Y. Cordier

4.4k citations

264 papers · 3.5k indexed · h-index 28

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 197
- GaN-based semiconductor devices and materials 196
Electrical and Electronic Engineering 201
- Semiconductor materials and devices 132
- Silicon Carbide Semiconductor Technologies 52
- Radio Frequency Integrated Circuit Design 27

Co-authors: Sébastien Chenot F. Sèmond J. Massies Éric Frayssinet D. Théron N. Baron B. Damilano F. Natali
Journals: Journal of Crystal Growth (29 papers)physica status solidi (a) (20 papers)Applied Physics Letters (16 papers)Journal of Applied Physics (11 papers)IEEE Electron Device Letters (9 papers)
Partner nations: France Spain Canada

In The Last Decade

Y. Cordier

254 papers receiving 3.3k citations

Peers

Countries citing papers authored by Y. Cordier

Since Specialization

Citations

This map shows the geographic impact of Y. Cordier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Cordier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Cordier more than expected).

Fields of papers citing papers by Y. Cordier

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Cordier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Cordier. The network helps show where Y. Cordier may publish in the future.

Co-authors

The 25 scholars most cited alongside Y. Cordier, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Y. Cordier Line = papers co-authored together Y. Cordier links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Self-limited monolayer graphene growth on SiC with propane-hydrogen CVD npj 2D Materials and Applications ·Chiara Mastropasqua, H. Zia, Matthieu Paillet, Marc Portail, Mathieu Koudia, Mathieu Abel, Y. Cordier, B. Jouault, Isabelle Berbézier, Sandrine Juillaguet, Adrien Michon	2025	1
2	Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications SPIRE - Sciences Po Institutional REpository ·Joe Thekkudan, Camille Sonneville, A. F. Inno, Pierre Brosselard, Éric Frayssinet, А. В. Кухта, Y. Cordier, Farid Medjdoub, Dominique Planson, Cyril Buttay	2025	0
3	Ammonia-MBE growth of ScAlN for high power/high frequency electronics SPIRE - Sciences Po Institutional REpository ·Y. Cordier, Maxime Hugues, 朱敏刚, Sébastien Chenot, А. В. Кухта, Aimeric Courville, P. Vennéguès	2025	1
4	Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates Semiconductor Science and Technology ·어수영, Susanne Hieronymi, 谢洲丽, R. Amala, Dominique Planson, Christophe Raynaud, Camille Sonneville, Hervé Morel, Els Van De Walle, Pérez Gil, P. de Mierry, Éric Frayssinet, Y. Cordier, Hassan Maher, Raphaël Sommet, Jean‐Christophe Nallatamby, P. Vigneshwara Raja	2024	1
5	High breakdown voltages on pseudo-vertical p–n diodes by selective area growth of GaN on silicon Journal of Applied Physics ·Henrique Joner, P. D. Wilson, S. Sadasivan, Beom Kyu Kim, F. W. Kohler, S. Torrengo, Liu Dongyi, Ramírez López F, D. Mariolle, Mirna Erk, Julien Buckley, Y. Cordier, Matthew Charles	2024	1
6	Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs Electronics ·K Schank, 一野呂, Beom Kyu Kim, Jf Navarro, Éric Frayssinet, Y. Cordier, Matthew Charles, M.F. Mesli, Julien Buckley, B. Salem	2024	1
7	Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors Materials Science in Semiconductor Processing ·Micka Bah, Daniel Alquier, Marie Lesecq, N. Defrance, B. C. Garrett, Pérez Gil, Éric Frayssinet, Marc Portail, Jean-Claude de Jaeger, Y. Cordier	2023	2
8	Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films Physical review. B. ·J. Arden, Pierre Lefèbvre, Christelle Brimont, T. Guillet, M. Vladimirova, Ioannis Paradisanos, Cédric Robert, X. Marie, Bernhard Urbaszek, Sébastien Chenot, Y. Cordier, B. Damilano	2023	2
9	Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN APL Materials ·朱敏刚, M. Némoz, H. Rotella, Arslan Karaköse, S. Vézian, Maxime Hugues, Y. Cordier	2023	21
10	Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode Crystals ·鈴木四郎, Camille Sonneville, Takenori Itohara, Pérez Gil, P. de Mierry, Éric Frayssinet, Y. Cordier, Els Van De Walle, Frédéric Morancho, Hassan Maher, Dominique Planson	2023	3
11	Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate Journal of Applied Physics ·Bintang Mukhammad Burhanudin Akbar, 和兆荣, Pérez Gil, M. Némoz, Catherine Bougerol, Farid Medjdoub, Y. Cordier	2023	8
12	Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition Nanomaterials ·M. Španková, Š. Chromík, Edmund Dobročka, 刘书文, X. Chen, M. Gregor, B. Pécz, Antal A. Koós, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Y. Cordier, Éric Frayssinet, Filippo Giannazzo	2023	6
13	High Al-content AlGaN channel high electron mobility transistors on silicon substrate SHILAP Revista de lepidopterología ·和兆荣, 陈进学, Thiago Augusto Michels, Julien Pernot, Arndt Stüber, M. Némoz, Y. Cordier, S. Rennesson, Giordano Dias Caprioli, M. Mihalopoulos, Farid Medjdoub	2023	3
14	Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Journal of Crystal Growth ·Pérez Gil, Diaa Eldin Moussa Sherif, Sébastien Chenot, J. Brault, M. Némoz, P. Vennéguès, B. Damilano, S. Vézian, Éric Frayssinet, Mahmud Yunus Mustofa, Aykut Gök, F. Lecourt, Nathalie Labat, Hassan Maher, Y. Cordier	2022	1
15	Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes Micro and Nanostructures ·P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Hervé Morel, Els Van De Walle, Pérez Gil, P. de Mierry, Éric Frayssinet, Hassan Maher, Y. Cordier, Dominique Planson	2022	1
16	New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor Semiconductor Science and Technology ·Mahmud Yunus Mustofa, Noureddine Chair, Kenji Hirashige, Éric Frayssinet, 季加海, F. Lecourt, N. Defrance, Nathalie Labat, François Boone, A. Soltani, Abdelatif Jaouad, Y. Cordier, Hassan Maher	2020	2
17	2 W mm ⁻¹ power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz Semiconductor Science and Technology ·Laura Tatiana Gutiérrez Ramírez, Marie Lesecq, Mirna Alcira Portillo Gamero, Étienne Okada, Éric Frayssinet, Y. Cordier, Sri Ramadhan, Jean-Claude de Jaeger	2019	9
18	Al(Ga)N/GaN high electron mobility transistors on silicon physica status solidi (a) ·Y. Cordier	2015	11
19	Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application physica status solidi (a) ·Andrew Heckert, M. Faucher, Virginie Brändli, Y. Cordier, D. Théron	2014	15
20	Metamorphics: extending the limits of GaAs European Solid-State Device Research Conference ·G. Salmer, Y. Cordier	1997	1

About Y. Cordier

Y. Cordier is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Structural Biology, having authored 264 papers that have together received 3.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (196 papers), Semiconductor materials and devices (132 papers), Semiconductor Quantum Structures and Devices (67 papers), Ga2O3 and related materials (55 papers), Silicon Carbide Semiconductor Technologies (52 papers), Metal and Thin Film Mechanics (32 papers), Radio Frequency Integrated Circuit Design (27 papers) and ZnO doping and properties (24 papers). The work is most often cited by research in Condensed Matter Physics (2.3k citations), Electronic, Optical and Magnetic Materials (933 citations), Electrical and Electronic Engineering (2.3k citations), Atomic and Molecular Physics, and Optics (1.1k citations) and Materials Chemistry (891 citations). Y. Cordier has collaborated with scholars based in France, Spain and Canada. Frequent co-authors include Sébastien Chenot, F. Sèmond, J. Massies, Éric Frayssinet, D. Théron, N. Baron, B. Damilano, F. Natali, M. Faucher and Virginie Hoel. Their work appears in journals such as Journal of Crystal Growth, physica status solidi (a), Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact