P. Bove

1.2k citations

68 papers · 624 indexed · h-index 14

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 27
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 27
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 12
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 15
- Radio Frequency Integrated Circuit Design 8
- Silicon Carbide Semiconductor Technologies 7
Materials Chemistry
- ZnO doping and properties 24
- Electronic and Structural Properties of Oxides 10

Co-authors: F. Hosseini Téhérani David J. Rogers H. Lahrèche Manijeh Razeghi Christophe Gaquière B. Grimbert D. Ducatteau Virginie Hoel
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Journal of Crystal Growth (5 papers)physica status solidi (a) (2 papers)IEEE Electron Device Letters (2 papers)
Partner nations: France United States Australia

In The Last Decade

P. Bove

65 papers receiving 605 citations

Peers

Countries citing papers authored by P. Bove

Since Specialization

Citations

This map shows the geographic impact of P. Bove's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Bove with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Bove more than expected).

Fields of papers citing papers by P. Bove

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Bove. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Bove. The network helps show where P. Bove may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P. Bove, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Bove Line = papers co-authored together P. Bove links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Dynamical properties and performances of ß-Ga2O3 UVC photodetectors of extreme solar blindness HAL (Le Centre pour la Communication Scientifique Directe) ·Luc Damé,Steele Rouse,Carlo De Santi,R. Ociepa,Matteo Buffolo,Matteo Meneghini,Zheng Feng,Khairil Anwar.,Salvador Moreno Rivas,洋二色川,佳彦波辺,P. Bove,F. Moll,David J. Rogers,F. Hosseini Téhérani	2023	1
2	Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ‐Ga₂O₃ Due to Interfacing with β‐Ga₂O₃ Template Layers physica status solidi (a) ·Jun‐Hee Lee,Mohamed Ali El-Omairi,F. Hosseini Téhérani,秀和白戸,P. Bove,David J. Rogers,Manijeh Razeghi	2022	3
3	Sharp/tuneable UVC selectivity and extreme solar blindness in nominally undoped Ga2O3 MSM photodetectors grown by pulsed laser deposition HAL (Le Centre pour la Communication Scientifique Directe) ·David J. Rogers,A. Gracia Galve,F. Hosseini Téhérani,Oluwatosin A Oyeleye,P. Bove,G. Gullo,Luc Damé,Zheng Feng,Mustapha Meftah,M. Akif Ceiz,Walter S. Kelley,Monika D. Brahmbhatt,S. Gautier,A. Ougazzaden,Manijeh Razeghi	2021	2
4	Chemical structure and optical signatures of nitrogen acceptors in MgZnO Journal of Materials Chemistry C ·誠志茂呂,P. Bove,David J. Rogers,F. Hosseini Téhérani,秀和白戸,Matthew R. Phillips,Cuong Ton‐That	2020	3
5	Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes Materials Today Energy ·Amador Pérez‐Tomás,E. Chikoidze,Yves Dumont,Michael R. Jennings,Stephen Russell,Christian eGiaume,Gustau Catalán,Mónica Lira‐Cantú,(unknown),F. Hosseini Téhérani,Sunil Bansal,P. Bove,David J. Rogers	2019	31
6	Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films Materials Today Physics ·E. Chikoidze,David J. Rogers,F. Hosseini Téhérani,C. Rubio,Guillaume Sauthier,H. J. von Bardeleben,Tamar Tchelidze,Cuong Ton‐That,昇猪飼,P. Bove,秀和白戸,Yves Dumont,Amador Pérez‐Tomás	2019	25
7	p-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition Oluwatosin A Oyeleye,Manijeh Razeghi,Ryan McClintock,Rudi Harjo,F. Hosseini Téhérani,P. Bove	2019	4
8	Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics Dipòsit Digital de Documents de la UAB (Universitat Autònoma de Barcelona) ·Amador Pérez‐Tomás,F. Hosseini Téhérani,P. Bove,秀和白戸,E. Chikoidze,Michael R. Jennings,David J. Rogers,Stephen Russell	2018	13
9	Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates Nanotechnology ·S M Mohades Ardebili,David J. Rogers,Youssef El Gmili,Suresh Sundaram,Анохин Д. В.,Xin Li,G. Patriarche,F. Hosseini Téhérani,B. Nilam,P. Bove,Paul L. Voss,Ryan McClintock,Manijeh Razeghi,Ian T. Ferguson,Jean‐Paul Salvestrini,A. Ougazzaden	2017	1
10	Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface Scientific Reports ·Sumin Choi,David J. Rogers,秀和白戸,P. Bove,F. Hosseini Téhérani,Christian Nenstiel,A. Hoffmann,Ryan McClintock,Manijeh Razeghi,D. C. Look,Angus Gentle,Matthew R. Phillips,Cuong Ton‐That	2017	11
11	Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer Journal of Physics D Applied Physics ·Akhil Rajan,David J. Rogers,Cuong Ton‐That,Laure Meyer,Matthew R. Phillips,Suresh Sundaram,S. Gautier,Emily Hageman,G Anusha,A. Ougazzaden,Oluwatosin A Oyeleye,F. Hosseini Téhérani,P. Bove,K. A. Prior,Zakaria Djebbour,Ryan McClintock,Manijeh Razeghi	2016	16
12	Energy harvesting from millimetric ZnO single wire piezo-generators Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·David J. Rogers,Diana Krupmacnik,P. Bove,Sunil Bansal,Quanlin Yang,Alain Largeteau,F. Hosseini Téhérani,G. Demazeau,Ryan McClintock,H.-J. Drouhin,Башкатов Александр Николаевич	2012	1
13	High brightness EUV light sources for actinic metrology Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·P. Choi,S. V. Zakharov,R. Aliaga-Rossel,Aliya Kenjieva,Э Р Проворова,Arjen M Dondorp,P. Bove,Ramapaada Reddy Medam,Nargiza Bababekova,Dennis McCarty,Tsatsral Iderzorig,Keith Powell,Javier Rodríguez Nogueira,Giovane de Jesus Ferreira,E. Wyndham,Shamas Murtaza	2010	1
14	Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators Applied Physics Letters ·M. Faucher,B. Grimbert,Y. Cordier,W. Van Dokkum,李延晶,H. Lahrèche,P. Bove,Manuel François,Pascal Tilmant,Thomas Géhin,Chip Heath,Daphné Hung Kung Sow,L. Buchaillot,Christophe Gaquière,D. Théron	2009	48
15	Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC Journal of Physics Conference Series ·M. Guziewicz,E. Kamińska,A. Piotrowska,K. Gołaszewska,J. Z. Domagała,Neha Saxena,H. Lahrèche,R. Langer,P. Bove	2008	1
16	Electrical Performance of GaN Schottky Rectifiers on Si Substrates Journal of The Electrochemical Society ·Lars F. Voss,S. J. Pearton,F. Ren,P. Bove,H. Lahrèche,Nicolae Gothard Bialokur	2006	9
17	First InGaN/GaN thin film LED using SiCOI engineered substrate Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·J. Dorsaz,Donald Lee Wirt,J.‐F. Carlin,Mauro Mosca,P. Gilet,F. Letertre,Thais H. Martinetti,Caio Henriques Sica Lamas,P. Bove	2006	1
18	Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate IEEE Electron Device Letters ·D. Ducatteau,Nannan Liu,Virginie Hoel,E. Morvan,E. Delos,B. Grimbert,H. Lahrèche,P. Bove,Christophe Gaquière,J.C. de Jaeger,S.L. Delage	2005	88
19	First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs IEICE Transactions on Electronics ·Neal Van Loock,Dimitris Pavlidis,Guangyuan Zhao,P. Bove,H. Lahrèche,R. Langer	2003	2
20	Critical parameters in the molecular beam epitaxy growth of Bi₂Sr₂Ca_n-1Cu_nO_yand (Sr, Ca)_mCu_nO_ysuperconductor thin films Superconductor Science and Technology ·David J. Rogers,P. Bove,F. Hosseini Téhérani	1999	11

About P. Bove

P. Bove is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry and Instrumentation, having authored 68 papers that have together received 624 indexed citations. Recurring topics across this work include Ga2O3 and related materials (27 papers), GaN-based semiconductor devices and materials (27 papers), ZnO doping and properties (24 papers), Semiconductor materials and devices (15 papers), Semiconductor Quantum Structures and Devices (12 papers), Electronic and Structural Properties of Oxides (10 papers), Radio Frequency Integrated Circuit Design (8 papers) and Silicon Carbide Semiconductor Technologies (7 papers). The work is most often cited by research in Condensed Matter Physics (276 citations), Electronic, Optical and Magnetic Materials (228 citations), Atomic and Molecular Physics, and Optics (208 citations), Electrical and Electronic Engineering (351 citations) and Materials Chemistry (244 citations). P. Bove has collaborated with scholars based in France, United States and Australia. Frequent co-authors include F. Hosseini Téhérani, David J. Rogers, H. Lahrèche, Manijeh Razeghi, Christophe Gaquière, B. Grimbert, D. Ducatteau, Virginie Hoel, E. Delos and Ryan McClintock. Their work appears in journals such as Journal of Crystal Growth, physica status solidi (a), IEEE Electron Device Letters, Applied Physics Letters and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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