H. C. Lin

1.7k total citations
43 papers, 1.4k citations indexed

About

H. C. Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H. C. Lin has authored 43 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in H. C. Lin's work include Semiconductor materials and devices (34 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Electronic and Structural Properties of Oxides (9 papers). H. C. Lin is often cited by papers focused on Semiconductor materials and devices (34 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Electronic and Structural Properties of Oxides (9 papers). H. C. Lin collaborates with scholars based in Belgium, United States and Germany. H. C. Lin's co-authors include G. D. Wilk, Yi Xuan, Guy Brammertz, Marc Meuris, Marc Heyns, P. D. Ye, Matty Caymax, Peide D. Ye, Yanqing Wu and Tian Shen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

H. C. Lin

42 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. C. Lin Belgium 19 1.3k 458 443 178 111 43 1.4k
А.С. Гудовских Russia 18 820 0.6× 480 1.0× 348 0.8× 253 1.4× 62 0.6× 150 1.0k
Tyler J. Grassman United States 20 1.2k 1.0× 784 1.7× 374 0.8× 294 1.7× 93 0.8× 97 1.4k
Mitsuhisa Ikeda Japan 13 554 0.4× 250 0.5× 406 0.9× 158 0.9× 64 0.6× 110 679
J. J. Bucchignano United States 14 465 0.4× 312 0.7× 186 0.4× 207 1.2× 124 1.1× 35 730
Massimo Longo Italy 19 737 0.6× 374 0.8× 889 2.0× 159 0.9× 81 0.7× 91 1.2k
Hassanet Sodabanlu Japan 14 521 0.4× 423 0.9× 214 0.5× 276 1.6× 149 1.3× 86 744
Kasey J. Russell United States 14 415 0.3× 408 0.9× 325 0.7× 406 2.3× 63 0.6× 38 835
B. L. Sharma India 12 682 0.5× 465 1.0× 392 0.9× 170 1.0× 71 0.6× 51 937
Alexander Luce United States 9 828 0.6× 196 0.4× 1.2k 2.6× 135 0.8× 79 0.7× 16 1.4k
Feifei Qin China 15 471 0.4× 267 0.6× 368 0.8× 226 1.3× 132 1.2× 73 795

Countries citing papers authored by H. C. Lin

Since Specialization
Citations

This map shows the geographic impact of H. C. Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. C. Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. C. Lin more than expected).

Fields of papers citing papers by H. C. Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. C. Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. C. Lin. The network helps show where H. C. Lin may publish in the future.

Co-authorship network of co-authors of H. C. Lin

This figure shows the co-authorship network connecting the top 25 collaborators of H. C. Lin. A scholar is included among the top collaborators of H. C. Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. C. Lin. H. C. Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lin, H. C., Zheng Jian Li, & Nianqing Fu. (2025). Multifunctional Carbon Nanoparticle Interlayer Enables Efficient Hole-Transport-Layer-Free Carbon-Based Perovskite Solar Cells. ACS Applied Energy Materials. 8(19). 14764–14772. 1 indexed citations
2.
Li, Xinwei, Nianqing Fu, H. C. Lin, et al.. (2024). Probing the key roles of the back interface in the performance of carbon-based hole-transport-layer free perovskite solar cells. Journal of Materials Chemistry A. 12(44). 30388–30397. 6 indexed citations
3.
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Yoshida, Shinichi, Nadine Collaert, Aaron Thean, et al.. (2017). High Mobility In0.53Ga0.47As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes. IEEE Journal of the Electron Devices Society. 5(6). 480–484. 3 indexed citations
5.
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Afanas’ev, V. V., Nguyễn Hoàng Thoan, Christoph Adelmann, et al.. (2012). Internal Photoemission at Interaces of ALD TaiOxInsulating Layers Deposited on Si, InP and In0.53Ga0.47As. IOP Conference Series Materials Science and Engineering. 41. 12019–12019. 1 indexed citations
7.
Afanas’ev, V. V., Nguyễn Hoàng Thoan, Christoph Adelmann, et al.. (2012). Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As. Applied Physics Letters. 100(20). 5 indexed citations
8.
Alian, A., Guy Brammertz, Clément Merckling, et al.. (2011). Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces. Applied Physics Letters. 99(11). 23 indexed citations
9.
Brammertz, Guy, Niamh Waldron, Clément Merckling, et al.. (2010). Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditions. Microelectronic Engineering. 88(2). 155–158. 17 indexed citations
10.
Afanas’ev, V. V., et al.. (2010). Electron band alignment between (100)InP and atomic-layer deposited Al2O3. Applied Physics Letters. 97(13). 14 indexed citations
11.
Lin, H. C., Guy Brammertz, Koen Martens, et al.. (2009). The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces. Applied Physics Letters. 94(15). 45 indexed citations
12.
Brammertz, Guy, H. C. Lin, Koen Martens, et al.. (2008). Capacitance-voltage characterization of GaAs–Al2O3 interfaces. Applied Physics Letters. 93(18). 94 indexed citations
13.
Wu, Yanqing, H. C. Lin, P. D. Ye, & G. D. Wilk. (2007). Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs. Applied Physics Letters. 90(7). 23 indexed citations
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Xuan, Yi, P. D. Ye, H. C. Lin, & G. D. Wilk. (2006). Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric. Applied Physics Letters. 89(13). 17 indexed citations
17.
Pickrell, Gregory, et al.. (2005). Compositional grading in distributed Bragg reflectors, using discrete alloys, in vertical-cavity surface-emitting lasers. Journal of Crystal Growth. 280(1-2). 54–59. 16 indexed citations
18.
Lin, H. C., et al.. (2004). Vertical-cavity surface-emitting lasers with monolithically integrated horizontal waveguides. IEEE Photonics Technology Letters. 17(1). 10–12. 7 indexed citations
19.
Pickrell, Gregory, et al.. (2004). VCSELs with monolithic coupling to internal horizontal waveguides using integrated diffraction gratings. Electronics Letters. 40(17). 1064–1065. 20 indexed citations
20.
Pickrell, Gregory, et al.. (2004). Molecular beam epitaxial regrowth on diffraction gratings for vertical-cavity, surface-emitting laser-based integrated optoelectronics. Journal of Applied Physics. 96(8). 4050–4055. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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