M. Vaille

984 total citations
25 papers, 842 citations indexed

About

M. Vaille is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, M. Vaille has authored 25 papers receiving a total of 842 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Condensed Matter Physics, 13 papers in Electronic, Optical and Magnetic Materials and 10 papers in Materials Chemistry. Recurrent topics in M. Vaille's work include GaN-based semiconductor devices and materials (21 papers), Ga2O3 and related materials (13 papers) and ZnO doping and properties (9 papers). M. Vaille is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Ga2O3 and related materials (13 papers) and ZnO doping and properties (9 papers). M. Vaille collaborates with scholars based in France, Tunisia and Netherlands. M. Vaille's co-authors include P. Gibart, B. Beaumont, P. Vennéguès, S. Haffouz, V. Bousquet, M. Laügt, G. Nataf, H. Lahrèche, B. El Jani and T. Boufaden and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Review of Scientific Instruments.

In The Last Decade

M. Vaille

25 papers receiving 812 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Vaille France 16 762 384 381 291 255 25 842
A. M. Wowchak United States 19 783 1.0× 380 1.0× 486 1.3× 482 1.7× 281 1.1× 61 990
V. Kirchner Germany 12 648 0.9× 356 0.9× 328 0.9× 237 0.8× 203 0.8× 20 746
K. Fujito Japan 15 758 1.0× 437 1.1× 398 1.0× 309 1.1× 287 1.1× 28 920
M. Kryśko Poland 19 790 1.0× 316 0.8× 323 0.8× 295 1.0× 355 1.4× 70 853
Christopher D. Yerino United States 17 649 0.9× 520 1.4× 368 1.0× 273 0.9× 271 1.1× 22 867
B. Borisov United States 15 639 0.8× 304 0.8× 424 1.1× 310 1.1× 164 0.6× 43 788
Lianshan Wang China 18 849 1.1× 540 1.4× 429 1.1× 357 1.2× 224 0.9× 90 1.1k
S. D. Lester United States 13 949 1.2× 508 1.3× 383 1.0× 506 1.7× 486 1.9× 23 1.2k
T. Hino Japan 12 706 0.9× 400 1.0× 262 0.7× 506 1.7× 510 2.0× 26 989
N. Teraguchi Japan 18 763 1.0× 605 1.6× 468 1.2× 580 2.0× 431 1.7× 47 1.2k

Countries citing papers authored by M. Vaille

Since Specialization
Citations

This map shows the geographic impact of M. Vaille's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Vaille with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Vaille more than expected).

Fields of papers citing papers by M. Vaille

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Vaille. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Vaille. The network helps show where M. Vaille may publish in the future.

Co-authorship network of co-authors of M. Vaille

This figure shows the co-authorship network connecting the top 25 collaborators of M. Vaille. A scholar is included among the top collaborators of M. Vaille based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Vaille. M. Vaille is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Feltin, E., B. Beaumont, P. Vennéguès, et al.. (2002). Epitaxial lateral overgrowth of GaN on Si (111). Journal of Applied Physics. 93(1). 182–185. 35 indexed citations
3.
Schenk, H. P. D., P. de Mierry, P. Vennéguès, et al.. (2002). In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy. Applied Physics Letters. 80(2). 174–176. 20 indexed citations
4.
Mierry, P. de, Jean-Marc Bethoux, H. P. D. Schenk, et al.. (2002). Vertical Cavity InGaN LEDs Grown by MOVPE. physica status solidi (a). 192(2). 335–340. 10 indexed citations
5.
Schenk, H. P. D., E. Feltin, M. Vaille, et al.. (2001). Acoustical and Optical Gallium Nitride Waveguides Grown on Si(111) by Metalorganic Vapor Phase Epitaxy. physica status solidi (a). 188(2). 537–541. 8 indexed citations
6.
Schenk, H. P. D., E. Feltin, O. Tottereau, et al.. (2001). Study of (Al,Ga)N Bragg Mirrors Grown on Al2O3(0001) and Si(111) by Metalorganic Vapor Phase Epitaxy. physica status solidi (a). 188(2). 899–903. 8 indexed citations
7.
Lahrèche, H., M. Leroux, M. Laügt, et al.. (2000). Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy. Journal of Applied Physics. 87(1). 577–583. 74 indexed citations
8.
Lahrèche, H., M. Vaille, P. Vennéguès, et al.. (2000). Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE). Diamond and Related Materials. 9(3-6). 452–455. 4 indexed citations
9.
Bousquet, V., P. Vennéguès, B. Beaumont, M. Vaille, & P. Gibart. (1999). TEM Study of the Behavior of Dislocations during ELO of GaN. physica status solidi (b). 216(1). 691–695. 5 indexed citations
10.
Beaumont, B., V. Bousquet, P. Vennéguès, et al.. (1999). A Two-Step Method for Epitaxial Lateral Overgrowth of GaN. physica status solidi (a). 176(1). 567–571. 37 indexed citations
11.
Nataf, G., B. Beaumont, P. Vennéguès, et al.. (1999). High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy. Materials Science and Engineering B. 59(1-3). 112–116. 2 indexed citations
12.
Beaumont, B., M. Vaille, G. Nataf, et al.. (1998). Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 3. 55 indexed citations
13.
14.
Nataf, G., et al.. (1998). Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy. Journal of Crystal Growth. 192(1-2). 73–78. 29 indexed citations
15.
Vennéguès, P., B. Beaumont, S. Haffouz, M. Vaille, & P. Gibart. (1998). Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE. Journal of Crystal Growth. 187(2). 167–177. 110 indexed citations
16.
Vennéguès, P., B. Beaumont, M. Vaille, & P. Gibart. (1997). Study of open-core dislocations in GaN films on (0001) sapphire. Applied Physics Letters. 70(18). 2434–2436. 52 indexed citations
17.
Teisseyre, H., M. Leszczyński, T. Suski, et al.. (1997). Homoepitaxial layers of gallium nitride grown by metalorganic vapour phase epitaxy. Semiconductor Science and Technology. 12(2). 240–243. 11 indexed citations
18.
Vennéguès, P., B. Beaumont, M. Vaille, & P. Gibart. (1997). Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0 0 0 1). Journal of Crystal Growth. 173(3-4). 249–259. 53 indexed citations
19.
Beaumont, B., M. Vaille, P. Lorenzini, et al.. (1996). Alternative N precursors and Mg doped GaN grown by MOVPE. MRS Internet Journal of Nitride Semiconductor Research. 1. 15 indexed citations
20.
Monteil, Y., et al.. (1986). Raman investigations of reaction process in MOVPE. Journal of Crystal Growth. 77(1-3). 172–181. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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