P. Storck

729 total citations
43 papers, 512 citations indexed

About

P. Storck is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, P. Storck has authored 43 papers receiving a total of 512 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 12 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in P. Storck's work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Ga2O3 and related materials (9 papers). P. Storck is often cited by papers focused on Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Ga2O3 and related materials (9 papers). P. Storck collaborates with scholars based in Germany, Italy and Poland. P. Storck's co-authors include Thomas Schroeder, P. Zaumseil, A. Giussani, H.‐J. Müssig, G. Weidner, O. Seifarth, Alarich Weiß, J. Da̧browski, Christian Wenger and Markus Andreas Schubert and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

P. Storck

43 papers receiving 483 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Storck Germany 14 361 284 143 106 92 43 512
A. I. Veı̆nger Russia 11 279 0.8× 332 1.2× 272 1.9× 115 1.1× 69 0.8× 67 666
Masakuni Okamoto Japan 11 302 0.8× 296 1.0× 295 2.1× 143 1.3× 96 1.0× 32 610
Alexander N. Chaika Russia 14 230 0.6× 309 1.1× 245 1.7× 70 0.7× 52 0.6× 55 535
P.A. Lane United Kingdom 15 320 0.9× 252 0.9× 174 1.2× 127 1.2× 124 1.3× 35 488
A. Fouzri Tunisia 13 227 0.6× 355 1.3× 124 0.9× 184 1.7× 115 1.3× 40 508
Gustavo R. Paz-Pujalt United States 12 201 0.6× 240 0.8× 116 0.8× 74 0.7× 72 0.8× 20 404
Reinhard Rückamp Germany 10 163 0.5× 394 1.4× 205 1.4× 131 1.2× 115 1.3× 12 539
R. Leitsmann Germany 13 315 0.9× 327 1.2× 209 1.5× 53 0.5× 22 0.2× 33 479
Frederico D. Novaes Brazil 13 474 1.3× 464 1.6× 308 2.2× 103 1.0× 30 0.3× 15 737
Mattias Jansson Sweden 11 144 0.4× 116 0.4× 156 1.1× 67 0.6× 93 1.0× 34 342

Countries citing papers authored by P. Storck

Since Specialization
Citations

This map shows the geographic impact of P. Storck's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Storck with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Storck more than expected).

Fields of papers citing papers by P. Storck

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Storck. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Storck. The network helps show where P. Storck may publish in the future.

Co-authorship network of co-authors of P. Storck

This figure shows the co-authorship network connecting the top 25 collaborators of P. Storck. A scholar is included among the top collaborators of P. Storck based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Storck. P. Storck is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Liu, Yujia, Y. Yamamoto, P. Storck, et al.. (2023). Strain relaxation from annealing of SiGe heterostructures for qubits. Journal of Applied Physics. 134(3). 4 indexed citations
3.
Loo, Roger, Anne Jourdain, Clément Porret, et al.. (2021). Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration. ECS Journal of Solid State Science and Technology. 10(1). 14001–14001. 4 indexed citations
4.
Storck, P., Tobias Schulz, Marvin Hartwig Zoellner, et al.. (2020). Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source. Journal of Applied Physics. 128(21). 7 indexed citations
5.
Sana, P., W. M. Klesse, Giovanni Capellini, et al.. (2020). Carbon related hillock formation and its impact on the optoelectronic properties of GaN/AlGaN heterostructures grown on Si(111). Applied Physics Letters. 116(25). 6 indexed citations
6.
Sana, P., J. Da̧browski, I. Costina, et al.. (2016). Growth of ScN(111) on Sc2O3(111) for GaN integration on Si(111): Experiment and ab-initio calculations. Journal of Applied Physics. 120(13). 2 indexed citations
7.
Richard, Marie‐Ingrid, Marvin Hartwig Zoellner, Gilbert Chahine, et al.. (2015). Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction. ACS Applied Materials & Interfaces. 7(48). 26696–26700. 11 indexed citations
8.
Szyszka, A., Grzegorz Łupina, M. Mazur, et al.. (2014). Enhanced ultraviolet GaN photo-detector response on Si(111) via engineered oxide buffers with embedded Y2O3/Si distributed Bragg reflectors. Applied Physics Letters. 104(1). 21 indexed citations
9.
Da̧browski, J., Michael Lehmann, Tore Niermann, et al.. (2013). Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and theory. Journal of Applied Physics. 113(21). 5 indexed citations
10.
Zaumseil, P., Markus Andreas Schubert, Serdal Okur, et al.. (2012). Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111). Journal of Applied Physics. 111(7). 14 indexed citations
11.
Schroeder, Thomas, A. Giussani, G. Weidner, et al.. (2009). Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper). Microelectronic Engineering. 86(7-9). 1615–1620. 11 indexed citations
12.
Schroeder, Thomas, A. Giussani, J. Da̧browski, et al.. (2009). Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(3). 653–662. 26 indexed citations
13.
Zaumseil, P., A. Giussani, P. Storck, & Thomas Schroeder. (2009). Synchrotron x-ray characterization of structural defects in epi-Ge/Pr2O3/Si(1 1 1) layer stacks. Journal of Physics D Applied Physics. 42(21). 215411–215411. 5 indexed citations
14.
Reiche, Manfred, Cameliu Himcinschi, U. Gösele, et al.. (2007). Strained Silicon-On-Insulator - Fabrication and Characterization. ECS Transactions. 6(4). 339–344. 8 indexed citations
15.
Segal, A.S., et al.. (2005). Kinetics of SiGe chemical vapor deposition from chloride precursors. Journal of Crystal Growth. 287(2). 446–449. 2 indexed citations
16.
Schroeder, Thomas, P. Zaumseil, G. Weidner, et al.. (2005). Structure, twinning behavior, and interface composition of epitaxial Si(111) films on hex-Pr2O3(0001)∕Si(111) support systems. Journal of Applied Physics. 98(12). 21 indexed citations
17.
18.
Storck, P., Norbert Weiden, & Alarich Weiß. (1990). The Bond Sn-Cl in SnIV Complex Salts A2 [(C2H5 )SnCl 5]. A Single Crystal 35Cl NQR Study of Bis(methylammonium)- pentachloroethylstannate, (CH3NH3 )2](C2H5 )SnCl5]. Zeitschrift für Naturforschung A. 45(3-4). 229–236. 2 indexed citations
19.
Storck, P. & Alarich Weiß. (1990). The Correlation between 35Cl NQR and Sn — CI Bond Length in Tin Compounds. Berichte der Bunsengesellschaft für physikalische Chemie. 94(2). 179–185. 9 indexed citations
20.
Storck, P., et al.. (1990). Structure of di(4-picolinium) pentachloro(phenyl)stannate(IV). Acta Crystallographica Section C Crystal Structure Communications. 46(5). 767–770. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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