Yves Mols

639 total citations
31 papers, 435 citations indexed

About

Yves Mols is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Yves Mols has authored 31 papers receiving a total of 435 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 7 papers in Biomedical Engineering. Recurrent topics in Yves Mols's work include Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). Yves Mols is often cited by papers focused on Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). Yves Mols collaborates with scholars based in Belgium, United States and Netherlands. Yves Mols's co-authors include R. Langer, Bernardette Kunert, Niamh Waldron, Andreas Schulze, Guy Brammertz, Stefan Degroote, Maarten Leys, Matty Caymax, Nadine Collaert and Gustaaf Borghs and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

Yves Mols

27 papers receiving 422 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Yves Mols Belgium	11	402	238	148	72	22	31	435
Pamela Jurczak United Kingdom	12	351 0.9×	282 1.2×	169 1.1×	99 1.4×	23 1.0×	18	424
K. Guilloy France	12	400 1.0×	196 0.8×	171 1.2×	172 2.4×	16 0.7×	20	483
Wen-Yen Chen Taiwan	9	271 0.7×	337 1.4×	106 0.7×	124 1.7×	27 1.2×	14	384
M. Carroll United States	13	502 1.2×	265 1.1×	224 1.5×	96 1.3×	22 1.0×	28	550
Nicola Pavarelli Ireland	13	343 0.9×	208 0.9×	72 0.5×	94 1.3×	11 0.5×	21	394
M. Ashkan Seyedi United States	11	386 1.0×	164 0.7×	192 1.3×	72 1.0×	27 1.2×	29	461
Nupur Bhargava United States	11	402 1.0×	212 0.9×	133 0.9×	58 0.8×	9 0.4×	19	424
Svenja Mauthe Switzerland	8	309 0.8×	195 0.8×	162 1.1×	86 1.2×	22 1.0×	22	364
Michael Canonico United States	10	477 1.2×	220 0.9×	189 1.3×	113 1.6×	7 0.3×	17	513
Kanji Yoh Japan	12	327 0.8×	390 1.6×	86 0.6×	118 1.6×	48 2.2×	76	486

Countries citing papers authored by Yves Mols

Since Specialization

Citations

This map shows the geographic impact of Yves Mols's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yves Mols with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yves Mols more than expected).

Fields of papers citing papers by Yves Mols

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yves Mols. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yves Mols. The network helps show where Yves Mols may publish in the future.

Co-authorship network of co-authors of Yves Mols

This figure shows the co-authorship network connecting the top 25 collaborators of Yves Mols. A scholar is included among the top collaborators of Yves Mols based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yves Mols. Yves Mols is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Pfister, Ulrich, Reynald Alcotte, Mieke De Maeyer, et al.. (2025). Single-Photon Source Monolithically Integrated on a 300 mm Silicon Wafer Using III–V Nano-ridge Engineering. ACS Photonics. 12(7). 3626–3634.

Kumar, Annie, Abhitosh Vais, G. Boccardi, et al.. (2024). An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications. VUBIR (Vrije Universiteit Brussel). 940–943.

Shi, Yuting, Yves Mols, Muhammad Muneeb, et al.. (2022). Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering. Optics Express. 30(8). 13510–13510. 16 indexed citations

Mols, Yves, Reynald Alcotte, Thomas Hantschel, et al.. (2020). Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si. Crystals. 10(4). 330–330. 26 indexed citations

Hsu, Po-Chun, Eddy Simoen, Clément Merckling, et al.. (2019). The impact of extended defects on the generation and recombination lifetime in n type In _.53 Ga _.47 As. Journal of Physics D Applied Physics. 52(48). 485102–485102. 2 indexed citations

Hantschel, Thomas, T. Vystavěl, Yves Mols, et al.. (2019). Application of electron channeling contrast imaging to 3D semiconductor structures through proper detector configurations. Ultramicroscopy. 210. 112928–112928. 5 indexed citations

Shi, Yuting, Yves Mols, Marianna Pantouvaki, et al.. (2019). Loss-Coupled DFB Nano-Ridge Laser Monolithically Grown on a Standard 300-mm Si Wafer. 1–1.

Horiguchi, Naoto, D. Mocuta, Nadine Collaert, et al.. (2019). Effective Contact Resistivity Reduction for Mo/Pd/n-In_0.53Ga_0.47 as Contact. IEEE Electron Device Letters. 40(11). 1800–1803. 3 indexed citations

Hsu, Po-Chun, Eddy Simoen, Clément Merckling, et al.. (2019). Observation of the Stacking Faults in In_0.53Ga_0.47As by Electron Channeling Contrast Imaging. physica status solidi (a). 216(17). 6 indexed citations

10.

Kunert, Bernardette, et al.. (2018). How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches. Semiconductor Science and Technology. 33(9). 93002–93002. 114 indexed citations

11.

Simoen, Eddy, Po-Chun Hsu, Yves Mols, et al.. (2018). Do we have to worry about extended defects in high-mobility materials?. 1–4. 2 indexed citations

12.

Liu, Ziyang, Clément Merckling, R. Rooyackers, et al.. (2017). Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy. Physical Review Materials. 1(7). 12 indexed citations

13.

Martino, João Antônio, Paula Ghedini Der Agopian, A. Alian, et al.. (2017). The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of In_{<italic>x</italic>}Ga_{1–<italic>x</italic>}As nTFETs. IEEE Transactions on Electron Devices. 64(9). 3595–3600. 3 indexed citations

14.

Alian, A., J. Franco, A. Vandooren, et al.. (2015). Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET. 31.7.1–31.7.4. 26 indexed citations

15.

Halder, Sandip, Yves Mols, Dieter Van den Heuvel, et al.. (2014). Progress on background signal analysis of bare wafer inspection systems based on light scattering for III/V epitaxial growth monitoring. 49. 283–287.

16.

Alian, A., et al.. (2013). Impact of the channel thickness on the performance of ultrathin InGaAs channel MOSFET devices. 16.6.1–16.6.4. 35 indexed citations

17.

Buffière, Marie, Guy Brammertz, Abdel‐Aziz El Mel, et al.. (2013). Recombination stability in polycrystalline Cu<inf>2</inf>ZnSnSe<inf>4</inf> thin films. 1941–1944. 14 indexed citations

18.

Zhao, Lu, et al.. (2010). Novel Mechanically Stacked Multi-Junction Solar Cells Applying Ultra-Thin III-V Cells and Wafer Based Germanium Cell. ECS Transactions. 27(1). 1123–1128. 10 indexed citations

19.

Flamand, Giovanni, et al.. (2009). Development of Mechanically Stacked Multi-Junction Solar Cells Applying Thin, One-side Contacted III-V Cells. EU PVSEC. 126–129. 5 indexed citations

20.

Brammertz, Guy, Yves Mols, Stefan Degroote, et al.. (2006). Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates. Journal of Applied Physics. 99(9). 51 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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