Michael A. Banas

1.4k total citations
18 papers, 1.1k citations indexed

About

Michael A. Banas is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Michael A. Banas has authored 18 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Condensed Matter Physics, 11 papers in Electronic, Optical and Magnetic Materials and 8 papers in Materials Chemistry. Recurrent topics in Michael A. Banas's work include GaN-based semiconductor devices and materials (18 papers), Ga2O3 and related materials (11 papers) and ZnO doping and properties (8 papers). Michael A. Banas is often cited by papers focused on GaN-based semiconductor devices and materials (18 papers), Ga2O3 and related materials (11 papers) and ZnO doping and properties (8 papers). Michael A. Banas collaborates with scholars based in United States and Australia. Michael A. Banas's co-authors include Mary H. Crawford, G. T. Thaler, Daniel Koleske, E. Fred Schubert, Jung Han, Jeffrey J. Figiel, Martin F. Schubert, Jong Kyu Kim, Sameer Chhajed and Stephen R. Lee and has published in prestigious journals such as Applied Physics Letters, Japanese Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Michael A. Banas

17 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Michael A. Banas United States 10 1.0k 487 482 431 359 18 1.1k
S. F. LeBoeuf United States 17 978 1.0× 434 0.9× 426 0.9× 395 0.9× 508 1.4× 33 1.1k
S. Krishnankutty United States 16 1.0k 1.0× 429 0.9× 417 0.9× 576 1.3× 395 1.1× 31 1.2k
I. K. Shmagin United States 11 795 0.8× 360 0.7× 419 0.9× 389 0.9× 391 1.1× 16 1.0k
Robert M. Farrell United States 15 948 0.9× 510 1.0× 398 0.8× 344 0.8× 373 1.0× 24 1.1k
V. A. Vekshin Russia 10 963 0.9× 399 0.8× 486 1.0× 530 1.2× 220 0.6× 22 1.0k
C. A. Tran Canada 19 728 0.7× 650 1.3× 461 1.0× 351 0.8× 595 1.7× 69 1.2k
K. Manabe Japan 9 847 0.8× 278 0.6× 437 0.9× 349 0.8× 308 0.9× 12 942
A. E. Nikolaev Russia 18 900 0.9× 266 0.5× 460 1.0× 423 1.0× 458 1.3× 107 1.1k
C. J. Sun United States 21 1.4k 1.3× 516 1.1× 592 1.2× 666 1.5× 591 1.6× 38 1.6k
Amal R. Bhattarai United States 4 1.1k 1.0× 363 0.7× 329 0.7× 462 1.1× 639 1.8× 6 1.2k

Countries citing papers authored by Michael A. Banas

Since Specialization
Citations

This map shows the geographic impact of Michael A. Banas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michael A. Banas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michael A. Banas more than expected).

Fields of papers citing papers by Michael A. Banas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michael A. Banas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michael A. Banas. The network helps show where Michael A. Banas may publish in the future.

Co-authorship network of co-authors of Michael A. Banas

This figure shows the co-authorship network connecting the top 25 collaborators of Michael A. Banas. A scholar is included among the top collaborators of Michael A. Banas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Michael A. Banas. Michael A. Banas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Dai, Qi, M. Schubert, E. Fred Schubert, et al.. (2009). Internal Quantum Efficiency and Non-radiative Recombination Coefficient of GaInN/GaN Multiple Quantum Wells with Different Dislocation Densities. 6841. CTuF3–CTuF3. 1 indexed citations
2.
Miller, Mary Ann, Mary H. Crawford, Andrew A. Allerman, et al.. (2009). Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes. Journal of Electronic Materials. 38(4). 533–537. 19 indexed citations
3.
Dai, Qi, M. Schubert, E. Fred Schubert, et al.. (2009). Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities. Applied Physics Letters. 94(11). 234 indexed citations
4.
Koleske, Daniel, Corinne Ladous, Mary H. Crawford, et al.. (2008). InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition. Journal of Crystal Growth. 310(10). 2514–2519. 6 indexed citations
5.
Schubert, Martin F., Sameer Chhajed, Jong Kyu Kim, et al.. (2007). Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes. Applied Physics Letters. 91(23). 338 indexed citations
6.
Crawford, Mary H., Jung Han, Michael A. Banas, et al.. (2000). Optical Spectroscopy of Ingan Epilayers in the Low Indium Composition Regime. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 717–724. 1 indexed citations
7.
Crawford, Mary H., Jung Han, R. J. Shul, et al.. (2000). Design and Performance of Nitride-based UV LEDs. MRS Proceedings. 622. 2 indexed citations
8.
Crawford, Mary H., Jung Han, Weng W. Chow, et al.. (2000). <title>Design and performance of nitride-based UV LEDs</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3938. 13–23. 2 indexed citations
9.
Han, Jung, et al.. (2000). Metal-Organic Vapor-Phase Epitaxial Growth and Characterization of Quaternary AlGaInN. Japanese Journal of Applied Physics. 39(4S). 2372–2372. 26 indexed citations
10.
Han, Jung, Jeffrey J. Figiel, S. M. Myers, et al.. (1999). MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics. MRS Proceedings. 595. 1 indexed citations
11.
Han, Jung, Mary H. Crawford, R. J. Shul, et al.. (1999). Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 811–816. 9 indexed citations
12.
Crawford, Mary H., Jung Han, Michael A. Banas, et al.. (1999). Optical Spectroscopy of Ingan Epilayers in the Low Indium Composition Regime. MRS Proceedings. 595. 2 indexed citations
13.
Han, Jung, Mary H. Crawford, R. J. Shul, et al.. (1998). AlGaN/GaN quantum well ultraviolet light emitting diodes. Applied Physics Letters. 73(12). 1688–1690. 191 indexed citations
14.
Han, Jung, Jeffrey J. Figiel, Mary H. Crawford, et al.. (1998). OMVPE growth and gas-phase reactions of AlGaN for UV emitters. Journal of Crystal Growth. 195(1-4). 291–296. 62 indexed citations
15.
Han, Jung, Mary H. Crawford, R. J. Shul, et al.. (1998). Monitoring and Controlling of Strain During Mocvd of AlGaN for UV Optoelectronics. MRS Proceedings. 537. 2 indexed citations
16.
Perlin, P., et al.. (1996). Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes. Applied Physics Letters. 69(12). 1680–1682. 156 indexed citations
17.
Ramer, J., et al.. (1995). A Study of the Effect of Growth Rate and Annealing on GaN Buffer Layers on Sapphire. MRS Proceedings. 395. 10 indexed citations
18.
Hersee, S. D., J. Ramer, C. Kranenberg, et al.. (1995). The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire. Journal of Electronic Materials. 24(11). 1519–1523. 52 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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