Ludovic Goux

3.4k total citations
89 papers, 2.1k citations indexed

About

Ludovic Goux is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Ludovic Goux has authored 89 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 85 papers in Electrical and Electronic Engineering, 36 papers in Materials Chemistry and 13 papers in Cellular and Molecular Neuroscience. Recurrent topics in Ludovic Goux's work include Advanced Memory and Neural Computing (76 papers), Ferroelectric and Negative Capacitance Devices (52 papers) and Semiconductor materials and devices (37 papers). Ludovic Goux is often cited by papers focused on Advanced Memory and Neural Computing (76 papers), Ferroelectric and Negative Capacitance Devices (52 papers) and Semiconductor materials and devices (37 papers). Ludovic Goux collaborates with scholars based in Belgium, United Kingdom and Netherlands. Ludovic Goux's co-authors include M. Jurczak, A. Fantini, R. Degraeve, Attilio Belmonte, Gouri Sankar Kar, Wilfried Vandervorst, Sergiu Clima, Dirk J. Wouters, Umberto Celano and B. Govoreanu and has published in prestigious journals such as Nano Letters, ACS Nano and Journal of Applied Physics.

In The Last Decade

Ludovic Goux

88 papers receiving 2.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ludovic Goux Belgium 23 2.0k 586 561 464 104 89 2.1k
Zongliang Huo China 19 1.8k 0.9× 454 0.8× 391 0.7× 318 0.7× 90 0.9× 149 1.9k
Attilio Belmonte Belgium 22 1.7k 0.8× 370 0.6× 423 0.8× 332 0.7× 68 0.7× 94 1.7k
Umesh Chand Singapore 20 1.6k 0.8× 589 1.0× 396 0.7× 429 0.9× 74 0.7× 47 1.8k
Ximeng Guan United States 14 1.6k 0.8× 453 0.8× 367 0.7× 206 0.4× 79 0.8× 34 1.7k
In-Hwan Baek South Korea 12 1.9k 0.9× 658 1.1× 304 0.5× 660 1.4× 126 1.2× 24 2.0k
Seungjae Jung South Korea 25 2.0k 1.0× 517 0.9× 526 0.9× 673 1.5× 40 0.4× 78 2.1k
Seul Ji Song South Korea 28 2.6k 1.3× 753 1.3× 881 1.6× 797 1.7× 46 0.4× 43 2.7k
G. Molas France 25 1.9k 1.0× 531 0.9× 240 0.4× 275 0.6× 168 1.6× 142 2.0k
Chang Bum Lee South Korea 13 2.9k 1.4× 671 1.1× 890 1.6× 838 1.8× 40 0.4× 18 3.0k
Seung Ryul Lee South Korea 11 2.6k 1.3× 541 0.9× 851 1.5× 672 1.4× 30 0.3× 19 2.7k

Countries citing papers authored by Ludovic Goux

Since Specialization
Citations

This map shows the geographic impact of Ludovic Goux's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ludovic Goux with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ludovic Goux more than expected).

Fields of papers citing papers by Ludovic Goux

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ludovic Goux. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ludovic Goux. The network helps show where Ludovic Goux may publish in the future.

Co-authorship network of co-authors of Ludovic Goux

This figure shows the co-authorship network connecting the top 25 collaborators of Ludovic Goux. A scholar is included among the top collaborators of Ludovic Goux based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ludovic Goux. Ludovic Goux is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Eyben, Pierre, A. De Keersgieter, Philippe Matagne, et al.. (2024). Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs. Japanese Journal of Applied Physics. 63(4). 04SP03–04SP03. 1 indexed citations
2.
Minj, Albert, Ankit Nalin Mehta, Thomas Hantschel, et al.. (2024). Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements. ACS Nano. 18(15). 10653–10666. 2 indexed citations
3.
Eyben, Pierre, Goutham Arutchelvan, T. Chiarella, et al.. (2022). Investigation of access resistance components in Si-channel p-FinFET using cascaded devices.. 1 indexed citations
4.
Chai, Zheng, Weidong Zhang, Sergiu Clima, et al.. (2022). Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching. IEEE Electron Device Letters. 43(7). 1061–1064. 9 indexed citations
5.
Opsomer, Karl, Wouter Devulder, Sergiu Clima, et al.. (2021). Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements. Journal of Applied Physics. 130(16). 11 indexed citations
6.
Opsomer, Karl, Thomas Nuytten, Stefanie Sergeant, et al.. (2020). Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2. Journal of Materials Chemistry C. 9(1). 117–126. 11 indexed citations
7.
Garbin, Daniele, Gabriele Luca Donadio, Hubert Hody, et al.. (2020). Carbon-Based Liner for RESET Current Reduction in Self-Heating Phase- Change Memory Cells. IEEE Transactions on Electron Devices. 67(10). 4228–4233. 5 indexed citations
8.
Chai, Zheng, John Marsland, A. Fantini, et al.. (2019). GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator. IEEE Electron Device Letters. 41(2). 228–231. 26 indexed citations
9.
Chai, Zheng, Wei Dong Zhang, J. F. Zhang, et al.. (2018). Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution. IEEE Transactions on Electron Devices. 65(3). 970–977. 9 indexed citations
10.
Belmonte, Attilio, Umberto Celano, Zhe Chen, et al.. (2018). Voltage-controlled reverse filament growth boosts resistive switching memory. Nano Research. 11(8). 4017–4025. 21 indexed citations
11.
Subhechha, Subhali, R. Degraeve, Attilio Belmonte, et al.. (2018). Understanding Endurance in TiN/a-Si/TiOx/TiN RRAM Devices. 1–4. 5 indexed citations
12.
Chai, Zheng, Wei Dong Zhang, J. F. Zhang, et al.. (2018). TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device. IEEE Transactions on Electron Devices. 66(1). 777–784. 15 indexed citations
13.
Celano, Umberto, Ludovic Goux, Karl Opsomer, et al.. (2016). Tuning the switching behavior of conductive-bridge resistive memory by the modulation of the cation-supplier alloys. Microelectronic Engineering. 167. 47–51. 4 indexed citations
14.
Belmonte, Attilio, A. Fantini, A. Redolfi, et al.. (2015). Excellent Roff/Ron ratio and short programming time in Cu/Al2O3‐based conductive‐bridging RAM under low‐current (10 μA) operation. physica status solidi (a). 213(2). 302–305. 12 indexed citations
15.
Fantini, A., Ludovic Goux, R. Degraeve, et al.. (2013). Intrinsic switching variability in HfO2 RRAM: A theoretical and experimental study. 30–33. 11 indexed citations
16.
Celano, Umberto, Ludovic Goux, Karl Opsomer, et al.. (2013). Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices. Nanoscale. 5(22). 11187–11187. 28 indexed citations
17.
Chen, Yang Yin, Ludovic Goux, Sergiu Clima, et al.. (2013). Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM. IEEE Transactions on Electron Devices. 60(3). 1114–1121. 207 indexed citations
18.
Stefano, Francesca De, Valeri Afanas’ev, Michel Houssa, et al.. (2013). Modulation of electron barriers between TiNx and oxide insulators (SiO2, Al2O3) using Ti interlayer. physica status solidi (a). 211(2). 382–388. 3 indexed citations
19.
Chen, Yang Yin, Geoffrey Pourtois, Sergiu Clima, et al.. (2013). Hf Cap Thickness Dependence in Bipolar-Switching TiN\HfO2\Hf\TiN RRAM Device. ECS Transactions. 50(34). 3–9. 7 indexed citations
20.
Lisoni, J. G., Ludovic Goux, Eveline Verleysen, et al.. (2009). Oxidation behavior of Ni thin films: application to NiO-based ReRAM. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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