B. Beaumont

7.3k total citations
229 papers, 6.2k citations indexed

About

B. Beaumont is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, B. Beaumont has authored 229 papers receiving a total of 6.2k indexed citations (citations by other indexed papers that have themselves been cited), including 207 papers in Condensed Matter Physics, 112 papers in Electrical and Electronic Engineering and 106 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in B. Beaumont's work include GaN-based semiconductor devices and materials (207 papers), Ga2O3 and related materials (105 papers) and Semiconductor materials and devices (79 papers). B. Beaumont is often cited by papers focused on GaN-based semiconductor devices and materials (207 papers), Ga2O3 and related materials (105 papers) and Semiconductor materials and devices (79 papers). B. Beaumont collaborates with scholars based in France, Germany and Spain. B. Beaumont's co-authors include P. Gibart, P. Vennéguès, M. Leroux, M. Vaille, S. Haffouz, E. Monroy, F. Calle, H. Lahrèche, E. Muñoz and J. Massies and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B. Beaumont

223 papers receiving 6.0k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
B. Beaumont	5.2k	2.9k	2.7k	2.6k	1.7k	229	6.2k
R. Dimitrov	6.1k 1.2×	3.1k 1.1×	2.9k 1.1×	2.4k 0.9×	2.0k 1.2×	53	6.7k
Jinwei Yang	6.5k 1.3×	3.3k 1.1×	3.2k 1.2×	2.5k 1.0×	1.8k 1.0×	231	7.3k
S. Strite	4.6k 0.9×	2.1k 0.7×	3.4k 1.3×	2.5k 1.0×	2.5k 1.4×	48	6.9k
M. Leszczyński	4.5k 0.9×	1.9k 0.6×	2.5k 0.9×	2.1k 0.8×	2.0k 1.2×	318	5.6k
S. Einfeldt	4.7k 0.9×	2.6k 0.9×	2.0k 0.7×	2.6k 1.0×	1.4k 0.8×	231	5.7k
Toshiki Makimōto	4.0k 0.8×	1.9k 0.7×	3.0k 1.1×	2.7k 1.0×	1.8k 1.0×	185	6.2k
Theeradetch Detchprohm	4.1k 0.8×	2.0k 0.7×	1.8k 0.7×	1.9k 0.8×	1.6k 0.9×	185	4.7k
Takashi Egawa	6.9k 1.3×	3.8k 1.3×	4.8k 1.8×	2.6k 1.0×	2.1k 1.2×	435	8.5k
M. Asif Khan	7.0k 1.4×	3.3k 1.1×	3.8k 1.4×	2.6k 1.0×	2.5k 1.4×	118	7.9k
Nobuhiko Sawaki	6.0k 1.2×	2.8k 1.0×	2.7k 1.0×	3.0k 1.2×	2.6k 1.5×	248	7.2k

Countries citing papers authored by B. Beaumont

Since Specialization

Citations

This map shows the geographic impact of B. Beaumont's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Beaumont with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Beaumont more than expected).

Fields of papers citing papers by B. Beaumont

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Beaumont. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Beaumont. The network helps show where B. Beaumont may publish in the future.

Co-authorship network of co-authors of B. Beaumont

This figure shows the co-authorship network connecting the top 25 collaborators of B. Beaumont. A scholar is included among the top collaborators of B. Beaumont based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Beaumont. B. Beaumont is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Cai, Duanjun, Junyong Kang, P. Gibart, et al.. (2008). Band-edge emission enhancement by longitudinal stress field in GaN. Applied Physics Letters. 93(8). 3 indexed citations

Kyhm, Kwangseuk, et al.. (2004). Electron-hole plasma mott transition and stimulated emission in GaN. Oxford University Research Archive (ORA) (University of Oxford). 1 indexed citations

Pauporté, Thierry, R. Cortès, M. Froment, B. Beaumont, & Daniel Lincot. (2002). Electrocrystallization of Epitaxial Zinc Oxide onto Gallium Nitride. Chemistry of Materials. 14(11). 4702–4708. 65 indexed citations

Kuball, M., Mohamed Benyoucef, B. Beaumont, & P. Gibart. (2001). Stress at the Coalescence Boundary of Epitaxial Lateral Overgrown GaN. physica status solidi (a). 188(2). 747–750. 4 indexed citations

Auret, F.D., S. A. Goodman, G. Myburg, et al.. (2001). Electrical characterization of growth-induced defects inn-GaN. Radiation effects and defects in solids. 156(1-4). 255–259. 4 indexed citations

Nelson, D. K., Bernard Gil, N. Grandjean, et al.. (2001). Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells. Physics of the Solid State. 43(12). 2321–2327. 2 indexed citations

Nelson, D. K., Bernard Gil, M. A. Jacobson, et al.. (2001). Impact ionization of excitons in an electric field in GaN. Journal of Physics Condensed Matter. 13(32). 7043–7052. 6 indexed citations

Feltin, E., et al.. (2001). Crack-Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy. physica status solidi (a). 188(2). 531–535. 33 indexed citations

Omnès, F., E. Monroy, F. Calle, et al.. (2000). AlxGa₁-xN based UV visible-blind photodetector device applications. Opto-Electronics Review. 43–55. 3 indexed citations

10.

Xin, Yan, E. M. James, I. Arslan, et al.. (2000). Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films. Applied Physics Letters. 76(4). 466–468. 55 indexed citations

11.

Yan, Xin, Nigel D. Browning, S. J. Pennycook, et al.. (1999). Atomic scale analysis of defect structures and properties in III-nitride materials by Z-contrast imaging and EELS in STEM. Journal of Electronic Materials. 28(7). 1081.

12.

Schenk, H. P. D., P. de Mierry, M. Laügt, et al.. (1999). Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN. Applied Physics Letters. 75(17). 2587–2589. 46 indexed citations

13.

Bousquet, V., P. Vennéguès, B. Beaumont, M. Vaille, & P. Gibart. (1999). TEM Study of the Behavior of Dislocations during ELO of GaN. physica status solidi (b). 216(1). 691–695. 5 indexed citations

14.

Leroux, M., N. Grandjean, B. Beaumont, et al.. (1999). Temperature Dependence of Photoluminescence Intensities of Undoped and Doped GaN. physica status solidi (b). 216(1). 605–608. 10 indexed citations

15.

Jones, L., et al.. (1998). Development of Cutting and Welding Methods for Thick-Walled Stainless Steel Support and Containment Structures for ITER. MPG.PuRe (Max Planck Society). 1111–1114. 3 indexed citations

16.

Cardella, A., B. Beaumont, K. Ioki, et al.. (1998). The ITER Port Limiter System. MPG.PuRe (Max Planck Society). 199–202. 2 indexed citations

17.

Beaumont, B., M. Vaille, G. Nataf, et al.. (1998). Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 3. 55 indexed citations

18.

Xin, Yan, S. J. Pennycook, Nigel D. Browning, et al.. (1998). Direct observation of the core structures of threading dislocations in GaN. Applied Physics Letters. 72(21). 2680–2682. 149 indexed citations

19.

Beaumont, B., M. Vaille, P. Lorenzini, et al.. (1996). Alternative N precursors and Mg doped GaN grown by MOVPE. MRS Internet Journal of Nitride Semiconductor Research. 1. 15 indexed citations

20.

Beaumont, B., G. Nataf, Frédéric Raymond, & C. Vèrié. (1982). A four-cell photovoltaic system based on InP and GaAs. Photovoltaic Specialists Conference. 595. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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