B. Boudart

1.2k total citations
71 papers, 954 citations indexed

About

B. Boudart is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B. Boudart has authored 71 papers receiving a total of 954 indexed citations (citations by other indexed papers that have themselves been cited), including 61 papers in Electrical and Electronic Engineering, 35 papers in Condensed Matter Physics and 23 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in B. Boudart's work include GaN-based semiconductor devices and materials (35 papers), Semiconductor materials and devices (32 papers) and Semiconductor Quantum Structures and Devices (17 papers). B. Boudart is often cited by papers focused on GaN-based semiconductor devices and materials (35 papers), Semiconductor materials and devices (32 papers) and Semiconductor Quantum Structures and Devices (17 papers). B. Boudart collaborates with scholars based in France, Belgium and Australia. B. Boudart's co-authors include Y. Guhel, Christophe Gaquière, Amrane Oukaour, B. Tala‐Ighil, Y. Crosnier, R. Gallay, Hamid Gualous, J.C. Pesant, Mohamed Boutouil and Nassim Sebaïbi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

B. Boudart

68 papers receiving 931 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Boudart France 16 660 328 243 185 152 71 954
Mustapha Faqir Morocco 15 432 0.7× 391 1.2× 123 0.5× 156 0.8× 119 0.8× 68 779
Liusheng Xiao China 17 468 0.7× 121 0.4× 84 0.3× 253 1.4× 33 0.2× 81 733
Yanyi Zhang China 13 296 0.4× 103 0.3× 73 0.3× 397 2.1× 298 2.0× 53 915
H. S. Choy Hong Kong 15 281 0.4× 91 0.3× 91 0.4× 287 1.6× 33 0.2× 29 882
Silu Huang China 15 79 0.1× 88 0.3× 92 0.4× 121 0.7× 90 0.6× 39 732
Minkyu Kang South Korea 12 93 0.1× 51 0.2× 130 0.5× 94 0.5× 53 0.3× 45 412
Shixiong Wu China 15 153 0.2× 110 0.3× 63 0.3× 146 0.8× 34 0.2× 50 589
Hong‐Kyu Jang South Korea 13 165 0.3× 38 0.1× 269 1.1× 165 0.9× 36 0.2× 28 573
Shun‐Tian Lin Taiwan 19 319 0.5× 59 0.2× 103 0.4× 431 2.3× 44 0.3× 52 1.3k

Countries citing papers authored by B. Boudart

Since Specialization
Citations

This map shows the geographic impact of B. Boudart's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Boudart with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Boudart more than expected).

Fields of papers citing papers by B. Boudart

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Boudart. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Boudart. The network helps show where B. Boudart may publish in the future.

Co-authorship network of co-authors of B. Boudart

This figure shows the co-authorship network connecting the top 25 collaborators of B. Boudart. A scholar is included among the top collaborators of B. Boudart based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Boudart. B. Boudart is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Guhel, Y., et al.. (2023). Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers. Microelectronics Reliability. 150. 115156–115156.
2.
Boutouil, Mohamed, et al.. (2023). Investigation Properties of Pervious and Water-Retaining Recycled Concrete to Mitigate Urban Heat Island Phenomena. Sustainability. 15(6). 5384–5384. 13 indexed citations
3.
Guhel, Y., et al.. (2022). Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements. IEEE Transactions on Electron Devices. 69(11). 6010–6015.
4.
Guhel, Y., et al.. (2022). Evolution over time of mackinawite generated on carbon steel by the SRB metabolic activity: an in-operando Raman study. Biofouling. 38(3). 271–285. 2 indexed citations
5.
Petitdidier, S., et al.. (2016). Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique. Solid-State Electronics. 127. 13–19. 4 indexed citations
6.
Petitdidier, S., et al.. (2016). Influence of Neutron Irradiation on Electron Traps Existing in GaN-Based Transistors. IEEE Transactions on Nuclear Science. 63(3). 1918–1926. 8 indexed citations
7.
Guhel, Y., et al.. (2015). Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs. Microelectronics Reliability. 55(9-10). 1719–1723. 7 indexed citations
8.
Sebaïbi, Nassim, et al.. (2015). Properties of ordinary concretes incorporating crushed queen scallop shells. Materials and Structures. 49(5). 1805–1816. 76 indexed citations
9.
Petitdidier, S., et al.. (2015). Influence of Neutrons Irradiation on Electrical Traps Existing in GaN-Based Transistors. 30. 1–4. 5 indexed citations
10.
11.
Guhel, Y., B. Boudart, Christophe Gaquière, et al.. (2005). Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps. Solid-State Electronics. 49(10). 1589–1594. 13 indexed citations
12.
Boudart, B., Y. Guhel, J.C. Pesant, P. Dhamelincourt, & M.A. Poisson. (2002). Raman characterization of Ar+ ion‐implanted GaN. Journal of Raman Spectroscopy. 33(4). 283–286. 12 indexed citations
13.
Guhel, Y., B. Boudart, Virginie Hoel, et al.. (2002). Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs. Microwave and Optical Technology Letters. 34(1). 4–6. 14 indexed citations
14.
Boudart, B., X. Wallart, J.C. Pesant, et al.. (2000). Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN. Journal of Electronic Materials. 29(5). 603–606. 36 indexed citations
15.
Boudart, B., J.C. Pesant, J.C. de Jaeger, & P. Dhamelincourt. (2000). Raman characterization of GaN synthesized by N implantation in GaAs substrate. Journal of Raman Spectroscopy. 31(7). 615–618. 5 indexed citations
16.
17.
Boudart, B., et al.. (1998). Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid/hydrogen peroxide/ammonium hydroxide for power applications. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(5). 2675–2679. 16 indexed citations
18.
Boudart, B., et al.. (1998). Bromine/methanol wet chemical etching of via holes for InP microwave devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(2). 561–564. 3 indexed citations
19.
Boudart, B., Bernard Mari, B. Prévot, & C. Schwab. (1992). Efficiency of neutron transmutation doping of InP investigated by optical and electrical methods. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 63(1-2). 101–105. 9 indexed citations
20.
Boudart, B., et al.. (1991). Compensation uniformity of InP:Fe as probed by electron paramagnetic resonance. Materials Science and Engineering B. 9(1-3). 27–30. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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