F. Milési

449 total citations
56 papers, 325 citations indexed

About

F. Milési is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, F. Milési has authored 56 papers receiving a total of 325 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in F. Milési's work include Silicon and Solar Cell Technologies (21 papers), Semiconductor materials and devices (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). F. Milési is often cited by papers focused on Silicon and Solar Cell Technologies (21 papers), Semiconductor materials and devices (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). F. Milési collaborates with scholars based in France, Spain and Canada. F. Milési's co-authors include Frank Torregrosa, Frédéric Y. Gardes, David J. Thomson, Graham T. Reed, J-M. Fédéli, C. Laviron, Jean‐Paul Barnes, Y. Veschetti, Thibaut Desrues and Damien Barakel and has published in prestigious journals such as Journal of Applied Physics, Optics Express and Thin Solid Films.

In The Last Decade

F. Milési

55 papers receiving 315 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Milési France 10 294 113 67 40 23 56 325
H. P. Vyas India 11 287 1.0× 140 1.2× 67 1.0× 45 1.1× 31 1.3× 48 354
Younghyun Kim South Korea 12 330 1.1× 96 0.8× 118 1.8× 47 1.2× 19 0.8× 58 383
Daniel Mauch United States 10 236 0.8× 94 0.8× 43 0.6× 21 0.5× 14 0.6× 30 316
Olivier Palais France 15 473 1.6× 182 1.6× 176 2.6× 89 2.2× 14 0.6× 69 558
D. Åberg Sweden 9 322 1.1× 82 0.7× 50 0.7× 26 0.7× 29 1.3× 28 345
G. Giroult-Matlakowski France 6 334 1.1× 108 1.0× 96 1.4× 36 0.9× 33 1.4× 12 354
Satyavolu S. Papa Rao United States 9 213 0.7× 152 1.3× 58 0.9× 122 3.0× 20 0.9× 30 301
D. Manger Germany 11 366 1.2× 61 0.5× 52 0.8× 36 0.9× 56 2.4× 21 401
Stephen LaLumondiere United States 10 282 1.0× 137 1.2× 78 1.2× 156 3.9× 7 0.3× 31 365
Christophe Maleville France 11 463 1.6× 78 0.7× 89 1.3× 102 2.5× 13 0.6× 53 503

Countries citing papers authored by F. Milési

Since Specialization
Citations

This map shows the geographic impact of F. Milési's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Milési with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Milési more than expected).

Fields of papers citing papers by F. Milési

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Milési. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Milési. The network helps show where F. Milési may publish in the future.

Co-authorship network of co-authors of F. Milési

This figure shows the co-authorship network connecting the top 25 collaborators of F. Milési. A scholar is included among the top collaborators of F. Milési based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Milési. F. Milési is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Widiez, J., Jérémie Chrétien, José Carlos Piñero Charlo, et al.. (2025). Smart Cut Transfer of Wide‐Bandgap Materials: The Case of Diamond. physica status solidi (a). 223(2). 1 indexed citations
2.
Acosta-Alba, Pablo, S. Reboh, Martin Rack, et al.. (2024). Local Interface RF Passivation Layer Based on Helium Ion-Implantation in High-Resistivity Silicon Substrates. SPIRE - Sciences Po Institutional REpository. 944–947. 1 indexed citations
3.
Navone, Christelle, L. Sanchez, B. Rousset, et al.. (2023). Large Diameter Epi-Ready InP on Si (InPOSi) Substrates. SPIRE - Sciences Po Institutional REpository. 1 indexed citations
4.
Ionica, I., et al.. (2021). A simple test structure for the electrical characterization of front and back channels for advanced SOI technology development. Solid-State Electronics. 185. 108047–108047. 1 indexed citations
5.
Desrues, Thibaut, et al.. (2019). Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing. Progress in Photovoltaics Research and Applications. 27(12). 1081–1091. 13 indexed citations
6.
Milési, F., et al.. (2018). Si and Mg Ion Implantation for Doping of GaN Grown on Silicon. 70–73. 3 indexed citations
7.
Charles, Matthew, et al.. (2017). Thermal Evolution of Implantation Damages in Mg-Implanted GaN Layers Grown on Si. ECS Transactions. 80(7). 131–138. 6 indexed citations
8.
Ottaviani, Laurent, Mihai Lazar, F. Milési, et al.. (2015). 4H-SiC P<sup>+</sup>N UV Photodiodes for Space Applications. Materials science forum. 821-823. 644–647. 2 indexed citations
9.
Chantre, A., B. Blampey, F. Milési, et al.. (2015). Power-efficient carrier-depletion SOI Mach-Zehnder modulators for 4x25Gbit/s operation in the O-band. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9367. 93670D–93670D. 5 indexed citations
10.
Ottaviani, Laurent, Olivier Palais, F. Milési, et al.. (2014). 4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation. MRS Proceedings. 1693. 2 indexed citations
11.
Ottaviani, Laurent, Mihai Lazar, Dominique Planson, et al.. (2011). 4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes. SPIRE - Sciences Po Institutional REpository. 1 indexed citations
12.
Rasigade, G., Mélissa Ziebell, Delphine Marris‐Morini, et al.. (2011). High extinction ratio 10 Gbit/s silicon optical modulator. Optics Express. 19(7). 5827–5827. 23 indexed citations
13.
Bouchut, Philippe, et al.. (2011). Thermoluminescence at a heating rate threshold in stressed fused silica. Optics Express. 19(27). 25854–25854. 2 indexed citations
14.
Prtljaga, N., Daniel Navarro‐Urrios, A. Marconi, et al.. (2011). Erbium implanted silicon rich oxide thin films suitable for slot waveguides applications. Optical Materials. 33(7). 1083–1085. 6 indexed citations
15.
Ziebell, Mélissa, G. Rasigade, Delphine Marris‐Morini, et al.. (2011). Large extinction ratio 10 Gbit/s silicon optical modulator based on a reverse biased PIPIN diode. Zenodo (CERN European Organization for Nuclear Research). 23. 1–2. 2 indexed citations
16.
Marconi, A., Aleksei Anopchenko, N. Prtljaga, et al.. (2011). 154&#x00B5;m Er doped light emitting devices: Role of silicon content. INFM-OAR (INFN Catania). 77–79. 1 indexed citations
17.
Torregrosa, Frank, et al.. (2011). Integration of a plasma doping PULSION&#x00AE; process into a fully depleted SOI transistor flow chart. 280. 67–70. 2 indexed citations
18.
Mollard, L., G. Destéfanis, G. Bourgeois, et al.. (2011). Status of p-on-n Arsenic-Implanted HgCdTe Technologies. Journal of Electronic Materials. 40(8). 1830–1839. 29 indexed citations
19.
Thomson, David J., Frédéric Y. Gardes, Graham T. Reed, F. Milési, & J-M. Fédéli. (2010). High speed silicon optical modulator with self aligned fabrication process. Optics Express. 18(18). 19064–19064. 40 indexed citations
20.
Torregrosa, Frank, Gilles Mathieu, Laurent Roux, et al.. (2008). PULSION®: A Versatile 200 to 300 mm Bridge Tool Plasma Immersion Ion Implanter for Ultra-Shallow Doping and Nanotechology Applications.. AIP conference proceedings. 484–487. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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