Christophe Gaquière

5.5k total citations
276 papers, 3.9k citations indexed

About

Christophe Gaquière is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Christophe Gaquière has authored 276 papers receiving a total of 3.9k indexed citations (citations by other indexed papers that have themselves been cited), including 244 papers in Electrical and Electronic Engineering, 177 papers in Condensed Matter Physics and 109 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Christophe Gaquière's work include GaN-based semiconductor devices and materials (177 papers), Radio Frequency Integrated Circuit Design (107 papers) and Semiconductor Quantum Structures and Devices (89 papers). Christophe Gaquière is often cited by papers focused on GaN-based semiconductor devices and materials (177 papers), Radio Frequency Integrated Circuit Design (107 papers) and Semiconductor Quantum Structures and Devices (89 papers). Christophe Gaquière collaborates with scholars based in France, Spain and United Kingdom. Christophe Gaquière's co-authors include Mohammad A. Alim, D. Théron, A.A. Rezazadeh, N. Grandjean, M. Gassoumi, Farid Medjdoub, Y. Crosnier, B. Boudart, E. Kohn and S.L. Delage and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Sensors.

In The Last Decade

Christophe Gaquière

268 papers receiving 3.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Christophe Gaquière France 33 3.1k 2.7k 1.4k 802 588 276 3.9k
R. Quay Germany 31 3.7k 1.2× 3.1k 1.1× 817 0.6× 762 1.0× 454 0.8× 391 4.5k
Niklas Rorsman Sweden 31 2.8k 0.9× 1.8k 0.7× 769 0.6× 532 0.7× 496 0.8× 199 3.2k
Iain Thayne United Kingdom 23 1.5k 0.5× 352 0.1× 751 0.5× 184 0.2× 407 0.7× 174 1.8k
A.M. Campbell United Kingdom 32 965 0.3× 3.6k 1.3× 976 0.7× 1.3k 1.6× 273 0.5× 144 4.1k
Anurag Tyagi United States 24 452 0.1× 1.3k 0.5× 792 0.6× 396 0.5× 506 0.9× 44 1.6k
Edward Beam United States 29 2.0k 0.7× 1.5k 0.6× 980 0.7× 645 0.8× 520 0.9× 117 2.6k
D. Pogány Austria 32 2.7k 0.9× 1.9k 0.7× 556 0.4× 791 1.0× 515 0.9× 208 3.2k
J.A. Higgins United States 23 1.7k 0.5× 752 0.3× 744 0.5× 303 0.4× 196 0.3× 111 2.0k
Yuji Ando Japan 24 1.7k 0.5× 1.2k 0.5× 762 0.6× 502 0.6× 366 0.6× 126 2.1k
Mark Ainslie United Kingdom 32 1.0k 0.3× 2.9k 1.1× 313 0.2× 1.2k 1.4× 178 0.3× 153 3.3k

Countries citing papers authored by Christophe Gaquière

Since Specialization
Citations

This map shows the geographic impact of Christophe Gaquière's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Christophe Gaquière with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Christophe Gaquière more than expected).

Fields of papers citing papers by Christophe Gaquière

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Christophe Gaquière. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Christophe Gaquière. The network helps show where Christophe Gaquière may publish in the future.

Co-authorship network of co-authors of Christophe Gaquière

This figure shows the co-authorship network connecting the top 25 collaborators of Christophe Gaquière. A scholar is included among the top collaborators of Christophe Gaquière based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Christophe Gaquière. Christophe Gaquière is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lacam, C., N. Michel, M. Oualli, et al.. (2024). InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE. Applied Physics Letters. 125(1). 1 indexed citations
2.
Guhel, Y., et al.. (2023). Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers. Microelectronics Reliability. 150. 115156–115156.
3.
Lépilliet, Sylvie, et al.. (2023). A G-Band Packaged Amplified Noise Source Using SiGe BiCMOS 55-nm Technology. IEEE Transactions on Microwave Theory and Techniques. 72(3). 1775–1789. 2 indexed citations
4.
Deniau, Virginie, et al.. (2023). Drone Detection and Tracking Using RF Identification Signals. Sensors. 23(17). 7650–7650. 29 indexed citations
5.
Grégoire, M., et al.. (2023). Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors. Solid-State Electronics. 204. 108654–108654. 1 indexed citations
6.
Alim, Mohammad A., et al.. (2023). Effect of different separation frequencies of the two-tone input signal on the output power of GaN on SiC HEMT. Micro and Nanostructures. 177. 207547–207547. 1 indexed citations
7.
Guhel, Y., et al.. (2022). Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements. IEEE Transactions on Electron Devices. 69(11). 6010–6015.
8.
Duchamp, Jean‐Marc, Manuel J. Barragán, Emmanuel Pistono, et al.. (2021). ESD mm-Wave-Circuit Protection: 3-dB Couplers. IEEE Transactions on Electron Devices. 68(12). 5989–5994. 5 indexed citations
9.
Vincent, Loı̈c, Sylvie Lépilliet, Florence Podevin, et al.. (2020). Design of mm-Wave Slow-Wave-Coupled Coplanar Waveguides. IEEE Transactions on Microwave Theory and Techniques. 68(12). 5014–5028. 9 indexed citations
10.
González, T., Daniel Vaquero, Christophe Gaquière, et al.. (2020). Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes. Nanotechnology. 31(40). 405204–405204. 8 indexed citations
11.
Vincent, Loı̈c, Sylvie Lépilliet, Christophe Gaquière, et al.. (2020). Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band. IEEE Transactions on Electron Devices. 67(6). 2263–2269. 6 indexed citations
12.
Alim, Mohammad A., A.A. Rezazadeh, Christophe Gaquière, & Giovanni Crupi. (2019). Thermal influence on S 22 kink behavior of a 0.15 μ m gate length AlGaN/GaN/SiC HEMT for microwave applications. Semiconductor Science and Technology. 34(3). 35002–35002. 12 indexed citations
13.
Gaquière, Christophe, et al.. (2019). About 250/285 GHz push–push oscillator using differential gate equalisation in digital 65‐nm CMOS. IET Microwaves Antennas & Propagation. 13(12). 2073–2080. 2 indexed citations
14.
Alim, Mohammad A., et al.. (2019). On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT. Semiconductor Science and Technology. 34(7). 75014–75014. 1 indexed citations
15.
Zaknoune, M., Christophe Coinon, E. Peytavit, et al.. (2017). High Performance Heterostructure Low Barrier Diodes for Sub-THz Detection. IEEE Transactions on Terahertz Science and Technology. 7(6). 780–788. 12 indexed citations
16.
Helali, Abdelhamid, et al.. (2016). Small signal modeling of HEMTs AlGaN/GaN/SiC for sensor and high-temperature applications. Optik. 127(19). 7881–7888. 4 indexed citations
17.
Guhel, Y., et al.. (2015). Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs. Microelectronics Reliability. 55(9-10). 1719–1723. 7 indexed citations
18.
Gassoumi, M., et al.. (2010). Electron traps studied in AIGaN/GaN HEMT on Si substrate using capacitance deep level transient spectroscopy. Journal of Optoelectronics and Advanced Materials. 12(11). 2190–2193. 5 indexed citations
19.
Gerbedoen, Jean-Claude, et al.. (2010). AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz. IEEE Transactions on Electron Devices. 57(7). 1497–1503. 24 indexed citations
20.
Medjdoub, Farid, J.‐F. Carlin, M. Gonschorek, et al.. (2006). Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?. HAL (Le Centre pour la Communication Scientifique Directe). 1–4. 139 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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