G. Nataf
Impact in
- Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
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- Ga2O3 and related materials
Papers in
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- GaN-based semiconductor devices and materials 23
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- Ga2O3 and related materials 12
G. Nataf
31 papers receiving 1.1k citations
Peers
Comparison fields: 5 of 28
- Condensed Matter Physics 810
- Electronic, Optical and Magnetic Materials 445
- Materials Chemistry 571
- Atomic and Molecular Physics, and Optics 363
- Mechanics of Materials 191
Countries citing papers authored by G. Nataf
This map shows the geographic impact of G. Nataf's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Nataf with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Nataf more than expected).
Fields of papers citing papers by G. Nataf
This network shows the impact of papers produced by G. Nataf. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Nataf. The network helps show where G. Nataf may publish in the future.
Co-authorship network
The 25 scholars most cited alongside G. Nataf, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2013 | 14 | |
| 2 | 2010 | 12 | |
| 3 | 2010 | 27 | |
| 4 | 2010 | 11 | |
| 5 | 2010 | 43 | |
| 6 | 2010 | 45 | |
| 7 | 2009 | 46 | |
| 8 | 2008 | 7 | |
| 9 | 2007 | 31 | |
| 10 | 2003 | 84 | |
| 11 | 2002 | 1 | |
| 12 | 2001 | 10 | |
| 13 | 1999 | 10 | |
| 14 | 1999 | 445 | |
| 15 | 1998 | 55 | |
| 16 | 1998 | 30 | |
| 17 | 1996 | 12 | |
| 18 | 1994 | 5 | |
| 19 | 1983 | 20 | |
| 20 | A four-cell photovoltaic system based on InP and GaAs | 1982 | 1 |
About G. Nataf
G. Nataf is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Electrical and Electronic Engineering, having authored 31 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (23 papers), Semiconductor Quantum Structures and Devices (15 papers), Ga2O3 and related materials (12 papers), Metal and Thin Film Mechanics (10 papers), solar cell performance optimization (6 papers), ZnO doping and properties (6 papers), Nanowire Synthesis and Applications (5 papers) and Semiconductor materials and devices (4 papers). The work is most often cited by research in Condensed Matter Physics (810 citations), Electronic, Optical and Magnetic Materials (445 citations), Materials Chemistry (571 citations), Atomic and Molecular Physics, and Optics (363 citations) and Mechanics of Materials (191 citations). G. Nataf has collaborated with scholars based in France, Germany and Sweden. Frequent co-authors include B. Beaumont, P. Gibart, F. Sèmond, M. Leroux, N. Grandjean, J. Massies, P. de Mierry, M. Némoz, P. Vennéguès and Sébastien Chenot. Their work appears in journals such as Journal of Crystal Growth, Journal of Applied Physics, Applied Physics Letters, Japanese Journal of Applied Physics and MRS Internet Journal of Nitride Semiconductor Research.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.