M. Shin

1.2k total citations
23 papers, 978 citations indexed

About

M. Shin is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, M. Shin has authored 23 papers receiving a total of 978 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 15 papers in Electrical and Electronic Engineering and 9 papers in Mechanics of Materials. Recurrent topics in M. Shin's work include GaN-based semiconductor devices and materials (22 papers), Semiconductor materials and devices (14 papers) and Ga2O3 and related materials (9 papers). M. Shin is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Semiconductor materials and devices (14 papers) and Ga2O3 and related materials (9 papers). M. Shin collaborates with scholars based in United States, Russia and Germany. M. Shin's co-authors include Marek Skowroński, David W. Greve, Arthur R. Smith, R. M. Feenstra, A. Y. Polyakov, John E. Northrup, Jörg Neugebauer, R. G. Wilson, A. V. Govorkov and N. B. Smirnov and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Advanced Energy Materials.

In The Last Decade

M. Shin

23 papers receiving 960 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Shin United States 13 917 498 417 368 293 23 978
V. Kirchner Germany 12 648 0.7× 328 0.7× 237 0.6× 356 1.0× 206 0.7× 20 746
P. G. Middleton United Kingdom 10 794 0.9× 402 0.8× 234 0.6× 419 1.1× 163 0.6× 25 934
Tomoya Sugahara Japan 12 804 0.9× 345 0.7× 367 0.9× 309 0.8× 185 0.6× 18 900
Seiji Nakahata Japan 6 605 0.7× 295 0.6× 233 0.6× 282 0.8× 165 0.6× 9 653
W. Van der Stricht Belgium 13 673 0.7× 305 0.6× 193 0.5× 299 0.8× 208 0.7× 29 772
Maosheng Hao Japan 8 602 0.7× 279 0.6× 255 0.6× 287 0.8× 159 0.5× 16 695
A. Ramakrishnan Germany 12 839 0.9× 458 0.9× 509 1.2× 418 1.1× 136 0.5× 22 1.1k
T. Prokofyeva United States 9 670 0.7× 250 0.5× 272 0.7× 247 0.7× 235 0.8× 14 739
M. Vaille France 16 762 0.8× 381 0.8× 291 0.7× 384 1.0× 198 0.7× 25 842
W. G. Perry United States 13 803 0.9× 348 0.7× 335 0.8× 376 1.0× 239 0.8× 27 897

Countries citing papers authored by M. Shin

Since Specialization
Citations

This map shows the geographic impact of M. Shin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Shin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Shin more than expected).

Fields of papers citing papers by M. Shin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Shin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Shin. The network helps show where M. Shin may publish in the future.

Co-authorship network of co-authors of M. Shin

This figure shows the co-authorship network connecting the top 25 collaborators of M. Shin. A scholar is included among the top collaborators of M. Shin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Shin. M. Shin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Hun, et al.. (2025). High‐Areal‐Capacity Sulfur Cathode Enabled by Dual‐Phase Electrolyte for Sulfide‐Based All‐Solid‐State Batteries. Advanced Energy Materials. 15(28). 4 indexed citations
2.
Demchuk, Alexander, Donald B. Olson, M. Shin, et al.. (2002). High-Quality AlGaN/GaN HFET Structures Grown by MOCVD Using Intermediate High Temperature AlGaN/GaN Superlattices. MRS Proceedings. 743. 2 indexed citations
3.
Skierbiszewski, C., T. Suski, M. Leszczyński, et al.. (1999). Evidence for localized Si-donor state and its metastable properties in AlGaN. Applied Physics Letters. 74(25). 3833–3835. 50 indexed citations
4.
Smith, Arthur R., R. M. Feenstra, David W. Greve, et al.. (1999). GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations. Surface Science. 423(1). 70–84. 108 indexed citations
5.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (1998). Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy. Journal of Applied Physics. 84(2). 870–876. 96 indexed citations
6.
Smith, Arthur R., V. Ramachandran, R. M. Feenstra, et al.. (1998). Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001). MRS Internet Journal of Nitride Semiconductor Research. 3. 56 indexed citations
7.
Polyakov, A. Y., A. V. Govorkov, N. B. Smirnov, et al.. (1998). Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy. Solid-State Electronics. 42(4). 637–646. 19 indexed citations
8.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (1998). Schottky Diodes on MOCVD Grown AlGaN Films.. MRS Internet Journal of Nitride Semiconductor Research. 3. 32 indexed citations
9.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (1998). Properties of Si donors and persistent photoconductivity in AlGaN. Solid-State Electronics. 42(4). 627–635. 77 indexed citations
10.
Smith, Arthur R., V. Ramachandran, R. M. Feenstra, et al.. (1998). Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(3). 1641–1645. 52 indexed citations
11.
Polyakov, A. Y., M. Shin, Marek Skowroński, et al.. (1997). Growth of GaBN ternary solutions by organometallic vapor phase epitaxy. Journal of Electronic Materials. 26(3). 237–242. 36 indexed citations
12.
Polyakov, A. Y., M. Shin, Marek Skowroński, et al.. (1997). Ion implantation of Si, Mg and C into Al0.12Ga0.88N. Solid-State Electronics. 41(5). 703–706. 28 indexed citations
13.
Smith, Arthur R., V. Ramachandran, R. M. Feenstra, et al.. (1997). Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC. MRS Proceedings. 482. 1 indexed citations
14.
Polyakov, A. Y., M. Shin, Weijin Qian, et al.. (1997). Growth of AlBN solid solutions by organometallic vapor-phase epitaxy. Journal of Applied Physics. 81(4). 1715–1719. 31 indexed citations
15.
Vartuli, C. B., J. W. Lee, J. D. MacKenzie, et al.. (1997). ICP Dry Etching of III-V Nitrides. MRS Proceedings. 468. 6 indexed citations
16.
Shin, M., A. Y. Polyakov, Marek Skowroński, et al.. (1996). Factors Influencing the Electrical and Optical Properties of Aigan Layers on Sapphire. MRS Proceedings. 423. 3 indexed citations
17.
Polyakov, A. Y., M. Shin, S. J. Pearton, et al.. (1996). The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of Aigan Samples Grown on Sapphire. MRS Proceedings. 423. 6 indexed citations
18.
Polyakov, A. Y., A. V. Govorkov, N. B. Smirnov, et al.. (1996). Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE. MRS Proceedings. 449. 5 indexed citations
19.
Polyakov, A. Y., M. Shin, J. A. Freitas, et al.. (1996). On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy. Journal of Applied Physics. 80(11). 6349–6354. 84 indexed citations
20.
Goorsky, Mark S., A. Y. Polyakov, Marek Skowroński, M. Shin, & David W. Greve. (1996). High Resolution X-ray Diffraction Analysis of GaN-Based Heterostructures Grown by OMVPE. MRS Proceedings. 449. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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