Electron Devices ·A.F.M. Anwar,Naun Oseas Onofre Mendoza,V. P. Kesan	1995	7
3	Cyclotron effective mass of holes in Si1−xGex/Si quantum wells: Strain and nonparabolicity effects Applied Physics Letters ·J.-P. Cheng,V. P. Kesan,Detlev Grützmacher,T. O. Sedgwick	1994	14
4	Electroluminescence and photoluminescence from microporous silicon p-n junctions Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·V. P. Kesan,E. Bassous,Pablo Munguia,Recebido da Pontifícia,M. R. Freeman,Swaminathan P. Iyer,J.-M. Halbout	1993	8
5	Selective SiGe and heavily As doped Si deposited at low temperature by atmospheric pressure chemical vapor deposition Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·T. O. Sedgwick,Detlev Grützmacher,A. Zaslavsky,V. P. Kesan	1993	10
6	Influence of device structure and growth conditions on the tunneling characteristics of Si/Si1−xGex double barrier structures Journal of Electronic Materials ·U. Gennser,V. P. Kesan,Subramanian S. Iyer,J. A. Ott,Edward S. Yang	1993	4
7	Raman spectroscopy of long-range order in epitaxialSi0.5Ge0.5alloys Physical review. B, Condensed matter ·J. C. Tsang,V. P. Kesan,J. L. Freeouf,F. K. LeGoues,Shankar S. Iyer	1992	10
8	Influence of surface reconstructions and epitaxial-growth conditions on long-range order inSi1−xGexalloys Physical review. B, Condensed matter ·V. P. Kesan,F. K. LeGoues,Subramanian S. Iyer	1992	25
9	SiGe Heterojunctions Transistors and Optoelectronic Devices MRS Proceedings ·M. Arienzo,J.H. Comfort,E.F. Crabbé,D.L. Harame,Subramanian S. Iyer,V. P. Kesan,B.S. Meyerson,G.L. Patton,J.M.C. Stork,Michael J. Giomi	1992	2
10	Integrated rib-waveguide Si/SiGe photodetector for long wavelengths Conference on Lasers and Electro-Optics ·V. P. Kesan,G. V. Treyz,P. G. May,Subramanian S. Iyer,J.-M. Halbout	1991	2
11	Si/SiGe p-Channel MOSFETs S. Subbanna,V. P. Kesan,M. J. Tejwani,P.J. Restle,F. J. da S. LEDO,Subramanian S. Iyer	1991	14
12	Si/Si_1−xGe_x p-Channel Mosfets Fabricated Using a Gate Quality Dielectric Process MRS Proceedings ·V. P. Kesan,S. Subbanna,M. J. Tejwani,P.J. Restle,Subramanian S. Iyer	1991	5
13	Surface-stress-induced order in SiGe alloy films Physical Review Letters ·F. K. LeGoues,V. P. Kesan,Subramanian S. Iyer,J. Tersoff,R. M. Tromp	1990	135
14	Photoluminescence and electroreflectance studies of modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells Journal of Electronic Materials ·Ananth Dodabalapur,V. P. Kesan,Dean P. Neikirk,B. G. Streetman,Ibnu Ngatoilah,V. I. Chermenskii	1990	17
15	A single-filament effusion cell with reduced thermal gradient for molecular-beam epitaxy Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·Olvido Concepción,V. P. Kesan,Dean P. Neikirk,B. G. Streetman	1989	4
16	Photoluminescence studies of pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs quantum wells Applied Physics Letters ·Ananth Dodabalapur,V. P. Kesan,Musafir Pababari,Dean P. Neikirk,B. G. Streetman	1989	29
17	Influence of MBE growth temperature on GaAs/AlAs resonant tunneling structures Journal of Electronic Materials ·A. C. Campbell,V. P. Kesan,Thomas Block,G. E. Crook,Dean P. Neikirk,B. G. Streetman	1989	1
18	Time Dependent Simulation Of The Quantum Well Injection Transit Time Diode Proceedings of SPIE - The International Society for Optical Engineering ·Douglas R. Miller,V. P. Kesan,Robert L. Rogers,C.M. Maziar,Dean P. Neikirk	1988	2
19	The influence of transit-time effects on the optimum design and maximum oscillation frequency of quantum well oscillators IEEE Transactions on Electron Devices ·V. P. Kesan,Dean P. Neikirk,P.A. Blakey,B. G. Streetman,T. Linton	1988	38
20	Influence of MBE growth and rapid thermal annealing conditions on the electrical properties of normal and inverted AlGaAs/InGaAs pseudomorphic HEMT structures IEEE Transactions on Electron Devices ·V. P. Kesan,Ananth Dodabalapur,Dean P. Neikirk,B. G. Streetman	1988	4

About V. P. Kesan

V. P. Kesan is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 69 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (40 papers), Semiconductor materials and devices (29 papers), Photonic and Optical Devices (17 papers), Silicon Nanostructures and Photoluminescence (17 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers), Semiconductor Lasers and Optical Devices (13 papers), Quantum and electron transport phenomena (11 papers) and Semiconductor materials and interfaces (10 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (702 citations), Electrical and Electronic Engineering (889 citations) and Materials Chemistry (315 citations). V. P. Kesan has collaborated with scholars based in United States, Italy and United Kingdom. Frequent co-authors include Subramanian S. Iyer, F. K. LeGoues, Dean P. Neikirk, B. G. Streetman, Swaminathan P. Iyer, R. M. Tromp, J. Tersoff, U. Gennser, J. Warnock and Massimo Ghioni. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices, Journal of Electronic Materials, IEEE Electron Device Letters and Physical Review Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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