Jaesoo Ahn

867 total citations
18 papers, 728 citations indexed

About

Jaesoo Ahn is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Jaesoo Ahn has authored 18 papers receiving a total of 728 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in Jaesoo Ahn's work include Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Semiconductor materials and interfaces (6 papers). Jaesoo Ahn is often cited by papers focused on Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Semiconductor materials and interfaces (6 papers). Jaesoo Ahn collaborates with scholars based in United States, United Kingdom and Israel. Jaesoo Ahn's co-authors include Paul C. McIntyre, M.J.W. Rodwell, Bo Yu, P.M. Asbeck, Yuan Yu, Yuan Taur, M. Eizenberg, R. Winter, Byungha Shin and Hanping Chen and has published in prestigious journals such as ACS Nano, Applied Physics Letters and IEEE Transactions on Electron Devices.

In The Last Decade

Jaesoo Ahn

18 papers receiving 712 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jaesoo Ahn United States 13 680 277 189 62 58 18 728
Yusuke Shuto Japan 14 586 0.9× 301 1.1× 346 1.8× 72 1.2× 114 2.0× 51 836
Wolfgang Goes Austria 21 1.9k 2.8× 240 0.9× 229 1.2× 43 0.7× 50 0.9× 98 2.0k
Mehdi Saremi United States 17 750 1.1× 124 0.4× 297 1.6× 56 0.9× 37 0.6× 27 866
J. Calder United States 5 286 0.4× 331 1.2× 88 0.5× 57 0.9× 129 2.2× 7 437
Srinivas V. Pietambaram United States 10 325 0.5× 392 1.4× 162 0.9× 122 2.0× 186 3.2× 15 566
R. Whig United States 8 290 0.4× 371 1.3× 110 0.6× 71 1.1× 148 2.6× 12 482
K. Sunouchi Japan 13 799 1.2× 208 0.8× 386 2.0× 46 0.7× 69 1.2× 34 1.1k
Zongxia Guo China 9 278 0.4× 321 1.2× 130 0.7× 94 1.5× 140 2.4× 12 492
T. Nigam United States 22 1.3k 2.0× 80 0.3× 191 1.0× 33 0.5× 85 1.5× 58 1.4k
Son Le United States 9 274 0.4× 441 1.6× 117 0.6× 110 1.8× 183 3.2× 24 513

Countries citing papers authored by Jaesoo Ahn

Since Specialization
Citations

This map shows the geographic impact of Jaesoo Ahn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jaesoo Ahn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jaesoo Ahn more than expected).

Fields of papers citing papers by Jaesoo Ahn

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jaesoo Ahn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jaesoo Ahn. The network helps show where Jaesoo Ahn may publish in the future.

Co-authorship network of co-authors of Jaesoo Ahn

This figure shows the co-authorship network connecting the top 25 collaborators of Jaesoo Ahn. A scholar is included among the top collaborators of Jaesoo Ahn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jaesoo Ahn. Jaesoo Ahn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Han, Donghyeon, Chando Park, Jaesoo Ahn, et al.. (2024). Highly Reliable Magnetic Memory-Based Physical Unclonable Functions. ACS Nano. 18(20). 12853–12860. 15 indexed citations
2.
Lin, Xue, Jaesoo Ahn, Xiaodong Wang, et al.. (2018). Process Optimization of Perpendicular Magnetic Tunnel Junction Arrays for Last-Level Cache beyond 7 nm Node. 117–118. 17 indexed citations
3.
Kan, Jimmy J., Chando Park, Jaesoo Ahn, et al.. (2017). A Study on Practically Unlimited Endurance of STT-MRAM. IEEE Transactions on Electron Devices. 64(9). 3639–3646. 72 indexed citations
4.
Taur, Yuan, Hanping Chen, Qian Xie, et al.. (2015). A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors. IEEE Transactions on Electron Devices. 62(3). 813–820. 7 indexed citations
5.
Chen, Hanping, Jaesoo Ahn, Paul C. McIntyre, & Yuan Taur. (2014). Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 32(3). 23 indexed citations
6.
Lin, Xue, Jaesoo Ahn, Jonathan Germain, et al.. (2014). A Self-Aligned Two-Step Reactive Ion Etching Process for Nanopatterning Magnetic Tunnel Junctions on 300 mm Wafers. IEEE Transactions on Magnetics. 50(11). 1–3. 8 indexed citations
7.
Chen, Hanping, Jaesoo Ahn, Paul C. McIntyre, & Yuan Taur. (2013). Comparison of Bulk-Oxide Trap Models: Lumped Versus Distributed Circuit. IEEE Transactions on Electron Devices. 60(11). 3920–3924. 17 indexed citations
8.
Ahn, Jaesoo & Paul C. McIntyre. (2013). Subcutaneous oxidation of In0.53Ga0.47As(100) through ultra-thin atomic layer deposited Al2O3. Applied Physics Letters. 103(25). 6 indexed citations
9.
Ahn, Jaesoo, Tyler Kent, Evgueni Chagarov, et al.. (2013). Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces. Applied Physics Letters. 103(7). 37 indexed citations
10.
Winter, R., Jaesoo Ahn, Paul C. McIntyre, & M. Eizenberg. (2013). New method for determining flat-band voltage in high mobility semiconductors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(3). 101 indexed citations
11.
Ahn, Jaesoo, Byungha Shin, & Paul C. McIntyre. (2012). In Situ As2 Decapping and Atomic Layer Deposition of Al2O3 on n-InGaAs(100). ECS Transactions. 45(4). 183–188. 12 indexed citations
12.
Yu, Yuan, Bo Yu, Jaesoo Ahn, et al.. (2012). A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices. IEEE Transactions on Electron Devices. 59(8). 2100–2106. 124 indexed citations
13.
Chen, Hanping, Yuan Yu, Bo Yu, et al.. (2012). Interface-State Modeling of $\hbox{Al}_{2}\hbox{O}_{3}$ –InGaAs MOS From Depletion to Inversion. IEEE Transactions on Electron Devices. 59(9). 2383–2389. 67 indexed citations
14.
Melitz, Wilhelm, Evgueni Chagarov, Tyler Kent, et al.. (2012). Mechanism of dangling bond elimination on As-rich InGaAs surface. 98. 32.4.1–32.4.4. 5 indexed citations
15.
Holland, M., Xu Li, Gary W. Paterson, et al.. (2011). Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric. IEEE Electron Device Letters. 32(4). 494–496. 34 indexed citations
16.
Yu, Yuan, Lingquan Wang, Bo Yu, et al.. (2011). A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices. IEEE Electron Device Letters. 32(4). 485–487. 147 indexed citations
17.
Ahn, Jaesoo, Marika Gunji, M. Holland, et al.. (2011). Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices. Applied Physics Letters. 99(23). 28 indexed citations
18.
Thayne, Iain, M. Holland, Xu Li, et al.. (2011). III–V nMOSFETs – Some issues associated with roadmap worthiness (invited). Microelectronic Engineering. 88(7). 1070–1075. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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