N. Defrance

572 citations

33 papers · 410 indexed · h-index 11

Co-authors: Virginie Hoel J.C. de Jaeger Y. Cordier Hassan Maher Marie Lesecq P. Frijlink F. Lecourt Jean-Claude de Jaeger
Topics: GaN-based semiconductor devices and materials (32 papers)Semiconductor materials and devices (16 papers)Radio Frequency Integrated Circuit Design (10 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Scientific Reports IEEE Transactions on Electron Devices IEEE Electron Device Letters
Partner nations: France Germany Canada

In The Last Decade

N. Defrance

30 papers receiving 396 citations

Peers

Countries citing papers authored by N. Defrance

Since Specialization

Citations

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Fields of papers citing papers by N. Defrance

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Defrance. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Defrance. The network helps show where N. Defrance may publish in the future.

Co-authorship network of co-authors of N. Defrance

This figure shows the co-authorship network connecting the top 25 collaborators of N. Defrance. A scholar is included among the top collaborators of N. Defrance based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Defrance. N. Defrance is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors 2023 ·Materials Science in Semiconductor Processing ·Micka Bah,Daniel Alquier,Marie Lesecq,N. Defrance,(unknown),(unknown),Éric Frayssinet,Marc Portail,Jean-Claude de Jaeger,Y. Cordier	2
2	Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes 2023 ·Electronics ·(unknown),N. Defrance,Étienne Okada,(unknown),(unknown),(unknown),(unknown),Nadir Idir,Jean-Claude de Jaeger	0
3	AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications 2022 ·Materials science forum ·Marie Lesecq,Éric Frayssinet,Marc Portail,Micka Bah,N. Defrance,(unknown),(unknown),Marcin Zieliński,Daniel Alquier,Jean-Claude de Jaeger,Y. Cordier	0
4	New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor 2020 ·Semiconductor Science and Technology ·(unknown),(unknown),(unknown),Éric Frayssinet,(unknown),F. Lecourt,N. Defrance,Nathalie Labat,François Boone,A. Soltani,Abdelatif Jaouad,Y. Cordier,Hassan Maher	2
5	Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies 2020 ·Scientific Reports ·Micka Bah,(unknown),Marie Lesecq,N. Defrance,(unknown),Jean-Claude de Jaeger,Éric Frayssinet,(unknown),(unknown),Daniel Alquier,Y. Cordier	25
6	Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors 2020 ·Semiconductor Science and Technology ·(unknown),(unknown),Sébastien Chenot,J. Brault,B. Damilano,S. Vézian,Éric Frayssinet,(unknown),(unknown),N. Defrance,F. Lecourt,Nathalie Labat,Hassan Maher,Y. Cordier	2
7	Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters 2019 ·IEEE Transactions on Electron Devices ·(unknown),N. Defrance,Arnaud Videt,Nadir Idir,(unknown),(unknown)	19
8	S-Parameter Characterization of GaN HEMT Power Transistors for High Frequency Modeling 2018 ·(unknown),N. Defrance,Arnaud Videt,Nadir Idir,(unknown)	1
9	Modeling DC, RF and noise behavior of GaN HEMTs using ASM-HEMT compact model 2016 ·Avirup Dasgupta,Sudip Ghosh,Sheikh Aamir Ahsan,Yogesh Singh Chauhan,Sourabh Khandelwal,N. Defrance	6
10	GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers 2014 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Y. Cordier,Éric Frayssinet,Magdalena Chmielowska,M. Némoz,Aimeric Courville,P. Vennéguès,P. de Mierry,(unknown),(unknown),(unknown),Quentin Simon,L. Le Brizoual,M. A. Djouadi,N. Defrance,Marie Lesecq,(unknown),(unknown),(unknown),J.C. de Jaeger	5
11	Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates 2013 ·IEEE Transactions on Electron Devices ·N. Defrance,F. Lecourt,(unknown),Marie Lesecq,Virginie Hoel,(unknown),Y. Cordier,(unknown),J.C. de Jaeger	17
12	AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$ 2012 ·IEEE Electron Device Letters ·(unknown),Hassan Maher,N. Defrance,Virginie Hoel,J.C. de Jaeger,(unknown),P. Frijlink	97
13	435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing 2012 ·Electronics Letters ·S. Bouzid,Hassan Maher,N. Defrance,Virginie Hoel,F. Lecourt,(unknown),(unknown),P. Frijlink	4
14	Analysis of the SiO₂/Si₃N₄ passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate 2012 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown),A. Soltani,Jean-Claude Gerbedoen,(unknown),N. Defrance,Y. Cordier,J.C. de Jaeger	4
15	RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate 2011 ·Electronics Letters ·F. Lecourt,N. Ketteniss,H. Behmenburg,N. Defrance,Virginie Hoel,(unknown),Andrei Vescan,C. Giesen,M. Heuken,J.C. de Jaeger	9
16	Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate 2010 ·Electronics Letters ·N. Defrance,(unknown),Virginie Hoel,Jean-Claude Gerbedoen,A. Soltani,Michel Rousseau,(unknown),R. Langer,H. Lahrèche	4
17	Thermal behavior analysis of GaN based epi‐material on different substrates by means of a physical–thermal model 2010 ·physica status solidi (a) ·(unknown),Michel Rousseau,N. Defrance,Virginie Hoel,Ali Soltani Tehrani,R. Langer,(unknown)	8
18	AlGaN/GaN HEMT High Power Densities on $\hbox{SiC/} \hbox{SiO}_{2}$/poly-SiC Substrates 2009 ·IEEE Electron Device Letters ·N. Defrance,(unknown),(unknown),Virginie Hoel,(unknown),Christophe Gaquière,(unknown),M.A. di Forte-Poisson,R. Langer,M. ROUSSEAU,(unknown)	9
19	Loss characteristics in coplanar propagation waveguides fabricated on IIa diamond substrates 2009 ·Diamond and Related Materials ·N. Defrance,Jean-Claude Gerbedoen,A. Soltani,(unknown),J. Morse	1
20	First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate 2008 ·Electronics Letters ·Virginie Hoel,N. Defrance,J.C. de Jaeger,(unknown),Christophe Gaquière,H. Lahrèche,R. Langer,(unknown),(unknown),S.L. Delage	6

About N. Defrance

N. Defrance is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 33 papers that have together received 410 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (32 papers), Semiconductor materials and devices (16 papers) and Radio Frequency Integrated Circuit Design (10 papers). The work is most often cited by research in Condensed Matter Physics (356 citations), Electronic, Optical and Magnetic Materials (142 citations) and Electrical and Electronic Engineering (302 citations). N. Defrance has collaborated with scholars based in France, Germany and Canada. Frequent co-authors include Virginie Hoel, J.C. de Jaeger, Y. Cordier, Hassan Maher, Marie Lesecq, P. Frijlink, F. Lecourt, Jean-Claude de Jaeger, Étienne Okada and B. Damilano. Their work appears in journals such as Scientific Reports, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

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