F. Omnès

4.0k total citations
126 papers, 3.2k citations indexed

About

F. Omnès is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, F. Omnès has authored 126 papers receiving a total of 3.2k indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Electrical and Electronic Engineering, 57 papers in Condensed Matter Physics and 54 papers in Materials Chemistry. Recurrent topics in F. Omnès's work include GaN-based semiconductor devices and materials (51 papers), Semiconductor Quantum Structures and Devices (42 papers) and Semiconductor materials and devices (38 papers). F. Omnès is often cited by papers focused on GaN-based semiconductor devices and materials (51 papers), Semiconductor Quantum Structures and Devices (42 papers) and Semiconductor materials and devices (38 papers). F. Omnès collaborates with scholars based in France, Spain and Portugal. F. Omnès's co-authors include Manijeh Razeghi, E. Monroy, Julien Pernot, M. Defour, Pierre Muret, F. Calle, P. Maurel, Pierre‐Nicolas Volpe, E. Bustarret and Charles Agnès and has published in prestigious journals such as Physical review. B, Condensed matter, ACS Nano and Applied Physics Letters.

In The Last Decade

F. Omnès

124 papers receiving 3.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Omnès France 32 1.7k 1.7k 1.2k 913 581 126 3.2k
E. Bustarret France 33 3.4k 2.0× 2.1k 1.3× 1.1k 0.9× 1.2k 1.3× 864 1.5× 160 4.7k
M. Brunel France 26 1.3k 0.7× 1.1k 0.7× 698 0.6× 390 0.4× 245 0.4× 140 2.4k
Stefan Zollner United States 33 1.6k 0.9× 3.0k 1.8× 1.8k 1.5× 525 0.6× 221 0.4× 161 4.1k
S. T. Pantelides United States 32 2.1k 1.2× 2.1k 1.3× 1.1k 0.9× 283 0.3× 172 0.3× 72 3.6k
P. Alnot France 27 1.2k 0.7× 1.6k 1.0× 740 0.6× 368 0.4× 746 1.3× 124 3.1k
Shichio Kawai Japan 31 1.7k 1.0× 875 0.5× 592 0.5× 1.1k 1.2× 179 0.3× 102 2.7k
S. Radelaar Netherlands 27 1.1k 0.6× 1.0k 0.6× 968 0.8× 483 0.5× 318 0.5× 186 2.7k
Paul F. Fewster United Kingdom 25 1.0k 0.6× 1.1k 0.7× 1.1k 1.0× 567 0.6× 258 0.4× 74 2.2k
Inspec 10 1.6k 1.0× 2.0k 1.2× 1.3k 1.1× 399 0.4× 327 0.6× 13 3.3k
S. Ves Greece 31 2.1k 1.2× 1.2k 0.7× 867 0.7× 390 0.4× 173 0.3× 118 2.8k

Countries citing papers authored by F. Omnès

Since Specialization
Citations

This map shows the geographic impact of F. Omnès's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Omnès with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Omnès more than expected).

Fields of papers citing papers by F. Omnès

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Omnès. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Omnès. The network helps show where F. Omnès may publish in the future.

Co-authorship network of co-authors of F. Omnès

This figure shows the co-authorship network connecting the top 25 collaborators of F. Omnès. A scholar is included among the top collaborators of F. Omnès based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Omnès. F. Omnès is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Arnault, Jean‐Charles, et al.. (2013). Etching mechanism of diamond by Ni nanoparticles for fabrication of nanopores. Carbon. 59. 448–456. 56 indexed citations
2.
Hébert, Clément, et al.. (2012). Formation of oriented nanostructures in diamond using metallic nanoparticles. Nanotechnology. 23(45). 455302–455302. 31 indexed citations
3.
Barjon, Julien, J. Chevallier, F. Jomard, et al.. (2011). Hydrogen-induced passivation of boron acceptors in monocrystalline and polycrystalline diamond. Physical Chemistry Chemical Physics. 13(24). 11511–11511. 11 indexed citations
4.
Araújo, D., et al.. (2011). Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(4). 1366–1370. 7 indexed citations
5.
Mandal, Soumen, Cécile Naud, Oliver A. Williams, et al.. (2010). Nanostructures made from superconducting boron-doped diamond. Nanotechnology. 21(19). 195303–195303. 26 indexed citations
6.
Fernández‐Lorenzo, Concha, D. Araújo, Joaquín Martín‐Calleja, et al.. (2010). Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers. Diamond and Related Materials. 19(7-9). 904–907. 11 indexed citations
7.
Mandal, Soumen, Cécile Naud, Oliver A. Williams, et al.. (2010). Detailed study of superconductivity in nanostructured nanocrystalline boron doped diamond thin films. physica status solidi (a). 207(9). 2017–2022. 6 indexed citations
8.
Kociniewski, T., Z. Remeš, C. Mer, et al.. (2009). Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy. Diamond and Related Materials. 18(5-8). 827–830. 3 indexed citations
9.
Agnès, Charles, Jean‐Charles Arnault, F. Omnès, et al.. (2009). XPS study of ruthenium tris-bipyridine electrografted from diazonium salt derivative on microcrystalline boron doped diamond. Physical Chemistry Chemical Physics. 11(48). 11647–11647. 83 indexed citations
10.
Volpe, Pierre‐Nicolas, Pierre Muret, F. Omnès, et al.. (2009). Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching. Diamond and Related Materials. 18(10). 1205–1210. 41 indexed citations
11.
Omnès, F., et al.. (2007). Wide bandgap UV photodetectors: a short review of devices and applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6473. 64730E–64730E. 108 indexed citations
12.
Omnès, F., et al.. (2005). Realisation of ‘Solar Blind’ AlGaN Photodetectors: Measured and calculated spectral response. Microelectronics Journal. 37(4). 336–339. 8 indexed citations
13.
Wagener, M., et al.. (2003). Intrinsic compensation of silicon-doped AlGaN. Applied Physics Letters. 83(20). 4193–4195. 21 indexed citations
14.
Álvarez, A.L., F. Calle, E. Monroy, et al.. (2002). Interplay between GaN and AlN sublattices in wurtzite AlxGa1−xN alloys revealed by Raman spectroscopy. Journal of Applied Physics. 92(1). 223–226. 5 indexed citations
15.
Monroy, E., Tomás Palacios, O. Hainaut, et al.. (2002). Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection. Applied Physics Letters. 80(17). 3198–3200. 77 indexed citations
16.
Schenk, H. P. D., M. Leroux, P. de Mierry, et al.. (2001). Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers. Materials Science and Engineering B. 82(1-3). 163–166. 1 indexed citations
17.
Omnès, F., E. Monroy, F. Calle, et al.. (2000). AlxGa₁-xN based UV visible-blind photodetector device applications. Opto-Electronics Review. 43–55. 3 indexed citations
18.
Schenk, H. P. D., P. de Mierry, M. Laügt, et al.. (1999). Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN. Applied Physics Letters. 75(17). 2587–2589. 46 indexed citations
19.
Razeghi, Manijeh, P. Maurel, M. Defour, F. Omnès, & O. Acher. (1988). MOCVD growth of III-V heterojunctions and superlattices on Si substrates for photonic devices. European Conference on Optical Communication. 74–82. 1 indexed citations
20.
Razeghi, Manijeh, P. Maurel, F. Omnès, et al.. (1988). High-quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low-pressure metalorganic chemical vapor deposition. Journal of Applied Physics. 63(9). 4511–4514. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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