G. Nataf

1.3k total citations
31 papers, 1.1k citations indexed

About

G. Nataf is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, G. Nataf has authored 31 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 15 papers in Atomic and Molecular Physics, and Optics and 15 papers in Electrical and Electronic Engineering. Recurrent topics in G. Nataf's work include GaN-based semiconductor devices and materials (23 papers), Semiconductor Quantum Structures and Devices (15 papers) and Ga2O3 and related materials (12 papers). G. Nataf is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Semiconductor Quantum Structures and Devices (15 papers) and Ga2O3 and related materials (12 papers). G. Nataf collaborates with scholars based in France, Germany and Sweden. G. Nataf's co-authors include B. Beaumont, P. Gibart, F. Sèmond, M. Leroux, N. Grandjean, J. Massies, P. de Mierry, M. Némoz, P. Vennéguès and Sébastien Chenot and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics Condensed Matter.

In The Last Decade

G. Nataf

31 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Nataf France 15 810 571 445 402 363 31 1.1k
I. K. Shmagin United States 11 795 1.0× 419 0.7× 389 0.9× 391 1.0× 360 1.0× 16 1.0k
L. Sierzputowski Poland 13 801 1.0× 421 0.7× 376 0.8× 306 0.8× 221 0.6× 17 904
A. E. Nikolaev Russia 18 900 1.1× 460 0.8× 423 1.0× 458 1.1× 266 0.7× 107 1.1k
S. D. Lester United States 13 949 1.2× 508 0.9× 383 0.9× 506 1.3× 486 1.3× 23 1.2k
T. Bretagnon France 19 437 0.5× 431 0.8× 227 0.5× 406 1.0× 474 1.3× 55 952
Shinya Nunoue Japan 15 932 1.2× 435 0.8× 380 0.9× 393 1.0× 479 1.3× 61 1.1k
J. Garczyński Poland 12 766 0.9× 410 0.7× 362 0.8× 289 0.7× 212 0.6× 14 867
G. Kamler Poland 17 781 1.0× 418 0.7× 368 0.8× 350 0.9× 264 0.7× 59 902
T. Böttcher Germany 12 865 1.1× 482 0.8× 394 0.9× 293 0.7× 266 0.7× 33 971
C. A. Tran Canada 19 728 0.9× 461 0.8× 351 0.8× 595 1.5× 650 1.8× 69 1.2k

Countries citing papers authored by G. Nataf

Since Specialization
Citations

This map shows the geographic impact of G. Nataf's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Nataf with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Nataf more than expected).

Fields of papers citing papers by G. Nataf

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Nataf. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Nataf. The network helps show where G. Nataf may publish in the future.

Co-authorship network of co-authors of G. Nataf

This figure shows the co-authorship network connecting the top 25 collaborators of G. Nataf. A scholar is included among the top collaborators of G. Nataf based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Nataf. G. Nataf is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Machhadani, H., Mark Beeler, S. Sakr, et al.. (2013). Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells. Journal of Applied Physics. 113(14). 14 indexed citations
2.
Leroux, M., et al.. (2010). Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth. Nanoscale Research Letters. 5(12). 1878–1881. 12 indexed citations
3.
Dasilva, Yadira Arroyo Rojas, M. P. Chauvat, P. Rutérana, et al.. (2010). Defect structure in heteroepitaxial semipolar (11\bar {2} 2 ) (Ga, Al)N. Journal of Physics Condensed Matter. 22(35). 355802–355802. 27 indexed citations
4.
Das, Aparna, Y. Kotsar, P. Kandaswamy, et al.. (2010). Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dots. Journal of Crystal Growth. 323(1). 161–163. 11 indexed citations
5.
Vennéguès, P., et al.. (2010). Stacking faults blocking process in (11−22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy. Journal of Crystal Growth. 312(19). 2625–2630. 43 indexed citations
6.
Mierry, P. de, et al.. (2010). Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching. Applied Physics Letters. 96(23). 45 indexed citations
7.
Némoz, M., et al.. (2009). Improved semipolar (112¯2) GaN quality using asymmetric lateral epitaxy. Applied Physics Letters. 94(19). 46 indexed citations
8.
Némoz, M., et al.. (2008). Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode. Electronics Letters. 44(3). 231–232. 7 indexed citations
9.
Bougrioua, Z., P. Gibart, E. Calleja, et al.. (2007). Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns. Journal of Crystal Growth. 309(2). 113–120. 31 indexed citations
10.
Bethoux, Jean-Marc, P. Vennéguès, F. Natali, et al.. (2003). Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks. Journal of Applied Physics. 94(10). 6499–6507. 84 indexed citations
11.
Zahraman, K., J. C. Guillaume, G. Nataf, et al.. (2002). Epitaxial lift-off in photovoltaics:ultra thin Al/sub 0.2/Ga/sub 0.8/As cell in a mechanically stacked (Al,Ga)As/Si tandem. 2. 1898–1901. 1 indexed citations
12.
Lahrèche, H., G. Nataf, E. Feltin, B. Beaumont, & P. Gibart. (2001). Growth of GaN on (111) Si: a route towards self-supported GaN. Journal of Crystal Growth. 231(3). 329–334. 10 indexed citations
13.
Leroux, M., N. Grandjean, B. Beaumont, et al.. (1999). Temperature Dependence of Photoluminescence Intensities of Undoped and Doped GaN. physica status solidi (b). 216(1). 605–608. 10 indexed citations
14.
Leroux, M., N. Grandjean, B. Beaumont, et al.. (1999). Temperature quenching of photoluminescence intensities in undoped and doped GaN. Journal of Applied Physics. 86(7). 3721–3728. 445 indexed citations
15.
Beaumont, B., M. Vaille, G. Nataf, et al.. (1998). Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 3. 55 indexed citations
16.
17.
Omnès, F., et al.. (1996). Substrate free GaAs photovoltaic cells on Pd-coated silicon with a 20% AM1.5 efficiency. IEEE Transactions on Electron Devices. 43(11). 1806–1811. 12 indexed citations
18.
Zahraman, K., et al.. (1994). High-Efficiency Al0.2Ga0.8As/Si Stacked Tandem Solar Cells Using Epitaxial Lift-Off. Japanese Journal of Applied Physics. 33(10R). 5807–5807. 5 indexed citations
19.
Beaumont, B., G. Nataf, J. C. Guillaume, & C. Vèrié. (1983). Low temperature photoluminescence of n-type GaInAsP layers grown on InP by liquid phase epitaxy. Journal of Applied Physics. 54(9). 5363–5368. 20 indexed citations
20.
Beaumont, B., G. Nataf, Frédéric Raymond, & C. Vèrié. (1982). A four-cell photovoltaic system based on InP and GaAs. Photovoltaic Specialists Conference. 595. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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