B. Beaumont

7.3k total citations
229 papers, 6.2k citations indexed

About

B. Beaumont is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, B. Beaumont has authored 229 papers receiving a total of 6.2k indexed citations (citations by other indexed papers that have themselves been cited), including 207 papers in Condensed Matter Physics, 112 papers in Electrical and Electronic Engineering and 106 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in B. Beaumont's work include GaN-based semiconductor devices and materials (207 papers), Ga2O3 and related materials (105 papers) and Semiconductor materials and devices (79 papers). B. Beaumont is often cited by papers focused on GaN-based semiconductor devices and materials (207 papers), Ga2O3 and related materials (105 papers) and Semiconductor materials and devices (79 papers). B. Beaumont collaborates with scholars based in France, Germany and Spain. B. Beaumont's co-authors include P. Gibart, P. Vennéguès, M. Leroux, M. Vaille, S. Haffouz, E. Monroy, F. Calle, H. Lahrèche, E. Muñoz and J. Massies and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B. Beaumont

223 papers receiving 6.0k citations

Peers

Countries citing papers authored by B. Beaumont

Since Specialization

Citations

This map shows the geographic impact of B. Beaumont's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Beaumont with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Beaumont more than expected).

Fields of papers citing papers by B. Beaumont

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Beaumont. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Beaumont. The network helps show where B. Beaumont may publish in the future.

Co-authorship network of co-authors of B. Beaumont

This figure shows the co-authorship network connecting the top 25 collaborators of B. Beaumont. A scholar is included among the top collaborators of B. Beaumont based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Beaumont. B. Beaumont is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Band-edge emission enhancement by longitudinal stress field in GaN 2008 ·Applied Physics Letters ·Duanjun Cai, Junyong Kang, P. Gibart, B. Beaumont, Takashi Sekiguchi, Shun Ito	3
2	All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN 2006 ·Journal of Crystal Growth ·T. Malinauskas, R. Aleksiejūnas, K. Jarašiūnas, B. Beaumont, P. Gibart, A. Kakanakova‐Georgieva, Erik Janzén, D. Gogova, B. Ḿonemar, M. Heuken	32
3	Electron-hole plasma mott transition and stimulated emission in GaN 2004 ·Oxford University Research Archive (ORA) (University of Oxford) ·Kwangseuk Kyhm, Robert A. Taylor, (unknown), B. Beaumont, (unknown)	1
4	Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells 2001 ·Physics of the Solid State ·D. K. Nelson, (unknown), (unknown), Bernard Gil, N. Grandjean, B. Beaumont, J. Massies, P. Gibart	2
5	Crack-Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy 2001 ·physica status solidi (a) ·E. Feltin, B. Beaumont, (unknown), P. de Mierry, (unknown), M. Leroux, P. Gibart	33
6	Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy 2001 ·Materials Science and Engineering B ·Pierre Muret, (unknown), E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart	18
7	Electrical characterization of growth-induced defects inn-GaN 2001 ·Radiation effects and defects in solids ·F.D. Auret, S. A. Goodman, G. Myburg, W.E. Meyer, J.‐M. Spaeth, P. Gibart, B. Beaumont	4
8	Comparison of Exciton-Biexciton with Bound Exciton-Biexciton Dynamics in GaN: Quantum Beats and Temperature Dependence of the Acoustic-Phonon Interaction 2001 ·physica status solidi (b) ·Kwangseuk Kyhm, Robert A. Taylor, John F. Ryan, T. Aoki, Makoto Kuwata‐Gonokami, B. Beaumont, P. Gibart	3
9	AlxGa₁-xN based UV visible-blind photodetector device applications 2000 ·Opto-Electronics Review ·F. Omnès, E. Monroy, F. Calle, E. Muñoz, B. Beaumont, P. Gibart	3
10	Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films 2000 ·Applied Physics Letters ·Yan Xin, E. M. James, I. Arslan, S. Sivananthan, Nigel D. Browning, S. J. Pennycook, F. Omnès, B. Beaumont, J. P. Faurie, P. Gibart	55
11	Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films 2000 ·Applied Physics Letters ·M. Benaı̈ssa, P. Vennéguès, B. Beaumont, P. Gibart, W. Saikaly, A. Charaı̈	21
12	Atomic scale analysis of defect structures and properties in III-nitride materials by Z-contrast imaging and EELS in STEM 1999 ·Journal of Electronic Materials ·Xin Yan, Nigel D. Browning, S. J. Pennycook, S. Sivananthan, R. Sporken, F. Omnès, B. Beaumont, P. Gibart, J. P. Faurie	0
13	Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts 1999 ·Physica B Condensed Matter ·F.D. Auret, S. A. Goodman, G. Myburg, F. K. Koschnick, J.‐M. Spaeth, B. Beaumont, P. Gibart	21
14	<title>Metal organic vapor phase epitaxy of GaN and lateral overgrowth</title> 1999 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·B. Beaumont, (unknown)	3
15	TEM Study of the Behavior of Dislocations during ELO of GaN 1999 ·physica status solidi (b) ·V. Bousquet, P. Vennéguès, B. Beaumont, M. Vaille, P. Gibart	5
16	The ITER Port Limiter System 1998 ·MPG.PuRe (Max Planck Society) ·A. Cardella, B. Beaumont, K. Ioki, P. Libeyre, G. Janeschitz, (unknown), (unknown), H.D. Pacher, R. R. Parker, R. Raffray	2
17	Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy 1998 ·MRS Internet Journal of Nitride Semiconductor Research ·B. Beaumont, M. Vaille, G. Nataf, (unknown), J. C. Guillaume, P. Vennéguès, S. Haffouz, P. Gibart	55
18	Development of Cutting and Welding Methods for Thick-Walled Stainless Steel Support and Containment Structures for ITER 1998 ·MPG.PuRe (Max Planck Society) ·L. Jones, B. Beaumont, (unknown), P. Libeyre, (unknown), (unknown), D. Maisonnier	3
19	High-Efficiency Al_0.2Ga_0.8As/Si Stacked Tandem Solar Cells Using Epitaxial Lift-Off 1994 ·Japanese Journal of Applied Physics ·K. Zahraman, Jean-Claude Guillaume, G. Nataf, B. Beaumont, (unknown), (unknown)	5
20	A four-cell photovoltaic system based on InP and GaAs 1982 ·Photovoltaic Specialists Conference ·B. Beaumont, G. Nataf, Frédéric Raymond, C. Vèrié	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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