Mathieu Leroux

1.1k total citations
45 papers, 890 citations indexed

About

Mathieu Leroux is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Mathieu Leroux has authored 45 papers receiving a total of 890 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Condensed Matter Physics, 22 papers in Atomic and Molecular Physics, and Optics and 20 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Mathieu Leroux's work include GaN-based semiconductor devices and materials (41 papers), Semiconductor Quantum Structures and Devices (20 papers) and Ga2O3 and related materials (20 papers). Mathieu Leroux is often cited by papers focused on GaN-based semiconductor devices and materials (41 papers), Semiconductor Quantum Structures and Devices (20 papers) and Ga2O3 and related materials (20 papers). Mathieu Leroux collaborates with scholars based in France, South Korea and United States. Mathieu Leroux's co-authors include J. Massies, Bernard Gil, N. Grandjean, Pierre Lefèbvre, Pierre Bigenwald, J. Brault, B. Damilano, Sébastien Chenot, J. Allègre and H. Mathieu and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Physical Review B.

In The Last Decade

Mathieu Leroux

44 papers receiving 867 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Mathieu Leroux France 15 708 396 357 334 306 45 890
I. K. Shmagin United States 11 795 1.1× 360 0.9× 389 1.1× 419 1.3× 391 1.3× 16 1.0k
Junxue Ran China 14 576 0.8× 208 0.5× 402 1.1× 358 1.1× 367 1.2× 47 828
G. Nataf France 15 810 1.1× 363 0.9× 445 1.2× 571 1.7× 402 1.3× 31 1.1k
Hyunwook Shim South Korea 11 562 0.8× 350 0.9× 386 1.1× 622 1.9× 433 1.4× 14 990
J. Garczyński Poland 12 766 1.1× 212 0.5× 362 1.0× 410 1.2× 289 0.9× 14 867
E. Richter Germany 17 724 1.0× 228 0.6× 456 1.3× 445 1.3× 418 1.4× 69 919
T. Böttcher Germany 12 865 1.2× 266 0.7× 394 1.1× 482 1.4× 293 1.0× 33 971
Jeomoh Kim United States 14 519 0.7× 257 0.6× 266 0.7× 245 0.7× 216 0.7× 27 690
H. P. Maruska United States 11 825 1.2× 189 0.5× 489 1.4× 405 1.2× 240 0.8× 17 922

Countries citing papers authored by Mathieu Leroux

Since Specialization
Citations

This map shows the geographic impact of Mathieu Leroux's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mathieu Leroux with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mathieu Leroux more than expected).

Fields of papers citing papers by Mathieu Leroux

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mathieu Leroux. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mathieu Leroux. The network helps show where Mathieu Leroux may publish in the future.

Co-authorship network of co-authors of Mathieu Leroux

This figure shows the co-authorship network connecting the top 25 collaborators of Mathieu Leroux. A scholar is included among the top collaborators of Mathieu Leroux based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mathieu Leroux. Mathieu Leroux is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Leroux, Mathieu, W. Desrat, M. Moret, et al.. (2024). The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barriers. physica status solidi (b). 261(8). 1 indexed citations
2.
Kończewicz, L., Sandrine Juillaguet, Marcin Zając, et al.. (2022). Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process. physica status solidi (a). 220(16). 1 indexed citations
3.
Zheng, Zhongming, Hao Long, Mathieu Leroux, et al.. (2020). Photoassisted chemical smoothing of AlGaN surface after laser lift-off. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 38(4). 4 indexed citations
4.
Rennesson, S., Mathieu Leroux, M. Némoz, et al.. (2017). Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE. physica status solidi (a). 215(9). 15 indexed citations
5.
Contreras, Sylvie, L. Kończewicz, Hervé Peyre, et al.. (2016). High temperature electrical transport study of Si-doped AlN. Superlattices and Microstructures. 98. 253–258. 11 indexed citations
6.
Brault, J., Daniel Rosales, Mathieu Leroux, et al.. (2016). Ultraviolet light emitting diodes using III-N quantum dots. Materials Science in Semiconductor Processing. 55. 95–101. 12 indexed citations
7.
Kim, Je‐Hyung, Mathieu Leroux, M. Korytov, et al.. (2014). Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition. Nanotechnology. 25(30). 305703–305703. 6 indexed citations
8.
Brault, J., B. Damilano, B. Vinter, et al.. (2013). AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission. Japanese Journal of Applied Physics. 52(8S). 08JG01–08JG01. 17 indexed citations
9.
Coulon, Pierre‐Marie, et al.. (2012). GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes. Optics Express. 20(17). 18707–18707. 36 indexed citations
10.
Brault, J., F. Natali, B. Damilano, et al.. (2009). GaN/Al0.5Ga0.5N quantum dots and quantum dashes. physica status solidi (b). 246(4). 842–845. 2 indexed citations
11.
Gil, Bernard & Mathieu Leroux. (2003). Nitrogen related bound excitons in GaP:N under high hydrostatic pressure. physica status solidi (a). 195(3). 485–490. 3 indexed citations
12.
Feltin, E., S. Dalmasso, P. de Mierry, et al.. (2001). Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics. 40(7B). L738–L738. 39 indexed citations
13.
Grandjean, N., J. Massies, Mathieu Leroux, et al.. (1999). Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 962–967. 1 indexed citations
14.
Lefèbvre, Pierre, J. Allègre, Bernard Gil, et al.. (1999). Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells. Physical review. B, Condensed matter. 59(23). 15363–15367. 141 indexed citations
15.
Lefèbvre, Pierre, Bernard Gil, J. Allègre, et al.. (1999). Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 375–380. 5 indexed citations
16.
Lefèbvre, Pierre, Bernard Gil, J. Allègre, et al.. (1998). Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in Mbe-Grown GaN-AlGaN Quantum Wells. MRS Proceedings. 537. 1 indexed citations
17.
Grandjean, N., J. Massies, Mathieu Leroux, et al.. (1998). Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy. MRS Proceedings. 537.
18.
Grandjean, N., et al.. (1998). Violet InGaN/GaN Light Emitting Diodes Grown by Molecular Beam Epitaxy Using NH3. Japanese Journal of Applied Physics. 37(8A). L907–L907. 2 indexed citations
19.
Gil, Bernard, et al.. (1992). Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy. Physical review. B, Condensed matter. 46(3). 1886–1888. 16 indexed citations
20.
Leroux, Mathieu. (1989). Pressure induced phase transition in n-type InP at low temperature studied by photoluminescence. High Pressure Research. 1(2). 149–155. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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