P.R. Hageman

2.0k total citations
99 papers, 1.7k citations indexed

About

P.R. Hageman is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, P.R. Hageman has authored 99 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 72 papers in Condensed Matter Physics, 59 papers in Electrical and Electronic Engineering and 41 papers in Materials Chemistry. Recurrent topics in P.R. Hageman's work include GaN-based semiconductor devices and materials (71 papers), Semiconductor materials and devices (44 papers) and ZnO doping and properties (32 papers). P.R. Hageman is often cited by papers focused on GaN-based semiconductor devices and materials (71 papers), Semiconductor materials and devices (44 papers) and ZnO doping and properties (32 papers). P.R. Hageman collaborates with scholars based in Netherlands, Poland and Sweden. P.R. Hageman's co-authors include P.K. Larsen, J.L. Weyher, L.J. Giling, Ł. Macht, I. Grzegory, A. Zauner, J.J. Schermer, G.J. Bauhuis, S. Porowski and S. Haffouz and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

P.R. Hageman

99 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P.R. Hageman Netherlands 23 1.2k 844 730 562 450 99 1.7k
Yasufumi Fujiwara Japan 20 784 0.7× 1.1k 1.3× 1.2k 1.7× 558 1.0× 621 1.4× 171 1.9k
J. A. Sanjurjo Brazil 22 703 0.6× 431 0.5× 1.3k 1.8× 895 1.6× 288 0.6× 48 1.9k
C. R. Miskys Germany 15 1.3k 1.1× 563 0.7× 645 0.9× 606 1.1× 475 1.1× 29 1.5k
James E. Downes Australia 21 325 0.3× 348 0.4× 503 0.7× 244 0.4× 222 0.5× 65 990
Natalie Fellows United States 19 1.1k 0.9× 493 0.6× 1.0k 1.4× 394 0.7× 588 1.3× 31 1.6k
S. Minagawa Japan 19 506 0.4× 863 1.0× 523 0.7× 209 0.4× 892 2.0× 76 1.4k
M. Laügt France 27 1.8k 1.5× 820 1.0× 1.3k 1.8× 1.2k 2.1× 749 1.7× 67 2.5k
Yu. É. Kitaev Russia 13 772 0.6× 315 0.4× 606 0.8× 361 0.6× 287 0.6× 57 1.1k
D. L. Overmyer United States 20 506 0.4× 244 0.3× 620 0.8× 673 1.2× 98 0.2× 52 1.3k
A. Mancini Italy 20 700 0.6× 288 0.3× 442 0.6× 407 0.7× 214 0.5× 99 1.2k

Countries citing papers authored by P.R. Hageman

Since Specialization
Citations

This map shows the geographic impact of P.R. Hageman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.R. Hageman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.R. Hageman more than expected).

Fields of papers citing papers by P.R. Hageman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.R. Hageman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.R. Hageman. The network helps show where P.R. Hageman may publish in the future.

Co-authorship network of co-authors of P.R. Hageman

This figure shows the co-authorship network connecting the top 25 collaborators of P.R. Hageman. A scholar is included among the top collaborators of P.R. Hageman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P.R. Hageman. P.R. Hageman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Arshad, Muhammad, et al.. (2010). Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy. Journal of Applied Physics. 108(10). 14 indexed citations
2.
Edgar, James H., et al.. (2008). HVPE of scandium nitride on 6H–SiC(0001). Journal of Crystal Growth. 310(6). 1075–1080. 27 indexed citations
3.
Hageman, P.R., et al.. (2004). The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations. Journal of Crystal Growth. 271(1-2). 192–199. 37 indexed citations
4.
Hageman, P.R., et al.. (2004). n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy. Journal of Crystal Growth. 267(1-2). 123–128. 51 indexed citations
5.
Hageman, P.R., J.J. Schermer, & P.K. Larsen. (2003). GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition. Thin Solid Films. 443(1-2). 9–13. 50 indexed citations
6.
Moret, M., et al.. (2002). Structure and morphology of epitaxial PbZrO3 films grown by metalorganic chemical vapor deposition. Journal of Applied Physics. 92(7). 3947–3957. 13 indexed citations
7.
Álvarez, A.L., F. Calle, E. Monroy, et al.. (2002). Interplay between GaN and AlN sublattices in wurtzite AlxGa1−xN alloys revealed by Raman spectroscopy. Journal of Applied Physics. 92(1). 223–226. 5 indexed citations
8.
Weyher, J.L., Ł. Macht, F.D. Tichelaar, et al.. (2002). Complementary study of defects in GaN by photo-etching and TEM. Materials Science and Engineering B. 91-92. 280–284. 16 indexed citations
9.
Hageman, P.R., et al.. (2001). Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy. Applied Physics Letters. 79(25). 4109–4111. 12 indexed citations
10.
Zauner, A., et al.. (2000). Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities. Applied Physics Letters. 76(17). 2355–2357. 40 indexed citations
11.
Moret, M., P.R. Hageman, M.A.C. Devillers, et al.. (2000). Mocvd growth and characterization of PbTiO3 thin films on Pt/Ti/SiO2/Si substrates. Integrated ferroelectrics. 31(1-4). 305–314. 4 indexed citations
12.
Zauner, A., M.A.C. Devillers, P.R. Hageman, P.K. Larsen, & S. Porowski. (1998). Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals. MRS Internet Journal of Nitride Semiconductor Research. 3. 7 indexed citations
13.
Hageman, P.R., et al.. (1997). Temperature dependence on the emerging crystal habit of GaInP deposited on nonplanar {001}GaAs substrates. Journal of Crystal Growth. 170(1-4). 710–714. 2 indexed citations
14.
Christianen, Peter C. M., et al.. (1994). Cooling reduction due to a rapid density decay of hot carriers in GaAs. Semiconductor Science and Technology. 9(5S). 713–715. 4 indexed citations
15.
Hageman, P.R., et al.. (1994). Misorientation dependence of zinc incorporation in GaAs. Journal of Crystal Growth. 142(3-4). 292–297. 5 indexed citations
16.
Hageman, P.R., et al.. (1992). Optical and electrical quality of InGaP grown on GaAs with low pressure metalorganic chemical vapour deposition. Journal of Crystal Growth. 125(1-2). 336–346. 13 indexed citations
17.
Hageman, P.R., M.H.J.M. de Croon, Joost N. H. Reek, & L.J. Giling. (1992). Pressure and temperature dependence of silicon doping of GaAs using Si2H6 in metalorganic chemical vapour deposition. Journal of Crystal Growth. 116(1-2). 169–177. 16 indexed citations
18.
Nijenhuis, John, et al.. (1991). Critical layer thickness of MOVPE-grown GaAs on InxGa1−xAs. Journal of Crystal Growth. 107(1-4). 496–501. 9 indexed citations
19.
Tang, Xiao, et al.. (1989). Si-doping of MOCVD GaAs: Closer analysis of the incorporation process. Journal of Crystal Growth. 98(4). 827–837. 31 indexed citations
20.
Bour, J. J., P. P. J. Schlebos, P.R. Hageman, et al.. (1986). Heterometallic Pt-Au complexes with μ-3 S bridging. Syntheses and structures of Pt2 (PPh3)4(μ-SAuCl)2·2CH2Cl2 and Pt2(PPh3)4−(μ-S)(μ-SAuPPh3)NO3·0.5H2O. Inorganica Chimica Acta. 119(2). 141–148. 43 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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