F. Omnès

1.6k total citations
27 papers, 1.3k citations indexed

About

F. Omnès is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, F. Omnès has authored 27 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Condensed Matter Physics, 14 papers in Electronic, Optical and Magnetic Materials and 12 papers in Electrical and Electronic Engineering. Recurrent topics in F. Omnès's work include GaN-based semiconductor devices and materials (24 papers), Ga2O3 and related materials (14 papers) and Semiconductor materials and devices (5 papers). F. Omnès is often cited by papers focused on GaN-based semiconductor devices and materials (24 papers), Ga2O3 and related materials (14 papers) and Semiconductor materials and devices (5 papers). F. Omnès collaborates with scholars based in France, Spain and United States. F. Omnès's co-authors include P. Gibart, E. Monroy, F. Calle, E. Muñoz, B. Beaumont, J. L. Pau, J. L. Pau, José A. Garrido, Nigel D. Browning and Yan Xin and has published in prestigious journals such as Journal of Geophysical Research Atmospheres, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

F. Omnès

26 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Omnès France 19 979 752 540 526 339 27 1.3k
C. J. Eiting United States 21 1.1k 1.1× 679 0.9× 600 1.1× 495 0.9× 312 0.9× 50 1.5k
Xu‐Qiang Shen Japan 23 1.1k 1.1× 614 0.8× 539 1.0× 668 1.3× 280 0.8× 98 1.6k
Anna Mogilatenko Germany 22 1.0k 1.1× 625 0.8× 549 1.0× 726 1.4× 426 1.3× 109 1.5k
H. M. Ng United States 20 1.3k 1.3× 738 1.0× 729 1.4× 800 1.5× 275 0.8× 47 1.8k
D.P. Norton United States 17 1.1k 1.2× 651 0.9× 364 0.7× 888 1.7× 271 0.8× 36 1.6k
F. Shahedipour‐Sandvik United States 19 1.0k 1.0× 517 0.7× 537 1.0× 533 1.0× 286 0.8× 102 1.3k
A. Kaschner Germany 18 816 0.8× 592 0.8× 699 1.3× 939 1.8× 192 0.6× 40 1.5k
Shunro Fuke Japan 22 1.3k 1.3× 977 1.3× 902 1.7× 1.2k 2.3× 339 1.0× 75 2.1k
G. Nataf France 15 810 0.8× 445 0.6× 402 0.7× 571 1.1× 159 0.5× 31 1.1k
S. X. Li United States 12 1.0k 1.0× 667 0.9× 572 1.1× 772 1.5× 290 0.9× 17 1.5k

Countries citing papers authored by F. Omnès

Since Specialization
Citations

This map shows the geographic impact of F. Omnès's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Omnès with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Omnès more than expected).

Fields of papers citing papers by F. Omnès

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Omnès. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Omnès. The network helps show where F. Omnès may publish in the future.

Co-authorship network of co-authors of F. Omnès

This figure shows the co-authorship network connecting the top 25 collaborators of F. Omnès. A scholar is included among the top collaborators of F. Omnès based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Omnès. F. Omnès is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Muret, Pierre, et al.. (2011). Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers. Diamond and Related Materials. 20(3). 285–289. 21 indexed citations
2.
Agnès, Charles, Pascal Mailley, Jean‐Charles Arnault, et al.. (2006). Surface Bio-functionalization of boron doped diamond. MRS Proceedings. 956. 2 indexed citations
3.
Omnès, F., et al.. (2002). The GaN yellow luminescence centre observed using optoelectronic modulation spectroscopy. Journal of Physics D Applied Physics. 35(7). 609–614. 4 indexed citations
4.
Muret, Pierre, E. Monroy, E. Muñoz, et al.. (2001). Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy. Materials Science and Engineering B. 82(1-3). 91–94. 18 indexed citations
5.
Xin, Yan, E. M. James, I. Arslan, et al.. (2000). Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films. Applied Physics Letters. 76(4). 466–468. 55 indexed citations
6.
Boudart, B., X. Wallart, J.C. Pesant, et al.. (2000). Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN. Journal of Electronic Materials. 29(5). 603–606. 36 indexed citations
7.
Muñoz, E., E. Monroy, F. Calle, F. Omnès, & P. Gibart. (2000). AlGaN Photodiodes For Monitoring Solar UV Radiation. Journal of Geophysical Research Atmospheres. 105(D4). 4865–4871. 20 indexed citations
8.
Monroy, E., F. Calle, J. L. Pau, et al.. (2000). Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes. Journal of Applied Physics. 88(4). 2081–2091. 89 indexed citations
9.
Braña, Alejandro F., et al.. (2000). Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements. Journal of Applied Physics. 88(2). 932–937. 45 indexed citations
10.
Yan, Xin, Nigel D. Browning, S. J. Pennycook, et al.. (1999). Atomic scale analysis of defect structures and properties in III-nitride materials by Z-contrast imaging and EELS in STEM. Journal of Electronic Materials. 28(7). 1081.
11.
Monroy, E., et al.. (1999). Low noise AlGaN metal-semiconductor-metal photodiodes. Electronics Letters. 35(3). 240–241. 10 indexed citations
12.
Dogheche, El Hadj, Denis Rémiens, & F. Omnès. (1999). Optical properties of low-pressure metalorganic vapor phase epitaxy AlxGa1−xN thin-film waveguides by prism coupling technique. Applied Physics Letters. 74(26). 3960–3962. 9 indexed citations
13.
Monroy, E., F. Calle, E. Muñoz, et al.. (1999). Schottky Barrier Ultraviolet Photodetectors on Epitaxial Lateral Overgrown GaN. physica status solidi (a). 176(1). 141–145. 14 indexed citations
14.
Monroy, E., F. Calle, E. Muñoz, et al.. (1999). Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors. Journal of Electronic Materials. 28(3). 240–245. 44 indexed citations
15.
Mierry, P. de, H. Lahrèche, S. Haffouz, et al.. (1999). Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation.. Materials Science and Engineering B. 59(1-3). 24–28. 5 indexed citations
16.
Monroy, E., F. Calle, E. Muñoz, & F. Omnès. (1999). AlGaN metal–semiconductor–metal photodiodes. Applied Physics Letters. 74(22). 3401–3403. 114 indexed citations
17.
Monroy, E., F. Calle, E. Muñoz, et al.. (1999). High UV/visible contrast photodiodes based on epitaxiallateral overgrown GaN layers. Electronics Letters. 35(17). 1488–1489. 20 indexed citations
18.
Xin, Yan, S. J. Pennycook, Nigel D. Browning, et al.. (1998). Direct observation of the core structures of threading dislocations in GaN. Applied Physics Letters. 72(21). 2680–2682. 149 indexed citations
19.
Haffouz, S., H. Lahrèche, P. Vennéguès, et al.. (1998). The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy. Applied Physics Letters. 73(9). 1278–1280. 63 indexed citations
20.
Monroy, E., F. Calle, Carlos Angulo Barrios, et al.. (1998). GaN-based solar-ultraviolet detection instrument. Applied Optics. 37(22). 5058–5058. 36 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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