M. Rödder

1.5k citations

73 papers · 797 indexed · h-index 16

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 63
- Advancements in Semiconductor Devices and Circuit Design 54
- Integrated Circuits and Semiconductor Failure Analysis 16
- Silicon and Solar Cell Technologies 13
- Thin-Film Transistor Technologies 13
- Ferroelectric and Negative Capacitance Devices 12
- Low-power high-performance VLSI design 6
Materials Chemistry
Hardware and Architecture
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 13
Biomedical Engineering

Co-authors: D.A. Antoniadis A. Amerasekera J. A. Kittl Titash Rakshit B. Obradovic S. Aur V. Reddy C. Duvvury
Cited by: Electrical and Electronic Engineering Materials Chemistry Hardware and Architecture
Journals: IEEE Electron Device Letters (15 papers)IEEE Transactions on Electron Devices (4 papers)Microelectronic Engineering (2 papers)
Partner nations: United States South Korea Belgium

In The Last Decade

M. Rödder

69 papers receiving 754 citations

Peers

Countries citing papers authored by M. Rödder

Since Specialization

Citations

This map shows the geographic impact of M. Rödder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Rödder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Rödder more than expected).

Fields of papers citing papers by M. Rödder

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Rödder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Rödder. The network helps show where M. Rödder may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Rödder, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Rödder Line = papers co-authored together M. Rödder links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	SoC Logic Compatible Multi-Bit FeMFET Weight Cell for Neuromorphic Applications Kai Ni,J. A. Smith,Benjamin Grisafe,Titash Rakshit,B. Obradovic,J. A. Kittl,M. Rödder,Suman Datta	2018	103
2	Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates Thin Solid Films ·C. W. Leitz,C.J. Vineis,John A. Carlin,J.G. Fiorenza,G. Braithwaite,R. Westhoff,V. K. Yang,M. Carroll,T. A. Langdo,K. Matthews,Puneet Kohli,M. Rödder,R. Wise,Anthony Lochtefeld	2006	5
3	Degradation of deep sub-micron isolation by vacuum ultraviolet radiation from low temperature back end plasma-assisted processes Sara Cadiñanos Fernández,S. Krishnan,U Wick,M. Rödder,Kelly Taylor,Lan Michelle Tran,I.-C. Chen,M. W. Goodwin,Tingli Tsai	2002	1
4	Transistor design with TCAD tuning and device optimization for process/device synthesis M. Rödder,Amitava Chatterjee,Duane S. Boning,Oluwatoyin Muse Johnson Popoola	2002	2
5	Substrate triggering and salicide effects on ESD performance and protection circuit design in deep submicron CMOS processes A. Amerasekera,C. Duvvury,V. Reddy,M. Rödder	2002	66
6	Oxide thickness dependence of inverter delay and device reliability for 0.25 μm CMOS technology M. Rödder,Shankar S. Iyer,S. Aur,Amitava Chatterjee,Paulette Cooley,R. A. Chapman,Oluwatoyin Muse Johnson Popoola	2002	2
7	Transistor design issues in integrating analog functions with high performance digital CMOS Amitava Chatterjee,K. Vasanth,Jalal A Al-Saad,M. Nandakumar,G. Pollack,Rahul Aggarwal,M. Rödder,H. Shichijo	1999	40
8	Scaled CMOS technologies with low sheet resistance at 0.06-μm gate lengths IEEE Electron Device Letters ·J. A. Kittl,Q. Z. Hong,M. Rödder,Lan Michelle Tran	1998	6
9	Low Temperature Formation of C54 TiSi₂ Bypassing the C49 Phase: Effect of Si Crystallinity, Metallic Impurities and Applications TO 0.10 μm CMOS MRS Proceedings ·J. A. Kittl,Bronwen Rebecca Evans,John D. Allen,Q. Z. Hong,Ning Yu,M. Rödder	1998	2
10	Optimization of Ti and Co Self-Aligned Silicide RTP for 0.10 μm CMOS MRS Proceedings ·J. A. Kittl,Q. Z. Hong,Hsiwen Yang,Ning Yu,M. Rödder,Pushkar P. Apte,Chen Yin,NEO-MAPP Team,Lan Michelle Tran,M. F. Pas	1998	0
11	Feasibility study to determine the suitability of using TiN/W and Si 1-x Ge x as alternative gate materials for sub-0.1-μm gate-length PMOS devices Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·U N Y Chikezie,Jerry C. Hu,Alberto Páez,M. Rödder,Ih-Chin Chen	1998	5
12	Role of silicon surface in the removal of point defects in ultrashallow junctions Applied Physics Letters ·Thiago Costa de Oliveira,S. Banerjee,S. List,M. Rödder	1996	11
13	Physical Characterization of Chemical Mechanical Planarized Surface for Trench Isolation Journal of The Electrochemical Society ·E.V. Belyaeva,M. Rödder,Mohammed Ali Saud Almnasif, Ruqaiya Ali S. Almunasif, Awatif Ghanem Ali Alanazi, Saad Ali Saad Al-Shahrani, Mohammed Hassan Malyosi, Abdulaziz Mohammed Alwabli, Ali Mohammed Abdullah Alshehri, Samar Bakr Mohammed, Amal Abdullah Almalki, Fatima Mohammed Aldussari, Tariq Ahmed Saleh Alghamdi, Yakoub Fysal Alnakhly, Reemah Omar Alhousah, Khaled Abdullah Ahmed Alghamdi, Ahmed Adnan Mohammed Mlibary,Hallyson Leno Lucas,Mohd Naved Naru	1995	10
14	Performance and reliability enhancement for CVD tungsten polycided CMOS transistors due to fluorine incorporation in the gate oxide IEEE Electron Device Letters ·I.-C. Chen,M. Rödder,H.-J. Wann,C. I. Eugene Kim	1994	10
15	Extraction of channel length and junction voltage in n/sup +//n/n/sup +/ or n/sup +//p/n/sup +/ polysilicon resistors IEEE Transactions on Electron Devices ·M. Rödder,مصعب عبد الله حسن زروق	1992	3
16	On/off current ratio in P-channel poly-Si MOSFETs: dependence on hot-carrier stress conditions IEEE Electron Device Letters ·M. Rödder	1990	25
17	Rapid thermal annealing for H passivation of polysilicon MOSFETs from Si3N4 overcoat 杨金宝,Keeseong Park,C. S. Kyono,Shuvajit Bhattacharya,Sanjay K. Banerjee,C.M. Maziar,R. M. Sallee,A.F. Tasch,M. Rödder,R. Sundaresan	1989	2
18	Leakage-current-induced hot-carrier degradation of p-channel MOSFETs IEEE Electron Device Letters ·M. Rödder	1988	20
19	Effects of H⁺implant dose and film deposition conditions on polycrystalline-Si MOSFET characteristics IEEE Electron Device Letters ·M. Rödder,D.A. Antoniadis,F. Scholz,A. Kalnitsky	1987	21
20	Comparison of different techniques for passivation of small-grain polycrystalline-Si MOSFET's IEEE Electron Device Letters ·M. Rödder,D.A. Antoniadis	1985	18

About M. Rödder

M. Rödder is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Nuclear and High Energy Physics and Electronic, Optical and Magnetic Materials, having authored 73 papers that have together received 797 indexed citations. Recurring topics across this work include Semiconductor materials and devices (63 papers), Advancements in Semiconductor Devices and Circuit Design (54 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers), Semiconductor materials and interfaces (13 papers), Silicon and Solar Cell Technologies (13 papers), Thin-Film Transistor Technologies (13 papers), Ferroelectric and Negative Capacitance Devices (12 papers) and Low-power high-performance VLSI design (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (782 citations), Materials Chemistry (161 citations), Hardware and Architecture (20 citations), Atomic and Molecular Physics, and Optics (79 citations) and Biomedical Engineering (59 citations). M. Rödder has collaborated with scholars based in United States, South Korea and Belgium. Frequent co-authors include D.A. Antoniadis, A. Amerasekera, J. A. Kittl, Titash Rakshit, B. Obradovic, S. Aur, V. Reddy, C. Duvvury, S. V. Hattangady and Amitava Chatterjee. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Microelectronic Engineering, Applied Physics Letters and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact