H. C. Lin

1.7k citations

43 papers · 1.4k indexed · h-index 19

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 34
- Advancements in Semiconductor Devices and Circuit Design 20
- Integrated Circuits and Semiconductor Failure Analysis 7
- Ferroelectric and Negative Capacitance Devices 5
- Silicon and Solar Cell Technologies 4
- Photonic and Optical Devices 4
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces 4
Materials Chemistry top 10%
- Electronic and Structural Properties of Oxides 9
Condensed Matter Physics top 10%
Electronic, Optical and Magnetic Materials

Co-authors: G. D. Wilk Yi Xuan Guy Brammertz Marc Meuris Marc Heyns P. D. Ye Peide D. Ye Matty Caymax
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Materials Chemistry
Journals: Applied Physics Letters (16 papers)Microelectronic Engineering (3 papers)Journal of The Electrochemical Society (2 papers)
Partner nations: Belgium United States Germany

In The Last Decade

H. C. Lin

42 papers receiving 1.3k citations

Peers

Countries citing papers authored by H. C. Lin

Since Specialization

Citations

This map shows the geographic impact of H. C. Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. C. Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. C. Lin more than expected).

Fields of papers citing papers by H. C. Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. C. Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. C. Lin. The network helps show where H. C. Lin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside H. C. Lin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. C. Lin Line = papers co-authored together H. C. Lin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Multifunctional Carbon Nanoparticle Interlayer Enables Efficient Hole-Transport-Layer-Free Carbon-Based Perovskite Solar Cells ACS Applied Energy Materials ·H. C. Lin,Zheng Jian Li,Nianqing Fu	2025	1
2	Probing the key roles of the back interface in the performance of carbon-based hole-transport-layer free perovskite solar cells Journal of Materials Chemistry A ·Xinwei Li,Nianqing Fu,Zheng-Guo Xie,H. C. Lin,J.P. Cheng,Ziming Chen,Lin Peng,R. Bostelmann	2024	6
3	A Dual-Band Multi-Beam Dual-Polarized Luneburg Lens Antenna for High-Speed Rail Systems Yuehui Cui,Sigit S. Wibowo,H. C. Lin	2024	0
4	High Mobility In_0.53Ga_0.47As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes IEEE Journal of the Electron Devices Society ·Shinichi Yoshida,Nadine Collaert,Kishanee J Haththotuwegama,Aaron Thean,H. C. Lin,Abhitosh Vais,A. Alian,J. Franco,Salim El Kazzi,Y. Mols,Pranay Penmetsa,R. M. Haertdinova	2017	3
5	Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks Applied Physics Letters ·Abhitosh Vais,J. Franco,H. C. Lin,Nadine Collaert,A. Mocuta,K. De Meyer,Aaron Thean	2015	18
6	Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As Applied Physics Letters ·V. V. Afanas’ev,Bintang Kusuma Nata,Nguyễn Hoàng Thoan,Christoph Adelmann,H. C. Lin,Michel Houssa,A. Stesmans	2012	5
7	Internal Photoemission at Interaces of ALD TaiO_xInsulating Layers Deposited on Si, InP and In_0.53Ga_0.47As IOP Conference Series Materials Science and Engineering ·Bintang Kusuma Nata,V. V. Afanas’ev,Nguyễn Hoàng Thoan,Christoph Adelmann,H. C. Lin,Michel Houssa,A. Stesmans	2012	1
8	Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces Applied Physics Letters ·A. Alian,Guy Brammertz,Clément Merckling,Andrea Firrincieli,Wei Wang,H. C. Lin,Matty Caymax,Marc Meuris,K. De Meyer,Marc Heyns	2011	23
9	Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditions Microelectronic Engineering ·R. J. Gorlin,Guy Brammertz,Niamh Waldron,Clément Merckling,Geert Hellings,H. C. Lin,Renato L. B. Silva,Marc Meuris,Eddy Simoen,K. De Meyer,Marc Heyns	2010	17
10	The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces Applied Physics Letters ·H. C. Lin,Guy Brammertz,Koen Martens,G. de Valicourt,Maria Elisa Ariasca,Wei Wang,Wilman Tsai,Marc Meuris,Marc Heyns	2009	45
11	Characterization of Parylene-N as Flexible Substrate and Passivation Layer for Microwave and Millimeter-Wave Integrated Circuits IEEE Transactions on Advanced Packaging ·Hasan Sharifi,Ernowo Ary F,H. C. Lin,Peide D. Ye,L.P.B. Katehi,Saeed Mohammadi	2009	40
12	Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs Applied Physics Letters ·Yanqing Wu,H. C. Lin,P. D. Ye,G. D. Wilk	2007	23
13	Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics Applied Physics Letters ·H. C. Lin,Phogat Sachin,Dong Chang,Yi Xuan,Saeed Mohammadi,Meredith G. Morehouse,Gang Lü,A. Facchetti,Tobin J. Marks	2007	4
14	High-performance submicron inversion-type enhancement-mode InGaAs MOSFET with maximum drain current of 360 mA/mm and transconductance of 130 mS/mm Yi Xuan,Yanqing Wu,H. C. Lin,Tian Shen,P.D. Ye	2007	3
15	Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric Applied Physics Letters ·H. C. Lin,Tao Yang,Hasan Sharifi,Phogat Sachin,Yi Xuan,Tian Shen,Saeed Mohammadi,Yanic Jost	2007	39
16	Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric Applied Physics Letters ·Yi Xuan,P. D. Ye,H. C. Lin,G. D. Wilk	2006	17
17	Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric Applied Physics Letters ·Yi Xuan,H. C. Lin,P. D. Ye,G. D. Wilk	2006	126
18	Capacitance-Voltage Characterization of Atomic-Layer-Deposited Al2O3/InGaAs and Al2O3/GaAs Metal-Oxide-Semiconductor Structures ECS Transactions ·Peide D. Ye,Yi Xuan,H. C. Lin	2006	5
19	Compositional grading in distributed Bragg reflectors, using discrete alloys, in vertical-cavity surface-emitting lasers Journal of Crystal Growth ·Gregory Pickrell,Guidi Francesco,John Ishvaradas Abdallah,L L Taularides,H. C. Lin,M. Cather Simpson,Peter S. Guilfoyle,K.L. Lear	2005	16
20	Vertical-cavity surface-emitting lasers with monolithically integrated horizontal waveguides IEEE Photonics Technology Letters ·H. C. Lin,Guidi Francesco,Gregory Pickrell,John Ishvaradas Abdallah,L L Taularides,M. Cather Simpson,Peter S. Guilfoyle	2004	7

About H. C. Lin

H. C. Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 43 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (34 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers), Electronic and Structural Properties of Oxides (9 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Ferroelectric and Negative Capacitance Devices (5 papers), Semiconductor materials and interfaces (4 papers), Silicon and Solar Cell Technologies (4 papers) and Photonic and Optical Devices (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.3k citations), Atomic and Molecular Physics, and Optics (458 citations) and Materials Chemistry (443 citations). H. C. Lin has collaborated with scholars based in Belgium, United States and Germany. Frequent co-authors include G. D. Wilk, Yi Xuan, Guy Brammertz, Marc Meuris, Marc Heyns, P. D. Ye, Peide D. Ye, Matty Caymax, Yanqing Wu and Tian Shen. Their work appears in journals such as Applied Physics Letters, Microelectronic Engineering, Journal of The Electrochemical Society, ECS Journal of Solid State Science and Technology and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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