B. Grimbert

1.2k citations

44 papers · 914 indexed · h-index 15

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 29
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 7
Electrical and Electronic Engineering top 5%
- Radio Frequency Integrated Circuit Design 17
- Semiconductor materials and devices 13
- Advanced MEMS and NEMS Technologies 4
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 12
- Mechanical and Optical Resonators 6
Biomedical Engineering
- Acoustic Wave Resonator Technologies 6

Co-authors: Farid Medjdoub D. Ducatteau Nathalie Rolland Christophe Gaquière E. Morvan Malek Zegaoui S.L. Delage P.A. Rolland
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Electron Device Letters (5 papers)Applied Physics Express (5 papers)Electronics Letters (3 papers)
Partner nations: France Italy United Kingdom

In The Last Decade

B. Grimbert

42 papers receiving 877 citations

Peers

Countries citing papers authored by B. Grimbert

Since Specialization

Citations

This map shows the geographic impact of B. Grimbert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Grimbert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Grimbert more than expected).

Fields of papers citing papers by B. Grimbert

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Grimbert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Grimbert. The network helps show where B. Grimbert may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B. Grimbert, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Grimbert Line = papers co-authored together B. Grimbert links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A micro-electro-mechanical accelerometer based on gallium nitride on silicon Applied Physics Letters ·Zhu Li,D. Théron,Isabelle Roch‐Jeune,Pascal Tilmant,Étienne Okada,F. Vaurette,B. Grimbert,Joff Derluyn,Stefan Degroote,Marianne Germain,M. Faucher	2023	5
2	Gallium nitride MEMS resonators: How residual stress impacts design and performances Zhu Li,D. Théron,B. Grimbert,Isabelle Roch‐Jeune,Virginie Brändli,Maurice Hakim Slaoui,Étienne Okada,M. Faucher	2016	0
3	High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure Applied Physics Express ·Farid Medjdoub,Riad Kabouche,장사녀,B. Grimbert,Malek Zegaoui,Piero Gamarra,C. Lacam,M. Tordjman,Xiaoqin Zhai	2015	23
4	GaN‐on‐silicon high electron mobility transistors with blocking voltage of 3 kV Electronics Letters ·Cristina-Elena Biță,Isabelle Roch‐Jeune,장사녀,B. Grimbert,Malek Zegaoui,Farid Medjdoub	2015	20
5	Zero-bias GaN implanted Self-Switching Diode coupled with bow-tie antenna for THz applications Justice Asare-Frempong,G. Ducournau,B. Grimbert,M. Faucher,Christophe Gaquière	2014	2
6	Toward highly scaled AlN/GaN-on-Silicon devices for millimeter wave applications International Journal of Microwave and Wireless Technologies ·Farid Medjdoub,Dlyaver E. Abibulaev,B. Grimbert,D. Ducatteau,Nathalie Rolland	2013	4
7	Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices Applied Physics Express ·Farid Medjdoub,B. Grimbert,D. Ducatteau,Nathalie Rolland	2013	34
8	First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz IEEE Electron Device Letters ·Farid Medjdoub,Malek Zegaoui,B. Grimbert,Debra Hart May,Nathalie Rolland,P.A. Rolland	2012	68
9	Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas Applied Physics Express ·Andrew Heckert,M. Faucher,B. Grimbert,Y. Cordier,Manuel François,Pascal Tilmant,Bajestani Nahid N.,Mônica Libardi,石井祝江,Christophe Gaquière,L. Buchaillot,D. Théron	2012	9
10	Wide band gap self-switching nanodevices for THz applications at room temperature European Microwave Conference ·Christophe Gaquière,G. Ducournau,Marcelo Pedroso Goulart,B. Grimbert,M. Faucher,I. Íñiguez-de-la-Torre,Sipei Xu,T. González,J. Mateos	2011	2
11	The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates Microelectronic Engineering ·M. Gassoumi,Lenore Janis,S. Saadaoui,B. Grimbert,Eric Henning,Christophe Gaquière,H. Mâaref	2010	21
12	Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators Applied Physics Letters ·M. Faucher,B. Grimbert,Y. Cordier,W. Van Dokkum,李延晶,H. Lahrèche,P. Bove,Manuel François,Pascal Tilmant,Thomas Géhin,Chip Heath,Daphné Hung Kung Sow,L. Buchaillot,Christophe Gaquière,D. Théron	2009	48
13	Non Linear RF Device Characterization in Time Domain using an Active Loadpull Large Signal Network Analyzer Conference proceedings - IEEE Instrumentation/Measurement Technology Conference ·D. Ducatteau,Daphné Hung Kung Sow,B. Grimbert,E. Morvan,D. Théron,Christophe Gaquière	2007	3
14	Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design HAL (Le Centre pour la Communication Scientifique Directe) ·Herberth Alfonso Mendieta Ramírez,Sri Ramadhan,L. Bary,Khaled W. Sadek,E. Morvan,B. Grimbert,S.L. Delage,J.C. de Jaeger,J. Graffeuil	2006	12
15	Temperature analysis of AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping HAL (Le Centre pour la Communication Scientifique Directe) ·Misara El Kady,J. Kuzmı́k,S. Bychikhin,D. Pogány,M.A. Poisson,B. Grimbert,Christophe Gaquière	2006	6
16	Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate IEEE Electron Device Letters ·D. Ducatteau,Nannan Liu,Virginie Hoel,E. Morvan,E. Delos,B. Grimbert,H. Lahrèche,P. Bove,Christophe Gaquière,J.C. de Jaeger,S.L. Delage	2005	88
17	Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT Electronics Letters ·A. Lankhorst,C. Dua,E. Morvan,B. Grimbert,M.A. di Forte-Poisson,S.L. Delage,Enrico Zanoni	2005	11
18	Power Performance Evaluation of AlGaN/GaNHEMTs through Load Pull and Pulsed I-VMeasurements Università degli Studi di Bologna ·C. Charbonniaud,由希恵佐藤,Joachim Neu,Raymond Quéré,Jean-Pierre Teyssier,Denis Barataud,Jean-Michel Nébus,T. Martin,B. Grimbert,Virginie Hoel,Gabriella Fizzotti,E. Morvan	2004	2
19	Fabrication of low‐loss 45° integrated mirrors on dielectric optical waveguides Microwave and Optical Technology Letters ·Luc Joannes,B. Grimbert,Jean‐Pierre Vilcot,Hermann Frank,D. Décoster	1995	1
20	Raman scattering characterization of processing effects on GaAs planar photoconductors Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·M. Constant,Han Kyu Yang,Colonia Carboneras,B. Grimbert	1992	0

About B. Grimbert

B. Grimbert is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Astronomy and Astrophysics, having authored 44 papers that have together received 914 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (29 papers), Radio Frequency Integrated Circuit Design (17 papers), Semiconductor materials and devices (13 papers), Semiconductor Quantum Structures and Devices (12 papers), Ga2O3 and related materials (7 papers), Acoustic Wave Resonator Technologies (6 papers), Mechanical and Optical Resonators (6 papers) and Advanced MEMS and NEMS Technologies (4 papers). The work is most often cited by research in Condensed Matter Physics (745 citations), Electronic, Optical and Magnetic Materials (288 citations), Electrical and Electronic Engineering (693 citations), Atomic and Molecular Physics, and Optics (307 citations) and Biomedical Engineering (129 citations). B. Grimbert has collaborated with scholars based in France, Italy and United Kingdom. Frequent co-authors include Farid Medjdoub, D. Ducatteau, Nathalie Rolland, Christophe Gaquière, E. Morvan, Malek Zegaoui, S.L. Delage, P.A. Rolland, T. Martin and R.S. Balmer. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Express, Electronics Letters, Applied Physics Letters and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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