Ludovic Goux

3.5k citations

90 papers · 2.1k · h-index 24

Impact in

Electrical and Electronic Engineering top 2%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
Polymers and Plastics top 5%
- Transition Metal Oxide Nanomaterials

Papers in

Electrical and Electronic Engineering 86
- Advanced Memory and Neural Computing 77
- Ferroelectric and Negative Capacitance Devices 53
- Semiconductor materials and devices 37
- Advancements in Semiconductor Devices and Circuit Design 5
Materials Chemistry 36
- Phase-change materials and chalcogenides 18
- Electronic and Structural Properties of Oxides 13

Co-authors: M. Jurczak (41 shared papers)A. Fantini (30 shared papers)R. Degraeve (28 shared papers)Attilio Belmonte (31 shared papers)Gouri Sankar Kar (48 shared papers)Sergiu Clima (30 shared papers)Wilfried Vandervorst (15 shared papers)Umberto Celano (15 shared papers)
Journals: IEEE Electron Device Letters (15 papers)IEEE Transactions on Electron Devices (9 papers)Microelectronic Engineering (5 papers)physica status solidi (a) (5 papers)Journal of Applied Physics (3 papers)
Partner nations: Belgium United Kingdom Netherlands

In The Last Decade

Ludovic Goux

88 papers receiving 2.1k citations

Peers

Countries citing papers authored by Ludovic Goux

Since Specialization

Citations

This map shows the geographic impact of Ludovic Goux's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ludovic Goux with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ludovic Goux more than expected).

Fields of papers citing papers by Ludovic Goux

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ludovic Goux. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ludovic Goux. The network helps show where Ludovic Goux may publish in the future.

Co-authors

The 25 scholars most cited alongside Ludovic Goux, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Ludovic Goux Line = papers co-authored together Ludovic Goux links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 90 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices Nano Letters ·Umberto Celano, Ludovic Goux, Attilio Belmonte, Karl Opsomer, Alexis Franquet, Andreas Schulze, Christophe Detavernier, Olivier Richard, H. Bender, M. Jurczak, Wilfried Vandervorst	2014	287
2	Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM IEEE Transactions on Electron Devices ·Yang Yin Chen, Ludovic Goux, Sergiu Clima, B. Govoreanu, R. Degraeve, Gouri Sankar Kar, A. Fantini, G. Groeseneken, Dirk J. Wouters, M. Jurczak	2013	208
3	Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory Nano Letters ·Umberto Celano, Ludovic Goux, R. Degraeve, A. Fantini, Olivier Richard, H. Bender, M. Jurczak, Wilfried Vandervorst	2015	163
4	Improvement of data retention in HfO<inf>2</inf>/Hf 1T1R RRAM cell under low operating current Yang Yin Chen, Masanori Komura, R. Degraeve, B. Govoreanu, Ludovic Goux, A. Fantini, Nagarajan Raghavan, Sergiu Clima, Leqi Zhang, Attilio Belmonte, A. Redolfi, Gouri Sankar Kar, G. Groeseneken, Dirk J. Wouters, M. Jurczak	2013	85
5	Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells IEEE Transactions on Electron Devices ·Ludovic Goux, J. G. Lisoni, Xinpeng Wang, M. Jurczak, Dirk J. Wouters	2009	73
6	A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell IEEE Transactions on Electron Devices ·Attilio Belmonte, Woo‐Sik Kim, Boon Teik Chan, N. Heylen, A. Fantini, Michel Houssa, M. Jurczak, Ludovic Goux	2013	73
7	Understanding of the endurance failure in scaled HfO<inf>2</inf>-based 1T1R RRAM through vacancy mobility degradation Yang Yin Chen, R. Degraeve, Sergiu Clima, B. Govoreanu, Ludovic Goux, A. Fantini, Gouri Sankar Kar, Geoffrey Pourtois, G. Groeseneken, Dirk J. Wouters, M. Jurczak	2012	70
8	Ovonic Threshold‐Switching Ge_xSe_y Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles physica status solidi (RRL) - Rapid Research Letters ·Sergiu Clima, Daniele Garbin, Karl Opsomer, Naga Sruti Avasarala, Wouter Devulder, I. Shlyakhov, Jonas Keukelier, Gabriele Luca Donadio, T. Witters, Shreya Kundu, B. Govoreanu, Ludovic Goux, Christophe Detavernier, Valeri Afanas’ev, Gouri Sankar Kar, Geoffrey Pourtois	2020	66
9	Electrochemical processes and device improvement in conductive bridge RAM cells physica status solidi (a) ·Ludovic Goux, Ilia Valov	2015	58
10	Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices The Journal of Physical Chemistry Letters ·Umberto Celano, Ludovic Goux, Attilio Belmonte, Karl Opsomer, R. Degraeve, Christophe Detavernier, M. Jurczak, Wilfried Vandervorst	2015	58
11	Analysis of Complementary RRAM Switching IEEE Electron Device Letters ·Dirk J. Wouters, Leqi Zhang, A. Fantini, R. Degraeve, Ludovic Goux, Yang Y. Chen, B. Govoreanu, Gouri Sankar Kar, G. Groeseneken, M. Jurczak	2012	53
12	Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory ACS Applied Materials & Interfaces ·Umberto Celano, Jonathan Op de Beeck, Sergiu Clima, Michael Luebben, P. M. Koenraad, Ludovic Goux, Ilia Valov, Wilfried Vandervorst	2017	48
13	Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current Yang Yin Chen, Masanori Komura, R. Degraeve, B. Govoreanu, Ludovic Goux, A. Fantini, Nagarajan Raghavan, Sergiu Clima, Leqi Zhang, Attilio Belmonte, A. Redolfi, Gouri Sankar Kar, G. Groeseneken, Dirk J. Wouters, M. Jurczak	2013	48
14	Postcycling LRS Retention Analysis in HfO₂/Hf RRAM 1T1R Device IEEE Electron Device Letters ·Yang Yin Chen, M. Jurczak, R. Degraeve, B. Govoreanu, Sergiu Clima, Ludovic Goux, A. Fantini, Gouri Sankar Kar, Dirk J. Wouters, G. Groeseneken	2013	42
15	First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device Journal of Applied Physics ·Sergiu Clima, Yang Yin Chen, Chao Yang Chen, Ludovic Goux, B. Govoreanu, R. Degraeve, A. Fantini, M. Jurczak, Geoffrey Pourtois	2016	39
16	Impact of RTN on Pattern Recognition Accuracy of RRAM-Based Synaptic Neural Network IEEE Electron Device Letters ·Zheng Chai, Pedro Freitas, Weidong Zhang, Firas Odai Hatem, J. F. Zhang, John Marsland, B. Govoreanu, Ludovic Goux, Gouri Sankar Kar	2018	39
17	RRAMs based on anionic and cationic switching: a short overview physica status solidi (RRL) - Rapid Research Letters ·Sergiu Clima, Kiroubanand Sankaran, Yang Yin Chen, A. Fantini, Umberto Celano, Attilio Belmonte, Leqi Zhang, Ludovic Goux, B. Govoreanu, R. Degraeve, Dirk J. Wouters, M. Jurczak, Wilfried Vandervorst, Stefan De Gendt, Geoffrey Pourtois	2014	37
18	Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells ACS Applied Materials & Interfaces ·Wouter Devulder, Karl Opsomer, F. C. Seidel, Attilio Belmonte, Robert Müller, Bob De Schutter, H. Bender, Wilfried Vandervorst, Sven Van Elshocht, M. Jurczak, Ludovic Goux, Christophe Detavernier	2013	36
19	Modeling of Copper Diffusion in Amorphous Aluminum Oxide in CBRAM Memory Stack ECS Transactions ·Kiroubanand Sankaran, Ludovic Goux, Sergiu Clima, Maarten A. Mees, J. A. Kittl, M. Jurczak, L. Altimime, Gian‐Marco Rignanese, Geoffrey Pourtois	2012	32
20	Dependence of Switching Probability on Operation Conditions in Ge_xSe_1–xOvonic Threshold Switching Selectors IEEE Electron Device Letters ·Zheng Chai, Weidong Zhang, R. Degraeve, Sergiu Clima, Firas Odai Hatem, J. F. Zhang, Pedro Freitas, John Marsland, A. Fantini, Daniele Garbin, Ludovic Goux, Gouri Sankar Kar	2019	29

About Ludovic Goux

Ludovic Goux is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Cellular and Molecular Neuroscience, Polymers and Plastics and Atomic and Molecular Physics, and Optics, having authored 90 papers that have together received 2.1k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (77 papers), Ferroelectric and Negative Capacitance Devices (53 papers), Semiconductor materials and devices (37 papers), Phase-change materials and chalcogenides (18 papers), Neuroscience and Neural Engineering (13 papers), Electronic and Structural Properties of Oxides (13 papers), Transition Metal Oxide Nanomaterials (11 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.0k citations), Polymers and Plastics (467 citations), Cellular and Molecular Neuroscience (566 citations), Materials Chemistry (594 citations) and Hardware and Architecture (34 citations). Ludovic Goux has collaborated with scholars based in Belgium, United Kingdom and Netherlands. Frequent co-authors include M. Jurczak, A. Fantini, R. Degraeve, Attilio Belmonte, Gouri Sankar Kar, Sergiu Clima, Wilfried Vandervorst, Umberto Celano, Dirk J. Wouters and B. Govoreanu. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Microelectronic Engineering, physica status solidi (a) and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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