S. J. Pearton

82.4k total citations · 15 hit papers
2.2k papers, 66.1k citations indexed

About

S. J. Pearton is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, S. J. Pearton has authored 2.2k papers receiving a total of 66.1k indexed citations (citations by other indexed papers that have themselves been cited), including 1.5k papers in Electrical and Electronic Engineering, 996 papers in Condensed Matter Physics and 816 papers in Materials Chemistry. Recurrent topics in S. J. Pearton's work include Semiconductor materials and devices (1.0k papers), GaN-based semiconductor devices and materials (988 papers) and Ga2O3 and related materials (698 papers). S. J. Pearton is often cited by papers focused on Semiconductor materials and devices (1.0k papers), GaN-based semiconductor devices and materials (988 papers) and Ga2O3 and related materials (698 papers). S. J. Pearton collaborates with scholars based in United States, South Korea and Russia. S. J. Pearton's co-authors include F. Ren, D. P. Norton, C. R. Abernathy, Jihyun Kim, Young-Woo Heo, R. J. Shul, A. Y. Polyakov, Michael Stavola, J.C. Zolper and Jiancheng Yang and has published in prestigious journals such as Physical Review Letters, Advanced Materials and SHILAP Revista de lepidopterología.

In The Last Decade

S. J. Pearton

2.1k papers receiving 64.1k citations

Hit Papers

A review of Ga2O... 1987 2026 2000 2013 2018 1999 1992 2002 1987 500 1000 1.5k 2.0k
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. A review of Ga2O3 materials, processing, and devices
    2018 2.3k citations S. J. Pearton, F. Ren et al. profile →
  2. GaN: Processing, defects, and devices
    1999 1.5k citations S. J. Pearton, F. Ren et al. profile →
  3. Whispering-gallery mode microdisk lasers
    1992 1.1k citations S. J. Pearton et al. profile →
  4. Wide band gap ferromagnetic semiconductors and oxides
    2002 892 citations S. J. Pearton, C. R. Abernathy et al. profile →
  5. Hydrogen in crystalline semiconductors
    1987 732 citations S. J. Pearton et al. profile →
  6. Zinc oxide bulk, thin films and nanostructures : processing, properties and applications
    2006 674 citations S. J. Pearton et al. profile →
  7. Hydrogen in Crystalline Semiconductors
    1992 591 citations S. J. Pearton et al. profile →
  8. Recent advances in processing of ZnO
    2004 588 citations S. J. Pearton et al. profile →
  9. ZnO: growth, doping & processing
    2004 538 citations S. J. Pearton et al. Materials Today profile →
  10. The Blue Laser Diode
    2000 516 citations S. J. Pearton et al. profile →
  11. Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
    2018 512 citations S. J. Pearton, F. Ren et al. profile →
  12. ZnO nanowire growth and devices
    2004 488 citations F. Ren, S. J. Pearton et al. profile →
  13. Hydrogen-selective sensing at room temperature with ZnO nanorods
    2005 479 citations F. Ren, S. J. Pearton et al. profile →
  14. Hydrogen interactions with defects in crystalline solids
    1992 447 citations S. J. Pearton et al. profile →
  15. Single-electron capacitance spectroscopy of discrete quantum levels
    1992 363 citations S. J. Pearton et al. profile →

Peers

S. J. Pearton
Comparison fields: 5 of 148
  • Electrical and Electronic Engineering 39.8k
  • Materials Chemistry 35.4k
  • Electronic, Optical and Magnetic Materials 24.4k
  • Condensed Matter Physics 22.8k
  • Atomic and Molecular Physics, and Optics 14.2k
Replace F. Ren with:
F. Ren United States
Chris G. Van de Walle United States
Alex Zettl United States
H. Morkoç̌ United States
James S. Speck United States
S. V. Dubonos Russia
G. Dresselhaus United States
Lars Hultman Sweden
M. Stutzmann Germany
Su‐Huai Wei United States
F. Ren United States View profile →
Citations per field, relative to S. J. Pearton
S. J. Pearton · 1×
Citations per year, relative to S. J. Pearton
S. J. Pearton · 1×

Countries citing papers authored by S. J. Pearton

Since Specialization
Citations

This map shows the geographic impact of S. J. Pearton's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. J. Pearton with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. J. Pearton more than expected).

Fields of papers citing papers by S. J. Pearton

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. J. Pearton. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. J. Pearton. The network helps show where S. J. Pearton may publish in the future.

Co-authorship network of co-authors of S. J. Pearton

This figure shows the co-authorship network connecting the top 25 collaborators of S. J. Pearton. A scholar is included among the top collaborators of S. J. Pearton based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. J. Pearton. S. J. Pearton is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
# Work Indexed citations
1
Rutile germanium dioxide: An emerging ultrawide bandgap semiconductor for power device applications – A review
2025 ·Materials Today ·(unknown), (unknown), Jang Hyeok Park, S. J. Pearton, You Seung Rim
6
2
Photochemical wet etching of single-crystal c-plane AlN under UV illumination
2025 ·Applied Surface Science ·Junghyun Park, (unknown), Kwang Hyeon Baik, F. Ren, S. J. Pearton, Soohwan Jang
2
3
Role of surface treatments and localized surface plasmon nanoparticles on internal quantum efficiency of 800 nm diameter blue GaN/InGaN nano light emitting diodes
2024 ·Journal of Alloys and Compounds ·In‐Hwan Lee, (unknown), (unknown), (unknown), A.A. Vasil'ev, (unknown), (unknown), А. I. Kochkova, A. Y. Polyakov, S. J. Pearton
2
4
60Co γ-irradiation of AlGaN UVC light-emitting diodes
2023 ·Optical Materials ·Xinyi Xia, Sergei P. Stepanoff, Aman Haque, Douglas E. Wolfe, Simon Barke, Peter Wass, F. Ren, John Conklin, S. J. Pearton
2
5
Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth
2023 ·Advanced Materials Interfaces ·A. Y. Polyakov, In‐Hwan Lee, В. И. Николаев, (unknown), Andrey Miakonkikh, M. P. Scheglov, E. B. Yakimov, (unknown), A.A. Vasil'ev, А. I. Kochkova, Ivan Shchemerov, А. В. Черных, S. J. Pearton
8
6
Mechanism for Long Photocurrent Time Constants in α-Ga2O3 UV Photodetectors
2023 ·ECS Journal of Solid State Science and Technology ·A. Y. Polyakov, А. V. Аlmaev, В. И. Николаев, А. И. Печников, (unknown), A.A. Vasil'ev, E. B. Yakimov, А. I. Kochkova, (unknown), (unknown), S. J. Pearton
11
7
Carrier removal rates in 1.1 MeV proton irradiated α-Ga2O3 (Sn)
2023 ·Journal of Physics D Applied Physics ·(unknown), В. И. Николаев, А. И. Печников, П. Б. Лагов, Ivan Shchemerov, A.A. Vasil'ev, А. В. Черных, А. I. Kochkova, (unknown), Yu. S. Pavlov, Т. V. Kulevoy, A. S. Doroshkevich, (unknown), (unknown), S. J. Pearton
10
8
Ion energy dependence of dry etch damage depth in Ga2O3 Schottky rectifiers
2023 ·Applied Surface Science ·Chao-Ching Chiang, Xinyi Xia, Jian-Sian Li, F. Ren, S. J. Pearton
6
9
Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3
2023 ·Journal of Alloys and Compounds ·A. Y. Polyakov, A.A. Vasil'ev, Ivan Shchemerov, А. В. Черных, (unknown), (unknown), А. I. Kochkova, П. Б. Лагов, Andrey Miakonkikh, Yu. S. Pavlov, (unknown), In‐Hwan Lee, Andrej Kuznetsov, S. J. Pearton
8
10
Non-Thermal Annealing of Gamma Irradiated GaN HEMTs with Electron Wind Force
2022 ·ECS Journal of Solid State Science and Technology ·Md Abu Jafar Rasel, Sergei P. Stepanoff, Aman Haque, Douglas E. Wolfe, F. Ren, S. J. Pearton
18
11
Electrical and Structural Properties of Two-Inch Diameter (0001) α -Ga 2 O 3 Films Doped with Sn and Grown by Halide Epitaxy
2022 ·ECS Journal of Solid State Science and Technology ·В. И. Николаев, A. Y. Polyakov, С. И. Степанов, А. И. Печников, E. B. Yakimov, А. В. Черных, A.A. Vasil'ev, Ivan Shchemerov, А. I. Kochkova, (unknown), (unknown), S. J. Pearton
4
12
Selective Wet and Dry Etching of NiO over β -Ga 2 O 3
2022 ·ECS Journal of Solid State Science and Technology ·Chao-Ching Chiang, Xinyi Xia, Jian-Sian Li, F. Ren, S. J. Pearton
7
13
Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga 2 O 3
2022 ·ECS Journal of Solid State Science and Technology ·Xinyi Xia, Jian-Sian Li, Ribhu Sharma, F. Ren, Md Abu Jafar Rasel, Sergei P. Stepanoff, (unknown), Aman Haque, Douglas E. Wolfe, Sushrut Modak, Leonid Chernyak, Mark E. Law, Ani Khachatrian, S. J. Pearton
35
14
Communication—Electron-Beam Stimulated Release of Dislocations from Pinning Sites in GaN
2022 ·ECS Journal of Solid State Science and Technology ·П. С. Вергелес, (unknown), A. Y. Polyakov, E. B. Yakimov, S. J. Pearton
2
15
Band Alignment of Al 2 O 3 on α -(Al x Ga 1-x ) 2 O 3
2022 ·ECS Journal of Solid State Science and Technology ·Xinyi Xia, (unknown), Chaker Fares, Aman Haque, F. Ren, Anna Hassa, Holger von Wenckstern, Marius Grundmann, S. J. Pearton
4
16
Dynamic Switching of 1.9 A/1.76 kV Forward Current NiO/ β -Ga 2 O 3 Rectifiers
2022 ·ECS Journal of Solid State Science and Technology ·Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, (unknown), F. Ren, Yu‐Te Liao, S. J. Pearton
18
17
Threshold Ion Energies and Cleaning of Etch Residues During Inductively Coupled Etching of NiO/Ga 2 O 3 in BCl 3
2022 ·ECS Journal of Solid State Science and Technology ·Chao-Ching Chiang, Xinyi Xia, Jian-Sian Li, F. Ren, S. J. Pearton
5
18
Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al 0.14 Ga 0.86 ) 2 O 3
2018 ·Semiconductor Science and Technology ·Chaker Fares, F. Ren, E. S. Lambers, David C. Hays, (unknown), S. J. Pearton
9
19
Properties and Effects of Hydrogen in GaN
2000 ·MRS Internet Journal of Nitride Semiconductor Research ·S. J. Pearton, H. Cho, F. Ren, Jen‐Inn Chyi, Jung Han, R. G. Wilson
12
20
Dry etching and implant isolation characteristics of AlxGa1-xAs grown by metal organic molecular beam epitaxy
1991 ·Semiconductor Science and Technology ·S. J. Pearton, C. R. Abernathy, F. Ren, T. R. Fullowan
2

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