Travis J. Anderson

5.8k total citations
260 papers, 4.7k citations indexed

About

Travis J. Anderson is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Travis J. Anderson has authored 260 papers receiving a total of 4.7k indexed citations (citations by other indexed papers that have themselves been cited), including 197 papers in Electrical and Electronic Engineering, 169 papers in Condensed Matter Physics and 93 papers in Materials Chemistry. Recurrent topics in Travis J. Anderson's work include GaN-based semiconductor devices and materials (168 papers), Semiconductor materials and devices (109 papers) and Silicon Carbide Semiconductor Technologies (73 papers). Travis J. Anderson is often cited by papers focused on GaN-based semiconductor devices and materials (168 papers), Semiconductor materials and devices (109 papers) and Silicon Carbide Semiconductor Technologies (73 papers). Travis J. Anderson collaborates with scholars based in United States, Spain and Germany. Travis J. Anderson's co-authors include Karl D. Hobart, Marko J. Tadjer, Jennifer K. Hite, Andrew D. Koehler, Charles R. Eddy, Francis J. Kub, Boris N. Feigelson, Jordan D. Greenlee, Fritz J. Kub and Michael A. Mastro and has published in prestigious journals such as Nature, SHILAP Revista de lepidopterología and ACS Nano.

In The Last Decade

Travis J. Anderson

246 papers receiving 4.6k citations

Peers

Countries citing papers authored by Travis J. Anderson

Since Specialization

Citations

This map shows the geographic impact of Travis J. Anderson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Travis J. Anderson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Travis J. Anderson more than expected).

Fields of papers citing papers by Travis J. Anderson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Travis J. Anderson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Travis J. Anderson. The network helps show where Travis J. Anderson may publish in the future.

Co-authorship network of co-authors of Travis J. Anderson

This figure shows the co-authorship network connecting the top 25 collaborators of Travis J. Anderson. A scholar is included among the top collaborators of Travis J. Anderson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Travis J. Anderson. Travis J. Anderson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Heavy Ion-Induced Single-Event Leakage Current and Burnout in Homojunction GaN p-i-n Diodes 2025 ·IEEE Transactions on Nuclear Science ·(unknown), (unknown), James R. McBride, (unknown), (unknown), (unknown), Travis J. Anderson, (unknown), Robert Kaplar, Michael W. McCurdy, Robert A. Reed, Sokrates T. Pantelides, Mona A. Ebrish, Daniel M. Fleetwood, Joshua D. Caldwell, Ronald D. Schrimpf	2
2	Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design 2024 ·Applied Physics Letters ·(unknown), (unknown), (unknown), Michael W. McCurdy, Travis J. Anderson, Alan G. Jacobs, Robert Kaplar, Dennis R. Ball, En Xia Zhang, Sokrates T. Pantelides, Robert A. Reed, Mona A. Ebrish, Daniel M. Fleetwood, Joshua D. Caldwell, Ronald D. Schrimpf	8
3	Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN 2024 ·physica status solidi (a) ·Alan G. Jacobs, Boris N. Feigelson, James Spencer Lundh, Joseph Spencer, Jaime A. Freitas, Brendan Gunning, Robert Kaplar, Yuhao Zhang, Marko J. Tadjer, Karl D. Hobart, Travis J. Anderson	1
4	2.3 kV GaN Super-Heterojunction FET for Cryogenic Power Switching 2024 ·(unknown), (unknown), (unknown), (unknown), (unknown), (unknown), James Spencer Lundh, Karl D. Hobart, Travis J. Anderson, Rongming Chu	0
5	Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability 2024 ·IEEE Electron Device Letters ·James Spencer Lundh, Alan G. Jacobs, (unknown), (unknown), Daniel G. Georgiev, Andrew D. Koehler, Raghav Khanna, Marko J. Tadjer, Karl D. Hobart, Travis J. Anderson	2
6	Improving vertical GaN p–n diode performance with room temperature defect mitigation 2023 ·Semiconductor Science and Technology ·(unknown), James C. Gallagher, Alan G. Jacobs, Karl D. Hobart, Travis J. Anderson, Brendan Gunning, Robert Kaplar, Douglas E. Wolfe, Aman Haque	1
7	Methodology and implementation of a tunable deep-ultraviolet laser source for photoemission electron microscopy 2023 ·Ultramicroscopy ·Andrew Winchester, Travis J. Anderson, Jennifer K. Hite, Randolph E. Elmquist, Sujitra Pookpanratana	3
8	A Simple Edge Termination Design for Vertical GaN P-N Diodes 2022 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), (unknown), (unknown), Daniel G. Georgiev, Andrew D. Koehler, Travis J. Anderson, James C. Gallagher, Geoffrey M. Foster, Alan G. Jacobs, Mona A. Ebrish, Brendan Gunning, Robert Kaplar, Karl D. Hobart, Raghav Khanna	17
9	Investigation of the Reverse Leakage Behavior and Substrate Defects in Vertical GaN Schottky and PIN Diodes 2022 ·ECS Journal of Solid State Science and Technology ·Yekan Wang, Michael E. Liao, Kenny Huynh, (unknown), James C. Gallagher, Travis J. Anderson, Xianrong Huang, Michael Wojcik, Mark S. Goorsky	3
10	Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations 2022 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), Daniel G. Georgiev, (unknown), Andrew D. Koehler, Karl D. Hobart, Travis J. Anderson, Adrian Ildefonso, Raghav Khanna	11
11	Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments 2020 ·Applied Physics Letters ·Geoffrey M. Foster, Andrew D. Koehler, Mona A. Ebrish, James C. Gallagher, Travis J. Anderson, Brenton A. Noesges, L. J. Brillson, Brendan Gunning, Karl D. Hobart, Francis J. Kub	21
12	A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes 2020 ·IEEE Transactions on Semiconductor Manufacturing ·Mona A. Ebrish, Travis J. Anderson, Andrew D. Koehler, Geoffrey M. Foster, James C. Gallagher, Robert Kaplar, Brendan Gunning, Karl D. Hobart	5
13	Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices 2019 ·ECS Journal of Solid State Science and Technology ·Yekan Wang, Tingyu Bai, Chao Li, Marko J. Tadjer, Travis J. Anderson, Jennifer K. Hite, Michael A. Mastro, Charles R. Eddy, Karl D. Hobart, Boris N. Feigelson, Mark S. Goorsky	8
14	Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation 2019 ·IEEE Transactions on Semiconductor Manufacturing ·James C. Gallagher, Francis J. Kub, Travis J. Anderson, Andrew D. Koehler, Geoffrey M. Foster, Alan G. Jacobs, Boris N. Feigelson, Michael A. Mastro, Jennifer K. Hite, Karl D. Hobart	5
15	GaN-On-Diamond HEMT Technology With T_AVG = 176°C at P_DC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging 2019 ·IEEE Electron Device Letters ·Marko J. Tadjer, Travis J. Anderson, Mario G. Ancona, Peter E. Raad, Pavel L. Komarov, Tingyu Bai, James C. Gallagher, Andrew D. Koehler, Mark S. Goorsky, Daniel Francis, Karl D. Hobart, Fritz J. Kub	75
16	Lateral GaN JFET Devices on Large Area Engineered Substrates 2019 ·ECS Journal of Solid State Science and Technology ·Travis J. Anderson, Lunet E. Luna, Özgür Aktaş, Geoffrey M. Foster, Andrew D. Koehler, Marko J. Tadjer, Michael A. Mastro, Karl D. Hobart, V. A. Odnoblyudov, C. Basceri, Francis J. Kub	2
17	Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance 2018 ·IEEE Journal of the Electron Devices Society ·Marko J. Tadjer, Fritz J. Kub, Peter E. Raad, Pavel L. Komarov, Karl D. Hobart, Tatyana I. Feygelson, Andrew D. Koehler, Travis J. Anderson, Anindya Nath, Bradford B. Pate	15
18	Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation 2017 ·IEEE Electron Device Letters ·Yuhao Zhang, Zhihong Liu, Marko J. Tadjer, Min Sun, Daniel Piedra, Christopher Hatem, Travis J. Anderson, Lunet E. Luna, Anindya Nath, Andrew D. Koehler, Hironori Okumura, Jie Hu, Xu Zhang, Xiang Gao, Boris N. Feigelson, Karl D. Hobart, Tomás Palacios	148
19	Correlation of the Spatial Variation of Single-Event Transient Sensitivity With Thermoreflectance Thermography in ${\text {Al}}_{x} {\text {Ga}}_{1-x}$ N/GaN HEMTs 2017 ·IEEE Transactions on Nuclear Science ·Ani Khachatrian, Nicolas J.-H. Roche, Laura B. Ruppalt, James G. Champlain, S. Büchner, Andrew D. Koehler, Travis J. Anderson, Karl D. Hobart, Jeffrey H. Warner, Dale McMorrow	5
20	Modeling and simulation of a CuGaSe/sub 2//Cu(In/sub 1-x/,Ga/sub x/)Se/sub 2/ tandem solar cell 2003 ·3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of ·(unknown), Shuguang Li, Chia‐Hua Huang, Travis J. Anderson, O.D. Crisalle	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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