F. Ren

6.3k total citations
209 papers, 5.4k citations indexed

About

F. Ren is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, F. Ren has authored 209 papers receiving a total of 5.4k indexed citations (citations by other indexed papers that have themselves been cited), including 163 papers in Electrical and Electronic Engineering, 139 papers in Condensed Matter Physics and 97 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in F. Ren's work include GaN-based semiconductor devices and materials (139 papers), Semiconductor materials and devices (109 papers) and Ga2O3 and related materials (94 papers). F. Ren is often cited by papers focused on GaN-based semiconductor devices and materials (139 papers), Semiconductor materials and devices (109 papers) and Ga2O3 and related materials (94 papers). F. Ren collaborates with scholars based in United States, South Korea and Taiwan. F. Ren's co-authors include S. J. Pearton, F. Ren, C. R. Abernathy, B. S. Kang, A. H. Onstine, B. Luo, David C. Hays, D. P. Norton, G. T. Thaler and J. W. Johnson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

F. Ren

205 papers receiving 5.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F. Ren United States	41	3.5k	2.9k	2.8k	2.1k	804	209	5.4k
Travis J. Anderson United States	37	3.2k 0.9×	2.4k 0.8×	2.4k 0.8×	1.4k 0.7×	493 0.6×	260	4.7k
A. Osinsky United States	45	2.8k 0.8×	3.8k 1.3×	3.3k 1.2×	3.8k 1.8×	866 1.1×	197	6.5k
Zili Xie China	25	1.3k 0.4×	1.5k 0.5×	1.3k 0.5×	1.1k 0.5×	657 0.8×	216	2.7k
Youdou Zheng China	30	2.1k 0.6×	2.3k 0.8×	1.4k 0.5×	2.1k 1.0×	697 0.9×	249	4.1k
Suzanne E. Mohney United States	40	3.7k 1.1×	2.3k 0.8×	1.6k 0.6×	892 0.4×	1.1k 1.4×	216	5.3k
Liwen Sang Japan	31	1.7k 0.5×	2.2k 0.7×	1.2k 0.4×	1.5k 0.7×	654 0.8×	135	3.5k
Masatomo Sumiya Japan	33	2.7k 0.8×	4.0k 1.4×	2.5k 0.9×	2.9k 1.4×	689 0.9×	149	5.7k
Filippo Giannazzo Italy	46	5.0k 1.4×	3.8k 1.3×	1.3k 0.5×	1.1k 0.5×	1.1k 1.4×	344	7.4k
Jin‐Ping Ao China	29	1.6k 0.5×	1.4k 0.5×	1.2k 0.4×	855 0.4×	616 0.8×	188	3.1k
Swee Tiam Tan Singapore	40	3.4k 1.0×	3.9k 1.3×	1.1k 0.4×	1.6k 0.8×	834 1.0×	130	5.6k

Countries citing papers authored by F. Ren

Since Specialization

Citations

This map shows the geographic impact of F. Ren's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Ren with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Ren more than expected).

Fields of papers citing papers by F. Ren

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Ren. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Ren. The network helps show where F. Ren may publish in the future.

Co-authorship network of co-authors of F. Ren

This figure shows the co-authorship network connecting the top 25 collaborators of F. Ren. A scholar is included among the top collaborators of F. Ren based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Ren. F. Ren is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ren, F., et al.. (2022). Growth and characterization of (Sc2O3)x(Ga2O3)1−x by molecular beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 40(4). 3 indexed citations

Li, Jian-Sian, Xinyi Xia, Chao-Ching Chiang, et al.. (2022). Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(1). 23 indexed citations

Xian, Minghan, Chaker Fares, F. Ren, et al.. (2019). Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 37(6). 22 indexed citations

Fares, Chaker, F. Ren, E. S. Lambers, et al.. (2018). Band Offsets for Atomic Layer Deposited HfSiO₄ on (Al_0.14Ga_0.86)₂O₃. ECS Journal of Solid State Science and Technology. 7(10). P519–P523. 8 indexed citations

Fares, Chaker, F. Ren, David C. Hays, et al.. (2018). Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3. Applied Physics Letters. 113(18). 20 indexed citations

Fares, Chaker, F. Ren, David C. Hays, F. Ren, & S. J. Pearton. (2018). Effect of Deposition Method on Valence Band Offsets of SiO₂ and Al₂O₃ on (Al_0.14Ga_0.86)₂O₃. ECS Journal of Solid State Science and Technology. 8(7). Q3001–Q3006. 12 indexed citations

Hays, David C., F. Ren, E. S. Lambers, S. J. Pearton, & F. Ren. (2015). Valence and conduction band offsets in sputtered HfO2/InGaZnO4 heterostructures. Vacuum. 116. 60–64. 11 indexed citations

Douglas, E, F. Ren, V. Crăciun, et al.. (2014). Band Offsets in YSZ/InGaZnO4 Heterostructure System. Journal of Nanoscience and Nanotechnology. 14(5). 3925–3927. 6 indexed citations

Tongay, Sefaattin, Maxime G. Lemaitre, Todd Schumann, et al.. (2011). Graphene/GaN Schottky diodes: Stability at elevated temperatures. Applied Physics Letters. 99(10). 102102–102102. 111 indexed citations

10.

Wright, J.S., Wantae Lim, F. Ren, et al.. (2009). Hydrogen sensing with Pt-functionalized GaN nanowires. Sensors and Actuators B Chemical. 140(1). 196–199. 79 indexed citations

11.

Allums, K. K., Andrew Gerger, F. Ren, et al.. (2007). Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes. Journal of Electronic Materials. 36(4). 519–523. 8 indexed citations

12.

Voss, Lars F., Luc Stafford, Raghav Khanna, et al.. (2007). Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN. Journal of Electronic Materials. 36(12). 1662–1668.

13.

Polyakov, A. Y., N. B. Smirnov, F. Ren, et al.. (2007). Studies of Interface States in Sc[sub 2]O[sub 3]∕GaN, MgO∕GaN, and MgScO∕GaN structures. Journal of The Electrochemical Society. 154(2). H115–H115. 17 indexed citations

14.

Jang, Soohwan, Travis J. Anderson, F. Ren, et al.. (2006). Low specific contact resistance Ti∕Au contacts on ZnO. Applied Physics Letters. 88(12). 29 indexed citations

15.

Han, Sang Youn, F. Ren, Kwang Hyeon Baik, et al.. (2005). Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs. JSTS Journal of Semiconductor Technology and Science. 5(2). 131–135. 1 indexed citations

16.

Kang, B. S., Young-Woo Heo, Li‐Chia Tien, et al.. (2004). Hydrogen and ozone gas sensing using multiple ZnO nanorods. Applied Physics A. 80(5). 1029–1032. 85 indexed citations

17.

Moser, Neil, J. Gillespie, G. D. Via, et al.. (2003). Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters. 83(20). 4178–4180. 16 indexed citations

18.

Ip, K., Kwang Hyeon Baik, F. Ren, et al.. (2003). Stability of SiC Schottky Rectifiers to Rapid Thermal Annealing. Journal of The Electrochemical Society. 150(5). G293–G293. 5 indexed citations

19.

Pearton, S. J., C. R. Abernathy, F. Ren, et al.. (2002). Recent advances in gate dielectrics and polarised light emission from GaN. Opto-Electronics Review. 10(4). 231–236. 2 indexed citations

20.

Pearton, S. J., F. Ren, A.P. Zhang, et al.. (2001). GaN electronics for high power, high temperature applications. Materials Science and Engineering B. 82(1-3). 227–231. 92 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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