M. Teisseire

821 total citations
33 papers, 672 citations indexed

About

M. Teisseire is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Condensed Matter Physics. According to data from OpenAlex, M. Teisseire has authored 33 papers receiving a total of 672 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Materials Chemistry, 18 papers in Electronic, Optical and Magnetic Materials and 12 papers in Condensed Matter Physics. Recurrent topics in M. Teisseire's work include Ga2O3 and related materials (18 papers), ZnO doping and properties (15 papers) and GaN-based semiconductor devices and materials (12 papers). M. Teisseire is often cited by papers focused on Ga2O3 and related materials (18 papers), ZnO doping and properties (15 papers) and GaN-based semiconductor devices and materials (12 papers). M. Teisseire collaborates with scholars based in France, Poland and Spain. M. Teisseire's co-authors include J.‐M. Chauveau, C. Morhain, B. Vinter, C. Deparis, G. Neu, P. Vennéguès, J. Zúñiga‐Pérez, M. Laügt, Dimitri Tainoff and Éric Frayssinet and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. Teisseire

33 papers receiving 655 citations

Peers

M. Teisseire

EOMM

CMP

EEE

AMPO

Xiaoyu Zhao China

Wu‐Yih Uen Taiwan

Ke Sun China

Chris I. Harris Sweden

Sining Mao United States

D. Morecroft United States

S. R. Krishnakumar India

Haiyu Lu United States

Tina Sebastian India

Nilamani Behera India

Xiaoyu Zhao China

M. Teisseire

247 ×0.5

162 ×0.5

EOMM

357 ×1.3

CMP

184 ×0.7

EEE

125 ×1.0

AMPO

Citations per year, relative to M. Teisseire M. Teisseire (= 1×) peers Xiaoyu Zhao

Countries citing papers authored by M. Teisseire

Since Specialization

Citations

This map shows the geographic impact of M. Teisseire's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Teisseire with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Teisseire more than expected).

Fields of papers citing papers by M. Teisseire

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Teisseire. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Teisseire. The network helps show where M. Teisseire may publish in the future.

Co-authorship network of co-authors of M. Teisseire

This figure shows the co-authorship network connecting the top 25 collaborators of M. Teisseire. A scholar is included among the top collaborators of M. Teisseire based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Teisseire. M. Teisseire is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Coulon, Pierre‐Marie, M. Mexis, M. Teisseire, et al.. (2014). Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties. Journal of Applied Physics. 115(15). 45 indexed citations

Courville, Aimeric, M. Teisseire, M. J. Rashid, et al.. (2013). Imaging and counting threading dislocations in c-oriented epitaxial GaN layers. Semiconductor Science and Technology. 28(3). 35006–35006. 34 indexed citations

Chauveau, J.‐M., M. Teisseire, M. Némoz, et al.. (2013). Built-in electric field in ZnO based semipolar quantum wells grown on (101¯2) ZnO substrates. Applied Physics Letters. 103(26). 11 indexed citations

Chauveau, J.‐M., et al.. (2011). Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells. Journal of Applied Physics. 109(10). 19 indexed citations

Brault, J., M. Némoz, M. Teisseire, et al.. (2011). Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1−xMgxO layers by molecular beam epitaxy. Applied Physics Letters. 99(26). 1 indexed citations

Bretagnon, T., B. Gil, A. V. Kavokin, et al.. (2011). Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells. Physical Review B. 84(16). 65 indexed citations

Chauveau, J.‐M., et al.. (2010). Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates. Applied Physics Letters. 97(8). 62 indexed citations

Low‐Kam, Cécile, Anne Laurent, & M. Teisseire. (2008). Detection of Sequential Outliers Using a Variable Length Markov Model. HAL (Le Centre pour la Communication Scientifique Directe). 571–576. 3 indexed citations

Chauveau, J.‐M., J. Zúñiga‐Pérez, M. Laügt, et al.. (2008). Residual strain in nonpolar a-plane Zn1−xMgxO (<x<0.55) and its effect on the band structure of (Zn,Mg)O/ZnO quantum wells. Applied Physics Letters. 93(23). 28 indexed citations

10.

Morhain, C., M. Teisseire, Frédéric Raymond, et al.. (2002). Spectroscopy of Excitons, Bound Excitons and Impurities in h-ZnO Epilayers. physica status solidi (b). 229(2). 881–885. 34 indexed citations

11.

Seghier, D., H. P. Gíslason, C. Morhain, et al.. (2002). Self-Compensation of the Phosphorus Acceptor in ZnSe. physica status solidi (b). 229(1). 251–255. 1 indexed citations

12.

Neu, G., M. Teisseire, Ph. Lemasson, et al.. (2001). Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors. Physica B Condensed Matter. 302-303. 39–53. 14 indexed citations

13.

Teisseire, M., G. Neu, & C. Morhain. (2001). Donor and Donor Bound Exciton Spectroscopy in Wurtzite GaN Heterostructures. physica status solidi (b). 228(2). 501–504. 1 indexed citations

14.

Khan, M. Asif, J. Yang, W. Knap, et al.. (2000). GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates. Applied Physics Letters. 76(25). 3807–3809. 85 indexed citations

15.

Neu, G., E. Tournié, C. Morhain, M. Teisseire, & J. P. Faurie. (2000). Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular-beam epitaxy. Physical review. B, Condensed matter. 61(23). 15789–15796. 18 indexed citations

16.

Neu, G., et al.. (1999). Donor–acceptor-pair spectroscopy of GaAs grown in space ultravacuum. Applied Physics Letters. 74(22). 3341–3343. 2 indexed citations

17.

Neu, G., M. Teisseire, B. Beaumont, H. Lahrèche, & P. Gibart. (1999). Near-Band Gap Selective Photoluminescence in Wurtzite GaN. physica status solidi (b). 216(1). 79–83. 11 indexed citations

18.

Barrio, Marı́a, J. Font, J. Muntasell, et al.. (1992). Binary system neopentylglycol/pentaerythritol. Journal de Chimie Physique. 89. 695–705. 13 indexed citations

19.

Teisseire, M., et al.. (1991). Crystal Data and Solid-Liquid Transformation Study by DSC of 2 Hydroxymethyl-2 methyl-1,3 propanediol tetrahydrate. Powder Diffraction. 6(4). 190–193. 1 indexed citations

20.

Teisseire, M., et al.. (1991). Nucleation of sodium acetate trihydrate in thermal heat storage cycles. Solar Energy. 46(2). 97–100. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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