E.P. Carlson

949 total citations
37 papers, 762 citations indexed

About

E.P. Carlson is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, E.P. Carlson has authored 37 papers receiving a total of 762 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Condensed Matter Physics, 26 papers in Electrical and Electronic Engineering and 12 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in E.P. Carlson's work include GaN-based semiconductor devices and materials (26 papers), Semiconductor materials and devices (16 papers) and Silicon Carbide Semiconductor Technologies (15 papers). E.P. Carlson is often cited by papers focused on GaN-based semiconductor devices and materials (26 papers), Semiconductor materials and devices (16 papers) and Silicon Carbide Semiconductor Technologies (15 papers). E.P. Carlson collaborates with scholars based in United States, Japan and Germany. E.P. Carlson's co-authors include R. F. Davis, M. D. Bremser, T. W. Weeks, W. G. Perry, K. S. Ailey, Darren B. Thomson, Thomas Gehrke, K. J. Linthicum, Pradeep Rajagopal and Dale Batchelor and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of materials research/Pratt's guide to venture capital sources.

In The Last Decade

E.P. Carlson

36 papers receiving 731 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E.P. Carlson United States 13 626 401 301 282 216 37 762
A. S. Usikov Russia 13 638 1.0× 319 0.8× 359 1.2× 290 1.0× 95 0.4× 45 737
Satoru Nagao Japan 10 623 1.0× 340 0.8× 364 1.2× 348 1.2× 101 0.5× 21 786
T. Paskova United States 19 903 1.4× 318 0.8× 426 1.4× 444 1.6× 197 0.9× 52 992
E.V. Yakovlev Germany 15 591 0.9× 275 0.7× 235 0.8× 253 0.9× 154 0.7× 38 678
T. Prokofyeva United States 9 670 1.1× 272 0.7× 250 0.8× 247 0.9× 235 1.1× 14 739
Tae Mochizuki Japan 7 506 0.8× 200 0.5× 308 1.0× 260 0.9× 99 0.5× 14 548
Karen Charlene Cross United States 13 599 1.0× 241 0.6× 271 0.9× 322 1.1× 139 0.6× 17 715
Nobuhiko Sawaki Nobuhiko Sawaki Japan 13 537 0.9× 285 0.7× 279 0.9× 307 1.1× 125 0.6× 22 671
Masatomo Shibata Japan 11 518 0.8× 300 0.7× 258 0.9× 277 1.0× 84 0.4× 11 597
Mikolaj Amilusik Poland 16 620 1.0× 298 0.7× 378 1.3× 333 1.2× 91 0.4× 38 679

Countries citing papers authored by E.P. Carlson

Since Specialization
Citations

This map shows the geographic impact of E.P. Carlson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E.P. Carlson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E.P. Carlson more than expected).

Fields of papers citing papers by E.P. Carlson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E.P. Carlson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E.P. Carlson. The network helps show where E.P. Carlson may publish in the future.

Co-authorship network of co-authors of E.P. Carlson

This figure shows the co-authorship network connecting the top 25 collaborators of E.P. Carlson. A scholar is included among the top collaborators of E.P. Carlson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E.P. Carlson. E.P. Carlson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kizilyalli, I.C., et al.. (2022). (Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future. ECS Transactions. 109(8). 3–12. 13 indexed citations
2.
Kizilyalli, I.C. & E.P. Carlson. (2021). (Invited) Selective Area Doping in Gallium Nitride: A Retrospective of the ARPA-E PNDIODES Program. ECS Transactions. 104(7). 3–11. 3 indexed citations
3.
Cunningham, Daniel W., E.P. Carlson, Joseph S. Manser, & I.C. Kizilyalli. (2019). Impacts of Wide Band Gap Power Electronics on Photovoltaic System Design. IEEE Journal of Photovoltaics. 10(1). 213–218. 5 indexed citations
4.
Carlson, E.P., Daniel W. Cunningham, & I.C. Kizilyalli. (2018). (Invited) Wide-Bandgap Semiconductor Based Power Electronic Devices for Energy Efficiency. ECS Transactions. 86(12). 3–16. 2 indexed citations
5.
Carlson, E.P., et al.. (2018). Power Electronic Devices and Systems Based on Bulk GaN Substrates. Materials science forum. 924. 799–804. 7 indexed citations
6.
Carlson, E.P., I.C. Kizilyalli, Timothy Heidel, & Daniel W. Cunningham. (2016). (Invited) Current Topics in Electronic Devices Based on Wide Band-Gap Semiconductors for Power Applications and Energy Efficiency. ECS Transactions. 75(12). 3–9. 1 indexed citations
7.
Kandaswamy, P., Hu Liang, Ming Zhao, et al.. (2014). AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si‐CMOS fabs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 450–453. 4 indexed citations
8.
Liang, Hu, P. Kandaswamy, E.P. Carlson, et al.. (2014). Growth techniques to reduce V‐defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrate. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 533–536. 11 indexed citations
9.
Carlson, E.P., C. Basceri, Jason R. Jenny, et al.. (2006). Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates. Materials science forum. 527-529. 443–446. 3 indexed citations
10.
Loboda, Mark J., et al.. (2006). Growth of Crystalline Silicon Carbide by CVD Using Chlorosilane Gases. MRS Proceedings. 911. 3 indexed citations
11.
Gehrke, Thomas, K. J. Linthicum, Pradeep Rajagopal, et al.. (2000). Pendeo-Epitaxy<sup>TM</sup> Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition. Materials science forum. 338-342. 1491–1494. 1 indexed citations
12.
Ronning, Carsten, H. Hofsäß, M. Deicher, et al.. (1999). Photoluminescence characterization of Mg implanted GaN. MRS Proceedings. 595. 1 indexed citations
13.
Linthicum, K. J., Thomas Gehrke, Darren B. Thomson, et al.. (1999). Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 477–483. 11 indexed citations
14.
Zheleva, Tsvetanka, Scott A. Smith, Darren B. Thomson, et al.. (1999). Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 275–280. 15 indexed citations
15.
Ronning, Carsten, E.P. Carlson, Darren B. Thomson, & R. F. Davis. (1998). Optical activation of Be implanted into GaN. Applied Physics Letters. 73(12). 1622–1624. 52 indexed citations
16.
Hanser, A., Colin A. Wolden, W. G. Perry, et al.. (1998). Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates. Journal of Electronic Materials. 27(4). 238–245. 12 indexed citations
17.
Linthicum, K. J., Thomas Gehrke, Darren B. Thomson, et al.. (1998). Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques. MRS Proceedings. 537. 1 indexed citations
18.
Weeks, T. W., M. D. Bremser, K. S. Ailey, et al.. (1996). Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy. Journal of materials research/Pratt's guide to venture capital sources. 11(4). 1011–1018. 48 indexed citations
19.
Smith, Laura L., M. D. Bremser, E.P. Carlson, et al.. (1995). Ohmic Contact Formation to Doped GaN. MRS Proceedings. 395. 18 indexed citations
20.
Metze, G., et al.. (1989). 60-GHz pseudomorphic-MODFET low-noise MMIC amplifiers. IEEE Electron Device Letters. 10(4). 165–167. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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