H. Lahrèche

1.2k citations

37 papers · 1.0k indexed · h-index 15

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 31
- GaN-based semiconductor devices and materials 31
Electronic, Optical and Magnetic Materials 15
- Ga2O3 and related materials 15

Co-authors: B. Beaumont P. Gibart P. Vennéguès M. Laügt M. Leroux P. de Mierry E. Feltin P. Bove
Journals: Applied Physics Letters (4 papers)Electronics Letters (4 papers)Journal of Crystal Growth (3 papers)Journal of Electronic Materials (3 papers)IEEE Electron Device Letters (2 papers)
Partner nations: France United States Poland

In The Last Decade

H. Lahrèche

37 papers receiving 976 citations

Peers

Countries citing papers authored by H. Lahrèche

Since Specialization

Citations

This map shows the geographic impact of H. Lahrèche's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Lahrèche with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Lahrèche more than expected).

Fields of papers citing papers by H. Lahrèche

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Lahrèche. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Lahrèche. The network helps show where H. Lahrèche may publish in the future.

Co-authors

The 25 scholars most cited alongside H. Lahrèche, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Lahrèche Line = papers co-authored together H. Lahrèche links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate Electronics Letters ·N. Defrance, Y. Douvry, Virginie Hoel, Jean-Claude Gerbedoen, A. Soltani, Michel Rousseau, J.C. De Jaeger, R. Langer, H. Lahrèche	2010	4
2	Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators Applied Physics Letters ·M. Faucher, B. Grimbert, Y. Cordier, Nicolas Baron, A. Wilk, H. Lahrèche, P. Bove, Manuel François, Pascal Tilmant, Thomas Géhin, Christiane Legrand, M. Werquin, L. Buchaillot, Christophe Gaquière, D. Théron	2009	48
3	Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC Journal of Physics Conference Series ·M. Guziewicz, E. Kamińska, A. Piotrowska, K. Gołaszewska, J. Z. Domagała, M. A. Di-Forte Poisson, H. Lahrèche, R. Langer, P. Bove	2008	1
4	First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate Electronics Letters ·Virginie Hoel, N. Defrance, J.C. de Jaeger, H. Gérard, Christophe Gaquière, H. Lahrèche, R. Langer, A. Wilk, Melania Lijadi, S.L. Delage	2008	6
5	Electrical Performance of GaN Schottky Rectifiers on Si Substrates Journal of The Electrochemical Society ·Lars F. Voss, S. J. Pearton, F. Ren, P. Bove, H. Lahrèche, J. Thuret	2006	9
6	Al Ga N ∕ Ga N high electron mobility transistors on Si∕SiO2/poly-SiC substrates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Travis J. Anderson, F. Ren, Lars F. Voss, M. Hlad, F. Ren, Lance Covert, Jenshan Lin, S. J. Pearton, P. Bove, H. Lahrèche, J. Thuret	2006	6
7	Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate IEEE Electron Device Letters ·D. Ducatteau, A. Minko, Virginie Hoel, E. Morvan, E. Delos, B. Grimbert, H. Lahrèche, P. Bove, Christophe Gaquière, J.C. de Jaeger, S.L. Delage	2005	88
8	First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs IEICE Transactions on Electronics ·Xin Zhu, Dimitris Pavlidis, Guangyuan Zhao, P. Bove, H. Lahrèche, R. Langer	2003	2
9	Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE Università degli Studi di Bologna ·William Sutton, Dimitris Pavlidis, H. Lahrèche, B. Damilano, R. Langer	2003	2
10	Growth of GaN on (111) Si: a route towards self-supported GaN Journal of Crystal Growth ·H. Lahrèche, G. Nataf, E. Feltin, B. Beaumont, P. Gibart	2001	10
11	Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy Japanese Journal of Applied Physics ·E. Feltin, S. Dalmasso, P. de Mierry, B. Beaumont, H. Lahrèche, A. Bouillé, Helge Haas, Mathieu Leroux, P. Gibart	2001	39
12	Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy Applied Physics Letters ·E. Feltin, B. Beaumont, M. Laügt, P. de Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart	2001	221
13	Static measurements of GaN MESFETs on (111) Sisubstrates Electronics Letters ·Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, J.C. De Jaeger, H. Lahrèche, P. Gibart	2001	13
14	Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN Journal of Electronic Materials ·B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Théron, Y. Crosnier, H. Lahrèche, F. Omnès	2000	36
15	Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111) Journal of Crystal Growth ·H. Lahrèche, P. Vennéguès, O. Tottereau, M. Laügt, P. Lorenzini, M. Leroux, B. Beaumont, P. Gibart	2000	82
16	Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy Journal of Applied Physics ·H. Lahrèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont, P. Gibart	2000	74
17	Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE) Diamond and Related Materials ·H. Lahrèche, M. Vaille, P. Vennéguès, M. Laügt, B. Beaumont, P. Gibart	2000	4
18	Low pressure MOVPE grown AlGaN for UV photodetector applications Materials Science and Engineering B ·F. Omnès, Norman Marenco, S. Haffouz, H. Lahrèche, P. de Mierry, B. Beaumont, P.R. Hageman, E. Monroy, F. Calle, E. Muñoz	1999	11
19	Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth Journal of Crystal Growth ·H. Lahrèche, P. Vennéguès, B. Beaumont, P. Gibart	1999	104
20	Near-Band Gap Selective Photoluminescence in Wurtzite GaN physica status solidi (b) ·G. Neu, M. Teisseire, B. Beaumont, H. Lahrèche, P. Gibart	1999	11

About H. Lahrèche

H. Lahrèche is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 37 papers that have together received 1.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (31 papers), Ga2O3 and related materials (15 papers), Silicon Carbide Semiconductor Technologies (11 papers), Semiconductor Quantum Structures and Devices (10 papers), Semiconductor materials and devices (10 papers), ZnO doping and properties (7 papers), Radio Frequency Integrated Circuit Design (6 papers) and Metal and Thin Film Mechanics (6 papers). The work is most often cited by research in Condensed Matter Physics (912 citations), Electronic, Optical and Magnetic Materials (438 citations), Mechanics of Materials (262 citations), Electrical and Electronic Engineering (501 citations) and Atomic and Molecular Physics, and Optics (269 citations). H. Lahrèche has collaborated with scholars based in France, United States and Poland. Frequent co-authors include B. Beaumont, P. Gibart, P. Vennéguès, M. Laügt, M. Leroux, P. de Mierry, E. Feltin, P. Bove, M. Vaille and Christophe Gaquière. Their work appears in journals such as Applied Physics Letters, Electronics Letters, Journal of Crystal Growth, Journal of Electronic Materials and IEEE Electron Device Letters.

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