M Armstrong

3.1k citations

14 papers · 1.3k indexed · h-index 9

Impact in

Electrical and Electronic Engineering top 5%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
- Silicon and Solar Cell Technologies
Structural Biology top 10%

Papers in

Discrete Mathematics and Combinatorics 1
Electrical and Electronic Engineering 13
- Advancements in Semiconductor Devices and Circuit Design 13
- Semiconductor materials and devices 13
- Integrated Circuits and Semiconductor Failure Analysis 3
- Silicon Carbide Semiconductor Technologies 3

Co-authors: K. Mistry T. Ghani C. Auth Scott E. Thompson M. Bohr A. Murthy S. Sivakumar G. Glass
Journals: IEEE Electron Device Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)Journal of Applied Physics (1 paper)Proceedings of the American Mathematical Society (1 paper)
Partner nations: United States Egypt Greece

In The Last Decade

M Armstrong

14 papers receiving 1.2k citations

Peers

Countries citing papers authored by M Armstrong

Since Specialization

Citations

This map shows the geographic impact of M Armstrong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M Armstrong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M Armstrong more than expected).

Fields of papers citing papers by M Armstrong

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M Armstrong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M Armstrong. The network helps show where M Armstrong may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M Armstrong, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M Armstrong Line = papers co-authored together M Armstrong links everyone, so they are left out of the graph.

All Works

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14 of 14 papers shown

#	Work
1	Implementation of High Power RF Devices with Hybrid Workfunction and OxideThickness in 22nm Low-Power FinFET Technology Qiao Liang, S. Morarka, Said Rami, Qiang Yu, M. Weiß, N. P. Tanshina, M Armstrong, Cheng‐Yong Su, A. I. Pedroso, B. Sell, Yu Zhang	2019	13
2	Design-Technology Co-Optimization of Anti-Fuse Memory on Intel 22nm FinFET Technology Helen Kakounda, S. Kulkarni, Bernadin Dongmo-Ndongson, Zhao Qing-fang, Shahrzad Arshadi, 若井展英, Guannan Liu, M Armstrong, П.Ю. Пушкарев, Tetiana Grechuk, S. Ramey, Uddalak Bhattacharya, B. Sell, Ying Zhang	2019	3
3	Transistor reliability characterization and modeling of the 22FFL FinFET technology Cheng‐Yong Su, M Armstrong, Lei Jiang, Santhosh Kumar, Colin Landon, Title African, Inanc Meric, Benkaddour, Zhao Qing-fang, K. Phoa, B. Sell, BF Scribner, Ketul B. Sutaria, Kevin Ariel Martens-Aguayo, D. Young, S. Ramey	2018	6
4	Distributive Quasi-Ballistic Drift Diffusion Model Including Effects of Stress and High Driving Field IEEE Transactions on Electron Devices ·R. Kotlyar, Rafael Rios, C. Weber, T. Linton, M Armstrong, Kelin J. Kuhn	2015	16
5	Comparison of Junctionless and Conventional Trigate Transistors With $L_{g}$ Down to 26 nm IEEE Electron Device Letters ·R. Rios, مها علي جعفر, M Armstrong, A. Budrevich, Hector Gomez, Rajaram A. Pai, مجید تک روستا, Kelin J. Kuhn	2011	266
6	A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors T. Ghani, M Armstrong, C. Auth, M. Bost, P. Charvát, G. Glass, Thomas Hoffmann, Kevin B. Johnson, C. Kenyon, J. W. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, Meredith N. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, Scott E. Thompson, M. Bohr	2004	378
7	Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology K. Mistry, M Armstrong, C. Auth, S. Cea, Anthony G. Costantini, T. Ghani, Thomas Hoffmann, A. Murthy, J. Sandford, R. Shaheed, K. Zawadzki, Kedong Zhang, Scott E. Thompson, M. Bohr	2004	114
8	Understanding stress enhanced performance in Intel 90nm CMOS technology M.D. Giles, M Armstrong, C. Auth, S. Cea, T. Ghani, Thomas Hoffmann, R. Kotlyar, Philippe Matagne, K. Mistry, Ramune Nagisetty, B. Obradovic, R. Shaheed, L. Shifren, M. Stettler, S. Tyagi, Christina Joseph Mary Susai, C. Weber, K. Zawadzki	2004	21
9	A Logic Nanotechnology Featuring Strained-Silicon IEEE Electron Device Letters ·Scott E. Thompson, M Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman, J. W. Klaus, Zhenqiang Ma, B. McIntyre, A. Murthy, B. Obradovic, L. Shifren, S. Sivakumar, S. Tyagi, T. Ghani, K. Mistry, M. Bohr, Y.A. El-Mansy	2004	389
10	Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors M Armstrong, D.A. Antoniadis, Yinxuan Wang, K. Ismail, F. Stern	2002	4
11	Scalability revisited: 100 nm PD-SOI transistors and implications for 50 nm devices K. Mistry, T. Ghani, M Armstrong, S. Tyagi, P. Packan, Scott E. Thompson, Shaoyong Yu, M. Bohr	2002	8
12	Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors IEEE Transactions on Electron Devices ·Yinxuan Wang, K. Ismail, M Armstrong, D.A. Antoniadis, F. Stern	1996	63
13	Principle of operation and carrier distributions of AlGaAs/GaAs in-plane-gated channels Journal of Applied Physics ·M Armstrong, Steve Heynman, J. Melngailis, D.A. Antoniadis	1995	4
14	Calculating the Fundamental Group of an Orbit Space Proceedings of the American Mathematical Society ·M Armstrong	1982	6

About M Armstrong

M Armstrong is a scholar working on Discrete Mathematics and Combinatorics, Electrical and Electronic Engineering, Geometry and Topology, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 14 papers that have together received 1.3k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (13 papers), Semiconductor materials and devices (13 papers), Nanowire Synthesis and Applications (3 papers), Integrated Circuits and Semiconductor Failure Analysis (3 papers), Silicon Carbide Semiconductor Technologies (3 papers), Quantum and electron transport phenomena (2 papers), Geometric and Algebraic Topology (1 paper) and Advanced Topology and Set Theory (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (1.2k citations), Structural Biology (14 citations), Biomedical Engineering (348 citations), Atomic and Molecular Physics, and Optics (160 citations) and Materials Chemistry (133 citations). M Armstrong has collaborated with scholars based in United States, Egypt and Greece. Frequent co-authors include K. Mistry, T. Ghani, C. Auth, Scott E. Thompson, M. Bohr, A. Murthy, S. Sivakumar, G. Glass, B. McIntyre and J. W. Klaus. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Applied Physics and Proceedings of the American Mathematical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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