B. Boudart

1.2k citations

71 papers · 954 indexed · h-index 16

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 35
Electronic, Optical and Magnetic Materials top 10%
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 32
- Silicon Carbide Semiconductor Technologies 13
- Advancements in Semiconductor Devices and Circuit Design 11
- Radio Frequency Integrated Circuit Design 7
Automotive Engineering top 5%
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 17
- Semiconductor materials and interfaces 7
Mechanics of Materials
- Metal and Thin Film Mechanics 6

Co-authors: Y. Guhel Christophe Gaquière Amrane Oukaour B. Tala‐Ighil Y. Crosnier R. Gallay Hamid Gualous J.C. Pesant
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Microelectronics Reliability (11 papers)Electronics Letters (7 papers)IEEE Transactions on Nuclear Science (5 papers)
Partner nations: France Belgium Australia

In The Last Decade

B. Boudart

68 papers receiving 931 citations

Peers

Countries citing papers authored by B. Boudart

Since Specialization

Citations

This map shows the geographic impact of B. Boudart's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Boudart with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Boudart more than expected).

Fields of papers citing papers by B. Boudart

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Boudart. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Boudart. The network helps show where B. Boudart may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B. Boudart, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Boudart Line = papers co-authored together B. Boudart links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers Microelectronics Reliability ·G R ngwood,Y. Guhel,Christophe Gaquière,B. Boudart	2023	0
2	Investigation Properties of Pervious and Water-Retaining Recycled Concrete to Mitigate Urban Heat Island Phenomena Sustainability ·Ruan Ke-feng,Carmen Sedano Balbas,Mohamed Boutouil,B. Boudart,Nassim Sebaïbi	2023	13
3	Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements IEEE Transactions on Electron Devices ·G R ngwood,Y. Guhel,Christophe Gaquière,B. Boudart	2022	0
4	Evolution over time of mackinawite generated on carbon steel by the SRB metabolic activity: an in-operando Raman study Biofouling ·William Lyons,Eka Shanti Amalina,FJ Medio,Y. Guhel,B. Boudart	2022	2
5	Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique Solid-State Electronics ·G. Doree,S. Petitdidier,Y. Guhel,和之永井,志朗野澤,林佑,Christophe Gaquière,B. Boudart	2016	4
6	Influence of Neutron Irradiation on Electron Traps Existing in GaN-Based Transistors IEEE Transactions on Nuclear Science ·G. Doree,S. Petitdidier,Y. Guhel,和之永井,志朗野澤,Christophe Gaquière,B. Boudart	2016	8
7	Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs Microelectronics Reliability ·Мингазов Б. Г., Сыченков В. А., Мухин А. Н., Давыдов Н. В., Мухаметгалиев Т. Х., Халиулин Р. Р.,G. Doree,Y. Guhel,Edward Braun,志朗野澤,Christophe Gaquière,B. Boudart	2015	7
8	Properties of ordinary concretes incorporating crushed queen scallop shells Materials and Structures ·J. N. PERRYt,Nassim Sebaïbi,Mohamed Boutouil,B. Boudart	2015	76
9	Influence of Neutrons Irradiation on Electrical Traps Existing in GaN-Based Transistors G. Doree,S. Petitdidier,Y. Guhel,和之永井,志朗野澤,Christophe Gaquière,B. Boudart	2015	5
10	Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard-switching performances evolution Margaret M. Ruller,B. Tala‐Ighil,I. MINAMI,B. Boudart	2005	1
11	Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps Solid-State Electronics ·Y. Guhel,B. Boudart,A. Vandevelde,Christophe Gaquière,E. Delos,D. Ducatteau,Z. Bougrioua,Zhong Yifan	2005	13
12	Raman characterization of Ar⁺ ion‐implanted GaN Journal of Raman Spectroscopy ·B. Boudart,Y. Guhel,J.C. Pesant,P. Dhamelincourt,M.A. Poisson	2002	12
13	Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs Microwave and Optical Technology Letters ·Y. Guhel,B. Boudart,Virginie Hoel,Daphné Hung Kung Sow,Christophe Gaquière,Назаров Виктор Викторович,M. A. Poisson,I. Daumiller,E. Kohn	2002	14
14	Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN Journal of Electronic Materials ·B. Boudart,Monica Fumagally,X. Wallart,J.C. Pesant,Sladjana Savatovic,D. Théron,Y. Crosnier,H. Lahrèche,F. Omnès	2000	36
15	Raman characterization of GaN synthesized by N implantation in GaAs substrate Journal of Raman Spectroscopy ·B. Boudart,J.C. Pesant,J.C. de Jaeger,P. Dhamelincourt	2000	5
16	Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications Applied Physics Letters ·B. Boudart,Christophe Gaquière,Monica Fumagally,M. Constant,Colonia Carboneras,Наталія Василівна Чіпко	1999	5
17	Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid/hydrogen peroxide/ammonium hydroxide for power applications Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Sikiru Olatunji Bode,B. Boudart,Y. Crosnier	1998	16
18	Bromine/methanol wet chemical etching of via holes for InP microwave devices Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Monica Fumagally,B. Boudart,S. Piotrowicz,Y. Crosnier	1998	3
19	Efficiency of neutron transmutation doping of InP investigated by optical and electrical methods Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·B. Boudart,Bernard Mari,B. Prévot,C. Schwab	1992	9
20	Compensation uniformity of InP:Fe as probed by electron paramagnetic resonance Materials Science and Engineering B ·B. Boudart,mnedelec,C. Schwab,Philippe Drouin,M. Gauneau	1991	2

About B. Boudart

B. Boudart is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Bioengineering and Electronic, Optical and Magnetic Materials, having authored 71 papers that have together received 954 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (35 papers), Semiconductor materials and devices (32 papers), Semiconductor Quantum Structures and Devices (17 papers), Silicon Carbide Semiconductor Technologies (13 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Radio Frequency Integrated Circuit Design (7 papers), Semiconductor materials and interfaces (7 papers) and Metal and Thin Film Mechanics (6 papers). The work is most often cited by research in Condensed Matter Physics (328 citations), Electronic, Optical and Magnetic Materials (243 citations), Electrical and Electronic Engineering (660 citations), Automotive Engineering (131 citations) and Atomic and Molecular Physics, and Optics (152 citations). B. Boudart has collaborated with scholars based in France, Belgium and Australia. Frequent co-authors include Y. Guhel, Christophe Gaquière, Amrane Oukaour, B. Tala‐Ighil, Y. Crosnier, R. Gallay, Hamid Gualous, J.C. Pesant, Mohamed Boutouil and Nassim Sebaïbi. Their work appears in journals such as Microelectronics Reliability, Electronics Letters, IEEE Transactions on Nuclear Science, Microelectronic Engineering and Journal of Raman Spectroscopy.

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