M. Leroux

5.7k total citations
189 papers, 4.8k citations indexed

About

M. Leroux is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, M. Leroux has authored 189 papers receiving a total of 4.8k indexed citations (citations by other indexed papers that have themselves been cited), including 127 papers in Condensed Matter Physics, 116 papers in Atomic and Molecular Physics, and Optics and 73 papers in Electrical and Electronic Engineering. Recurrent topics in M. Leroux's work include GaN-based semiconductor devices and materials (127 papers), Semiconductor Quantum Structures and Devices (92 papers) and Ga2O3 and related materials (60 papers). M. Leroux is often cited by papers focused on GaN-based semiconductor devices and materials (127 papers), Semiconductor Quantum Structures and Devices (92 papers) and Ga2O3 and related materials (60 papers). M. Leroux collaborates with scholars based in France, Spain and Italy. M. Leroux's co-authors include J. Massies, N. Grandjean, P. Gibart, F. Sèmond, B. Beaumont, B. Damilano, P. Vennéguès, M. Laügt, P. de Mierry and S. Dalmasso and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. Leroux

187 papers receiving 4.7k citations

Peers

Countries citing papers authored by M. Leroux

Since Specialization

Citations

This map shows the geographic impact of M. Leroux's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Leroux with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Leroux more than expected).

Fields of papers citing papers by M. Leroux

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Leroux. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Leroux. The network helps show where M. Leroux may publish in the future.

Co-authorship network of co-authors of M. Leroux

This figure shows the co-authorship network connecting the top 25 collaborators of M. Leroux. A scholar is included among the top collaborators of M. Leroux based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Leroux. M. Leroux is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Multiview Symbolic Regression 2024 ·Proceedings of the Genetic and Evolutionary Computation Conference ·(unknown), Fabrício Olivetti de França, Konstantin Malanchev, Bogdan Burlacu, Émille E. O. Ishida, M. Leroux, Clément Michelin, (unknown), É. Gangler	2
2	High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials 2020 ·Journal of Applied Physics ·L. Kończewicz, Sandrine Juillaguet, E. Litwin‐Staszewska, R. Piotrzkowski, Hervé Peyre, (unknown), (unknown), M. Leroux, B. Damilano, J. Brault, Sylvie Contreras	7
3	Crystalline magnesium nitride (Mg3N2): From epitaxial growth to fundamental physical properties 2020 ·Physical Review Materials ·(unknown), H. Rotella, C. Deparis, (unknown), (unknown), P. Vennéguès, M. Leroux, J. Zúñiga‐Pérez	7
4	Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges 2019 ·Journal of Applied Physics ·J. Brault, (unknown), Thien H. Ngo, (unknown), Pierre Valvin, M. Leroux, B. Damilano, M. Korytov, Virginie Brändli, P. Vennéguès, J. Massies, Bernard Gil	19
5	Semipolar (10-11) GaN growth on silicon-on-insulator substrates: Defect reduction and meltback etching suppression 2019 ·Journal of Applied Physics ·(unknown), P. Vennéguès, J. Zúñiga‐Pérez, P. de Mierry, M. Leroux, Marc Portail, G. Feuillet	8
6	UVA and UVB light emitting diodes with Al_yGa_1−yN quantum dot active regions covering the 305–335 nm range 2018 ·Semiconductor Science and Technology ·J. Brault, (unknown), (unknown), B. Damilano, M. Leroux, Sébastien Chenot, M. Korytov, (unknown), P. Vennéguès, Jean‐Yves Duboz, J. Massies, Bernard Gil	9
7	Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission 2017 ·Journal of Applied Physics ·(unknown), J. Brault, (unknown), B. Damilano, M. Korytov, (unknown), M. Némoz, J. Massies, M. Leroux, (unknown)	13
8	Excitonic complexes in GaN/(Al,Ga)N quantum dots 2017 ·Journal of Physics Condensed Matter ·(unknown), (unknown), S. Jaziri, Guillermo Muñoz‐Matutano, M. Leroux, Juan P. Martínez‐Pastor	6
9	Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder 2016 ·Applied Physics Letters ·J. Zúñiga‐Pérez, (unknown), C. Deparis, François Réveret, Marius Grundmann, (unknown), (unknown), J. Leymarie, Sébastien Chenot, M. Leroux	11
10	Green emission from semipolar InGaN quantum wells grown on low‐defect () GaN templates fabricated on patterned r‐sapphire 2015 ·physica status solidi (b) ·P. de Mierry, (unknown), (unknown), P. Vennéguès, M. Leroux, J. Zúñiga‐Pérez	7
11	Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon 2012 ·Superlattices and Microstructures ·François Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Sèmond, M. Leroux	5
12	Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth 2010 ·Nanoscale Research Letters ·(unknown), M. Leroux, P. Vennéguès, M. Némoz, G. Nataf, (unknown)	12
13	Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms 2009 ·Solid State Communications ·François Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Sèmond, M. Leroux, J. Massies	5
14	Influence of the mirrors on the strong coupling regime in planar GaN microcavities 2008 ·Physical Review B ·François Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Sèmond, M. Leroux, J. Massies	19
15	Photoluminescence of GaN microcrystallites prepared by a new solvothermal process 2002 ·Materials Research Bulletin ·(unknown), Graziella Goglio, G. Demazeau, (unknown), Lionel Hirsch, M. Leroux	6
16	Crack-Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy 2001 ·physica status solidi (a) ·E. Feltin, B. Beaumont, (unknown), P. de Mierry, (unknown), M. Leroux, P. Gibart	33
17	Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells 1999 ·Journal of Applied Physics ·N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, J. Massies	222
18	Molecular Beam Epitaxy of GaN under N-rich Conditions using NH₃ 1999 ·Japanese Journal of Applied Physics ·N. Grandjean, M. Leroux, J. Massies, (unknown), M. Laügt	38
19	High-pressure photoluminescence of GaAs co-doped with Se and Ge 1995 ·Semiconductor Science and Technology ·M. Leroux, G. Neu, J. Leymarie, P. Gibart	1
20	GaAs cells on Si substrates: A new challenge for space photovoltaic applications 1989 ·ESASP ·A. Freundlich, M. Leroux, J. C. Grenet, (unknown), G. Neu, A. Leycuras, J. Massies, P. Gibart, C. Vèrié	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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