T. Prokofyeva

956 citations

14 papers · 739 indexed · h-index 9

Condensed Matter Physics top 2%
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials top 10%
Materials Chemistry
Mechanics of Materials top 5%

Co-authors: M. Holtz H. Temkin S. A. Nikishin M. Seon N. N. Faleev Stefan Zollner Vladimir G. Antipov G. A. Seryogin
Topics: GaN-based semiconductor devices and materials (13 papers)Metal and Thin Film Mechanics (7 papers)Semiconductor materials and devices (6 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Mechanics of Materials
Journals: Physical review. B, Condensed matter Applied Physics Letters Journal of Applied Physics
Partner nations: United States Russia Mexico

In The Last Decade

T. Prokofyeva

14 papers receiving 724 citations

Peers

Countries citing papers authored by T. Prokofyeva

Since Specialization

Citations

This map shows the geographic impact of T. Prokofyeva's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Prokofyeva with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Prokofyeva more than expected).

Fields of papers citing papers by T. Prokofyeva

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Prokofyeva. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Prokofyeva. The network helps show where T. Prokofyeva may publish in the future.

Co-authorship network of co-authors of T. Prokofyeva

This figure shows the co-authorship network connecting the top 25 collaborators of T. Prokofyeva. A scholar is included among the top collaborators of T. Prokofyeva based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Prokofyeva. T. Prokofyeva is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

#	Work	Indexed citations
1	Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia 2002 ·Journal of Applied Physics ·A. S. Zubrilov,S. A. Nikishin,G. Kipshidze,V. Kuryatkov,H. Temkin,T. Prokofyeva,M. Holtz	17
2	Gas source molecular beam epitaxy of high quality AlxGa1−xN (0⩽x⩽1) on Si(111) 2001 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. A. Nikishin,G. Kipshidze,V. Kuryatkov,Kiho Choi,(unknown),Luis Grave de Peralta,A. S. Zubrilov,(unknown),(unknown),T. Prokofyeva,M. Holtz,R. Asomoza,Yu. A. Kudryavtsev,H. Temkin	18
3	Vibrational properties of AlN grown on (111)-oriented silicon 2001 ·Physical review. B, Condensed matter ·T. Prokofyeva,M. Seon,(unknown),M. Holtz,S. A. Nikishin,N. N. Faleev,H. Temkin,Stefan Zollner	230
4	Micro-Raman Scattering From Hexagonal GaN, AlN, and Al_xGa_1-xN Grown on (111) Oriented Silicon: Stress Mapping of Cracks 2001 ·MRS Proceedings ·(unknown),T. Prokofyeva,M. Seon,M. Holtz,Kiho Choi,Ji-Hoon Yun,S. A. Nikishin,H. Temkin	2
5	Composition dependence of the optical phonon energies in hexagonal AlxGa1−xN 2001 ·Journal of Applied Physics ·M. Holtz,T. Prokofyeva,M. Seon,(unknown),(unknown),Stephen L. Williams,S. A. Nikishin,(unknown),H. Temkin	57
6	High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy 2001 ·Journal of Electronic Materials ·G. Kipshidze,S. A. Nikishin,V. Kuryatkov,Kiho Choi,(unknown),T. Prokofyeva,M. Holtz,H. Temkin,Karl D. Hobart,Fritz J. Kub,M. Fatemi	8
7	Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire 2000 ·MRS Proceedings ·S. A. Nikishin,G. Kipshidze,V. Kuryatkov,A. S. Zubrilov,Kiho Choi,(unknown),Luis Grave de Peralta,T. Prokofyeva,M. Holtz,R. Asomoza,Yu. A. Kudryavtsev,H. Temkin	2
8	Selective growth of high quality GaN on Si(111) substrates 2000 ·Applied Physics Letters ·M. Seon,T. Prokofyeva,M. Holtz,S. A. Nikishin,N. N. Faleev,H. Temkin	45
9	High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 2000 ·MRS Internet Journal of Nitride Semiconductor Research ·S. A. Nikishin,N. N. Faleev,Vladimir G. Antipov,S. Francoeur,Luis Grave de Peralta,G. A. Seryogin,M. Holtz,T. Prokofyeva,S. N. G. Chu,A. S. Zubrilov,V.A. Elyukhin,(unknown),Andrei V. Nikolaev,(unknown),V. Dmitriev,H. Temkin	2
10	High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia 1999 ·Applied Physics Letters ·S. A. Nikishin,Vladimir G. Antipov,S. Francoeur,N. N. Faleev,G. A. Seryogin,V.A. Elyukhin,H. Temkin,T. Prokofyeva,M. Holtz,A. Konkar,Stefan Zollner	58
11	High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 1999 ·MRS Proceedings ·S. A. Nikishin,N. N. Faleev,Vladimir G. Antipov,S. Francoeur,Luis Grave de Peralta,G. A. Seryogin,M. Holtz,T. Prokofyeva,S. N. G. Chu,A. S. Zubrilov,V.A. Elyukhin,(unknown),Andrei V. Nikolaev,(unknown),V. Dmitriev,H. Temkin	1
12	Micro-Raman imaging of GaN hexagonal island structures 1999 ·Applied Physics Letters ·M. Holtz,M. Seon,T. Prokofyeva,H. Temkin,R. Singh,(unknown),T. D. Moustakas	35
13	High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia 1999 ·Applied Physics Letters ·S. A. Nikishin,N. N. Faleev,Vladimir G. Antipov,S. Francoeur,Luis Grave de Peralta,G. A. Seryogin,H. Temkin,T. Prokofyeva,M. Holtz,S. N. G. Chu	173
14	Raman studies of nitrogen incorporation in GaAs1−xNx 1998 ·Applied Physics Letters ·T. Prokofyeva,(unknown),M. Seon,M. Holtz,Y. Qiu,S. A. Nikishin,H. Temkin	91

About T. Prokofyeva

T. Prokofyeva is a scholar working on Condensed Matter Physics, Mechanics of Materials and Electronic, Optical and Magnetic Materials, having authored 14 papers that have together received 739 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (13 papers), Metal and Thin Film Mechanics (7 papers) and Semiconductor materials and devices (6 papers). The work is most often cited by research in Condensed Matter Physics (670 citations), Electronic, Optical and Magnetic Materials (250 citations) and Mechanics of Materials (235 citations). T. Prokofyeva has collaborated with scholars based in United States, Russia and Mexico. Frequent co-authors include M. Holtz, H. Temkin, S. A. Nikishin, M. Seon, N. N. Faleev, Stefan Zollner, Vladimir G. Antipov, G. A. Seryogin, S. Francoeur and Luis Grave de Peralta. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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