F. Ren

46.7k total citations · 6 hit papers
1.4k papers, 38.9k citations indexed

About

F. Ren is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, F. Ren has authored 1.4k papers receiving a total of 38.9k indexed citations (citations by other indexed papers that have themselves been cited), including 995 papers in Electrical and Electronic Engineering, 674 papers in Condensed Matter Physics and 520 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in F. Ren's work include GaN-based semiconductor devices and materials (673 papers), Semiconductor materials and devices (628 papers) and Ga2O3 and related materials (491 papers). F. Ren is often cited by papers focused on GaN-based semiconductor devices and materials (673 papers), Semiconductor materials and devices (628 papers) and Ga2O3 and related materials (491 papers). F. Ren collaborates with scholars based in United States, South Korea and Taiwan. F. Ren's co-authors include S. J. Pearton, Jihyun Kim, D. P. Norton, C. R. Abernathy, Jiancheng Yang, R. J. Shul, Marko J. Tadjer, B. S. Kang, F. Ren and Michael A. Mastro and has published in prestigious journals such as Advanced Materials, SHILAP Revista de lepidopterología and Nano Letters.

In The Last Decade

F. Ren

1.4k papers receiving 37.8k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

A review of Ga2O3 materials, processing, and devices

2018 2.3k citations S. J. Pearton, Jiancheng Yang et al. Applied Physics Reviews profile →
GaN: Processing, defects, and devices

1999 1.5k citations S. J. Pearton, F. Ren et al. Journal of Applied Physics profile →
Wide band gap ferromagnetic semiconductors and oxides

2002 892 citations S. J. Pearton, F. Ren et al. Journal of Applied Physics profile →
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

2018 512 citations S. J. Pearton, F. Ren et al. Journal of Applied Physics profile →
ZnO nanowire growth and devices

2004 488 citations F. Ren, S. J. Pearton et al. profile →
Hydrogen-selective sensing at room temperature with ZnO nanorods

2005 479 citations F. Ren, S. J. Pearton et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F. Ren United States	85	22.3k	21.1k	16.7k	14.3k	5.8k	1.4k	38.9k
S. J. Pearton United States	104	39.8k 1.8×	35.4k 1.7×	24.4k 1.5×	22.8k 1.6×	14.2k 2.5×	2.2k	66.1k
M. Stutzmann Germany	79	16.1k 0.7×	16.2k 0.8×	6.1k 0.4×	11.4k 0.8×	6.7k 1.2×	676	28.6k
Lars Hultman Sweden	106	24.2k 1.1×	53.4k 2.5×	8.5k 0.5×	4.9k 0.3×	3.0k 0.5×	814	67.3k
Alexander A. Balandin United States	85	12.7k 0.6×	35.4k 1.7×	5.4k 0.3×	2.2k 0.2×	5.1k 0.9×	416	43.8k
Dmitri Golberg Japan	135	24.5k 1.1×	47.4k 2.3×	12.8k 0.8×	1.7k 0.1×	2.8k 0.5×	805	63.5k
Li–Chyong Chen Taiwan	72	9.2k 0.4×	13.1k 0.6×	6.0k 0.4×	2.6k 0.2×	1.6k 0.3×	528	21.7k
Junqiao Wu United States	82	13.9k 0.6×	19.3k 0.9×	7.0k 0.4×	6.2k 0.4×	6.1k 1.1×	276	30.2k
Dapeng Yu China	86	13.6k 0.6×	20.1k 1.0×	5.5k 0.3×	1.8k 0.1×	5.5k 1.0×	502	27.5k
U. Gösele Germany	99	22.4k 1.0×	26.7k 1.3×	5.2k 0.3×	1.5k 0.1×	12.1k 2.1×	647	43.2k
Yuichi Ikuhara Japan	80	11.8k 0.5×	17.5k 0.8×	6.1k 0.4×	2.2k 0.2×	2.5k 0.4×	932	29.5k

Countries citing papers authored by F. Ren

Since Specialization

Citations

This map shows the geographic impact of F. Ren's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Ren with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Ren more than expected).

Fields of papers citing papers by F. Ren

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Ren. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Ren. The network helps show where F. Ren may publish in the future.

Co-authorship network of co-authors of F. Ren

This figure shows the co-authorship network connecting the top 25 collaborators of F. Ren. A scholar is included among the top collaborators of F. Ren based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Ren. F. Ren is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Chiang, Chao-Ching, et al.. (2025). Dry Etching of Cr₂MnO₄ Thin Films for Forming p-n Junctions with β-Ga₂O₃. ECS Journal of Solid State Science and Technology. 14(7). 73001–73001.

Chiang, Chao-Ching, et al.. (2025). Fabrication of TiO2 Nanotube Arrays by Progressive Anodization of Ti Thin Film on Insulated Substrates. Materials. 18(6). 1219–1219. 1 indexed citations

Chernyak, Leonid, Jian-Sian Li, Chao-Ching Chiang, et al.. (2025). Zero-bias photo-induced charge separation using built-in electric field at p-NiO/n-Ga2O3 heterojunction interface. Journal of Applied Physics. 138(20).

Pearton, S. J., et al.. (2024). Van der Waals epitaxy and beyond for monolithic 3D integration. 2D Materials. 12(2). 22003–22003. 2 indexed citations

Xia, Xinyi, Sergei P. Stepanoff, Aman Haque, et al.. (2023). 60Co γ-irradiation of AlGaN UVC light-emitting diodes. Optical Materials. 142. 114015–114015. 2 indexed citations

Li, Jian-Sian, Chao-Ching Chiang, Xinyi Xia, et al.. (2023). Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage >8 kV. Crystals. 13(6). 886–886. 20 indexed citations

Rasel, Md Abu Jafar, Sergei P. Stepanoff, Aman Haque, et al.. (2022). Gamma radiation on gallium nitride high electron mobility transistors at ON, OFF, and prestressed conditions. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 40(6). 5 indexed citations

Xia, Xinyi, Chaker Fares, Aman Haque, et al.. (2022). Band Alignment of Al ₂ O ₃ on α -(Al _x Ga _1-x ) ₂ O ₃. ECS Journal of Solid State Science and Technology. 11(2). 25006–25006. 4 indexed citations

Li, Jian-Sian, Chao-Ching Chiang, Xinyi Xia, et al.. (2022). Dynamic Switching of 1.9 A/1.76 kV Forward Current NiO/ β -Ga ₂ O ₃ Rectifiers. ECS Journal of Solid State Science and Technology. 11(10). 105003–105003. 18 indexed citations

10.

Chiang, Chao-Ching, Xinyi Xia, Jian-Sian Li, F. Ren, & S. J. Pearton. (2022). Threshold Ion Energies and Cleaning of Etch Residues During Inductively Coupled Etching of NiO/Ga ₂ O ₃ in BCl ₃. ECS Journal of Solid State Science and Technology. 11(11). 115005–115005. 5 indexed citations

11.

Xia, Xinyi, et al.. (2022). Ga+-focused ion beam damage in n-type Ga2O3. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 40(5). 4 indexed citations

12.

Modak, Sushrut, Leonid Chernyak, Alfons Schulte, et al.. (2021). Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β -Ga2O3 Schottky rectifiers. Applied Physics Letters. 118(20). 13 indexed citations

13.

Xia, Xinyi, Minghan Xian, Patrick H. Carey, et al.. (2021). Vertical β -Ga ₂ O ₃ Schottky rectifiers with 750 V reverse breakdown voltage at 600 K. Journal of Physics D Applied Physics. 54(30). 305103–305103. 16 indexed citations

14.

Xian, Minghan, et al.. (2019). Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 37(6). 20 indexed citations

15.

Yang, Jiancheng, Chaker Fares, F. Ren, et al.. (2019). Switching Behavior and Forward Bias Degradation of 700V, 0.2A, β-Ga₂O₃Vertical Geometry Rectifiers. ECS Journal of Solid State Science and Technology. 8(7). Q3028–Q3033. 26 indexed citations

16.

Polyakov, A. Y., I. Shchemerov, А. В. Черных, et al.. (2019). Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions. Journal of Applied Physics. 125(9). 3 indexed citations

17.

Polyakov, A. Y., N. B. Smirnov, Ivan Shchemerov, et al.. (2018). Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3. Applied Physics Letters. 113(9). 91 indexed citations

18.

Pearton, S. J., Jiancheng Yang, F. Ren, et al.. (2018). A review of Ga2O3 materials, processing, and devices. Applied Physics Reviews. 5(1). 2335 indexed citations breakdown →

19.

Jung, Sunwoo, Kwang Hyeon Baik, F. Ren, S. J. Pearton, & Soohwan Jang. (2018). AlGaN/GaN Heterostructure Based Schottky Diode Sensors with ZnO Nanorods for Environmental Ammonia Monitoring Applications. ECS Journal of Solid State Science and Technology. 7(7). Q3020–Q3024. 21 indexed citations

20.

Oh, Sooyeoun, Janghyuk Kim, F. Ren, S. J. Pearton, & Jihyun Kim. (2016). Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity. Journal of Materials Chemistry C. 4(39). 9245–9250. 135 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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