Tomoya Sugahara

1.0k total citations
18 papers, 900 citations indexed

About

Tomoya Sugahara is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Tomoya Sugahara has authored 18 papers receiving a total of 900 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Condensed Matter Physics, 8 papers in Atomic and Molecular Physics, and Optics and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Tomoya Sugahara's work include GaN-based semiconductor devices and materials (17 papers), Ga2O3 and related materials (8 papers) and Semiconductor Quantum Structures and Devices (6 papers). Tomoya Sugahara is often cited by papers focused on GaN-based semiconductor devices and materials (17 papers), Ga2O3 and related materials (8 papers) and Semiconductor Quantum Structures and Devices (6 papers). Tomoya Sugahara collaborates with scholars based in Japan, Russia and United Kingdom. Tomoya Sugahara's co-authors include Shiro Sakai, Yoshiki Naoi, Maosheng Hao, Hisao Satô, Katsushi Nishino, Kenji Yamashita, Satoshi Kurai, S. Tottori, Linda T. Romano and Kenji Shiojima and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

Tomoya Sugahara

18 papers receiving 865 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tomoya Sugahara Japan 12 804 376 367 345 309 18 900
R. C. Powell United States 9 759 0.9× 271 0.7× 296 0.8× 329 1.0× 397 1.3× 9 888
A. Ramakrishnan Germany 12 839 1.0× 427 1.1× 509 1.4× 458 1.3× 418 1.4× 22 1.1k
W. Van der Stricht Belgium 13 673 0.8× 322 0.9× 193 0.5× 305 0.9× 299 1.0× 29 772
Maosheng Hao Japan 8 602 0.7× 257 0.7× 255 0.7× 279 0.8× 287 0.9× 16 695
T. Hino Japan 12 706 0.9× 510 1.4× 506 1.4× 262 0.8× 400 1.3× 26 989
Ryuji Katayama Japan 14 628 0.8× 421 1.1× 357 1.0× 264 0.8× 288 0.9× 129 808
P. G. Middleton United Kingdom 10 794 1.0× 419 1.1× 234 0.6× 402 1.2× 419 1.4× 25 934
A. Sohmer Germany 11 733 0.9× 403 1.1× 182 0.5× 319 0.9× 282 0.9× 21 815
V. M. Phanse United States 10 579 0.7× 260 0.7× 323 0.9× 255 0.7× 275 0.9× 14 708
V. A. Vekshin Russia 10 963 1.2× 399 1.1× 220 0.6× 530 1.5× 486 1.6× 22 1.0k

Countries citing papers authored by Tomoya Sugahara

Since Specialization
Citations

This map shows the geographic impact of Tomoya Sugahara's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tomoya Sugahara with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tomoya Sugahara more than expected).

Fields of papers citing papers by Tomoya Sugahara

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tomoya Sugahara. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tomoya Sugahara. The network helps show where Tomoya Sugahara may publish in the future.

Co-authorship network of co-authors of Tomoya Sugahara

This figure shows the co-authorship network connecting the top 25 collaborators of Tomoya Sugahara. A scholar is included among the top collaborators of Tomoya Sugahara based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tomoya Sugahara. Tomoya Sugahara is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Kuramoto, Masaru, et al.. (2010). Enormously high-peak-power optical pulse generation from a single-transverse-mode GaInN blue-violet laser diode. Applied Physics Letters. 96(5). 18 indexed citations
2.
Sugahara, Tomoya, Jeong-Sik Lee, & Kohji Ohtsuka. (2004). Role of AlN/GaN Multilayer in Crack-Free GaN Layer Growth on 5”φ Si (111) Substrate. Japanese Journal of Applied Physics. 43(No. 12B). L1595–L1597. 27 indexed citations
3.
Satô, Hisao, Daisuke Sato, Naoki Wada, et al.. (2003). High efficiency AlGaInN-based light emitting diode in the 360–380 nm wavelength range. physica status solidi (a). 200(1). 102–105. 4 indexed citations
4.
Shiojima, Kenji, Tomoya Sugahara, & Shiro Sakai. (2000). Current transport mechanism of p-GaN Schottky contacts. Applied Physics Letters. 77(26). 4353–4355. 42 indexed citations
5.
Eliseev, Petr G., Marek Osiński, Jinhyun Lee, Tomoya Sugahara, & Shiro Sakai. (2000). Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire. Journal of Electronic Materials. 29(3). 332–341. 60 indexed citations
6.
Basak, Durga, Kenji Yamashita, Tomoya Sugahara, et al.. (1999). Selective Etching of GaN over AlxGa1-xN Using Reactive Ion Plasma of Cl2/CH4/Ar Gas Mixture. Japanese Journal of Applied Physics. 38(1R). 42–42. 7 indexed citations
7.
Youn, Doo‐Hyeb, M. Lachab, Maosheng Hao, et al.. (1999). Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics. 38(2R). 631–631. 39 indexed citations
8.
Basak, Durga, Kenji Yamashita, Tomoya Sugahara, et al.. (1999). Reactive Ion Etching of GaN and AlxGa1-xN Using Cl2/CH4/Ar Plasma. Japanese Journal of Applied Physics. 38(4S). 2646–2646. 17 indexed citations
9.
Eliseev, Petr G., Hong‐Bo Sun, Saulius Juodkazis, et al.. (1999). Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength. Japanese Journal of Applied Physics. 38(7B). L839–L839. 16 indexed citations
10.
Shiojima, Kenji, Tomoya Sugahara, & Shiro Sakai. (1999). Large Schottky barriers for Ni/p-GaN contacts. Applied Physics Letters. 74(14). 1936–1938. 56 indexed citations
11.
Yamada, Yoichi, Satoshi Kurai, Tsunemasa Taguchi, et al.. (1999). Time-resolved spectroscopy of excitonic luminescence from GaN homoepitaxial layers. Journal of Applied Physics. 86(12). 7186–7188. 10 indexed citations
12.
Sugahara, Tomoya, Hisao Satô, Maosheng Hao, et al.. (1998). Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN. Japanese Journal of Applied Physics. 37(4A). L398–L398. 405 indexed citations
13.
Sugahara, Tomoya, Maosheng Hao, Tao Wang, et al.. (1998). Role of Dislocation in InGaN Phase Separation. Japanese Journal of Applied Physics. 37(10B). L1195–L1195. 107 indexed citations
14.
Youn, Doo‐Hyeb, Maosheng Hao, Hisao Satô, et al.. (1998). Ohmic Contact to P-Type GaN. Japanese Journal of Applied Physics. 37(4R). 1768–1768. 27 indexed citations
15.
Satô, Hisao, Tomoya Sugahara, Yoshiki Naoi, & Shiro Sakai. (1998). Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics. 37(4R). 2013–2013. 40 indexed citations
16.
Satô, Hisao, Tomoya Sugahara, Maosheng Hao, et al.. (1998). Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics. 37(2R). 626–626. 7 indexed citations
17.
Sakai, Shiro, et al.. (1998). Growth of InNAs on GaAs(1 0 0) substrates by molecular-beam epitaxy. Journal of Crystal Growth. 189-190. 471–475. 11 indexed citations
18.
Tottori, S., Hisao Satô, Maosheng Hao, et al.. (1998). Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique. Japanese Journal of Applied Physics. 37(8R). 4475–4475. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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