A. Soltani

2.2k total citations
93 papers, 1.5k citations indexed

About

A. Soltani is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Soltani has authored 93 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 64 papers in Electrical and Electronic Engineering, 57 papers in Condensed Matter Physics and 28 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Soltani's work include GaN-based semiconductor devices and materials (57 papers), Semiconductor materials and devices (32 papers) and Ga2O3 and related materials (16 papers). A. Soltani is often cited by papers focused on GaN-based semiconductor devices and materials (57 papers), Semiconductor materials and devices (32 papers) and Ga2O3 and related materials (16 papers). A. Soltani collaborates with scholars based in France, Canada and Belgium. A. Soltani's co-authors include V. Mortet, Jean-Claude Gerbedoen, Michel Rousseau, Abdelkrim Talbi, B. Benbakhti, Ken Haenen, A. BenMoussa, A. Ougazzaden, J.C. de Jaeger and K. Kálna and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. Soltani

89 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Soltani France 25 825 696 559 387 363 93 1.5k
R. Beresford United States 24 1.4k 1.7× 834 1.2× 871 1.6× 420 1.1× 932 2.6× 78 2.3k
T. S. Ravi United States 18 576 0.7× 711 1.0× 768 1.4× 293 0.8× 588 1.6× 66 1.5k
A. Ougazzaden France 29 2.0k 2.4× 1.1k 1.7× 998 1.8× 503 1.3× 1.3k 3.6× 230 3.2k
E. Abramof Brazil 23 762 0.9× 397 0.6× 1.1k 2.1× 266 0.7× 910 2.5× 152 1.8k
Ludovic Largeau France 26 914 1.1× 365 0.5× 1.1k 1.9× 443 1.1× 649 1.8× 108 1.8k
H. Helava Russia 20 487 0.6× 1.0k 1.5× 583 1.0× 606 1.6× 262 0.7× 79 1.3k
N. Dietz United States 22 826 1.0× 770 1.1× 803 1.4× 477 1.2× 595 1.6× 129 1.7k
R.S. Balmer United Kingdom 21 1.4k 1.7× 1.5k 2.2× 691 1.2× 401 1.0× 515 1.4× 53 1.9k
Iain Thayne United Kingdom 23 1.5k 1.8× 352 0.5× 407 0.7× 184 0.5× 751 2.1× 174 1.8k
Ph. Niedermann Switzerland 17 498 0.6× 253 0.4× 306 0.5× 117 0.3× 747 2.1× 56 1.2k

Countries citing papers authored by A. Soltani

Since Specialization
Citations

This map shows the geographic impact of A. Soltani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Soltani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Soltani more than expected).

Fields of papers citing papers by A. Soltani

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Soltani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Soltani. The network helps show where A. Soltani may publish in the future.

Co-authorship network of co-authors of A. Soltani

This figure shows the co-authorship network connecting the top 25 collaborators of A. Soltani. A scholar is included among the top collaborators of A. Soltani based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Soltani. A. Soltani is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Soltani, A., et al.. (2025). Towards a low-loss aluminum nitride on insulator (AlNOI) platform for integrated photonics. Optical Materials Express. 15(4). 752–752.
2.
Frayssinet, Éric, F. Lecourt, N. Defrance, et al.. (2020). New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor. Semiconductor Science and Technology. 36(3). 34002–34002. 2 indexed citations
3.
Benbakhti, B., et al.. (2020). A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 67(5). 1924–1930. 14 indexed citations
4.
Myronov, M., A. Soltani, G. Patriarche, et al.. (2019). Uprooting defects to enable high-performance III–V optoelectronic devices on silicon. Nature Communications. 10(1). 4322–4322. 51 indexed citations
5.
Voss, Paul L., Suresh Sundaram, Yacine Halfaya, et al.. (2019). Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature. SPIRE - Sciences Po Institutional REpository. 1–4. 1 indexed citations
6.
Soltani, A., et al.. (2018). A Hydrogen Plasma Treatment for Soft and Selective Silicon Nitride Etching. physica status solidi (a). 215(9). 10 indexed citations
7.
Davydova, Marina, Andrew Taylor, Pavel Hubı́k, et al.. (2018). Characteristics of zirconium and niobium contacts on boron-doped diamond. Diamond and Related Materials. 83. 184–189. 12 indexed citations
8.
Kálna, K., et al.. (2017). Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices. 37–40. 4 indexed citations
9.
Benbakhti, B., et al.. (2017). Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate. ECS Journal of Solid State Science and Technology. 6(11). S3040–S3043. 8 indexed citations
10.
Jaouad, Abdelatif, et al.. (2017). AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process. IEEE Electron Device Letters. 38(6). 779–782. 20 indexed citations
11.
Atourki, Lahoucine, K. Abouabassi, A. Soltani, et al.. (2017). Effects of Na2SO4 on the optical and structural properties of Cu2ZnSnS4 thin films synthesized using co-electrodeposition technique. Optical Materials. 75. 471–482. 17 indexed citations
12.
Soltani, A., et al.. (2017). Thermal Impedance Extraction From Electrical Measurements for Double‐Ended Gate Transistors. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 14(11). 3 indexed citations
13.
Halfaya, Yacine, A. Soltani, Suresh Sundaram, et al.. (2016). Experimental Study and Device Design of NO, NO2, and NH3Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT. IEEE Sensors Journal. 16(18). 6828–6838. 42 indexed citations
14.
Boudouti, El Houssaine El, A. Soltani, Abdelkrim Talbi, et al.. (2014). Electromagnetically induced absorption in detuned stub waveguides: a simple analytical and experimental model. Journal of Physics Condensed Matter. 26(50). 505901–505901. 30 indexed citations
15.
Soltani, A., Abdelkrim Talbi, Jean-Claude Gerbedoen, et al.. (2014). Theoretical and experimental investigation of Lamb waves characteristics in AlN/TiN and AlN/TiN/NCD composite membranes. HAL (Le Centre pour la Communication Scientifique Directe). 133. 2047–2050. 1 indexed citations
16.
Boudouti, El Houssaine El, et al.. (2013). Theoretical and experimental evidence of Fano-like resonances in simple monomode photonic circuits. Journal of Applied Physics. 113(16). 31 indexed citations
17.
Asadpour, Seyyed Hossein, Mostafa Sahrai, A. Soltani, & Hamid Reza Hamedi. (2011). Enhanced Kerr nonlinearity via quantum interference from spontaneous emission. Physics Letters A. 376(3). 147–152. 52 indexed citations
18.
Gautier, S., G. Patriarche, T. Moudakir, et al.. (2010). Deep structural analysis of novel BGaN material layers grown by MOVPE. Journal of Crystal Growth. 315(1). 288–291. 33 indexed citations
19.
Gerbedoen, Jean-Claude, et al.. (2010). AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz. IEEE Transactions on Electron Devices. 57(7). 1497–1503. 24 indexed citations
20.
Tiercelin, Nicolas, Abdelkrim Talbi, Vladimir Preobrazhensky, et al.. (2008). Magnetoelectric effect near spin reorientation transition in giant magnetostrictive-aluminum nitride thin film structure. Applied Physics Letters. 93(16). 33 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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