T. Paskova

1.2k total citations
52 papers, 992 citations indexed

About

T. Paskova is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, T. Paskova has authored 52 papers receiving a total of 992 indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Condensed Matter Physics, 27 papers in Electronic, Optical and Magnetic Materials and 25 papers in Materials Chemistry. Recurrent topics in T. Paskova's work include GaN-based semiconductor devices and materials (50 papers), Ga2O3 and related materials (27 papers) and ZnO doping and properties (24 papers). T. Paskova is often cited by papers focused on GaN-based semiconductor devices and materials (50 papers), Ga2O3 and related materials (27 papers) and ZnO doping and properties (24 papers). T. Paskova collaborates with scholars based in United States, Sweden and Czechia. T. Paskova's co-authors include K. R. Evans, T. Paskova, B. Monemar, Edward A. Preble, E. Valcheva, H. Morkoç, X. Ni, Ü. Özgür, Oleksandr Romanyuk and Kevin Udwary and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

T. Paskova

52 papers receiving 951 citations

Peers

T. Paskova
Drew Hanser United States
S. F. LeBoeuf United States
Sukho Yoon South Korea
Satoru Nagao Japan
Lindsay Hussey United States
Y.P. Hsu Taiwan
E.P. Carlson United States
Hiroaki Okagawa Japan
T. Böttcher Germany
Karen Charlene Cross United States
Drew Hanser United States
T. Paskova
Citations per year, relative to T. Paskova T. Paskova (= 1×) peers Drew Hanser

Countries citing papers authored by T. Paskova

Since Specialization
Citations

This map shows the geographic impact of T. Paskova's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Paskova with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Paskova more than expected).

Fields of papers citing papers by T. Paskova

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Paskova. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Paskova. The network helps show where T. Paskova may publish in the future.

Co-authorship network of co-authors of T. Paskova

This figure shows the co-authorship network connecting the top 25 collaborators of T. Paskova. A scholar is included among the top collaborators of T. Paskova based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Paskova. T. Paskova is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bartoš, I., Oleksandr Romanyuk, T. Paskova, & P. Jiřı́ček. (2017). Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces. Surface Science. 664. 241–245. 6 indexed citations
2.
Romanyuk, Oleksandr, P. Jiřı́ček, T. Paskova, & I. Bartoš. (2014). Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{101¯1} and GaN{202¯1} surfaces. Journal of Applied Physics. 116(10). 6 indexed citations
3.
Killat, N., Miguel Montes Bajo, T. Paskova, et al.. (2013). Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges. Applied Physics Letters. 103(19). 193507–193507. 21 indexed citations
4.
Ťapajna, M., N. Killat, T. Paskova, et al.. (2012). Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates. IEEE Electron Device Letters. 33(8). 1126–1128. 12 indexed citations
5.
Tang, Liang, M. Cervantes, Geoffrey C. Gardner, et al.. (2012). Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates. Journal of Electronic Materials. 41(5). 881–886. 16 indexed citations
6.
Zvanut, M. E., et al.. (2012). Charge transfer in semi-insulating Fe-doped GaN. Journal of Applied Physics. 112(1). 15 indexed citations
7.
8.
Lai, Kun‐Yu, T. Paskova, Virginia D. Wheeler, et al.. (2011). Indium incorporation in InGaN/GaN quantum wells grown on m‐plane GaN substrate and c‐plane sapphire. physica status solidi (a). 209(3). 559–564. 13 indexed citations
9.
Storm, David F., D. S. Katzer, David A. Deen, et al.. (2010). Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures. Solid-State Electronics. 54(11). 1470–1473. 19 indexed citations
10.
Humlı́ček, J., et al.. (2009). Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe. Journal of Crystal Growth. 312(8). 1205–1209. 9 indexed citations
11.
Paskova, T., B. Ḿonemar, T. Paskova, et al.. (2009). Optical characterization of bulk GaN substrates with c ‐, a ‐, and m ‐plane surfaces. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 5 indexed citations
12.
Lai, Kun‐Yu, T. Paskova, Virginia D. Wheeler, et al.. (2009). Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates. Journal of Applied Physics. 106(11). 12 indexed citations
13.
Ni, X., et al.. (2009). On carrier spillover in c- and m-plane InGaN light emitting diodes. Applied Physics Letters. 95(20). 37 indexed citations
14.
Paskova, T., B. Monemar, T. Paskova, et al.. (2008). Photoluminescence study of near-surface GaN/AlN superlattices. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6894. 68940G–68940G. 2 indexed citations
15.
Hanser, Drew, et al.. (2008). Fabrication and characterization of native non-polar GaN substrates. Journal of Crystal Growth. 310(17). 3953–3956. 31 indexed citations
16.
Paskova, T., Vanya Darakchieva, T. Paskova, et al.. (2005). Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers. Journal of Crystal Growth. 281(1). 55–61. 59 indexed citations
17.
Paskova, T., T. Paskova, P. O. Holtz, & B. Monemar. (2004). Polarized photoluminescence of exciton-polaritons in free-standing GaN. physica status solidi (a). 201(4). 678–685. 12 indexed citations
18.
Valcheva, E., T. Paskova, M. V. Abrashev, et al.. (2001). Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates. Journal of Applied Physics. 90(12). 6011–6016. 14 indexed citations
19.
Paskova, T., E. Valcheva, & Bo Monemar. (2001). Thick GaN Films Grown on Sapphire: Defects in Highly Mismatched Systems. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 200-202. 1–28. 4 indexed citations
20.
Paskova, T., et al.. (1996). Antimony doped GaAs: Role of the isoelectronic dopant in defect evolution. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(3). 1729–1735. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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