O. Tottereau

989 total citations
43 papers, 815 citations indexed

About

O. Tottereau is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, O. Tottereau has authored 43 papers receiving a total of 815 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Condensed Matter Physics, 23 papers in Electrical and Electronic Engineering and 16 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in O. Tottereau's work include GaN-based semiconductor devices and materials (35 papers), Semiconductor materials and devices (17 papers) and Ga2O3 and related materials (16 papers). O. Tottereau is often cited by papers focused on GaN-based semiconductor devices and materials (35 papers), Semiconductor materials and devices (17 papers) and Ga2O3 and related materials (16 papers). O. Tottereau collaborates with scholars based in France, Germany and Tunisia. O. Tottereau's co-authors include P. Vennéguès, J. Massies, F. Sèmond, Y. Cordier, Sébastien Chenot, M. Leroux, M. Laügt, P. de Mierry, Jean-Marc Bethoux and F. Natali and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

O. Tottereau

42 papers receiving 801 citations

Peers

O. Tottereau
B. Borisov United States
K. Fujito Japan
Karine Hestroffer United States
C. Giesen Germany
Po Shan Hsu United States
A. Sohmer Germany
R. S. Qhalid Fareed United States
M. Kryśko Poland
Jeong-Yeol Han South Korea
Katsushi Akita Japan
B. Borisov United States
O. Tottereau
Citations per year, relative to O. Tottereau O. Tottereau (= 1×) peers B. Borisov

Countries citing papers authored by O. Tottereau

Since Specialization
Citations

This map shows the geographic impact of O. Tottereau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by O. Tottereau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites O. Tottereau more than expected).

Fields of papers citing papers by O. Tottereau

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by O. Tottereau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by O. Tottereau. The network helps show where O. Tottereau may publish in the future.

Co-authorship network of co-authors of O. Tottereau

This figure shows the co-authorship network connecting the top 25 collaborators of O. Tottereau. A scholar is included among the top collaborators of O. Tottereau based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with O. Tottereau. O. Tottereau is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cordier, Y., et al.. (2018). Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon. Journal of Crystal Growth. 507. 220–225. 2 indexed citations
2.
Tottereau, O., et al.. (2017). Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates. Journal of Applied Physics. 122(10). 37 indexed citations
3.
Markurt, T., Aimeric Courville, Katia March, et al.. (2017). Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polar AlN epitaxial layers. Journal of Applied Physics. 122(15). 27 indexed citations
4.
Ganino, Clément, et al.. (2017). Formation of Secondary Ca-Fe-Rich Minerals Assemblages in CV Chondrites. Lunar and Planetary Science Conference. 1396. 1 indexed citations
5.
Semond, Fabrice, Marc Portail, O. Tottereau, et al.. (2017). Ion-induced interdiffusion of surface GaN quantum dots. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 409. 107–110. 1 indexed citations
6.
Courville, Aimeric, M. Teisseire, M. J. Rashid, et al.. (2013). Imaging and counting threading dislocations in c-oriented epitaxial GaN layers. Semiconductor Science and Technology. 28(3). 35006–35006. 34 indexed citations
7.
Baron, N., Y. Cordier, Sébastien Chenot, et al.. (2009). The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111). Journal of Applied Physics. 105(3). 49 indexed citations
8.
Cordier, Y., Marc Portail, Sébastien Chenot, et al.. (2008). AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111). Journal of Crystal Growth. 310(20). 4417–4423. 42 indexed citations
9.
Cordier, Y., Marc Portail, Sébastien Chenot, et al.. (2008). Realization of AlGaN/GaN HEMTs on 3C‐SiC/Si(111) substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1983–1985. 9 indexed citations
10.
Cordier, Y., N. Baron, Sébastien Chenot, et al.. (2008). Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature. Journal of Crystal Growth. 311(7). 2002–2005. 20 indexed citations
11.
Cordier, Y., Sébastien Chenot, M. Laügt, et al.. (2007). Realization of AlGaN/GaN HEMTs on Si‐on‐polySiC substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(7). 2670–2673. 1 indexed citations
12.
Cordier, Y., M. Azize, N. Baron, et al.. (2007). AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination. Journal of Crystal Growth. 309(1). 1–7. 26 indexed citations
13.
Martínez‐Tomás, C., J. Zúñiga‐Pérez, P. Vennéguès, O. Tottereau, & V. Muñoz‐Sanjosé. (2007). X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy. Applied Physics A. 88(1). 61–64.
14.
Cordier, Y., M. Azize, N. Baron, et al.. (2007). Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures. Journal of Crystal Growth. 310(5). 948–954. 13 indexed citations
15.
Benaı̈ssa, M., P. Vennéguès, O. Tottereau, Nguyễn Hữu Lâm, & F. Sèmond. (2006). Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots. Applied Physics Letters. 89(23). 11 indexed citations
16.
Mierry, P. de, Z. Bougrioua, O. Tottereau, et al.. (2005). Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes. Journal of Crystal Growth. 285(4). 450–458. 7 indexed citations
17.
Bethoux, Jean-Marc, P. Vennéguès, F. Natali, et al.. (2003). Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks. Journal of Applied Physics. 94(10). 6499–6507. 84 indexed citations
18.
Schenk, H. P. D., P. Vennéguès, O. Tottereau, T. Riemann, & J. Christen. (2003). Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy. Journal of Crystal Growth. 258(3-4). 232–250. 15 indexed citations
19.
Tottereau, O., et al.. (2002). Full Si Wafer Conversion into Bulk 3C-SiC. Materials science forum. 389-393. 147–150. 3 indexed citations
20.
Lahrèche, H., P. Vennéguès, O. Tottereau, et al.. (2000). Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111). Journal of Crystal Growth. 217(1-2). 13–25. 82 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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