Annie Kumar

492 total citations
27 papers, 367 citations indexed

About

Annie Kumar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Annie Kumar has authored 27 papers receiving a total of 367 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in Annie Kumar's work include Semiconductor materials and devices (13 papers), Photonic and Optical Devices (10 papers) and Semiconductor Quantum Structures and Devices (7 papers). Annie Kumar is often cited by papers focused on Semiconductor materials and devices (13 papers), Photonic and Optical Devices (10 papers) and Semiconductor Quantum Structures and Devices (7 papers). Annie Kumar collaborates with scholars based in Singapore, United States and China. Annie Kumar's co-authors include Xiao Gong, Kaizhen Han, Chengkuan Wang, Chen Sun, Subhranu Samanta, Ying Wu, Shengqiang Xu, Aaron Thean, Yuye Kang and Zijie Zheng and has published in prestigious journals such as Nano Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

Annie Kumar

25 papers receiving 366 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Annie Kumar Singapore 12 351 109 77 42 22 27 367
Chen-Feng Hsu Taiwan 8 188 0.5× 181 1.7× 43 0.6× 34 0.8× 16 0.7× 15 262
Vladimir Pejović Belgium 7 282 0.8× 215 2.0× 71 0.9× 37 0.9× 28 1.3× 16 331
Chengkuan Wang Singapore 9 309 0.9× 125 1.1× 52 0.7× 13 0.3× 27 1.2× 16 320
Po‐Han Fu Taiwan 9 276 0.8× 60 0.6× 97 1.3× 90 2.1× 9 0.4× 19 328
Omar Concepción Germany 10 174 0.5× 122 1.1× 63 0.8× 127 3.0× 15 0.7× 39 270
Sylvain Maine France 9 227 0.6× 125 1.1× 117 1.5× 104 2.5× 18 0.8× 15 335
Gia Vinh Luong Germany 11 489 1.4× 53 0.5× 115 1.5× 28 0.7× 26 1.2× 26 504
Qiwen Kong Singapore 12 396 1.1× 122 1.1× 39 0.5× 21 0.5× 12 0.5× 61 424
Chengji Jin China 12 516 1.5× 236 2.2× 38 0.5× 30 0.7× 11 0.5× 52 541
Himanshu Madan United States 11 355 1.0× 95 0.9× 56 0.7× 89 2.1× 69 3.1× 24 391

Countries citing papers authored by Annie Kumar

Since Specialization
Citations

This map shows the geographic impact of Annie Kumar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Annie Kumar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Annie Kumar more than expected).

Fields of papers citing papers by Annie Kumar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Annie Kumar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Annie Kumar. The network helps show where Annie Kumar may publish in the future.

Co-authorship network of co-authors of Annie Kumar

This figure shows the co-authorship network connecting the top 25 collaborators of Annie Kumar. A scholar is included among the top collaborators of Annie Kumar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Annie Kumar. Annie Kumar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kumar, Annie, Abhitosh Vais, G. Boccardi, et al.. (2024). An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications. VUBIR (Vrije Universiteit Brussel). 940–943.
2.
Ren, Tianhua, Junyong Wang, Kaizhen Han, et al.. (2023). Optical Gain Spectrum and Confinement Factor of a Monolayer Semiconductor in an Ultrahigh-Quality Cavity. Nano Letters. 23(24). 11601–11607. 1 indexed citations
3.
Kong, Qiwen, Long Liu, Zijie Zheng, et al.. (2023). Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors. IEEE Transactions on Electron Devices. 70(4). 2059–2066. 14 indexed citations
4.
Sun, Chen, Kaizhen Han, Subhranu Samanta, et al.. (2022). Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory. IEEE Transactions on Electron Devices. 69(9). 5262–5269. 21 indexed citations
5.
Kong, Qiwen, Long Liu, Zijie Zheng, et al.. (2022). First Demonstration of BEOL-Compatible 3D Fin-Gate Oxide Semiconductor Fe-FETs. 2022 International Electron Devices Meeting (IEDM). 12.3.1–12.3.4. 13 indexed citations
6.
Kang, Yuye, Shengqiang Xu, Kaizhen Han, et al.. (2021). Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width. Nano Letters. 21(13). 5555–5563. 28 indexed citations
7.
Samanta, Subhranu, Kaizhen Han, Chen Sun, et al.. (2021). Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length. IEEE Transactions on Electron Devices. 68(3). 1050–1056. 35 indexed citations
8.
Sun, Chen, Zijie Zheng, Kaizhen Han, et al.. (2021). Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure. IEEE Electron Device Letters. 42(12). 1786–1789. 34 indexed citations
9.
Sun, Chen, Kaizhen Han, Subhranu Samanta, et al.. (2021). First Demonstration of BEOL-Compatible Ferroelectric TCAM Featuring a-IGZO Fe-TFTs with Large Memory Window of 2.9 V, Scaled Channel Length of 40 nm, and High Endurance of 10 8 Cycles. 1–2. 8 indexed citations
10.
Kang, Yuye, Kaizhen Han, Annie Kumar, et al.. (2021). Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs. IEEE Electron Device Letters. 42(10). 1488–1491. 12 indexed citations
11.
Samanta, Subhranu, Umesh Chand, Shengqiang Xu, et al.. (2020). Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity. IEEE Electron Device Letters. 41(6). 856–859. 68 indexed citations
12.
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14.
Lei, Dian, Kwang Hong Lee, Yi‐Chiau Huang, et al.. (2018). Enhanced Germanium-Tin P-Channel FinFET Performance using Post-Metal Anneal. 50–52. 1 indexed citations
15.
Masudy‐Panah, Saeid, Ying Wu, Dian Lei, et al.. (2018). Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology. Journal of Applied Physics. 123(2). 11 indexed citations
16.
Lee, Kwang Hong, David Kohen, Annie Kumar, et al.. (2017). MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS. IEEE Transactions on Semiconductor Manufacturing. 30(4). 456–461. 5 indexed citations
17.
18.
Kumar, Annie, Kian Hua Tan, Wan Khai Loke, et al.. (2017). Enabling low power and high speed OEICs: First monolithic integration of InGaAs n-FETs and lasers on Si substrate. 4. T56–T57. 3 indexed citations
19.
Kumar, Annie, Kian Hua Tan, Wan Khai Loke, et al.. (2017). Monolithic integration of InGaAs n-FETs and lasers on Ge substrate. Optics Express. 25(5). 5146–5146. 1 indexed citations
20.
Tan, Kian Hua, Annie Kumar, Gengchiau Liang, et al.. (2016). Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate. IEEE Transactions on Electron Devices. 64(2). 353–360. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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