J.C. de Jaeger

1.0k total citations
39 papers, 630 citations indexed

About

J.C. de Jaeger is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J.C. de Jaeger has authored 39 papers receiving a total of 630 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 26 papers in Condensed Matter Physics and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J.C. de Jaeger's work include GaN-based semiconductor devices and materials (26 papers), Radio Frequency Integrated Circuit Design (14 papers) and Semiconductor Quantum Structures and Devices (13 papers). J.C. de Jaeger is often cited by papers focused on GaN-based semiconductor devices and materials (26 papers), Radio Frequency Integrated Circuit Design (14 papers) and Semiconductor Quantum Structures and Devices (13 papers). J.C. de Jaeger collaborates with scholars based in France, Belgium and Germany. J.C. de Jaeger's co-authors include Virginie Hoel, N. Defrance, A. Soltani, Hassan Maher, Christophe Gaquière, A. BenMoussa, P. Frijlink, Marie Lesecq, E. Delos and B. Benbakhti and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

J.C. de Jaeger

39 papers receiving 605 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.C. de Jaeger France 13 437 424 203 176 143 39 630
J. S. Horwitz United States 12 191 0.4× 146 0.3× 163 0.8× 229 1.3× 141 1.0× 31 446
M. Rudziński Poland 14 522 1.2× 241 0.6× 248 1.2× 265 1.5× 130 0.9× 37 619
D. S. Rawal India 15 424 1.0× 474 1.1× 164 0.8× 153 0.9× 169 1.2× 83 619
JunShuai Xue China 16 575 1.3× 261 0.6× 333 1.6× 210 1.2× 197 1.4× 60 641
G. Zhao United States 13 268 0.6× 251 0.6× 189 0.9× 209 1.2× 151 1.1× 30 453
Eric D. Readinger United States 11 484 1.1× 199 0.5× 294 1.4× 242 1.4× 179 1.3× 30 550
H.-H. Wehmann Germany 15 333 0.8× 226 0.5× 241 1.2× 302 1.7× 162 1.1× 33 568
M. Antcliffe United States 16 565 1.3× 707 1.7× 199 1.0× 255 1.4× 241 1.7× 27 884
Koji Uematsu Japan 5 506 1.2× 214 0.5× 274 1.3× 238 1.4× 151 1.1× 5 547
Luke Gordon United States 9 226 0.5× 338 0.8× 284 1.4× 360 2.0× 85 0.6× 14 582

Countries citing papers authored by J.C. de Jaeger

Since Specialization
Citations

This map shows the geographic impact of J.C. de Jaeger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.C. de Jaeger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.C. de Jaeger more than expected).

Fields of papers citing papers by J.C. de Jaeger

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.C. de Jaeger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.C. de Jaeger. The network helps show where J.C. de Jaeger may publish in the future.

Co-authorship network of co-authors of J.C. de Jaeger

This figure shows the co-authorship network connecting the top 25 collaborators of J.C. de Jaeger. A scholar is included among the top collaborators of J.C. de Jaeger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.C. de Jaeger. J.C. de Jaeger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lesecq, Marie, et al.. (2018). Resistive nickel temperature sensor integrated into short-gate length AlGaN/GaN HEMT dedicated to RF applications. IEEE Electron Device Letters. 1–1. 8 indexed citations
2.
Cordier, Y., Éric Frayssinet, Magdalena Chmielowska, et al.. (2014). GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 498–501. 5 indexed citations
3.
Defrance, N., F. Lecourt, Marie Lesecq, et al.. (2013). Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates. IEEE Transactions on Electron Devices. 60(3). 1054–1059. 17 indexed citations
4.
Maher, Hassan, et al.. (2012). AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$. IEEE Electron Device Letters. 34(1). 36–38. 97 indexed citations
5.
Soltani, A., et al.. (2012). Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(3-4). 1083–1087. 4 indexed citations
6.
Lecourt, F., N. Ketteniss, H. Behmenburg, et al.. (2011). RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate. Electronics Letters. 47(3). 212–214. 9 indexed citations
7.
Talbi, Abdelkrim, A. Soltani, V. Mortet, et al.. (2011). Theoretical study of Lamb acoustic waves characteristics in a AlN/diamond composite membranes for Super High Frequency range operating devices. Diamond and Related Materials. 22. 66–69. 16 indexed citations
8.
Lesecq, Marie, et al.. (2010). High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape. IEEE Electron Device Letters. 32(2). 143–145. 48 indexed citations
9.
Benbakhti, B., M. ROUSSEAU, A. Soltani, & J.C. de Jaeger. (2006). Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport–Thermal Modeling. IEEE Transactions on Electron Devices. 53(9). 2237–2242. 14 indexed citations
10.
Soltani, A., A. BenMoussa, Virginie Hoel, et al.. (2006). Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT. Diamond and Related Materials. 16(2). 262–266. 30 indexed citations
11.
Bary, L., E. Morvan, B. Grimbert, et al.. (2006). Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design. HAL (Le Centre pour la Communication Scientifique Directe). 747–750. 12 indexed citations
12.
Rousseau, Michel, et al.. (2005). Physical study of the avalanche breakdown phenomenon in HEMTs. Solid-State Electronics. 49(4). 535–544. 4 indexed citations
13.
Ducatteau, D., Virginie Hoel, E. Morvan, et al.. (2005). Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate. IEEE Electron Device Letters. 27(1). 7–9. 88 indexed citations
14.
Sghaier, N., N. Yacoubi, Jean‐Marie Bluet, et al.. (2005). Current instabilities and deep level investigation on AlGaN/GaN HEMT's on silicon and saphir substrates. 88. 672–675. 2 indexed citations
15.
Théron, D., Y. Cordier, X. Wallart, et al.. (2001). Hemt structures and technology on GAAS and inp for power amplification in millimetre wave range. AMS Acta (University of Bologna). 1 indexed citations
16.
Boudart, B., J.C. Pesant, J.C. de Jaeger, & P. Dhamelincourt. (2000). Raman characterization of GaN synthesized by N implantation in GaAs substrate. Journal of Raman Spectroscopy. 31(7). 615–618. 5 indexed citations
17.
Delos, E., et al.. (2000). Enhancement mode metamorphic Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As HEMT on GaAs substrate with high breakdown voltage. IEEE Electron Device Letters. 21(11). 512–514. 11 indexed citations
18.
Jaeger, J.C. de, et al.. (1997). V-band monolithic AlGaAs/InGaAs/GaAs PM-HFET mixers. Microwave and Optical Technology Letters. 15(3). 139–144. 1 indexed citations
19.
Jaeger, J.C. de, et al.. (1989). Theoretical analysis of the breakdown voltage in InP MISFETs. Microwave and Optical Technology Letters. 2(4). 121–125. 2 indexed citations
20.
Jaeger, J.C. de, et al.. (1988). Etude comparative du claquage dans les transistors à effet de champ de puissance MESFET, TEGFET et MISFET. Revue de Physique Appliquée. 23(7). 1205–1213. 2 indexed citations

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