P. Gibart

8.4k total citations
270 papers, 7.1k citations indexed

About

P. Gibart is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, P. Gibart has authored 270 papers receiving a total of 7.1k indexed citations (citations by other indexed papers that have themselves been cited), including 224 papers in Condensed Matter Physics, 133 papers in Electrical and Electronic Engineering and 127 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in P. Gibart's work include GaN-based semiconductor devices and materials (216 papers), Ga2O3 and related materials (116 papers) and Semiconductor materials and devices (92 papers). P. Gibart is often cited by papers focused on GaN-based semiconductor devices and materials (216 papers), Ga2O3 and related materials (116 papers) and Semiconductor materials and devices (92 papers). P. Gibart collaborates with scholars based in France, Germany and Spain. P. Gibart's co-authors include B. Beaumont, P. Vennéguès, M. Leroux, E. Monroy, F. Calle, F. Omnès, M. Vaille, S. Haffouz, E. Muñoz and H. Lahrèche and has published in prestigious journals such as The Journal of Chemical Physics, Journal of Geophysical Research Atmospheres and Physical review. B, Condensed matter.

In The Last Decade

P. Gibart

263 papers receiving 6.9k citations

Peers

Countries citing papers authored by P. Gibart

Since Specialization

Citations

This map shows the geographic impact of P. Gibart's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Gibart with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Gibart more than expected).

Fields of papers citing papers by P. Gibart

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Gibart. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Gibart. The network helps show where P. Gibart may publish in the future.

Co-authorship network of co-authors of P. Gibart

This figure shows the co-authorship network connecting the top 25 collaborators of P. Gibart. A scholar is included among the top collaborators of P. Gibart based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Gibart. P. Gibart is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Band-edge emission enhancement by longitudinal stress field in GaN 2008 ·Applied Physics Letters ·Duanjun Cai, Junyong Kang, P. Gibart, B. Beaumont, Takashi Sekiguchi, Shun Ito	3
2	Strain and microstructure in Fe‐doped GaN layers grown by low pressure metalorganic vapour phase epitaxy 2006 ·physica status solidi (a) ·M. Azize, M. Leroux, M. Laügt, P. Gibart, Z. Bougrioua	8
3	All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN 2006 ·Journal of Crystal Growth ·T. Malinauskas, R. Aleksiejūnas, K. Jarašiūnas, B. Beaumont, P. Gibart, A. Kakanakova‐Georgieva, Erik Janzén, D. Gogova, B. Ḿonemar, M. Heuken	32
4	Interplay between GaN and AlN sublattices in wurtzite AlxGa1−xN alloys revealed by Raman spectroscopy 2002 ·Journal of Applied Physics ·A.L. Álvarez, F. Calle, E. Monroy, J. L. Pau, M. A. Sánchez-Garcı́a, E. Calleja, E. Muñoz, F. Omnès, P. Gibart, P.R. Hageman	5
5	Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells 2001 ·Physics of the Solid State ·D. K. Nelson, (unknown), (unknown), Bernard Gil, N. Grandjean, B. Beaumont, J. Massies, P. Gibart	2
6	Crack-Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy 2001 ·physica status solidi (a) ·E. Feltin, B. Beaumont, (unknown), P. de Mierry, (unknown), M. Leroux, P. Gibart	33
7	Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy 2001 ·Materials Science and Engineering B ·Pierre Muret, (unknown), E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart	18
8	AlxGa₁-xN based UV visible-blind photodetector device applications 2000 ·Opto-Electronics Review ·F. Omnès, E. Monroy, F. Calle, E. Muñoz, B. Beaumont, P. Gibart	3
9	Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films 2000 ·Applied Physics Letters ·Yan Xin, E. M. James, I. Arslan, S. Sivananthan, Nigel D. Browning, S. J. Pennycook, F. Omnès, B. Beaumont, J. P. Faurie, P. Gibart	55
10	Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films 2000 ·Applied Physics Letters ·M. Benaı̈ssa, P. Vennéguès, B. Beaumont, P. Gibart, W. Saikaly, A. Charaı̈	21
11	Atomic scale analysis of defect structures and properties in III-nitride materials by Z-contrast imaging and EELS in STEM 1999 ·Journal of Electronic Materials ·Xin Yan, Nigel D. Browning, S. J. Pennycook, S. Sivananthan, R. Sporken, F. Omnès, B. Beaumont, P. Gibart, J. P. Faurie	0
12	Optimization of Si/N Treatment Time of Sapphire Surface and Its Effect on the MOVPE GaN Overlayers 1999 ·physica status solidi (a) ·(unknown), (unknown), (unknown), P. Gibart	1
13	Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts 1999 ·Physica B Condensed Matter ·F.D. Auret, S. A. Goodman, G. Myburg, F. K. Koschnick, J.‐M. Spaeth, B. Beaumont, P. Gibart	21
14	Low noise AlGaN metal-semiconductor-metal photodiodes 1999 ·Electronics Letters ·E. Monroy, F. Calle, (unknown), F. Omnès, P. Gibart	10
15	Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy 1998 ·MRS Internet Journal of Nitride Semiconductor Research ·B. Beaumont, M. Vaille, G. Nataf, (unknown), J. C. Guillaume, P. Vennéguès, S. Haffouz, P. Gibart	55
16	Below Band-Gap IR Response of Substrate-Free GaAs Solar Cells Using Two-Photon Up-Conversion 1996 ·Japanese Journal of Applied Physics ·P. Gibart, F. Auzel, Jean-Claude Guillaume, K. Zahraman	148
17	High-pressure photoluminescence of GaAs co-doped with Se and Ge 1995 ·Semiconductor Science and Technology ·M. Leroux, G. Neu, J. Leymarie, P. Gibart	1
18	High-pressure dependence of the room-temperature minority carrier lifetimes in GaAs 1989 ·Semiconductor Science and Technology ·M. Leroux, P. Gibart, Jean-Michel Sallèse, C. Vèrié	7
19	Magnetocrystalline anisotropy in FeCr2S4−xSex 1976 ·AIP conference proceedings ·Leon J. Goldstein, P. Gibart, L. Brossard	6
20	Préparation de monocristaux de tellurures de cobalt 1969 ·Journal of Crystal Growth ·P. Gibart, (unknown)	13

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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