P. Lorenzini

1.7k total citations
63 papers, 1.4k citations indexed

About

P. Lorenzini is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, P. Lorenzini has authored 63 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Condensed Matter Physics, 38 papers in Electrical and Electronic Engineering and 23 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in P. Lorenzini's work include GaN-based semiconductor devices and materials (39 papers), Semiconductor materials and devices (26 papers) and Ga2O3 and related materials (20 papers). P. Lorenzini is often cited by papers focused on GaN-based semiconductor devices and materials (39 papers), Semiconductor materials and devices (26 papers) and Ga2O3 and related materials (20 papers). P. Lorenzini collaborates with scholars based in France, Poland and United States. P. Lorenzini's co-authors include J. Massies, N. Grandjean, P. Gibart, B. Beaumont, M. Leroux, F. Sèmond, P. Vennéguès, M. Laügt, Y. Cordier and Jean-Lοuis Robert and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

P. Lorenzini

62 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Lorenzini France 19 1.1k 701 582 450 450 63 1.4k
D. Uffmann Germany 8 628 0.6× 252 0.4× 294 0.5× 164 0.4× 430 1.0× 14 822
Shigeru Nakagawa United States 17 541 0.5× 850 1.2× 198 0.3× 617 1.4× 262 0.6× 75 1.4k
C. S. Chang Taiwan 11 952 0.9× 531 0.8× 345 0.6× 784 1.7× 447 1.0× 22 1.4k
J.A. Roussos United States 18 1.1k 1.1× 974 1.4× 498 0.9× 290 0.6× 320 0.7× 49 1.3k
J. R. Lothian United States 24 658 0.6× 1.5k 2.2× 254 0.4× 647 1.4× 347 0.8× 112 1.8k
Marianne Germain Belgium 23 1.6k 1.5× 1.3k 1.8× 744 1.3× 366 0.8× 417 0.9× 93 1.8k
T. Kikkawa Japan 22 1.3k 1.2× 1.3k 1.8× 498 0.9× 334 0.7× 258 0.6× 80 1.6k
C. Monier United States 18 427 0.4× 781 1.1× 202 0.3× 504 1.1× 191 0.4× 71 986
T. J. Schmidt United States 17 728 0.7× 478 0.7× 312 0.5× 520 1.2× 322 0.7× 48 1.1k
Meredith Reed United States 11 704 0.6× 244 0.3× 609 1.0× 222 0.5× 776 1.7× 43 1.1k

Countries citing papers authored by P. Lorenzini

Since Specialization
Citations

This map shows the geographic impact of P. Lorenzini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Lorenzini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Lorenzini more than expected).

Fields of papers citing papers by P. Lorenzini

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Lorenzini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Lorenzini. The network helps show where P. Lorenzini may publish in the future.

Co-authorship network of co-authors of P. Lorenzini

This figure shows the co-authorship network connecting the top 25 collaborators of P. Lorenzini. A scholar is included among the top collaborators of P. Lorenzini based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Lorenzini. P. Lorenzini is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Muller, Fabrice, et al.. (2012). Reconfiguration time overhead on field programmable gate arrays: reduction and cost model. IET Computers & Digital Techniques. 6(2). 105–113. 14 indexed citations
2.
Tauk, R., J. Łusakowski, W. Knap, et al.. (2007). Low electron mobility of field-effect transistor determined by modulated magnetoresistance. Journal of Applied Physics. 102(10). 7 indexed citations
3.
Cordier, Y., P. Lorenzini, Maxime Hugues, et al.. (2006). Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates. Journal de Physique IV (Proceedings). 132. 365–368. 4 indexed citations
4.
Lourdudoss, S., et al.. (2006). Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire. Thin Solid Films. 515(2). 705–707. 31 indexed citations
5.
Joblot, S., F. Sèmond, Y. Cordier, P. Lorenzini, & J. Massies. (2005). High-electron-mobility AlGaN∕GaN heterostructures grown on Si(001) by molecular-beam epitaxy. Applied Physics Letters. 87(13). 27 indexed citations
6.
Bougrioua, Z., M. Azize, P. Lorenzini, M. Laügt, & H. Haas. (2005). Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE. physica status solidi (a). 202(4). 536–544. 56 indexed citations
7.
Contreras, Sylvie, L. Kończewicz, P. Lorenzini, et al.. (2005). High temperature electrical investigations of (Al,Ga)N/GaN heterostructures – Hall sensor applications. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(4). 1438–1443. 15 indexed citations
8.
Mierry, P. de, Z. Bougrioua, O. Tottereau, et al.. (2005). Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes. Journal of Crystal Growth. 285(4). 450–458. 7 indexed citations
9.
Knap, W., Vladimir I. Fal’ko, Éric Frayssinet, et al.. (2004). Spin and interaction effects in Shubnikov–de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures. Journal of Physics Condensed Matter. 16(20). 3421–3432. 18 indexed citations
10.
Morhain, C., M. Teisseire, Frédéric Raymond, et al.. (2002). Spectroscopy of Excitons, Bound Excitons and Impurities in h-ZnO Epilayers. physica status solidi (b). 229(2). 881–885. 34 indexed citations
11.
Knap, W., E. Borovitskaya, M. S. Shur, et al.. (2002). Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures. Applied Physics Letters. 80(7). 1228–1230. 45 indexed citations
12.
Frayssinet, Éric, W. Knap, P. Lorenzini, et al.. (2000). High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates. Applied Physics Letters. 77(16). 2551–2553. 108 indexed citations
13.
Lahrèche, H., P. Vennéguès, O. Tottereau, et al.. (2000). Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111). Journal of Crystal Growth. 217(1-2). 13–25. 82 indexed citations
14.
Brunet, Paul, et al.. (1999). Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice. Applied Physics Letters. 75(21). 3345–3347. 9 indexed citations
15.
Beaumont, B., S. Haffouz, P. Gibart, et al.. (1997). Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy. Materials Science and Engineering B. 50(1-3). 296–301. 2 indexed citations
16.
Calleja, E., F.J. Sánchez, Durga Basak, et al.. (1997). Yellow luminescence and related deep states in undoped GaN. Physical review. B, Condensed matter. 55(7). 4689–4694. 173 indexed citations
17.
Haffouz, S., B. Beaumont, M. Leroux, et al.. (1997). p-doping of GaN by MOVPE. MRS Internet Journal of Nitride Semiconductor Research. 2. 24 indexed citations
18.
Beaumont, B., M. Vaille, P. Lorenzini, et al.. (1996). Alternative N precursors and Mg doped GaN grown by MOVPE. MRS Internet Journal of Nitride Semiconductor Research. 1. 15 indexed citations
19.
Mosser, V., Sylvie Contreras, P. Lorenzini, & Jean-Lοuis Robert. (1993). Energy Shifts Due to the Local Environment of DX Centers in Al<sub>x</sub> Ga<sub>1-x</sub> As:Si. Materials science forum. 143-147. 1117–1122. 6 indexed citations
20.
Lorenzini, P., et al.. (1992). Characterization of a new device for pressure sensing: the AlGaAs/GaAs TEGFET. Sensors and Actuators A Physical. 33(1-2). 53–56. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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