Annie Kumar

492 citations

27 papers · 367 indexed · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Photonic and Optical Devices
- Advanced Memory and Neural Computing
Materials Chemistry
- ZnO doping and properties

Papers in ⓘ

Electrical and Electronic Engineering 26
- Semiconductor materials and devices 13
- Photonic and Optical Devices 10
- Advancements in Semiconductor Devices and Circuit Design 7
- Thin-Film Transistor Technologies 7
- Ferroelectric and Negative Capacitance Devices 5
- Advanced Fiber Optic Sensors 4
- Semiconductor Lasers and Optical Devices 4
Atomic and Molecular Physics, and Optics 8
- Semiconductor Quantum Structures and Devices 7

Co-authors: Xiao Gong (23 shared papers)Kaizhen Han (11 shared papers)Chengkuan Wang (9 shared papers)Chen Sun (10 shared papers)Subhranu Samanta (5 shared papers)Shengqiang Xu (7 shared papers)Ying Wu (7 shared papers)Aaron Thean (2 shared papers)
Journals: IEEE Transactions on Electron Devices (5 papers)IEEE Electron Device Letters (3 papers)Optics Express (2 papers)Nano Letters (2 papers)IEEE Transactions on Semiconductor Manufacturing (1 paper)
Partner nations: Singapore United States China

In The Last Decade

Annie Kumar

25 papers receiving 366 citations

Peers

Countries citing papers authored by Annie Kumar

Since Specialization

Citations

This map shows the geographic impact of Annie Kumar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Annie Kumar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Annie Kumar more than expected).

Fields of papers citing papers by Annie Kumar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Annie Kumar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Annie Kumar. The network helps show where Annie Kumar may publish in the future.

Co-authors

The 25 scholars most cited alongside Annie Kumar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Annie Kumar Line = papers co-authored together Annie Kumar links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 27 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO₂ Gate Dielectric and Excellent Uniformity IEEE Electron Device Letters ·Subhranu Samanta, Umesh Chand, Shengqiang Xu, Kaizhen Han, Ying Wu, Chengkuan Wang, Annie Kumar, Hasita Velluri, Yida Li, Xuanyao Fong, Aaron Thean, Xiao Gong	2020	68
2	Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length IEEE Transactions on Electron Devices ·Subhranu Samanta, Kaizhen Han, Chen Sun, Chengkuan Wang, Annie Kumar, Aaron Thean, Xiao Gong	2021	35
3	Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure IEEE Electron Device Letters ·Chen Sun, Zijie Zheng, Kaizhen Han, Subhranu Samanta, Jiuren Zhou, Qiwen Kong, Jishen Zhang, Haiwen Xu, Annie Kumar, Chengkuan Wang, Xiao Gong	2021	34
4	Ge_0.95Sn_0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width Nano Letters ·Yuye Kang, Shengqiang Xu, Kaizhen Han, Eugene Y.-J. Kong, Zhigang Song, Sheng Luo, Annie Kumar, Chengkuan Wang, W. J. Fan, Gengchiau Liang, Xiao Gong	2021	28
5	Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate IEEE Transactions on Electron Devices ·Dian Lei, Kwang Hong Lee, Yi‐Chiau Huang, Wei Wang, Saeid Masudy‐Panah, Sachin Yadav, Annie Kumar, Yuan Dong, Yuye Kang, Shengqiang Xu, Ying Wu, Chuan Seng Tan, Xiao Gong, Yee‐Chia Yeo	2018	27
6	The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs Dian Lei, Kwang Hong Lee, Shuyu Bao, Wei Wang, Saeid Masudy‐Panah, Sachin Yadav, Annie Kumar, Yuan Dong, Yuye Kang, Shengqiang Xu, Ying Wu, Yi‐Chiau Huang, Hua Chung, Schubert S. Chu, Satheesh Kuppurao, Chuan Seng Tan, Xiao Gong, Yee‐Chia Yeo	2017	25
7	Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory IEEE Transactions on Electron Devices ·Chen Sun, Kaizhen Han, Subhranu Samanta, Qiwen Kong, Jishen Zhang, Haiwen Xu, Xinke Wang, Annie Kumar, Chengkuan Wang, Zijie Zheng, Xunzhao Yin, Kai Ni, Xiao Gong	2022	21
8	Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High G_m of 479.5 μS/μm (V_DS of 1 V) and f_T of 18.3 GHz (V_DS of 3 V) 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Chengkuan Wang, Annie Kumar, Kaizhen Han, Chen Sun, Haiwen Xu, Jishen Zhang, Yuye Kang, Qiwen Kong, Zijie Zheng, Yuxuan Wang, Xiao Gong	2022	17
9	Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors IEEE Transactions on Electron Devices ·Qiwen Kong, Long Liu, Zijie Zheng, Chen Sun, Zuopu Zhou, Leming Jiao, Annie Kumar, Rui Shao, Jishen Zhang, Haiwen Xu, Yue Chen, Bich-Yen Nguyen, Xiao Gong	2023	14
10	First Demonstration of BEOL-Compatible 3D Fin-Gate Oxide Semiconductor Fe-FETs 2022 International Electron Devices Meeting (IEDM) ·Qiwen Kong, Long Liu, Zijie Zheng, Chen Sun, Annie Kumar, Rui Shao, Zuopu Zhou, Leming Jiao, Jishen Zhang, Haiwen Xu, Yue Chen, Gan Liu, Dong Zhang, Xiaolin Wang, Bich-Yen Nguyen, Xiao Gong	2022	13
11	Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs IEEE Electron Device Letters ·Yuye Kang, Kaizhen Han, Annie Kumar, Chengkuan Wang, Chen Sun, Zuopu Zhou, Jiuren Zhou, Xiao Gong	2021	12
12	Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer AIP Advances ·David Kohen, Xuan Sang Nguyen, Sachin Yadav, Annie Kumar, Riko I Made, Christopher Heidelberger, Xiao Gong, Kwang Hong Lee, Kenneth Eng Kian Lee, Yee‐Chia Yeo, Soon Fatt Yoon, Eugene A. Fitzgerald	2016	12
13	Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology Journal of Applied Physics ·Saeid Masudy‐Panah, Ying Wu, Dian Lei, Annie Kumar, Yee‐Chia Yeo, Xiao Gong	2018	11
14	Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate IEEE Transactions on Electron Devices ·Sachin Yadav, Kian Hua Tan, Annie Kumar, Kian Hui Goh, Gengchiau Liang, Soon-Fatt Yoon, Xiao Gong, Yee‐Chia Yeo	2016	8
15	First Demonstration of Complementary FinFETs and Tunneling FinFETs Co-Integrated on a 200 mm GeSnOI Substrate: A Pathway towards Future Hybrid Nano-electronics Systems Kaizhen Han, Ying Wu, Yi Chiau Huang, Shengqiang Xu, Annie Kumar, Eugene Y.-J. Kong, Yuye Kang, Jishen Zhang, Chengkuan Wang, Haiwen Xu, Chen Sun, Xiao Gong	2019	8
16	First Demonstration of BEOL-Compatible Ferroelectric TCAM Featuring a-IGZO Fe-TFTs with Large Memory Window of 2.9 V, Scaled Channel Length of 40 nm, and High Endurance of 10 8 Cycles Chen Sun, Kaizhen Han, Subhranu Samanta, Qiwen Kong, Jishen Zhang, Haiwen Xu, Xinke Wang, Annie Kumar, Chengkuan Wang, Zijie Zheng, Xunzhao Yin, Kai Ni, Xiao Gong	2021	8
17	High mobility In<inf>0.30</inf>Ga<inf>0.70</inf>As MOSHEMTs on low threading dislocation density 200 mm Si substrates: A technology enabler towards heterogeneous integration of low noise and medium power amplifiers with Si CMOS Sachin Yadav, Annie Kumar, Xuan Sang Nguyen, Kwang Hong Lee, Zhihong Liu, Weichuan Xing, Saeid Masudy‐Panah, Kenneth Lee, Chuan Seng Tan, Eugene A. Fitzgerald, D.A. Antoniadis, Yee‐Chia Yeo, Xiao Gong	2017	6
18	MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS IEEE Transactions on Semiconductor Manufacturing ·Xuan Sang Nguyen, Sachin Yadav, Kwang Hong Lee, David Kohen, Annie Kumar, Riko I Made, Kenneth Eng Kian Lee, Soo Jin Chua, Xiao Gong, Eugene A. Fitzgerald	2017	5
19	Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs) Optics Express ·Annie Kumar, Shuh–Ying Lee, Sachin Yadav, Kian Hua Tan, Wan Khai Loke, Yuan Dong, Kwang Hong Lee, Satrio Wicaksono, Gengchiau Liang, Soon-Fatt Yoon, D.A. Antoniadis, Yee‐Chia Yeo, Xiao Gong	2017	5
20	Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate Annie Kumar, Shuh–Ying Lee, Sachin Yadav, Kian Hua Tan, Wan Khai Loke, Daosheng Li, Satrio Wicaksono, Gengchiau Liang, Soon-Fatt Yoon, Xiao Gong, D.A. Antoniadis, Yee‐Chia Yeo	2017	3

About Annie Kumar

Annie Kumar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 27 papers that have together received 367 indexed citations. Recurring topics across this work include Semiconductor materials and devices (13 papers), Photonic and Optical Devices (10 papers), Semiconductor Quantum Structures and Devices (7 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Thin-Film Transistor Technologies (7 papers), Ferroelectric and Negative Capacitance Devices (5 papers), Advanced Fiber Optic Sensors (4 papers) and Semiconductor Lasers and Optical Devices (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (351 citations), Materials Chemistry (109 citations), Biomedical Engineering (77 citations), Polymers and Plastics (22 citations) and Atomic and Molecular Physics, and Optics (42 citations). Annie Kumar has collaborated with scholars based in Singapore, United States and China. Frequent co-authors include Xiao Gong, Kaizhen Han, Chengkuan Wang, Chen Sun, Subhranu Samanta, Shengqiang Xu, Ying Wu, Aaron Thean, Yuye Kang and Zijie Zheng. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Optics Express, Nano Letters and IEEE Transactions on Semiconductor Manufacturing.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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