D. Tsvetkov

985 citations

54 papers · 778 indexed · h-index 16

Condensed Matter Physics top 2%
Electrical and Electronic Engineering top 10%
Materials Chemistry
Electronic, Optical and Magnetic Materials top 10%
Atomic and Molecular Physics, and Optics top 10%

Co-authors: V. Dmitriev A. S. Zubrilov Albert V. Davydov Norman A. Sanford Steven P. DenBaars Umesh K. Mishra В. И. Николаев А. В. Дмитриев
Topics: GaN-based semiconductor devices and materials (43 papers)Ga2O3 and related materials (23 papers)Silicon Carbide Semiconductor Technologies (14 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics Journal of Physics Condensed Matter
Partner nations: United States Russia China

In The Last Decade

D. Tsvetkov

52 papers receiving 739 citations

Peers

Countries citing papers authored by D. Tsvetkov

Since Specialization

Citations

This map shows the geographic impact of D. Tsvetkov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Tsvetkov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Tsvetkov more than expected).

Fields of papers citing papers by D. Tsvetkov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Tsvetkov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Tsvetkov. The network helps show where D. Tsvetkov may publish in the future.

Co-authorship network of co-authors of D. Tsvetkov

This figure shows the co-authorship network connecting the top 25 collaborators of D. Tsvetkov. A scholar is included among the top collaborators of D. Tsvetkov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Tsvetkov. D. Tsvetkov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	On the fundamental solution of the heat transfer problem in one-dimensional harmonic crystals 2019 ·Computational Continuum Mechanics ·(unknown),(unknown),А. М. Кривцов,D. Tsvetkov	1
2	Thermal processes in a one‐dimensional crystal with regard for the second neighbor interaction 2019 ·ZAMM ‐ Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik ·(unknown),А. М. Кривцов,А. В. Порубов,D. Tsvetkov	4
3	Neural networks and data-driven surrogate models for simulation of steady-state fracture growth 2019 ·Materials Physics and Mechanics ·(unknown),(unknown),(unknown),(unknown),(unknown),D. Tsvetkov	8
4	Thermal echo in a finite one-dimensional harmonic crystal 2018 ·Journal of Physics Condensed Matter ·(unknown),А. М. Кривцов,D. Tsvetkov	8
5	Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices 2016 ·Materials science forum ·Michael O’Loughlin,Albert A. Burk,D. Tsvetkov,(unknown),John W. Palmour	8
6	Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires 2012 ·Nanotechnology ·Gwénolé Jacopin,Lorenzo Rigutti,(unknown),Pierre Lavenus,F. H. Julien,Albert V. Davydov,D. Tsvetkov,Kris A. Bertness,Norman A. Sanford,John B. Schlager,Maria Tchernycheva	20
7	Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires 2011 ·Nanotechnology ·Aric W. Sanders,Paul T. Blanchard,Kris A. Bertness,(unknown),Christopher M. Dodson,Todd E. Harvey,(unknown),(unknown),John B. Schlager,Norman A. Sanford,Ann N. Chiaramonti,Albert V. Davydov,Abhishek Motayed,D. Tsvetkov	8
8	Surface preparation of substrates from bulk GaN crystals 2007 ·Journal of Crystal Growth ·Drew Hanser,(unknown),Edward A. Preble,(unknown),Xueping Xu,D. Tsvetkov,Lianghong Liu	62
9	Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth 2006 ·Journal of Crystal Growth ·Theeradetch Detchprohm,Yong Xia,Y. Xi,Mingwei Zhu,Wei Zhao,(unknown),E. Fred Schubert,(unknown),D. Tsvetkov,Drew Hanser,Christian Wetzel	26
10	Measurement of second order susceptibilities of GaN and AlGaN 2005 ·Journal of Applied Physics ·Norman A. Sanford,Albert V. Davydov,D. Tsvetkov,А. В. Дмитриев,Sarah L. Keller,Umesh K. Mishra,Steven P. DenBaars,(unknown),Jeong-Yeol Han,R. J. Molnar	57
11	AlGaN/GaN Structures Grown by HVPE: Growth and Characterization 2003 ·MRS Proceedings ·M. A. Mastro,D. Tsvetkov,А. И. Печников,V. Soukhoveev,G. H. Gainer,A. Usikov,V. Dmitriev,B. Luo,F. Ren,Kwang Hyeon Baik,S. J. Pearton	6
12	RF performance of HVPE-grown AlGaN/GaN HEMTs 2003 ·Solid-State Electronics ·M. A. Mastro,D. Tsvetkov,V. Soukhoveev,A. Usikov,V. Dmitriev,B. Luo,F. Ren,Kwang Hyeon Baik,S. J. Pearton	10
13	Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy 2001 ·physica status solidi (a) ·Yu. Melnik,D. Tsvetkov,А. И. Печников,И.П. Никитина,N.I. Kuznetsov,V. Dmitriev	21
14	Characterization of 2.5-Inch Diameter Bulk GaN Grown from Melt-Solution 2001 ·physica status solidi (a) ·V. Soukhoveev,V. Ivantsov,Yu. Melnik,Albert V. Davydov,D. Tsvetkov,(unknown),И.П. Никитина,A. S. Zubrilov,A. A. Lavrentiev,V. Dmitriev	9
15	AlN/AlGaN Bragg Reflectors Grown by Gas Source Molecular Beam Epitaxy 2001 ·physica status solidi (a) ·G. Kipshidze,V. Kuryatkov,Kiho Choi,(unknown),B. Borisov,S. A. Nikishin,M. Holtz,D. Tsvetkov,V. Dmitriev,H. Temkin	13
16	Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films 2000 ·MRS Internet Journal of Nitride Semiconductor Research ·A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,A. Usikov,N. M. Shmidt,(unknown),D. Tsvetkov,(unknown),V. Dmitriev,M. G. Mil’vidskiĭ,(unknown)	4
17	High quality GaN layers grown by hydride vapor phase epitaxy — a high resolution X-ray diffractometry and synchrotron X-ray topography study 2000 ·Materials Science and Engineering B ·J. Chaudhuri,(unknown),С. И. Степанов,D. Tsvetkov,A. E. Cherenkov,V. Dmitriev,Z. U. Rek	12
18	The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates 1999 ·Journal of Crystal Growth ·T.S. Cheng,С. В. Новиков,(unknown),R. P. Campion,(unknown),Yu. Melnik,D. Tsvetkov,С. И. Степанов,A. E. Cherenkov,V. Dmitriev,D. Korakakis,O. H. Hughes,C. T. Foxon	8
19	GaN and AlN Layers Grown by Nano Epitaxial Lateral Overgrowth Technique on Porous Substrates 1999 ·MRS Proceedings ·M. G. Mynbaeva,A. N. Titkov,(unknown),A. S. Zubrilov,В. В. Ратников,V. Yu. Davydov,N.I. Kuznetsov,K. D. Mynbaev,С. И. Степанов,A. E. Cherenkov,(unknown),D. Tsvetkov,V. Dmitriev	1
20	Optical Properties of Nitride-based Structures Grown on 6H-SiC 1996 ·MRS Internet Journal of Nitride Semiconductor Research ·D. Tsvetkov,A. S. Zubrilov,В. И. Николаев,V. A. Soloviev,V. Dmitriev	10

About D. Tsvetkov

D. Tsvetkov is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 54 papers that have together received 778 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (43 papers), Ga2O3 and related materials (23 papers) and Silicon Carbide Semiconductor Technologies (14 papers). The work is most often cited by research in Condensed Matter Physics (577 citations), Electronic, Optical and Magnetic Materials (274 citations) and Atomic and Molecular Physics, and Optics (210 citations). D. Tsvetkov has collaborated with scholars based in United States, Russia and China. Frequent co-authors include V. Dmitriev, A. S. Zubrilov, Albert V. Davydov, Norman A. Sanford, Steven P. DenBaars, Umesh K. Mishra, В. И. Николаев, А. В. Дмитриев, K. G. Irvine and А. М. Кривцов. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics Condensed Matter.

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