P. Lorenzini

1.7k citations

63 papers · 1.4k indexed · h-index 19

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 39
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 20
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 15
- Quantum and electron transport phenomena 9
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 26
- Advancements in Semiconductor Devices and Circuit Design 10
- Silicon Carbide Semiconductor Technologies 7
Materials Chemistry top 10%
- ZnO doping and properties 16

Co-authors: J. Massies N. Grandjean P. Gibart B. Beaumont M. Leroux F. Sèmond P. Vennéguès M. Laügt
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters (7 papers)Semiconductor Science and Technology (7 papers)Journal of Crystal Growth (6 papers)
Partner nations: France Poland United States

In The Last Decade

P. Lorenzini

62 papers receiving 1.3k citations

Peers

Countries citing papers authored by P. Lorenzini

Since Specialization

Citations

This map shows the geographic impact of P. Lorenzini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Lorenzini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Lorenzini more than expected).

Fields of papers citing papers by P. Lorenzini

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Lorenzini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Lorenzini. The network helps show where P. Lorenzini may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P. Lorenzini, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Lorenzini Line = papers co-authored together P. Lorenzini links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Reconfiguration time overhead on field programmable gate arrays: reduction and cost model IET Computers & Digital Techniques ·Yvonne B. Ferguson,Fabrice Muller,P. Lorenzini	2012	14
2	Low electron mobility of field-effect transistor determined by modulated magnetoresistance Journal of Applied Physics ·R. Tauk,J. Łusakowski,W. Knap,Antoine Tiberj,Z. Bougrioua,M. Azize,P. Lorenzini,M. Sakowicz,Mélanie Guibord,C. Fenouillet-Béranger,M. Cassé,C. Gallon,F. Bœuf,T. Skotnicki	2007	7
3	Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates Journal de Physique IV (Proceedings) ·Y. Cordier,P. Lorenzini,Maxime Hugues,F. Sèmond,F. Natali,Z. Bougrioua,J. Massies,Éric Frayssinet,B. Beaumont,P. Gibart,J. P. Faurie	2006	4
4	Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire Thin Solid Films ·Ziquan He,S. Lourdudoss,Henry H. Radamson,Martin Sjödin,P. Lorenzini,D. C. Look	2006	31
5	High-electron-mobility AlGaN∕GaN heterostructures grown on Si(001) by molecular-beam epitaxy Applied Physics Letters ·S. Joblot,F. Sèmond,Y. Cordier,P. Lorenzini,J. Massies	2005	27
6	Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE physica status solidi (a) ·Z. Bougrioua,M. Azize,P. Lorenzini,M. Laügt,H. Haas	2005	56
7	High temperature electrical investigations of (Al,Ga)N/GaN heterostructures – Hall sensor applications Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·D.,Sylvie Contreras,L. Kończewicz,P. Lorenzini,Y. Cordier,C. Skierbiszewski,Jean-Lοuis Robert	2005	15
8	Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes Journal of Crystal Growth ·Joanna DaCunha,P. de Mierry,Lynne Viall,Z. Bougrioua,Hanna Godlewska-Majkowska,O. Tottereau,P. Lorenzini,Sébastien Chenot,Eric Virey,M. Kokta,Jennifer Stone‐Sundberg,Anna Maria Torniai	2005	7
9	Spin and interaction effects in Shubnikov–de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures Journal of Physics Condensed Matter ·W. Knap,Vladimir I. Fal’ko,Éric Frayssinet,P. Lorenzini,N. Grandjean,D. K. Maude,G. Karczewski,B. L. Brandt,Schlotzhauer,I. Grzegory,Ana Alvarruiz Bermejo,P. Prystawko,C. Skierbiszewski,S. Porowski,X. Hu,G. Simin,M. Asif Khan,M. S. Shur	2004	18
10	Spectroscopy of Excitons, Bound Excitons and Impurities in h-ZnO Epilayers physica status solidi (b) ·C. Morhain,M. Teisseire,Ihab G. AL-Shemmari,Simon Brousseau,Frédéric Raymond,P. Lorenzini,Carlos Jiménez Díaz,G. Neu,J. P. Faurie	2002	34
11	Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures Applied Physics Letters ·W. Knap,E. Borovitskaya,M. S. Shur,Leon Hsu,W. Walukiewicz,Éric Frayssinet,P. Lorenzini,N. Grandjean,C. Skierbiszewski,P. Prystawko,M. Leszczyński,I. Grzegory	2002	45
12	High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates Applied Physics Letters ·Éric Frayssinet,W. Knap,P. Lorenzini,N. Grandjean,J. Massies,C. Skierbiszewski,T. Suski,I. Grzegory,S. Porowski,G. Simin,X. Hu,M. Asif Khan,M. S. Shur,R. Gaška,D. K. Maude	2000	108
13	Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111) Journal of Crystal Growth ·H. Lahrèche,P. Vennéguès,O. Tottereau,M. Laügt,P. Lorenzini,M. Leroux,B. Beaumont,P. Gibart	2000	82
14	Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice Applied Physics Letters ·are co-first authors,Paul Brunet,P. Lorenzini,E. Tournié,J. P. Faurie	1999	9
15	Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy Materials Science and Engineering B ·B. Beaumont,S. Haffouz,P. Gibart,M. Leroux,P. Lorenzini,E. Calleja,E. Muñoz	1997	2
16	Yellow luminescence and related deep states in undoped GaN Physical review. B, Condensed matter ·E. Calleja,F.J. Sánchez,Durga Basak,M. A. Sánchez-Garcı́a,E. Muñoz,I. Izpura,F. Calle,J. M. G. Tijero,J. L. Sánchez-Rojas,B. Beaumont,P. Lorenzini,P. Gibart	1997	173
17	p-doping of GaN by MOVPE MRS Internet Journal of Nitride Semiconductor Research ·S. Haffouz,B. Beaumont,M. Leroux,M. Laügt,P. Lorenzini,P. Gibart,L.G. Hubert-Pfalzgraf	1997	24
18	Alternative N precursors and Mg doped GaN grown by MOVPE MRS Internet Journal of Nitride Semiconductor Research ·B. Beaumont,M. Vaille,P. Lorenzini,P. Gibart,T. Boufaden,B. El Jani	1996	15
19	Energy Shifts Due to the Local Environment of DX Centers in Al<sub>x</sub> Ga<sub>1-x</sub> As:Si Materials science forum ·V. Mosser,Sylvie Contreras,P. Lorenzini,Jean-Lοuis Robert	1993	6
20	Characterization of a new device for pressure sensing: the AlGaAs/GaAs TEGFET Sensors and Actuators A Physical ·P. Lorenzini,Gökce Kılınc Ozcan,Jean-Lοuis Robert,V. Mosser,Sylvie Contreras	1992	7

About P. Lorenzini

P. Lorenzini is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 63 papers that have together received 1.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (39 papers), Semiconductor materials and devices (26 papers), Ga2O3 and related materials (20 papers), ZnO doping and properties (16 papers), Semiconductor Quantum Structures and Devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers), Quantum and electron transport phenomena (9 papers) and Silicon Carbide Semiconductor Technologies (7 papers). The work is most often cited by research in Condensed Matter Physics (1.1k citations), Electronic, Optical and Magnetic Materials (582 citations), Atomic and Molecular Physics, and Optics (450 citations), Electrical and Electronic Engineering (701 citations) and Materials Chemistry (450 citations). P. Lorenzini has collaborated with scholars based in France, Poland and United States. Frequent co-authors include J. Massies, N. Grandjean, P. Gibart, B. Beaumont, M. Leroux, F. Sèmond, P. Vennéguès, M. Laügt, Y. Cordier and Jean-Lοuis Robert. Their work appears in journals such as Applied Physics Letters, Semiconductor Science and Technology, Journal of Crystal Growth, physica status solidi (b) and MRS Internet Journal of Nitride Semiconductor Research.

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